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IXYS |
IGBT 600V 55A 200W TO247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 55A
- Current - Collector Pulsed (Icm): 110A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A
- Power - Max: 200W
- Switching Energy: 1.5mJ (off)
- Input Type: Standard
- Gate Charge: 100nC
- Td (on/off) @ 25°C: 30ns/150ns
- Test Condition: 480V, 30A, 4.7 Ohm, 15V
- Reverse Recovery Time (trr): 50ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXSH)
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封裝: TO-247-3 |
庫存390,000 |
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IXYS |
IGBT 600V 20A 63W ISOPLUS220
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 20A
- Current - Collector Pulsed (Icm): 100A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
- Power - Max: 63W
- Switching Energy: 60µJ (off)
- Input Type: Standard
- Gate Charge: 32nC
- Td (on/off) @ 25°C: 25ns/60ns
- Test Condition: 400V, 12A, 22 Ohm, 15V
- Reverse Recovery Time (trr): 30ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: ISOPLUS220?
- Supplier Device Package: ISOPLUS220?
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封裝: ISOPLUS220? |
庫存3,104 |
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IXYS |
IGBT 1200V 48A 250W TO247AD
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 48A
- Current - Collector Pulsed (Icm): 96A
- Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
- Power - Max: 250W
- Switching Energy: 1.16mJ (on), 470µJ (off)
- Input Type: Standard
- Gate Charge: 79nC
- Td (on/off) @ 25°C: 16ns/93ns
- Test Condition: 600V, 20A, 5 Ohm, 15V
- Reverse Recovery Time (trr): 70ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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封裝: TO-247-3 |
庫存4,832 |
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IXYS |
IGBT 1200V 40A 190W TO220
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 40A
- Current - Collector Pulsed (Icm): 100A
- Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
- Power - Max: 190W
- Switching Energy: 2.1mJ (off)
- Input Type: Standard
- Gate Charge: 72nC
- Td (on/off) @ 25°C: 25ns/150ns
- Test Condition: 960V, 20A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 40ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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封裝: TO-220-3 |
庫存2,640 |
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IXYS |
MOSFET N-CH 175V 150A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 175V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 830W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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封裝: TO-247-3 |
庫存6,032 |
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IXYS |
MOSFET N-CH 1200V 12A PLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 543W (Tc)
- Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS220
- Package / Case: TO-220-3, Short Tab
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封裝: TO-220-3, Short Tab |
庫存5,248 |
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IXYS |
MOSFET N-CH 600V 26A PLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 460W (Tc)
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS220
- Package / Case: TO-220-3, Short Tab
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封裝: TO-220-3, Short Tab |
庫存5,280 |
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IXYS |
MOSFET N-CH 600V 20A TO-247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 350 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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封裝: TO-247-3 |
庫存46,032 |
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IXYS |
MOSFET N-CH 1500V 20A TO-264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1500V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1250W (Tc)
- Rds On (Max) @ Id, Vgs: 1 Ohm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 (IXTK)
- Package / Case: TO-264-3, TO-264AA
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封裝: TO-264-3, TO-264AA |
庫存3,584 |
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IXYS |
MOSFET N-CH 900V 16A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 650 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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封裝: TO-247-3 |
庫存390,000 |
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IXYS |
MOSFET N-CH 200V 74A TO-268
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
庫存4,656 |
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IXYS |
MOSFET N-CH 250V 140A PLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 960W (Tc)
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
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封裝: TO-247-3 |
庫存2,784 |
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IXYS |
MOSFET N-CH 1000V 20A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 660W (Tc)
- Rds On (Max) @ Id, Vgs: 570 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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封裝: TO-247-3 |
庫存3,200 |
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IXYS |
MOSFET N-CH 500V 42A TO3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 830W (Tc)
- Rds On (Max) @ Id, Vgs: 145 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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封裝: TO-3P-3, SC-65-3 |
庫存5,952 |
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IXYS |
MOSFET N-CH 600V 14A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 327W (Tc)
- Rds On (Max) @ Id, Vgs: 540 mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封裝: TO-220-3 |
庫存5,328 |
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IXYS |
MOSFET N-CH 100V 130A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存6,400 |
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IXYS |
MOSFET N-CH 4500V 2A I5PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 4500V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 156nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 220W (Tc)
- Rds On (Max) @ Id, Vgs: 23 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUSi5-Pak?
- Package / Case: ISOPLUSi5-Pak?
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封裝: ISOPLUSi5-Pak? |
庫存6,492 |
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IXYS |
MOSFET N-CH 40V 600A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 600A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 590nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 940W (Tc)
- Rds On (Max) @ Id, Vgs: 1.05 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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封裝: SOT-227-4, miniBLOC |
庫存7,152 |
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IXYS |
RECT BRIDGE 1PH 1400V FO-T-A
- Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)
- Number of SCRs, Diodes: 2 SCRs, 2 Diodes
- Voltage - Off State: 1400V
- Current - On State (It (AV)) (Max): 53A
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: FO-T-A
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封裝: FO-T-A |
庫存7,104 |
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IXYS |
MOD THYRISTOR/DIO 1400V TO-240AA
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1400V
- Current - On State (It (AV)) (Max): 32A
- Current - On State (It (RMS)) (Max): 50A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
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封裝: TO-240AA |
庫存2,816 |
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IXYS |
MODULE AC CONTROL 800V ECO-PAC1
- Structure: 1-Phase Controller - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 800V
- Current - On State (It (AV)) (Max): 58A
- Current - On State (It (RMS)) (Max): 90A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
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封裝: Module |
庫存3,040 |
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IXYS |
THYRISTOR MODULE 1600V 2X32A
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 32A
- Current - On State (It (RMS)) (Max): 50A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
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封裝: TO-240AA |
庫存6,912 |
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IXYS |
DIODE GEN PURP 600V 30A TO247AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 250µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -55°C ~ 175°C
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封裝: TO-247-2 |
庫存48,288 |
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IXYS |
DIODE MODULE 1.4KV 950A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1400V
- Current - Average Rectified (Io) (per Diode): 950A
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 18µs
- Current - Reverse Leakage @ Vr: 50mA @ 1400V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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封裝: Module |
庫存5,472 |
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IXYS |
DIODE ARRAY 600V 15A ISOPLUS220
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io) (per Diode): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: ISOPLUS220?
- Supplier Device Package: ISOPLUS220?
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封裝: ISOPLUS220? |
庫存3,536 |
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IXYS |
DIODE ARRAY SCHOTTKY 45V TO247AD
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io) (per Diode): 40A
- Voltage - Forward (Vf) (Max) @ If: 780mV @ 40A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 750nA @ 45V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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封裝: TO-247-3 |
庫存4,752 |
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IXYS |
DIODE ARRAY GP 600V 15A TO247AD
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io) (per Diode): 15A
- Voltage - Forward (Vf) (Max) @ If: 2.03V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-247AD
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封裝: TO-3P-3 Full Pack |
庫存7,504 |
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IXYS |
RECT BRIDGE 3PH 58A 1800V PWS-B
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1800V
- Current - Average Rectified (Io): 58A
- Voltage - Forward (Vf) (Max) @ If: 1.03V @ 20A
- Current - Reverse Leakage @ Vr: 100µA @ 1800V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-B
- Supplier Device Package: PWS-B
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封裝: PWS-B |
庫存5,488 |
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IXYS |
3-PHASE BRIDGE RECT 1200V 40A
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.28V @ 30A
- Current - Reverse Leakage @ Vr: 40µA @ 1200V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 5-SIP
- Supplier Device Package: 5-SIP
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封裝: 5-SIP |
庫存9,780 |
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IXYS |
IC DIODE MODULE BOD 0.9A 2400V
- Voltage - Clamping: 2400V (2.4kV)
- Technology: Mixed Technology
- Number of Circuits: 3
- Number of Circuits: 3
- Applications: High Voltage
- Mounting Type: PCB, Through Hole
- Package / Case: Radial
- Supplier Device Package: BOD
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封裝: Radial |
庫存7,452 |
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