頁 17 - 電晶體 - FET、MOSFET - 單 | 離散半導體產品 | 黑森爾電子
聯繫我們
SalesDept@heisener.com +86-755-83210559 ext. 813
登入/註冊
Language Translation

* Please refer to the English Version as our Official Version.

BOM
購物車 0

電晶體 - FET、MOSFET - 單

記錄 26,766
頁  17/893
圖片
零件編號
製造商
描述
封裝
庫存
數量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot AUIRFR8401
Infineon Technologies

MOSFET N-CH 40V 100A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.25 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存5,216
MOSFET (Metal Oxide)
40V
100A (Tc)
10V
3.9V @ 50µA
63nC @ 10V
2200pF @ 25V
±20V
-
79W (Tc)
4.25 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
AUIRLS4030
Infineon Technologies

MOSFET N-CH 100V 180A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 11360pF @ 50V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 370W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 110A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存3,584
MOSFET (Metal Oxide)
100V
180A (Tc)
4.5V, 10V
2.5V @ 250µA
130nC @ 4.5V
11360pF @ 50V
±16V
-
370W (Tc)
4.3 mOhm @ 110A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IPB25N06S3L-22
Infineon Technologies

MOSFET N-CH 55V 25A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 21.3 mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存103,464
MOSFET (Metal Oxide)
55V
25A (Tc)
5V, 10V
2.2V @ 20µA
47nC @ 10V
2260pF @ 25V
±16V
-
50W (Tc)
21.3 mOhm @ 17A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRF7811ATRPBF
Infineon Technologies

MOSFET N-CH 28V 11A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 28V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存30,948
MOSFET (Metal Oxide)
28V
11A (Ta)
4.5V
3V @ 250µA
26nC @ 4.5V
1760pF @ 15V
±12V
-
2.5W (Ta)
10 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot SPP15P10P
Infineon Technologies

MOSFET P-CH 100V 15A TO-220AB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1.54mA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 128W (Tc)
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 10.6A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存396,048
MOSFET (Metal Oxide)
100V
15A (Tc)
10V
2.1V @ 1.54mA
50nC @ 10V
1180pF @ 25V
±20V
-
128W (Tc)
240 mOhm @ 10.6A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
IRL3103D2
Infineon Technologies

MOSFET N-CH 30V 54A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 32A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存6,816
MOSFET (Metal Oxide)
30V
54A (Tc)
4.5V, 10V
1V @ 250µA
44nC @ 4.5V
2300pF @ 25V
±16V
-
2W (Ta), 70W (Tc)
14 mOhm @ 32A, 10V
-
Through Hole
TO-220AB
TO-220-3
GP1M003A040CG
Global Power Technologies Group

MOSFET N-CH 400V 2A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存6,032
MOSFET (Metal Oxide)
400V
2A (Tc)
10V
4V @ 250µA
3.7nC @ 10V
210pF @ 25V
±30V
-
30W (Tc)
3.4 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SI7860DP-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 11A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
封裝: PowerPAK? SO-8
庫存340,728
MOSFET (Metal Oxide)
30V
11A (Ta)
4.5V, 10V
3V @ 250µA
18nC @ 4.5V
-
±20V
-
1.8W (Ta)
8 mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
SIHF8N50L-E3
Vishay Siliconix

MOSFET N-CH 500V 8A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 0V
  • Input Capacitance (Ciss) (Max) @ Vds: 873pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Full Pack
  • Package / Case: TO-220-3 Full Pack
封裝: TO-220-3 Full Pack
庫存4,080
MOSFET (Metal Oxide)
500V
8A (Tc)
10V
5V @ 250µA
34nC @ 0V
873pF @ 25V
±30V
-
40W (Tc)
1 Ohm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 Full Pack
TO-220-3 Full Pack
hot FQPF9N50CT
Fairchild/ON Semiconductor

MOSFET N-CH 500V 9A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 44W (Tc)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
封裝: TO-220-3 Full Pack
庫存13,272
MOSFET (Metal Oxide)
500V
9A (Tc)
10V
4V @ 250µA
35nC @ 10V
1030pF @ 25V
±30V
-
44W (Tc)
800 mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot FQU3N40TU
Fairchild/ON Semiconductor

MOSFET N-CH 400V 2A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封裝: TO-251-3 Short Leads, IPak, TO-251AA
庫存60,480
MOSFET (Metal Oxide)
400V
2A (Tc)
10V
5V @ 250µA
7.5nC @ 10V
230pF @ 25V
±30V
-
2.5W (Ta), 30W (Tc)
3.4 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
IRFS11N50ATRL
Vishay Siliconix

MOSFET N-CH 500V 11A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1423pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 520 mOhm @ 6.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存2,912
MOSFET (Metal Oxide)
500V
11A (Tc)
10V
4V @ 250µA
52nC @ 10V
1423pF @ 25V
±30V
-
170W (Tc)
520 mOhm @ 6.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot PMV20XN,215
NXP

MOSFET N-CH 30V 4.8A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 510mW (Ta)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 4.8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB (SOT23)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存138,720
MOSFET (Metal Oxide)
30V
4.8A (Ta)
2.5V, 4.5V
1.5V @ 250µA
10nC @ 4.5V
585pF @ 15V
±12V
-
510mW (Ta)
25 mOhm @ 4.8A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB (SOT23)
TO-236-3, SC-59, SOT-23-3
IPP80N04S404AKSA1
Infineon Technologies

MOSFET N-CH 40V 80A TO220-3-1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存6,000
MOSFET (Metal Oxide)
40V
80A (Tc)
10V
4V @ 35µA
43nC @ 10V
3440pF @ 25V
±20V
-
71W (Tc)
4.6 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IXTH2N170D2
IXYS

MOSFET N-CH 1700V 2A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1700V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3650pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 568W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 1A, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
封裝: TO-247-3
庫存4,368
MOSFET (Metal Oxide)
1700V
2A (Tj)
0V
-
110nC @ 5V
3650pF @ 10V
±20V
Depletion Mode
568W (Tc)
6.5 Ohm @ 1A, 0V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
hot IXTP06N120P
IXYS

MOSFET N-CH 1200V 600MA TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 32 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存30,000
MOSFET (Metal Oxide)
1200V
600mA (Tc)
10V
4.5V @ 50µA
13.3nC @ 10V
270pF @ 25V
±20V
-
42W (Tc)
32 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
AOW292
Alpha & Omega Semiconductor Inc.

MOSFET NCH 100V 105A TO262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 105A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6775pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.9W (Ta), 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA
庫存6,016
MOSFET (Metal Oxide)
100V
14.5A (Ta), 105A (Tc)
10V
3.4V @ 250µA
126nC @ 10V
6775pF @ 50V
±20V
-
1.9W (Ta), 300W (Tc)
4.1 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
hot SSM6J505NU,LF
Toshiba Semiconductor and Storage

MOSFET P CH 12V 12A UDFN6B

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 37.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 10V
  • Vgs (Max): ±6V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 4A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFNB (2x2)
  • Package / Case: 6-WDFN Exposed Pad
封裝: 6-WDFN Exposed Pad
庫存45,756
MOSFET (Metal Oxide)
12V
12A (Ta)
1.2V, 4.5V
1V @ 1mA
37.6nC @ 4.5V
2700pF @ 10V
±6V
-
1.25W (Ta)
12 mOhm @ 4A, 4.5V
150°C (TJ)
Surface Mount
6-UDFNB (2x2)
6-WDFN Exposed Pad
hot R5007ANX
Rohm Semiconductor

MOSFET N-CH 500V 7A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
封裝: TO-220-2 Full Pack
庫存138,384
MOSFET (Metal Oxide)
500V
7A (Ta)
10V
4.5V @ 1mA
13nC @ 10V
500pF @ 25V
±30V
-
40W (Tc)
1.05 Ohm @ 3.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
BSP92PH6327XTSA1
Infineon Technologies

MOSFET P-CH 250V 260MA 4SOT223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 104pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 260mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
封裝: TO-261-4, TO-261AA
庫存19,356
MOSFET (Metal Oxide)
250V
260mA (Ta)
2.8V, 10V
2V @ 130µA
5.4nC @ 10V
104pF @ 25V
±20V
-
1.8W (Ta)
12 Ohm @ 260mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
FDBL0260N100
Fairchild/ON Semiconductor

MOSFET N-CH 100V 200A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9265pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PSOF
  • Package / Case: 8-PowerSFN
封裝: 8-PowerSFN
庫存3,392
MOSFET (Metal Oxide)
100V
200A (Tc)
10V
4V @ 250µA
116nC @ 10V
9265pF @ 50V
±20V
-
3.5W (Ta), 250W (Tc)
2.6 mOhm @ 80A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-PSOF
8-PowerSFN
AUIRFS8405
Infineon Technologies

MOSFET N-CH 40V 120A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5193pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 163W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存25,428
MOSFET (Metal Oxide)
40V
120A (Tc)
10V
3.9V @ 100µA
161nC @ 10V
5193pF @ 25V
±20V
-
163W (Tc)
2.3 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot FDMS7578
Fairchild/ON Semiconductor

MOSFET N-CH 25V 17A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1625pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power56
  • Package / Case: 8-PowerTDFN
封裝: 8-PowerTDFN
庫存14,868
MOSFET (Metal Oxide)
25V
17A (Ta), 28A (Tc)
4.5V, 10V
3V @ 250µA
25nC @ 10V
1625pF @ 13V
±20V
-
2.5W (Ta), 33W (Tc)
5.8 mOhm @ 17A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Power56
8-PowerTDFN
FDD86380_F085
Fairchild/ON Semiconductor

MOSFET N-CH 80V 50A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tj)
  • Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存7,008
MOSFET (Metal Oxide)
80V
50A (Tc)
10V
4V @ 250µA
30nC @ 10V
1440pF @ 40V
±20V
-
75W (Tj)
13.5 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-PAK (TO-252AA)
TO-252-3, DPak (2 Leads + Tab), SC-63
SIB406EDK-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 6A SC-75-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.95W (Ta), 10W (Tc)
  • Rds On (Max) @ Id, Vgs: 46 mOhm @ 3.9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SC-75-6L Single
  • Package / Case: PowerPAK? SC-75-6L
封裝: PowerPAK? SC-75-6L
庫存2,352
MOSFET (Metal Oxide)
20V
6A (Tc)
2.5V, 4.5V
1.4V @ 250µA
12nC @ 10V
350pF @ 10V
±12V
-
1.95W (Ta), 10W (Tc)
46 mOhm @ 3.9A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-75-6L Single
PowerPAK? SC-75-6L
hot DMS2120LFWB-7
Diodes Incorporated

MOSFET P-CH 20V 2.9A 8DFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 2.8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN3020B (3x2)
  • Package / Case: 8-VDFN Exposed Pad
封裝: 8-VDFN Exposed Pad
庫存751,728
MOSFET (Metal Oxide)
20V
2.9A (Ta)
1.8V, 4.5V
1.3V @ 250µA
-
632pF @ 10V
±12V
Schottky Diode (Isolated)
1.5W (Ta)
95 mOhm @ 2.8A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN3020B (3x2)
8-VDFN Exposed Pad
TK39A60W,S4VX
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 39A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 19.4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
封裝: TO-220-3 Full Pack, Isolated Tab
庫存7,296
MOSFET (Metal Oxide)
600V
38.8A (Ta)
10V
3.7V @ 1.9mA
110nC @ 10V
4100pF @ 300V
±30V
-
50W (Tc)
65 mOhm @ 19.4A, 10V
150°C (TJ)
Through Hole
TO-220SIS
TO-220-3 Full Pack, Isolated Tab
IRFP7430PBF
Infineon Technologies

MOSFET N CH 40V 195A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 460nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14240pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 366W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
封裝: TO-247-3
庫存8,796
MOSFET (Metal Oxide)
40V
195A (Tc)
6V, 10V
3.9V @ 250µA
460nC @ 10V
14240pF @ 25V
±20V
-
366W (Tc)
1.3 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
IPD90P03P404ATMA1
Infineon Technologies

MOSFET P-CH 30V 90A TO252-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 253µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 137W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存615,552
MOSFET (Metal Oxide)
30V
90A (Tc)
10V
4V @ 253µA
130nC @ 10V
10300pF @ 25V
±20V
-
137W (Tc)
4.5 mOhm @ 90A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot RJU002N06T106
Rohm Semiconductor

MOSFET N-CH 60V 200MA SOT-323

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 200mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UMT3
  • Package / Case: SC-70, SOT-323
封裝: SC-70, SOT-323
庫存1,575,444
MOSFET (Metal Oxide)
60V
200mA (Ta)
2.5V, 4.5V
1.5V @ 1mA
-
18pF @ 10V
±12V
-
200mW (Ta)
2.3 Ohm @ 200mA, 4.5V
150°C (TJ)
Surface Mount
UMT3
SC-70, SOT-323