圖片 |
零件編號 |
製造商 |
描述 |
封裝 |
庫存 |
數量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 100V 100A TO220-3
|
封裝: TO-220-3 |
庫存7,792 |
|
MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 3.5V @ 275µA | 206nC @ 10V | 14800pF @ 50V | ±20V | - | 300W (Tc) | 3 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
IXYS |
MOSFET N-CH PLUS247
|
封裝: - |
庫存4,960 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Renesas Electronics America |
MOSFET N-CH 40V 100A TO-263
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存4,160 |
|
MOSFET (Metal Oxide) | 40V | 100A (Ta) | 10V | - | 100nC @ 10V | 5550pF @ 25V | ±20V | - | 1.5W (Ta), 119W (Tc) | 3.3 mOhm @ 50A, 10V | 150°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 8.3A PS-8
|
封裝: 8-SMD, Flat Lead |
庫存2,720 |
|
MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 26nC @ 10V | 1270pF @ 10V | ±20V | - | 840mW (Ta) | 8.5 mOhm @ 4.2A, 10V | 150°C (TJ) | Surface Mount | PS-8 (2.9x2.4) | 8-SMD, Flat Lead |
||
NXP |
MOSFET N-CH 100V D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存6,656 |
|
MOSFET (Metal Oxide) | 100V | 47A (Tc) | 10V | 4V @ 1mA | - | 3100pF @ 25V | ±20V | - | 166W (Tc) | 28 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 4000V .3A PLUS 220
|
封裝: PLUS-220SMD |
庫存2,992 |
|
MOSFET (Metal Oxide) | 4000V | 300mA (Tc) | 10V | 4V @ 250µA | 16.3nC @ 10V | 435pF @ 25V | ±20V | - | 130W (Tc) | 290 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PLUS-220SMD | PLUS-220SMD |
||
IXYS |
MOSFET N-CH 100V 80A ISOPLUS220
|
封裝: ISOPLUS220? |
庫存7,184 |
|
MOSFET (Metal Oxide) | 100V | 80A (Tc) | 10V | 4V @ 4mA | 180nC @ 10V | 4800pF @ 25V | ±20V | - | 230W (Tc) | 12.5 mOhm @ 40A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 200V 7.3A TO-220F
|
封裝: TO-220-3 Full Pack |
庫存6,512 |
|
MOSFET (Metal Oxide) | 200V | 7.3A (Tc) | 10V | 5V @ 250µA | 40nC @ 10V | 1200pF @ 25V | ±30V | - | 50W (Tc) | 470 mOhm @ 3.65A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
ON Semiconductor |
MOSFET N-CH 60V 0.115A SOT-23
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存6,912 |
|
MOSFET (Metal Oxide) | 60V | 115mA (Tc) | 5V, 10V | 2.5V @ 250µA | - | 50pF @ 25V | ±20V | - | 225mW (Ta) | 7.5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 6.2A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存103,584 |
|
MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 5V @ 250µA | 25nC @ 10V | 1000pF @ 25V | ±30V | - | 3.13W (Ta), 130W (Tc) | 1.5 Ohm @ 3.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 100V 9.2A TO-220AB
|
封裝: TO-220-3 |
庫存392,520 |
|
MOSFET (Metal Oxide) | 100V | 9.2A (Tc) | 10V | 4V @ 250µA | 16nC @ 10V | 360pF @ 25V | ±20V | - | 60W (Tc) | 270 mOhm @ 5.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH BARE DIE
|
封裝: - |
庫存5,792 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 550V 12A TO-263
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存3,424 |
|
MOSFET (Metal Oxide) | 550V | 12A (Tc) | 10V | 3.5V @ 440µA | 31nC @ 10V | 1190pF @ 100V | ±20V | - | 104W (Tc) | 299 mOhm @ 6.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3
|
封裝: TO-220-3 |
庫存3,600 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 2V @ 125µA | 105nC @ 10V | 2620pF @ 25V | ±20V | - | 190W (Tc) | 8.5 mOhm @ 52A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
IXYS |
MOSFET N-CH 500V 52A SOT-227B
|
封裝: SOT-227-4, miniBLOC |
庫存5,424 |
|
MOSFET (Metal Oxide) | 500V | 52A | 10V | 5V @ 8mA | 186nC @ 10V | 11000pF @ 25V | ±30V | - | 625W (Tc) | 85 mOhm @ 32A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
IXYS |
MOSFET N-CH 1000V 15A TO-247
|
封裝: TO-247-3 |
庫存3,152 |
|
MOSFET (Metal Oxide) | 1000V | 15A (Tc) | 10V | 4.5V @ 4mA | 220nC @ 10V | 4500pF @ 25V | ±20V | - | 360W (Tc) | 700 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
||
IXYS |
MOSFET N-CH 500V 19A ISOPLUS247
|
封裝: ISOPLUS247? |
庫存7,464 |
|
MOSFET (Metal Oxide) | 500V | 19A (Tc) | 10V | 5V @ 4mA | 93nC @ 10V | 5500pF @ 25V | ±30V | - | 156W (Tc) | 190 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | ISOPLUS247? |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 2.5A TO-220SIS
|
封裝: TO-220-3 Full Pack |
庫存2,224 |
|
MOSFET (Metal Oxide) | 650V | 2.5A (Ta) | 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | ±30V | - | 35W (Tc) | 2.51 Ohm @ 1.3A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Diodes Incorporated |
MOSFET NCH 100V 8.9A 8SO
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存6,512 |
|
MOSFET (Metal Oxide) | 100V | 8.9A (Ta) | 4.5V, 10V | 3V @ 250µA | 33.3nC @ 10V | 1871pF @ 50V | ±20V | - | 1.2W (Ta) | 15 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
ON Semiconductor |
MOSFET N-CH 100V SO8FL
|
封裝: 8-PowerTDFN, 5 Leads |
庫存2,080 |
|
MOSFET (Metal Oxide) | 100V | 5.6A (Ta), 19A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 7.9nC @ 10V | 480pF @ 25V | ±16V | - | 3.5W (Ta), 42W (Tc) | 46 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
ON Semiconductor |
MOSFET N-CH 100V 17A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存7,040 |
|
MOSFET (Metal Oxide) | 100V | 17A (Tc) | 10V | 4V @ 250µA | 20nC @ 10V | 620pF @ 25V | ±20V | - | 71W (Tc) | 81 mOhm @ 17A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Nexperia USA Inc. |
MOSFET P-CH 20V 2.5A SC-74
|
封裝: SC-74, SOT-457 |
庫存80,040 |
|
MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 7.5nC @ 4.5V | 550pF @ 10V | ±12V | - | 385mW (Ta) | 102 mOhm @ 2.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
||
STMicroelectronics |
MOSFET N-CH 650V 11A TO-220FP
|
封裝: TO-220-3 Full Pack |
庫存8,844 |
|
MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 5V @ 250µA | 22nC @ 10V | 816pF @ 100V | ±25V | - | 30W (Tc) | 340 mOhm @ 5.5A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 4.5A TO-220-3
|
封裝: TO-220-3 |
庫存60,012 |
|
MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 5V @ 250µA | 13nC @ 10V | 600pF @ 25V | ±25V | - | 100W (Tc) | 2 Ohm @ 2.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 560V 16A TO-247
|
封裝: TO-247-3 |
庫存16,692 |
|
MOSFET (Metal Oxide) | 560V | 16A (Tc) | 10V | 3.9V @ 675µA | 66nC @ 10V | 1600pF @ 25V | ±20V | - | 160W (Tc) | 280 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 500V 0.4A SOT-223
|
封裝: TO-261-4, TO-261AA |
庫存20,232 |
|
MOSFET (Metal Oxide) | 500V | 400mA (Ta) | 10V | 4V @ 1mA | - | 400pF @ 25V | ±20V | - | 1.8W (Ta) | 4 Ohm @ 400mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Nexperia USA Inc. |
MOSFET N-CH 55V 75A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存39,102 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 5V, 10V | 2V @ 1mA | 60nC @ 5V | 7565pF @ 25V | ±15V | - | 258W (Tc) | 5.4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET P-CH 200V 0.4A 4-DIP
|
封裝: 4-DIP (0.300", 7.62mm) |
庫存71,640 |
|
MOSFET (Metal Oxide) | 200V | 400mA (Ta) | 10V | 4V @ 250µA | 8.9nC @ 10V | 170pF @ 25V | ±20V | - | 1W (Ta) | 3 Ohm @ 240mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 40V 7.6A 8-SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存646,656 |
|
MOSFET (Metal Oxide) | 40V | 7.6A (Ta) | 4.5V, 10V | 3V @ 250µA | 11nC @ 5V | 760pF @ 20V | ±20V | - | 2.5W (Ta) | 29 mOhm @ 7.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
STMicroelectronics |
MOSFET N-CH 800V 10.5A TO-247
|
封裝: TO-247-3 |
庫存36,012 |
|
MOSFET (Metal Oxide) | 800V | 10.5A (Tc) | 10V | 4.5V @ 100µA | 87nC @ 10V | 2620pF @ 25V | ±30V | - | 190W (Tc) | 750 mOhm @ 5.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |