ISSI, Integrated Silicon Solution Inc 產品

IS42SM32160E-6BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 166MHZ 90BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile
• Memory Size: 512Mb (16M x 32)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.5ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-TFBGA
• Supplier Device Package: 90-TFBGA (8x13)

封裝: 90-TFBGA

IS61NLP25636A-200B2I-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 9MBIT 200MHZ 119BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 9Mb (256K x 36)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: -
• Access Time: 3.1ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 119-BBGA
• Supplier Device Package: 119-PBGA (14x22)

封裝: 119-BBGA

IS49NLS18320-25BI

ISSI, Integrated Silicon Solution Inc

IC DRAM 576MBIT 400MHZ 144BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: DRAM
• Memory Size: 576Mb (32M x 18)
• Memory Interface: Parallel
• Clock Frequency: 400MHz
• Write Cycle Time - Word, Page: -
• Access Time: 20ns
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 144-TFBGA
• Supplier Device Package: 144-FCBGA (11x18.5)

封裝: 144-TFBGA

IS49NLC36160-25B

ISSI, Integrated Silicon Solution Inc

IC DRAM 576MBIT 400MHZ 144BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: DRAM
• Memory Size: 576Mb (16M x 36)
• Memory Interface: Parallel
• Clock Frequency: 400MHz
• Write Cycle Time - Word, Page: -
• Access Time: 20ns
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 144-TFBGA
• Supplier Device Package: 144-FCBGA (11x18.5)

封裝: 144-TFBGA

IS45S32800D-6TLA1

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 86TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mb (32M x 8)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 86-TFSOP (0.400", 10.16mm Width)
• Supplier Device Package: 86-TSOP II

封裝: 86-TFSOP (0.400", 10.16mm Width)

IS42S83200D-6TLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 54TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mb (32M x 8)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 54-TSOP II

封裝: 54-TSOP (0.400", 10.16mm Width)

IS42S32200C1-55T

ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 183MHZ 86TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 64Mb (2M x 32)
• Memory Interface: Parallel
• Clock Frequency: 183MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5ns
• Voltage - Supply: 3.15 V ~ 3.45 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 86-TFSOP (0.400", 10.16mm Width)
• Supplier Device Package: 86-TSOP II

封裝: 86-TFSOP (0.400", 10.16mm Width)

IS41LV16105B-50KLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 16MBIT 50NS 42SOJ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: DRAM - FP
• Memory Size: 16Mb (1M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 25ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 42-BSOJ (0.400", 10.16mm)
• Supplier Device Package: 42-SOJ

封裝: 42-BSOJ (0.400", 10.16mm)

IS61VVPS204818B-166B3LI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 36MBIT 166MHZ 165FBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 36Mb (2M x 18)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: 3.8ns
• Voltage - Supply: 1.71 V ~ 1.89 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 165-TBGA
• Supplier Device Package: 165-TFBGA (13x15)

封裝: 165-TBGA

IS62WV20488BLL-25MLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 16MBIT 25NS 48MINIBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 16Mb (2M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 25ns
• Access Time: 25ns
• Voltage - Supply: 2.4 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFBGA
• Supplier Device Package: 48-miniBGA (9x11)

封裝: 48-TFBGA

IS42S32160F-75EBLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 133MHZ 90BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 512Mb (16M x 32)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: -
• Access Time: 6ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-TFBGA
• Supplier Device Package: 90-TFBGA (8x13)

封裝: 90-TFBGA

IS42S16320F-6BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 167MHZ 54BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 512Mb (32M x 16)
• Memory Interface: Parallel
• Clock Frequency: 167MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TFBGA
• Supplier Device Package: 54-TWBGA (13x8)

封裝: 54-TFBGA

IS43LR16640A-6BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 166MHZ 60BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile DDR
• Memory Size: 1Gb (64M x 16)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 60-TFBGA
• Supplier Device Package: 60-TWBGA (8x10)

封裝: 60-TFBGA

IS61WV51216EDBLL-10BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 8MBIT 10NS 48BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 8Mb (512K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 10ns
• Access Time: 10ns
• Voltage - Supply: 2.4 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFBGA
• Supplier Device Package: 48-TFBGA (6x8)

封裝: 48-TFBGA

IS43LR32160B-6BL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 166MHZ 90BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile DDR
• Memory Size: 512Mb (16M x 32)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: 12ns
• Access Time: 5.5ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-TFBGA
• Supplier Device Package: 90-TFBGA (8x13)

封裝: 90-TFBGA

IS43R86400D-5BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 200MHZ 60BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 512Mb (64M x 8)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 700ps
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 60-TFBGA
• Supplier Device Package: 60-TFBGA (8x13)

封裝: 60-TFBGA

IS62WV20488EBLL-55BLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 16MBIT 55NS 48BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 16Mb (2M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 55ns
• Access Time: 55ns
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFBGA
• Supplier Device Package: 48-TFBGA (6x8)

封裝: 48-TFBGA

IS42SM32800K-75BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 133MHZ 90BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile
• Memory Size: 256Mb (8M x 32)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: -
• Access Time: 6ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-TFBGA
• Supplier Device Package: 90-TFBGA (8x13)

封裝: 90-TFBGA

IS43TR81280BL-107MBLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 933MHZ 78BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3L
• Memory Size: 1Gb (128M x 8)
• Memory Interface: Parallel
• Clock Frequency: 933MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 20ns
• Voltage - Supply: 1.283 V ~ 1.45 V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 78-TFBGA
• Supplier Device Package: 78-TWBGA (8x10.5)

封裝: 78-TFBGA

IS64WV12816DBLL-12CTLA3-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 2MBIT 12NS 44TSOP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 2Mb (128K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 12ns
• Access Time: 12ns
• Voltage - Supply: 2.4 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 44-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 44-TSOP II

封裝: 44-TSOP (0.400", 10.16mm Width)

IS42S16160J-6BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 54BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mb (16M x 16)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TFBGA
• Supplier Device Package: 54-TFBGA (8x8)

封裝: 54-TFBGA

IS61WV3216BLL-12TLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 512KBIT 12NS 44TSOP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 512Kb (32K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 12ns
• Access Time: 12ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 44-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 44-TSOP II

封裝: 44-TSOP (0.400", 10.16mm Width)

IS61LF102436B-7.5TQLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 36M PARALLEL 117MHZ

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 36Mb (1M x 36)
• Memory Interface: Parallel
• Clock Frequency: 117MHz
• Write Cycle Time - Word, Page: -
• Access Time: 7.5ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x20)

封裝: 100-LQFP

IS43LD32640B-18BPLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 533MHZ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR2-S4
• Memory Size: 2Gb (64M x 32)
• Memory Interface: Parallel
• Clock Frequency: 533MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 168-VFBGA
• Supplier Device Package: 168-VFBGA (12x12)

封裝: 168-VFBGA

IS46TR16640B-15GBLA2

ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 667MHZ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3
• Memory Size: 1Gb (64M x 16)
• Memory Interface: Parallel
• Clock Frequency: 667MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 20ns
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: -40°C ~ 105°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-TWBGA (9x13)

封裝: 96-TFBGA

IS43DR81280C-3DBLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 60TWBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR2
• Memory Size: 1Gb (128M x 8)
• Memory Interface: Parallel
• Clock Frequency: 333MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 450ps
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 60-TFBGA
• Supplier Device Package: 60-TWBGA (8x10.5)

封裝: 60-TFBGA

IS42VM32100D-75BLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 32M PARALLEL 133MHZ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile
• Memory Size: 32Mb (1M x 32)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: -
• Access Time: 6ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-TFBGA
• Supplier Device Package: 90-TFBGA (8x13)

封裝: 90-TFBGA

IS25LP128-JLLE-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 128M SPI 133MHZ 8WSON

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 128Mb (16M x 8)
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 1ms
• Access Time: -
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN Exposed Pad
• Supplier Device Package: 8-WSON (8x6)

封裝: 8-WDFN Exposed Pad

IS61VPS51236A-200B3I

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165TFBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 18Mb (512K x 36)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: -
• Access Time: 3.1ns
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 165-TBGA
• Supplier Device Package: 165-TFBGA (13x15)

封裝: 165-TBGA

IS61NLF25672-6.5B1-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 209LFBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 18Mb (256K x 72)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: -
• Access Time: 6.5ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 209-BGA
• Supplier Device Package: 209-LFBGA (14x22)

封裝: 209-BGA