圖片 |
零件編號 |
製造商 |
描述 |
封裝 |
庫存 |
數量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 500V 13A PG-TO252
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存5,152 |
|
MOSFET (Metal Oxide) | 500V | 13A (Tc) | 13V | 3.5V @ 350µA | 32.6nC @ 10V | 773pF @ 100V | ±20V | - | 119W (Tc) | 280 mOhm @ 4.2A, 13V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET P-CH 60V 170MA SOT-23
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存6,464 |
|
MOSFET (Metal Oxide) | 60V | 170mA (Ta) | 4.5V, 10V | 2V @ 20µA | 1.5nC @ 10V | 19pF @ 25V | ±20V | - | 360mW (Ta) | 8 Ohm @ 170mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 80A TO-220
|
封裝: TO-220-3 |
庫存3,568 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2V @ 130µA | 105nC @ 10V | 3900pF @ 25V | ±20V | - | 188W (Tc) | 4.2 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 5.1A SOT223
|
封裝: TO-261-4, TO-261AA |
庫存639,876 |
|
MOSFET (Metal Oxide) | 55V | 5.1A (Ta) | 10V | 4V @ 250µA | 14nC @ 10V | 340pF @ 25V | ±20V | - | 1W (Ta) | 57.5 mOhm @ 3.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 40V 160A TO-262
|
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA |
庫存3,280 |
|
MOSFET (Metal Oxide) | 40V | 160A (Tc) | 4.3V, 10V | 3V @ 250µA | 140nC @ 5V | 6600pF @ 25V | ±20V | - | 3.8W (Ta), 200W (Tc) | 4 mOhm @ 95A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH
|
封裝: TO-226-3, TO-92-3 Long Body |
庫存6,832 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
||
Microsemi Corporation |
MOSFET N-CH TO-254AA
|
封裝: TO-254-3, TO-254AA (Straight Leads) |
庫存7,568 |
|
MOSFET (Metal Oxide) | 100V | 38A (Tc) | 10V | 4V @ 250µA | 125nC @ 10V | - | ±20V | - | 4W (Ta), 150W (Tc) | 65 mOhm @ 38A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-254AA | TO-254-3, TO-254AA (Straight Leads) |
||
ON Semiconductor |
MOSFET N-CH 40V 116A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存12,552 |
|
MOSFET (Metal Oxide) | 40V | 116A (Tc) | 5V, 10V | 3.5V @ 250µA | 88nC @ 10V | 4000pF @ 32V | ±20V | - | 3W (Ta), 150W (Tc) | 5.8 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 24A TO-3P
|
封裝: TO-3P-3, SC-65-3 |
庫存103,584 |
|
MOSFET (Metal Oxide) | 500V | 24A (Tc) | 10V | 5V @ 250µA | 120nC @ 10V | 4500pF @ 25V | ±30V | - | 290W (Tc) | 200 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 20A TO-3P
|
封裝: TO-3P-3, SC-65-3 |
庫存5,584 |
|
MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 4V @ 250µA | 170nC @ 10V | 6000pF @ 25V | ±30V | - | 235W (Tc) | 240 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
||
Vishay Siliconix |
MOSFET N-CH 500V 8A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存17,052 |
|
MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 4V @ 250µA | 38nC @ 10V | 1018pF @ 25V | ±30V | - | 3.1W (Ta), 125W (Tc) | 850 mOhm @ 4.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 500V 17A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存25,068 |
|
MOSFET (Metal Oxide) | 500V | 17A (Tc) | 10V | 4.5V @ 100µA | 119nC @ 10V | 2600pF @ 25V | ±30V | - | 190W (Tc) | 270 mOhm @ 8.5A, 10V | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 250V 3.8A PQFN56
|
封裝: 8-VQFN |
庫存5,200 |
|
MOSFET (Metal Oxide) | 250V | 3.8A (Ta) | 10V | 5V @ 150µA | 56nC @ 10V | 2150pF @ 50V | ±20V | - | 3.6W (Ta), 8.3W (Tc) | 100 mOhm @ 5.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-QFN | 8-VQFN |
||
Infineon Technologies |
MOSFET N-CH TO262-3
|
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA |
庫存3,072 |
|
MOSFET (Metal Oxide) | 80V | 80A (Tc) | 10V | 4V @ 90µA | 70nC @ 10V | 4800pF @ 25V | ±20V | - | 150W (Tc) | 5.8 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Sanken |
MOSFET N-CH 100V 66A TO-220
|
封裝: TO-220-3 |
庫存4,064 |
|
MOSFET (Metal Oxide) | 100V | 66A (Tc) | 4.5V, 10V | 2.5V @ 1.5mA | 88.8nC @ 10V | 6420pF @ 25V | ±20V | - | 135W (Tc) | 11.6 mOhm @ 33A, 10V | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
ON Semiconductor |
MOSFET N-CH 30V 34A 8WDFN
|
封裝: 8-PowerWDFN |
庫存5,424 |
|
MOSFET (Metal Oxide) | 30V | 6.6A (Ta), 34A(Tc) | 4.5V, 10V | 2.2V @ 250µA | 8.8nC @ 4.5V | 920pF @ 15V | ±20V | - | 810mW (Ta), 22.3W (Tc) | 11 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
ON Semiconductor |
MOSFET N-CH 30V 160A SO8FL
|
封裝: 8-PowerTDFN |
庫存6,432 |
|
MOSFET (Metal Oxide) | 30V | 22A (Ta), 106A (Tc) | 4.5V, 10V | 2.3V @ 1mA | 47.9nC @ 10V | 3250pF @ 15V | ±20V | - | 1.7W (Ta), 38W (Tc) | 2.1 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N CH 30V 14A 8SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存10,152 |
|
MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 2.2V @ 250µA | 18nC @ 10V | 770pF @ 15V | ±20V | - | 3.1W (Ta) | 9.5 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET N-CH 200V 2.6A SC70-6
|
封裝: PowerPAK? SC-70-6 |
庫存1,315,068 |
|
MOSFET (Metal Oxide) | 200V | 2.6A (Tc) | 1.8V, 4.5V | 1.4V @ 250µA | 14.5nC @ 10V | 350pF @ 100V | ±16V | - | 3.5W (Ta), 19W (Tc) | 1.38 Ohm @ 750mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Single | PowerPAK? SC-70-6 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 19A TO-220
|
封裝: TO-220-3 |
庫存37,548 |
|
MOSFET (Metal Oxide) | 200V | 19A (Tc) | 10V | 4V @ 250µA | 53nC @ 10V | 1080pF @ 25V | ±30V | - | 139W (Tc) | 170 mOhm @ 9.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 3.9A SOT223
|
封裝: TO-261-4, TO-261AA |
庫存16,548 |
|
MOSFET (Metal Oxide) | 30V | 3.9A (Ta) | 4V, 10V | 2.4V @ 250µA | 14nC @ 5V | 530pF @ 25V | ±16V | - | 1W (Ta) | 45 mOhm @ 3.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Diodes Incorporated |
MOSFET P-CH 30V 7.3A 8SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存540,492 |
|
MOSFET (Metal Oxide) | 30V | 7.3A (Ta) | 5V, 20V | 2.5V @ 250µA | 35.4nC @ 10V | 1614pF @ 15V | ±25V | - | 2.5W (Ta) | 16 mOhm @ 11A, 20V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 100V 40A TDSON-8
|
封裝: 8-PowerTDFN |
庫存37,380 |
|
MOSFET (Metal Oxide) | 100V | 7.2A (Ta), 40A (Tc) | 10V | 4V @ 43µA | 17nC @ 10V | 1100pF @ 50V | ±20V | - | 78W (Tc) | 25.2 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Diodes Incorporated |
MOSFET N-CH 60V 0.38A
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存7,568 |
|
MOSFET (Metal Oxide) | 60V | 380mA (Ta) | 1.8V, 5V | 1V @ 250µA | 0.4nC @ 4.5V | 28.5pF @ 30V | ±20V | - | 370mW (Ta) | 2 Ohm @ 50mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET N-CH 400V 3.1A I-PAK
|
封裝: TO-251-3 Short Leads, IPak, TO-251AA |
庫存7,824 |
|
MOSFET (Metal Oxide) | 400V | 3.1A (Tc) | 10V | 4V @ 250µA | 20nC @ 10V | 350pF @ 25V | ±20V | - | 2.5W (Ta), 42W (Tc) | 1.8 Ohm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET P-CH 30V 2.3A SOT-23-3
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存4,524,612 |
|
MOSFET (Metal Oxide) | 30V | 2.3A (Ta) | 4.5V, 10V | 2.4V @ 10µA | 2nC @ 4.5V | 160pF @ 25V | ±20V | - | 1.25W (Ta) | 165 mOhm @ 2.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Micro3?/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Cree/Wolfspeed |
MOSFET N-CH 900V 11A
|
封裝: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA |
庫存18,312 |
|
SiCFET (Silicon Carbide) | 900V | 11A (Tc) | 15V | 3.5V @ 1.2mA | 9.5nC @ 15V | 150pF @ 600V | +18V, -8V | - | 50W (Tc) | 360 mOhm @ 7.5A, 15V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA |
||
Vishay Siliconix |
MOSFET N-CH 60V 17A TO-220AB
|
封裝: TO-220-3 |
庫存17,442 |
|
MOSFET (Metal Oxide) | 60V | 17A (Tc) | 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | ±20V | - | 60W (Tc) | 100 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 10A 8-SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存328,968 |
|
MOSFET (Metal Oxide) | 60V | 10A (Ta) | 6V, 10V | 4V @ 250µA | 70nC @ 10V | 2900pF @ 15V | ±20V | - | 2.5W (Ta) | 14 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 1.7A SOT-223
|
封裝: TO-261-4, TO-261AA |
庫存179,892 |
|
MOSFET (Metal Oxide) | 100V | 1.7A (Tc) | 5V, 10V | 2V @ 250µA | 6nC @ 5V | 290pF @ 25V | ±20V | - | 2W (Tc) | 350 mOhm @ 850mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |