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二極體 - 整流器 - 單

記錄 30,120
頁  872/1,004
圖片
零件編號
製造商
描述
封裝
庫存
數量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
CR3F-020 TR
Central Semiconductor Corp

DIODE GEN PURP 200V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 65pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 125°C
封裝: DO-201AD, Axial
庫存3,312
200V
3A
1.2V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
65pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
GP10B-4002-M3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: DO-204AL, DO-41, Axial
庫存4,304
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
3µs
5µA @ 100V
8pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
MUR160-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: DO-204AC, DO-15, Axial
庫存2,896
600V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
-
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-65°C ~ 175°C
DSF10TC-BT
ON Semiconductor

DIODE GEN PURP 200V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: 150°C (Max)
封裝: DO-204AL, DO-41, Axial
庫存2,256
200V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 200V
-
Through Hole
DO-204AL, DO-41, Axial
-
150°C (Max)
hot MBR1650
Fairchild/ON Semiconductor

DIODE SCHOTTKY 50V 16A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: TO-220-2
庫存17,412
50V
16A
750mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 50V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
MBR745/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 7.5A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 7.5A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: TO-220-2
庫存3,072
45V
7.5A
840mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 45V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
D1030N22T
Infineon Technologies Industrial Power and Controls Americas

RECTIFIER DIODE 2200V 2040A

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封裝: -
庫存7,968
-
-
-
-
-
-
-
-
-
-
-
JAN1N3612
Microsemi Corporation

DIODE GEN PURP 400V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: A, Axial
庫存5,088
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
100µA @ 300V
-
Through Hole
A, Axial
-
-65°C ~ 175°C
1N486BUR
Microsemi Corporation

DIODE RECT STD RECOVERY

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封裝: -
庫存2,928
-
-
-
-
-
-
-
-
-
-
-
VI20150SG-E3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 150V 20A TO262AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262AA
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA
庫存4,096
150V
20A
1.6V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 150V
-
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262AA
-55°C ~ 150°C
VBT1080S-M3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 10A 80V TO-263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 810mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 600µA @ 80V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存7,136
80V
10A
810mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
600µA @ 80V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C
SFS1601G MNG
TSC America Inc.

DIODE, SUPER FAST, 16A, 50V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存4,320
50V
16A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
80pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-55°C ~ 150°C
hot VS-6EWX06FNTR-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 6A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 3.1V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 19ns
  • Current - Reverse Leakage @ Vr: 20µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存18,000
600V
6A
3.1V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
19ns
20µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-65°C ~ 175°C
SS36-E3/9AT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 3A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-214AB, SMC
庫存3,376
60V
3A
750mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
EGL34BHE3/98
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 500MA DO213

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA (Glass)
  • Supplier Device Package: DO-213AA (GL34)
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: DO-213AA (Glass)
庫存2,864
100V
500mA
1.25V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
7pF @ 4V, 1MHz
Surface Mount
DO-213AA (Glass)
DO-213AA (GL34)
-65°C ~ 175°C
CD214B-B240LF
Bourns Inc.

DIODE SCHOTTKY 40V 2A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 125°C
封裝: DO-214AA, SMB
庫存3,552
40V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
200pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 125°C
RGL41DHE3/97
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO213AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: DO-213AB, MELF (Glass)
庫存7,040
200V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
15pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
AM01ZWS
Sanken

DIODE GEN PURP 200V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: Axial
庫存4,464
200V
1A
980mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 200V
-
Through Hole
Axial
-
-40°C ~ 150°C
GP10-4002E-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -
封裝: DO-204AL, DO-41, Axial
庫存3,408
100V
1A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-
ESH2BA R3G
TSC America Inc.

DIODE, ULTRA FAST, 1A, 100V, 25N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: DO-214AC, SMA
庫存5,712
100V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 200V
25pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 175°C
SK12-TP (SMB5817)
Micro Commercial Co

DIODE SCHOTTKY 20V 1A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 20V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA, HSMB
  • Operating Temperature - Junction: -55°C ~ 125°C
封裝: DO-214AA, SMB
庫存5,856
20V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
110pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA, HSMB
-55°C ~ 125°C
RS1PB-M3/85A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO220AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 1µA @ 100V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-220AA
庫存7,456
100V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 100V
9pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 150°C
LS101B-GS18
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 30MA SOD80

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 30mA
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200nA @ 40V
  • Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-80 Variant
  • Supplier Device Package: SOD-80 QuadroMELF
  • Operating Temperature - Junction: 125°C (Max)
封裝: SOD-80 Variant
庫存3,360
50V
30mA
950mV @ 15mA
Small Signal =< 200mA (Io), Any Speed
-
200nA @ 40V
2.1pF @ 0V, 1MHz
Surface Mount
SOD-80 Variant
SOD-80 QuadroMELF
125°C (Max)
VS-150KR20A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 150A DO205AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.33V @ 471A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 35mA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -40°C ~ 200°C
封裝: DO-205AA, DO-8, Stud
庫存4,080
200V
150A
1.33V @ 471A
Standard Recovery >500ns, > 200mA (Io)
-
35mA @ 200V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-40°C ~ 200°C
GP2D008A120A
Global Power Technologies Group

SCHOTTKY DIODE 1200V 8A TO-220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 24A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 20µA @ 1200V
  • Capacitance @ Vr, F: 508pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -50°C ~ 175°C
封裝: TO-220-2
庫存6,192
1200V
24A (DC)
1.8V @ 8A
No Recovery Time > 500mA (Io)
0ns
20µA @ 1200V
508pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2
-50°C ~ 175°C
CSHD3-60 TR13
Central Semiconductor Corp

DIODE SCHOTTKY 60V 3A DPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存4,768
60V
3A
750mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
30µA @ 60V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-65°C ~ 150°C
hot RS2AA-13-F
Diodes Incorporated

DIODE GEN PURP 50V 1.5A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: DO-214AC, SMA
庫存243,840
50V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
30pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 150°C
hot VS-60APU04PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 60A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 85ns
  • Current - Reverse Leakage @ Vr: 50µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: TO-247-3
庫存5,744
400V
60A
1.25V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
85ns
50µA @ 400V
-
Through Hole
TO-247-3
TO-247AC
-55°C ~ 175°C
CMSD4448 TR
Central Semiconductor Corp

DIODE SWITCHING 75V 250MA SOT323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 250mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 25nA @ 20V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: SC-70, SOT-323
庫存28,512
75V
250mA (DC)
1V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
25nA @ 20V
4pF @ 0V, 1MHz
Surface Mount
SC-70, SOT-323
SOT-323
-65°C ~ 150°C
hot B130LB-13-F
Diodes Incorporated

DIODE SCHOTTKY 30V 2A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 445mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 30V
  • Capacitance @ Vr, F: 90pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -55°C ~ 125°C
封裝: DO-214AA, SMB
庫存985,908
30V
2A
445mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
90pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-55°C ~ 125°C