圖片 |
零件編號 |
製造商 |
描述 |
封裝 |
庫存 |
數量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 100V 100A TO262-3
|
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA |
庫存2,224 |
|
MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 4V @ 250µA | 181nC @ 10V | 12000pF @ 50V | ±20V | - | 300W (Tc) | 5.4 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 55V 80A TO-220
|
封裝: TO-220-3 |
庫存92,160 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 4V @ 250µA | 170nC @ 10V | 6790pF @ 25V | ±20V | - | 300W (Tc) | 5.1 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 17A TO-262
|
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA |
庫存2,528 |
|
MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 4V @ 250µA | 20nC @ 10V | 370pF @ 25V | ±20V | - | 3.8W (Ta), 45W (Tc) | 70 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET P-CH 30V 2A MICRO8
|
封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
庫存472,500 |
|
MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4.5V, 10V | 1V @ 250µA | 11nC @ 10V | 180pF @ 25V | ±20V | Schottky Diode (Isolated) | 1.25W (Ta) | 200 mOhm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Micro8? | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
||
Infineon Technologies |
MOSFET N-CH 40V 104A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存5,296 |
|
MOSFET (Metal Oxide) | 40V | 104A (Tc) | 4.5V, 10V | 1V @ 250µA | 68nC @ 4.5V | 3445pF @ 25V | ±16V | - | 2.4W (Ta), 167W (Tc) | 8 mOhm @ 62A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
NXP |
MOSFET N-CH 55V 12.9A SOT186A
|
封裝: TO-220-3 Full Pack, Isolated Tab |
庫存6,416 |
|
MOSFET (Metal Oxide) | 55V | 12.9A (Tc) | 10V | 4V @ 1mA | 9.8nC @ 10V | 320pF @ 25V | ±20V | - | 23W (Tc) | 75 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 75A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存21,468 |
|
MOSFET (Metal Oxide) | 60V | 75A (Tc) | 10V | 4V @ 250µA | 115nC @ 10V | 3600pF @ 25V | ±20V | - | 150W (Tc) | 13 mOhm @ 40A, 10V | -65°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 55V 160A HEXFET
|
封裝: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
庫存3,936 |
|
MOSFET (Metal Oxide) | 55V | 160A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 7820pF @ 25V | ±20V | - | 300W (Tc) | 2.6 mOhm @ 140A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
||
IXYS |
MOSFET N-CH 100V 200A TO-264
|
封裝: TO-264-3, TO-264AA |
庫存3,424 |
|
MOSFET (Metal Oxide) | 100V | 200A (Tc) | 10V | 5V @ 500µA | 240nC @ 10V | 7600pF @ 25V | ±20V | - | 800W (Tc) | 7.5 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
||
ON Semiconductor |
MOSFET N-CH 40V 46A SO8FL
|
封裝: 8-PowerTDFN |
庫存3,232 |
|
MOSFET (Metal Oxide) | 40V | 46A (Ta), 330A (Tc) | 4.5V, 10V | 2V @ 250µA | 11nC @ 4.5V | 7700pF @ 20V | ±20V | - | 3.3W (Ta), 160W (Tc) | - | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 5.6A 8SOP
|
封裝: 8-PowerVDFN |
庫存3,168 |
|
MOSFET (Metal Oxide) | 250V | 5.6A (Ta) | 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 100V | ±20V | - | 1.6W (Ta), 42W (Tc) | 198 mOhm @ 2.8A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 100V 10.5A TO-220
|
封裝: TO-220-3 |
庫存390,000 |
|
MOSFET (Metal Oxide) | 100V | 10.5A (Tc) | 10V | 4V @ 250µA | 38nC @ 10V | 1035pF @ 25V | ±30V | - | 66W (Tc) | 300 mOhm @ 5.3A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
ON Semiconductor |
MOSFET P-CH 20V 1.5A SCH6
|
封裝: SOT-563, SOT-666 |
庫存276,000 |
|
MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 1.8V, 4.5V | 1.4V @ 1mA | 1.7nC @ 4.5V | 120pF @ 10V | ±10V | - | 1W (Ta) | 241 mOhm @ 750mA, 4.5V | 150°C (TJ) | Surface Mount | 6-SCH | SOT-563, SOT-666 |
||
STMicroelectronics |
MOSFET N-CH 600V 13A TO220FP
|
封裝: TO-220-3 Full Pack |
庫存2,912 |
|
MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 5V @ 250µA | 20nC @ 10V | 800pF @ 100V | ±25V | - | 25W (Tc) | 295 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Nexperia USA Inc. |
