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IXYS |
IGBT 1700V 44A 200W I4PAC
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1700V
- Current - Collector (Ic) (Max): 44A
- Current - Collector Pulsed (Icm): 200A
- Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 32A
- Power - Max: 200W
- Switching Energy: 10.6mJ (off)
- Input Type: Standard
- Gate Charge: 146nC
- Td (on/off) @ 25°C: 45ns/270ns
- Test Condition: 1020V, 32A, 2.7 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac?-5 (3 leads)
- Supplier Device Package: ISOPLUS i4-PAC?
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封裝: i4-Pac?-5 (3 leads) |
庫存3,616 |
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IXYS |
IGBT 1200V 60A 300W TO247AD
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 60A
- Current - Collector Pulsed (Icm): 76A
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 30A
- Power - Max: 300W
- Switching Energy: 4.6mJ (on), 3.4mJ (off)
- Input Type: Standard
- Gate Charge: 120nC
- Td (on/off) @ 25°C: -
- Test Condition: 600V, 30A, 47 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-247AD (IXDH)
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封裝: TO-3P-3 Full Pack |
庫存3,008 |
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IXYS |
IGBT 600V 250W TO247AD
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 200A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
- Power - Max: 250W
- Switching Energy: 540µJ (on), 800µJ (off)
- Input Type: Standard
- Gate Charge: 80nC
- Td (on/off) @ 25°C: 19ns/125ns
- Test Condition: 400V, 30A, 5 Ohm, 15V
- Reverse Recovery Time (trr): 25ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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封裝: TO-247-3 |
庫存2,112 |
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IXYS |
1700V/108A HIGH VOLTAGE XPT IGB
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1700V
- Current - Collector (Ic) (Max): 108A
- Current - Collector Pulsed (Icm): 255A
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A
- Power - Max: 937W
- Switching Energy: 5.9mJ (on), 3.3mJ (off)
- Input Type: Standard
- Gate Charge: 140nC
- Td (on/off) @ 25°C: 28ns/150ns
- Test Condition: 850V, 30A, 2.7 Ohm, 15V
- Reverse Recovery Time (trr): 160ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PLUS247?-3
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封裝: TO-247-3 |
庫存6,960 |
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IXYS |
IGBT 1200V 36A 230W TO-247AD
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 36A
- Current - Collector Pulsed (Icm): 88A
- Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
- Power - Max: 230W
- Switching Energy: 1.3mJ (on), 500µJ (off)
- Input Type: Standard
- Gate Charge: 53nC
- Td (on/off) @ 25°C: 20ns/90ns
- Test Condition: 600V, 20A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 195ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXYH)
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封裝: TO-247-3 |
庫存6,640 |
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IXYS |
IGBT 1200V 75A 300W TO268
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 75A
- Current - Collector Pulsed (Icm): 230A
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 32A
- Power - Max: 300W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 89nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
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封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
庫存7,068 |
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IXYS |
MODULE IGBT CBI E2
- IGBT Type: NPT
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 52A
- Power - Max: 225W
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 35A
- Current - Collector Cutoff (Max): 400µA
- Input Capacitance (Cies) @ Vce: 2nF @ 25V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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封裝: E2 |
庫存6,464 |
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IXYS |
IGBT H-BRIDGE 600V E2PACK
- IGBT Type: -
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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封裝: E2 |
庫存3,408 |
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IXYS |
MOSFET N-CH 1000V 22A I4-PAC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 390 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS i4-PAC?
- Package / Case: i4-Pac?-5 (3 leads)
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封裝: i4-Pac?-5 (3 leads) |
庫存2,288 |
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IXYS |
MOSFET N-CH 150V 240A SOT227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 240A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 460nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 32000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 830W (Tc)
- Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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封裝: SOT-227-4, miniBLOC |
庫存3,568 |
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IXYS |
MOSFET N-CH 600V 52A PLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 198nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 735W (Tc)
- Rds On (Max) @ Id, Vgs: 115 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
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封裝: TO-247-3 |
庫存7,856 |
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IXYS |
MOSFET N-CH 500V 48A TO-264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 24A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264AA (IXFK)
- Package / Case: TO-264-3, TO-264AA
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封裝: TO-264-3, TO-264AA |
庫存7,312 |
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IXYS |
MOSFET N-CH 1700V 1A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1700V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 3090pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 290W (Tc)
- Rds On (Max) @ Id, Vgs: 16 Ohm @ 500mA, 0V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存2,048 |
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IXYS |
MOSFET N-CH 500V 50A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4335pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 960W (Tc)
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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封裝: TO-247-3 |
庫存5,312 |
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IXYS |
MOSFET N-CH 250V 102A PLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: PLUS220
- Package / Case: TO-220-3, Short Tab
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封裝: TO-220-3, Short Tab |
庫存3,808 |
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IXYS |
MOSFET P-CH 65V 120A TO-247
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 65V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 298W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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封裝: TO-247-3 |
庫存3,440 |
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IXYS |
MOSFET N-CH 250V 96A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 625W (Tc)
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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封裝: TO-3P-3, SC-65-3 |
庫存390,000 |
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IXYS |
MOSFET N-CH 200V 36A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封裝: TO-220-3 |
庫存4,768 |
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IXYS |
MOSFET N-CH 650V 12A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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封裝: TO-247-3 |
庫存7,024 |
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IXYS |
MOSFET N-CH 1KV 750MA TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 17 Ohm @ 375mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存7,744 |
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IXYS |
MOSFET N-CH 100V 130A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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封裝: TO-3P-3, SC-65-3 |
庫存424,500 |
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IXYS |
MOD THYRISTOR DUAL 1800V TO240AA
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1800V
- Current - On State (It (AV)) (Max): 64A
- Current - On State (It (RMS)) (Max): 100A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
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封裝: TO-240AA |
庫存7,200 |
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IXYS |
MODULE AC CONTROL 800V ECO-PAC1
- Structure: 1-Phase Controller - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 800V
- Current - On State (It (AV)) (Max): 58A
- Current - On State (It (RMS)) (Max): 90A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
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封裝: Module |
庫存5,600 |
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IXYS |
THYRISTOR PHASE CTRL 3HV I4-PAC
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 21A
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): 1.4V
- Current - Gate Trigger (Igt) (Max): 55mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 50Hz
- Current - Hold (Ih) (Max): 100mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac?-5
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封裝: i4-Pac?-5 |
庫存5,392 |
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IXYS |
DIODE GEN PURP 800V 45A TO247AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 45A
- Voltage - Forward (Vf) (Max) @ If: 1.28V @ 45A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20µA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -40°C ~ 175°C
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封裝: TO-247-2 |
庫存4,000 |
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IXYS |
IC BREAKING RECTIFIER 1400V 1.1A
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Braking Rectifier
- Voltage - DC Reverse (Vr) (Max): 1400V
- Current - Average Rectified (Io) (per Diode): 1.5A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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封裝: Module |
庫存5,264 |
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IXYS |
DIODE ARRAY SCHOTTKY 100V TO220
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io) (per Diode): 15A
- Voltage - Forward (Vf) (Max) @ If: 820mV @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 100V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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封裝: TO-220-3 |
庫存51,600 |
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IXYS |
DIODE ARRAY SCHOTTKY 150V TO220
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300µA @ 150V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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封裝: TO-220-3 |
庫存16,872 |
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IXYS |
RECT BRIDGE 3PH 1200V V2-PACK
- Diode Type: Three Phase (Braking)
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 188A
- Voltage - Forward (Vf) (Max) @ If: 2.7V @ 30A
- Current - Reverse Leakage @ Vr: 300µA @ 1200V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: V2-PAK
- Supplier Device Package: V2-PAK
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封裝: V2-PAK |
庫存5,920 |
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IXYS |
RECT BRIDGE 3PH 1600V ECO-PAC2
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1600V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.14V @ 40A
- Current - Reverse Leakage @ Vr: 100µA @ 1600V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC2
- Supplier Device Package: ECO-PAC2
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封裝: ECO-PAC2 |
庫存2,576 |
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