|
|
EPC |
TRANS GAN 300V 150MO BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 194pF @ 240V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 3A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
封裝: Die |
庫存3,520 |
|
|
|
EPC |
TRANS GAN 150V 31A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 9mA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 75V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
封裝: Die |
庫存2,768 |
|
|
|
EPC |
TRANS GAN 60V 31A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
封裝: Die |
庫存7,792 |
|
|
|
EPC |
TRANS GAN 80V 31A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 12mA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 40V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
封裝: Die |
庫存7,984 |
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|
|
EPC |
TRANS GAN 40V 3.8A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 20V
- Vgs (Max): +6V, -5V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 500mA, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
封裝: Die |
庫存6,272 |
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|
|
EPC |
TRANS GAN 40V 60A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 19mA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 37A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
封裝: Die |
庫存6,432 |
|
|
|
EPC |
TRANS GAN 80V 60A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 14mA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 40V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 29A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
封裝: Die |
庫存7,752 |
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|
|
EPC |
TRANS GAN 60V 60A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 16mA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 30V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 31A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
封裝: Die |
庫存5,840 |
|
|
|
EPC |
TRANS GAN 150V 31A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 9mA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 75V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
封裝: Die |
庫存14,268 |
|
|
|
EPC |
TRANS GAN 200V 31A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 100V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
封裝: Die |
庫存27,486 |
|
|
|
EPC |
MOSFET NCH 40V 31A DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 16mA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 20V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 30A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
封裝: Die |
庫存49,674 |
|
|
|
EPC |
TRANS GAN 80V BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 40V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
封裝: Die |
庫存1,616,796 |
|
|
|
EPC |
MOSFET NCH 15V 3.4A DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 15V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 0.93nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 6V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 1.5A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
封裝: Die |
庫存381,288 |
|
|
|
EPC |
TRANS GAN 100V 550MOHM BUMPED DI
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 0.12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 50V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 550 mOhm @ 100mA, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: -
- Package / Case: -
|
封裝: - |
庫存249,630 |
|
|
|
EPC |
TRANS GAN 100V 2.8OHM BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 0.044nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 8.4pF @ 50V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 50mA, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
封裝: Die |
庫存1,891,686 |
|
|
|
EPC |
TRANS GAN 30V 60A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 15V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 40A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
封裝: Die |
庫存14,196 |
|
|
|
EPC |
TRANS GAN 40V 33A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 9mA
- Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 20V
- Vgs (Max): +6V, -5V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 33A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die Outline (11-Solder Bar)
- Package / Case: Die
|
封裝: Die |
庫存22,938 |
|
|
|
EPC |
TRANS GAN 65V 2.7A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 65V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 32.5V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 530 mOhm @ 500mA, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
封裝: Die |
庫存607,644 |
|
|
|
EPC |
TRANS GAN 15V BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 15V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 0.93nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 6V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 1.5A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
封裝: Die |
庫存19,596 |
|
|
|
EPC |
TRANS GAN 100V 48A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 11mA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 50V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
封裝: Die |
庫存70,512 |
|
|
|
EPC |
TRANS GAN 100V 25A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 50V
- Vgs (Max): +6V, -5V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die Outline (11-Solder Bar)
- Package / Case: Die
|
封裝: Die |
庫存223,170 |
|
|
|
EPC |
TRANS GAN 65V 2.7A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 65V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 52pF @ 32.5V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 500mA, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
封裝: Die |
庫存23,238 |
|
|
|
EPC |
TRANS GAN 100V 36A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 50V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die Outline (11-Solder Bar)
- Package / Case: Die
|
封裝: Die |
庫存630,336 |
|
|
|
EPC |
TRANS GAN 40V 10A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 20V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die Outline (5-Solder Bar)
- Package / Case: Die
|
封裝: Die |
庫存824,184 |
|
|
|
EPC |
TRANS GAN 2N-CH 80V BUMPED DIE
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
- Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
|
封裝: Die |
庫存5,968 |
|
|
|
EPC |
TRANS GAN ASYMMETRICAL HALF BRID
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
- Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
|
封裝: Die |
庫存3,200 |
|
|
|
EPC |
MOSFET 2NCH 80V 9.5A DIE
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 9.5A
- Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
|
封裝: Die |
庫存46,992 |
|
|
|
EPC |
TRANS GAN 3N-CH BUMPED DIE
- FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 60V, 100V
- Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 9-VFBGA
- Supplier Device Package: 9-BGA (1.35x1.35)
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封裝: 9-VFBGA |
庫存23,700 |
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EPC |
TRANS GAN 2N-CH 100V BUMPED DIE
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1.7A
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 2A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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封裝: Die |
庫存230,418 |
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EPC |
TEXT WIRELESS POWER HANDBOOK
- Accessory Type: Guide
- For Use With/Related Products: -
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封裝: - |
庫存2,304 |
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