MOSFET N-CH 100V 30A LFPAK
|
封裝: SC-100, SOT-669 |
庫存4,336 |
|
MOSFET (Metal Oxide) | 100V | 30A (Tc) | 5V, 10V | 2.1V @ 1mA | 21.6nC @ 5V | 2541pF @ 25V | ±10V | - | 94.9W (Tc) | 38 mOhm @ 5A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
IXYS |
MOSFET N-CH 1100V 40A PLUS264
|
封裝: TO-264-3, TO-264AA |
庫存6,864 |
|
MOSFET (Metal Oxide) | 1100V | 40A (Tc) | 10V | 6.5V @ 8mA | 300nC @ 10V | 14000pF @ 25V | ±30V | - | 1560W (Tc) | 260 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS264? | TO-264-3, TO-264AA |
||
Infineon Technologies |
MOSFET N-CH 60V 79A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存486,744 |
|
MOSFET (Metal Oxide) | 60V | 56A (Tc) | 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | ±20V | - | 110W (Tc) | 8.4 mOhm @ 47A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET P-CH 20V 3A SOT23
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存6,528 |
|
MOSFET (Metal Oxide) | 20V | 3A (Ta) | 2.5V, 4.5V | 1.25V @ 250µA | 7.3nC @ 4.5V | 443pF @ 16V | ±12V | - | 1.4W (Ta) | 72 mOhm @ 3.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 100V 100A TDSON-8
|
封裝: 8-PowerTDFN |
庫存197,460 |
|
MOSFET (Metal Oxide) | 100V | 13.8A (Ta), 100A (Tc) | 4.5V, 10V | 2.4V @ 110µA | 104nC @ 10V | 7400pF @ 50V | ±20V | - | 156W (Tc) | 8.2 mOhm @ 100A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Texas Instruments |
MOSFET N-CH 30V 65A 8SON
|
封裝: 8-PowerTDFN |
庫存401,340 |
|
MOSFET (Metal Oxide) | 30V | 65A (Tc) | 4.5V, 10V | 2V @ 250µA | 3.4nC @ 4.5V | 506pF @ 15V | ±20V | - | 3W (Ta) | 10.8 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (5x6) | 8-PowerTDFN |
||
IXYS |
MOSFET N-CH 300V 140A PLUS 247
|
封裝: TO-247-3 |
庫存34,464 |
|
MOSFET (Metal Oxide) | 300V | 140A (Tc) | 10V | 5V @ 8mA | 185nC @ 10V | 14800pF @ 25V | ±20V | - | 1040W (Tc) | 24 mOhm @ 70A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 2A SOT23F
|
封裝: SOT-23-3 Flat Leads |
庫存141,906 |
|
MOSFET (Metal Oxide) | 60V | 2A (Ta) | 4V, 10V | 2V @ 1mA | 8.3nC @ 10V | 330pF @ 10V | +10V, -20V | - | 1W (Ta) | 300 mOhm @ 1A, 10V | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 38A TO262F
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 38A (Tj) | 10V | 3V @ 250µA | 78 nC @ 10 V | 4010 pF @ 100 V | ±20V | - | 34.5W (Tc) | 95mOhm @ 19A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262F | TO-262-3 Long Leads, I2PAK, TO-262AA |
||
Panjit International Inc. |
600V SUPER JUNCTION MOSFET
|
封裝: - |
庫存6,000 |
|
MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 4V @ 250µA | 18.7 nC @ 10 V | 735 pF @ 400 V | ±30V | - | 30W (Tc) | 360mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB-F | TO-220-3 Full Pack, Isolated Tab |
||
Infineon Technologies |
TRENCH 40<-<100V
|
封裝: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
IXYS |
MOSFET N-CH 650V 8A TO263
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 8A (Tc) | 10V | 5V @ 250µA | 11 nC @ 10 V | 790 pF @ 25 V | ±30V | - | 150W (Ta) | 450mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
DISCRETE
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 17A (Tc) | 10V | 4.75V @ 250µA | 23 nC @ 10 V | 960 pF @ 100 V | ±25V | - | 142W (Tc) | 190mOhm @ 8.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TOLL (HV) | 8-PowerSFN |
||
onsemi |
NCH 2.5V DRIVE SERIES
|
封裝: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Rohm Semiconductor |
MOSFET N-CH 200V 10A TO252
|
封裝: - |
庫存7,395 |
|
MOSFET (Metal Oxide) | 200 V | 10A (Tc) | 10V | 5.25V @ 1mA | 25 nC @ 10 V | 1400 pF @ 25 V | ±30V | - | 85W (Tc) | 182mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
onsemi |
SIC MOS TO247-3L 70MOHM 1200V M3
|
封裝: - |
庫存1,350 |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 34A (Tc) | 18V | 4.4V @ 7mA | 57 nC @ 18 V | 1230 pF @ 800 V | +22V, -10V | - | 160W (Tc) | 87mOhm @ 15A, 18V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |