頁 3 - Cree/Wolfspeed 產品

零件編號	製造商	描述	封裝	庫存
C3M0065090J-TR	Cree/Wolfspeed	MOSFET N-CH 900V 35A D2PAK-7 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 2.1V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V Vgs (Max): +19V, -8V FET Feature: - Power Dissipation (Max): 113W (Tc) Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	封裝: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	庫存3,520
C3M0075120J	Cree/Wolfspeed	1200V, 75 MOHM, G3 SIC MOSFET FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V Vgs (Max): +19V, -8V FET Feature: - Power Dissipation (Max): 113.6W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 20A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	封裝: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	庫存2,576
CMF10120D	Cree/Wolfspeed	MOSFET N-CH 1200V 24A TO247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 47.1nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 928pF @ 800V Vgs (Max): +25V, -5V FET Feature: - Power Dissipation (Max): 134W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 10A, 20V Operating Temperature: -55°C ~ 135°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	封裝: TO-247-3	庫存5,296
C2M0025120D	Cree/Wolfspeed	MOSFET N-CH 1200V 90A TO-247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 161nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 463W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 50A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	封裝: TO-247-3	庫存17,262
C3M0065090D	Cree/Wolfspeed	MOSFET N-CH 900V 36A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 2.1V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V Vgs (Max): +18V, -8V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	封裝: TO-247-3	庫存30,360
C2M0280120D	Cree/Wolfspeed	MOSFET N-CH 1200V 10A TO-247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.8V @ 1.25mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 259pF @ 1000V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 370 mOhm @ 6A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	封裝: TO-247-3	庫存24,732
CGHV14800F	Cree/Wolfspeed	800-W 1200-1400-MHZ GAN HEMT Transistor Type: HEMT Frequency: 1.4GHz Gain: 14.5dB Voltage - Test: 50V Current Rating: 24A Noise Figure: - Current - Test: 800mA Power - Output: 900W Voltage - Rated: 125V Package / Case: 440117 Supplier Device Package: 440117	封裝: 440117	庫存5,008
CGHV40320D	Cree/Wolfspeed	RF MOSFET HEMT 50V DIE Transistor Type: HEMT Frequency: 4GHz Gain: 19dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 500mA Power - Output: 320W Voltage - Rated: 150V Package / Case: Die Supplier Device Package: Die	封裝: Die	庫存5,264
CGHV59350F	Cree/Wolfspeed	FET RF 125V 5.9GHZ 440217 Transistor Type: HEMT Frequency: 5.2GHz ~ 5.9GHz Gain: 11.2dB Voltage - Test: 50V Current Rating: 24A Noise Figure: - Current - Test: 1A Power - Output: 450W Voltage - Rated: 125V Package / Case: 440217 Supplier Device Package: 440217	封裝: 440217	庫存4,528
CGHV40100P	Cree/Wolfspeed	FET RF 125V 4GHZ 440206 Transistor Type: HEMT Frequency: 0 ~ 4GHz Gain: 11dB Voltage - Test: 50V Current Rating: 8.7A Noise Figure: - Current - Test: 600mA Power - Output: 116W Voltage - Rated: 125V Package / Case: 440206 Supplier Device Package: 440206	封裝: 440206	庫存6,948
CGHV1J025D-GP4	Cree/Wolfspeed	RF MOSFET HEMT 40V DIE Transistor Type: HEMT Frequency: 18GHz Gain: 17dB Voltage - Test: 40V Current Rating: - Noise Figure: - Current - Test: 120mA Power - Output: 25W Voltage - Rated: 100V Package / Case: Die Supplier Device Package: Die	封裝: Die	庫存6,216
CCS020M12CM2	Cree/Wolfspeed	MOSFET 6N-CH 1200V 29.5A MODULE FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 29.5A Rds On (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 2.2V @ 1mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 61.5nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 800V Power - Max: 167W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封裝: Module	庫存2,096
C3D12065A	Cree/Wolfspeed	DIODE SCHOTTKY 650V 35A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 35A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 12A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 74µA @ 650V Capacitance @ Vr, F: 641.5pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-220-2	庫存5,712
C3D04060A	Cree/Wolfspeed	DIODE SCHOTTKY 600V 4A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 251pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-220-2	庫存36,240
C3D08065I	Cree/Wolfspeed	DIODE SCHOTTKY 650V 8A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 60µA @ 650V Capacitance @ Vr, F: 441pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Isolated Tab Supplier Device Package: TO-220-2 Isolated Tab Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-220-2 Isolated Tab	庫存7,968
C3D04060F	Cree/Wolfspeed	DIODE SCHOTTKY 600V 4A TO220-F2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 251pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220-F2 Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-220-2 Full Pack, Isolated Tab	庫存28,830
C4D10120A	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 10A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 250µA @ 1200V Capacitance @ Vr, F: 754pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-220-2	庫存17,028
C3D10060A	Cree/Wolfspeed	DIODE SCHOTTKY 600V 10A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 480pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-220-2	庫存13,086
C4D20120D	Cree/Wolfspeed	DIODE ARRAY SCHOTTKY 1200V TO247 Diode Configuration: 1 Pair Common Cathode Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 16A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 1200V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	封裝: TO-247-3	庫存7,824
C3D16065D	Cree/Wolfspeed	DIODE ARRAY SCHOTTKY 650V TO247 Diode Configuration: 1 Pair Common Cathode Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io) (per Diode): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 60µA @ 650V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	封裝: TO-247-3	庫存13,716
C3D16060D	Cree/Wolfspeed	DIODE ARRAY SCHOTTKY 600V TO247 Diode Configuration: 1 Pair Common Cathode Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	封裝: TO-247-3	庫存15,456
CGHV40200PP-TB	Cree/Wolfspeed	DEV KIT Type: - Frequency: - For Use With/Related Products: - Supplied Contents: -	封裝: -	庫存8,478
CGHV1F006S-AMP3	Cree/Wolfspeed	DEMO HEMT TRANS AMP3 CGHV1F006S Type: HEMT Frequency: 0Hz ~ 18GHz For Use With/Related Products: CGHV1F006 Supplied Contents: Partially Populated Board - Main IC Not Included	封裝: -	庫存4,842
CGHV1F025S-AMP1	Cree/Wolfspeed	DEMO HEMT TRANS AMP1 CGHV1F025S Type: HEMT Frequency: 0Hz ~ 15GHz For Use With/Related Products: CGHV1F025 Supplied Contents: Partially Populated Board - Main IC Not Included	封裝: -	庫存7,452
CGHV40050F-TB	Cree/Wolfspeed	TEST BOARD FOR CGHV40050F Type: Transistor Frequency: 0Hz ~ 4GHz For Use With/Related Products: CGHV40050 Supplied Contents: Partially Populated Board - Main IC Not Included	封裝: -	庫存7,308
CGHV22200-TB	Cree/Wolfspeed	EVAL BOARD FOR CGHV22200 Type: HEMT Frequency: 1.8GHz ~ 2.2GHz For Use With/Related Products: CGHV22200 Supplied Contents: Partially Populated Board - Main IC Not Included	封裝: -	庫存4,608
CGH40006P-TB	Cree/Wolfspeed	BOARD DEMO AMP CIRCUIT CGH40006P Type: HEMT Frequency: 500MHz ~ 6GHz For Use With/Related Products: CGH40006P Supplied Contents: Partially Populated Board - Main IC Not Included	封裝: -	庫存5,148
CGHV40100F-TB	Cree/Wolfspeed	TEST FIXTURE FOR CGHV40100F Type: FET Frequency: 500MHz ~ 2.5GHz For Use With/Related Products: CGHV40100 Supplied Contents: Partially Populated Board - Main IC Not Included	封裝: -	庫存4,158
CMPA0060025F-TB	Cree/Wolfspeed	BOARD DEMO AMP CKT CMPA0060025F Type: Amplifier Frequency: 20MHz ~ 6GHz For Use With/Related Products: CMPA0060025F Supplied Contents: Partially Populated Board - Main IC Not Included	封裝: -	庫存3,618
CMPA1D1E025F	Cree/Wolfspeed	IC AMP GAN HEMT MMIC 440208 Frequency: 13.75GHz ~ 14.5GHz P1dB: - Gain: 24dB Noise Figure: - RF Type: - Voltage - Supply: 40V Current - Supply: - Test Frequency: - Package / Case: 440208 Supplier Device Package: 440208	封裝: 440208	庫存8,028

C3M0065090J-TR

Cree/Wolfspeed

MOSFET N-CH 900V 35A D2PAK-7

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 2.1V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
Vgs (Max): +19V, -8V
FET Feature: -
Power Dissipation (Max): 113W (Tc)
Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

封裝: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

庫存3,520

C3M0075120J

Cree/Wolfspeed

1200V, 75 MOHM, G3 SIC MOSFET

FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V
Vgs (Max): +19V, -8V
FET Feature: -
Power Dissipation (Max): 113.6W (Tc)
Rds On (Max) @ Id, Vgs: 90 mOhm @ 20A, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

封裝: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

庫存2,576

CMF10120D

Cree/Wolfspeed

MOSFET N-CH 1200V 24A TO247

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 47.1nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 928pF @ 800V
Vgs (Max): +25V, -5V
FET Feature: -
Power Dissipation (Max): 134W (Tc)
Rds On (Max) @ Id, Vgs: 220 mOhm @ 10A, 20V
Operating Temperature: -55°C ~ 135°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

封裝: TO-247-3

庫存5,296

C2M0025120D

Cree/Wolfspeed

MOSFET N-CH 1200V 90A TO-247

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 161nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 463W (Tc)
Rds On (Max) @ Id, Vgs: 34 mOhm @ 50A, 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

封裝: TO-247-3

庫存17,262

C3M0065090D

Cree/Wolfspeed

MOSFET N-CH 900V 36A TO247-3

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 2.1V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
Vgs (Max): +18V, -8V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

封裝: TO-247-3

庫存30,360

C2M0280120D

Cree/Wolfspeed

MOSFET N-CH 1200V 10A TO-247-3

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 2.8V @ 1.25mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 259pF @ 1000V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 370 mOhm @ 6A, 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

封裝: TO-247-3

庫存24,732

CGHV14800F

Cree/Wolfspeed

800-W 1200-1400-MHZ GAN HEMT

Transistor Type: HEMT
Frequency: 1.4GHz
Gain: 14.5dB
Voltage - Test: 50V
Current Rating: 24A
Noise Figure: -
Current - Test: 800mA
Power - Output: 900W
Voltage - Rated: 125V
Package / Case: 440117
Supplier Device Package: 440117

封裝: 440117

庫存5,008

CGHV40320D

Cree/Wolfspeed

RF MOSFET HEMT 50V DIE

Transistor Type: HEMT
Frequency: 4GHz
Gain: 19dB
Voltage - Test: 50V
Current Rating: -
Noise Figure: -
Current - Test: 500mA
Power - Output: 320W
Voltage - Rated: 150V
Package / Case: Die
Supplier Device Package: Die

封裝: Die

庫存5,264

CGHV59350F

Cree/Wolfspeed

FET RF 125V 5.9GHZ 440217

Transistor Type: HEMT
Frequency: 5.2GHz ~ 5.9GHz
Gain: 11.2dB
Voltage - Test: 50V
Current Rating: 24A
Noise Figure: -
Current - Test: 1A
Power - Output: 450W
Voltage - Rated: 125V
Package / Case: 440217
Supplier Device Package: 440217

封裝: 440217

庫存4,528

CGHV40100P

Cree/Wolfspeed

FET RF 125V 4GHZ 440206

Transistor Type: HEMT
Frequency: 0 ~ 4GHz
Gain: 11dB
Voltage - Test: 50V
Current Rating: 8.7A
Noise Figure: -
Current - Test: 600mA
Power - Output: 116W
Voltage - Rated: 125V
Package / Case: 440206
Supplier Device Package: 440206

封裝: 440206

庫存6,948

CGHV1J025D-GP4

Cree/Wolfspeed

RF MOSFET HEMT 40V DIE

Transistor Type: HEMT
Frequency: 18GHz
Gain: 17dB
Voltage - Test: 40V
Current Rating: -
Noise Figure: -
Current - Test: 120mA
Power - Output: 25W
Voltage - Rated: 100V
Package / Case: Die
Supplier Device Package: Die

封裝: Die

庫存6,216

CCS020M12CM2

Cree/Wolfspeed

MOSFET 6N-CH 1200V 29.5A MODULE

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 29.5A
Rds On (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 2.2V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 61.5nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 800V
Power - Max: 167W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封裝: Module

庫存2,096

C3D12065A

Cree/Wolfspeed

DIODE SCHOTTKY 650V 35A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 35A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 12A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 74µA @ 650V
Capacitance @ Vr, F: 641.5pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-220-2

庫存5,712

C3D04060A

Cree/Wolfspeed

DIODE SCHOTTKY 600V 4A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-220-2

庫存36,240

C3D08065I

Cree/Wolfspeed

DIODE SCHOTTKY 650V 8A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 60µA @ 650V
Capacitance @ Vr, F: 441pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Isolated Tab
Supplier Device Package: TO-220-2 Isolated Tab
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-220-2 Isolated Tab

庫存7,968

C3D04060F

Cree/Wolfspeed

DIODE SCHOTTKY 600V 4A TO220-F2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: TO-220-F2
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-220-2 Full Pack, Isolated Tab

庫存28,830

C4D10120A

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 10A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Capacitance @ Vr, F: 754pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-220-2

庫存17,028

C3D10060A

Cree/Wolfspeed

DIODE SCHOTTKY 600V 10A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-220-2

庫存13,086

C4D20120D

Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 1200V TO247

Diode Configuration: 1 Pair Common Cathode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 16A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

封裝: TO-247-3

庫存7,824

C3D16065D

Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 650V TO247

Diode Configuration: 1 Pair Common Cathode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io) (per Diode): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 60µA @ 650V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

封裝: TO-247-3

庫存13,716

C3D16060D

Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 600V TO247

Diode Configuration: 1 Pair Common Cathode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

封裝: TO-247-3

庫存15,456

CGHV40200PP-TB

Cree/Wolfspeed

DEV KIT

Type: -
Frequency: -
For Use With/Related Products: -
Supplied Contents: -

封裝: -

庫存8,478

CGHV1F006S-AMP3

Cree/Wolfspeed

DEMO HEMT TRANS AMP3 CGHV1F006S

Type: HEMT
Frequency: 0Hz ~ 18GHz
For Use With/Related Products: CGHV1F006
Supplied Contents: Partially Populated Board - Main IC Not Included

封裝: -

庫存4,842

CGHV1F025S-AMP1

Cree/Wolfspeed

DEMO HEMT TRANS AMP1 CGHV1F025S

Type: HEMT
Frequency: 0Hz ~ 15GHz
For Use With/Related Products: CGHV1F025
Supplied Contents: Partially Populated Board - Main IC Not Included

封裝: -

庫存7,452

CGHV40050F-TB

Cree/Wolfspeed

TEST BOARD FOR CGHV40050F

Type: Transistor
Frequency: 0Hz ~ 4GHz
For Use With/Related Products: CGHV40050
Supplied Contents: Partially Populated Board - Main IC Not Included

封裝: -

庫存7,308

CGHV22200-TB

Cree/Wolfspeed

EVAL BOARD FOR CGHV22200

Type: HEMT
Frequency: 1.8GHz ~ 2.2GHz
For Use With/Related Products: CGHV22200
Supplied Contents: Partially Populated Board - Main IC Not Included

封裝: -

庫存4,608

CGH40006P-TB

Cree/Wolfspeed

BOARD DEMO AMP CIRCUIT CGH40006P

Type: HEMT
Frequency: 500MHz ~ 6GHz
For Use With/Related Products: CGH40006P
Supplied Contents: Partially Populated Board - Main IC Not Included

封裝: -

庫存5,148

CGHV40100F-TB

Cree/Wolfspeed

TEST FIXTURE FOR CGHV40100F

Type: FET
Frequency: 500MHz ~ 2.5GHz
For Use With/Related Products: CGHV40100
Supplied Contents: Partially Populated Board - Main IC Not Included

封裝: -

庫存4,158

CMPA0060025F-TB

Cree/Wolfspeed

BOARD DEMO AMP CKT CMPA0060025F

Type: Amplifier
Frequency: 20MHz ~ 6GHz
For Use With/Related Products: CMPA0060025F
Supplied Contents: Partially Populated Board - Main IC Not Included

封裝: -

庫存3,618

CMPA1D1E025F

Cree/Wolfspeed

IC AMP GAN HEMT MMIC 440208

Frequency: 13.75GHz ~ 14.5GHz
P1dB: -
Gain: 24dB
Noise Figure: -
RF Type: -
Voltage - Supply: 40V
Current - Supply: -
Test Frequency: -
Package / Case: 440208
Supplier Device Package: 440208

封裝: 440208

庫存8,028