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IXYS |
IGBT 600V 48A 150W TO268
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 48A
- Current - Collector Pulsed (Icm): 80A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
- Power - Max: 150W
- Switching Energy: 240µJ (off)
- Input Type: Standard
- Gate Charge: 55nC
- Td (on/off) @ 25°C: 15ns/75ns
- Test Condition: 480V, 24A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 25ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
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封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
庫存4,000 |
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IXYS |
IGBT 600V 24A 100W TO247AD
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 24A
- Current - Collector Pulsed (Icm): 48A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
- Power - Max: 100W
- Switching Energy: 90µJ (off)
- Input Type: Standard
- Gate Charge: 32nC
- Td (on/off) @ 25°C: 20ns/60ns
- Test Condition: 480V, 12A, 18 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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封裝: TO-247-3 |
庫存3,360 |
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IXYS |
IGBT 600V 156A 520W ISOPLUS247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 156A
- Current - Collector Pulsed (Icm): 300A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
- Power - Max: 520W
- Switching Energy: 2.4mJ (on), 5.5mJ (off)
- Input Type: Standard
- Gate Charge: 350nC
- Td (on/off) @ 25°C: 60ns/200ns
- Test Condition: 480V, 100A, 2.4 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: ISOPLUS247?
- Supplier Device Package: ISOPLUS247?
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封裝: ISOPLUS247? |
庫存3,216 |
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IXYS |
IGBT 600V 75A 400W TO247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 75A
- Current - Collector Pulsed (Icm): 200A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: 400W
- Switching Energy: 550µJ (off)
- Input Type: Standard
- Gate Charge: 140nC
- Td (on/off) @ 25°C: 18ns/190ns
- Test Condition: 480V, 40A, 5 Ohm, 15V
- Reverse Recovery Time (trr): 35ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PLUS247?-3
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封裝: TO-247-3 |
庫存2,064 |
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IXYS |
IGBT 3000V 34A 150W ISOPLUSI4
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 3000V
- Current - Collector (Ic) (Max): 34A
- Current - Collector Pulsed (Icm): 150A
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
- Power - Max: 150W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 105nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): 1.35µs
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac?-5 (3 leads)
- Supplier Device Package: ISOPLUS i4-PAC?
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封裝: i4-Pac?-5 (3 leads) |
庫存3,712 |
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IXYS |
IGBT 1600V 5.7A 68W TO220AB
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1600V
- Current - Collector (Ic) (Max): 5.7A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 7.2V @ 15V, 3A
- Power - Max: 68W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 26nC
- Td (on/off) @ 25°C: -
- Test Condition: 960V, 3A, 47 Ohm, 10V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-247AD
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封裝: TO-220-3 |
庫存4,336 |
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IXYS |
IGBT 600V 60A 220W TO220AB
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 60A
- Current - Collector Pulsed (Icm): 150A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
- Power - Max: 220W
- Switching Energy: 270µJ (on), 90µJ (off)
- Input Type: Standard
- Gate Charge: 38nC
- Td (on/off) @ 25°C: 16ns/42ns
- Test Condition: 300V, 20A, 5 Ohm, 15V
- Reverse Recovery Time (trr): 60ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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封裝: TO-220-3 |
庫存3,712 |
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IXYS |
IGBT 300V 170A 330W TO3P
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 300V
- Current - Collector (Ic) (Max): 170A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 85A
- Power - Max: 330W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 143nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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封裝: TO-3P-3, SC-65-3 |
庫存4,080 |
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IXYS |
IGBT XPT 1200V 105A SOT-227B
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 105A
- Power - Max: 500W
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
- Current - Collector Cutoff (Max): 25µA
- Input Capacitance (Cies) @ Vce: 4.1nF @ 25V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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封裝: SOT-227-4, miniBLOC |
庫存5,712 |
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IXYS |
MOSFET N-CH TO268
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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封裝: - |
庫存4,496 |
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IXYS |
MOSFET N-CH 75V 160A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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封裝: TO-247-3 |
庫存2,848 |
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IXYS |
MOSFET N-CH 1000V 10A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 5320pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 695W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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封裝: TO-247-3 |
庫存4,352 |
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IXYS |
MOSFET N-CH 250V 110A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 157nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 694W (Tc)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 55A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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封裝: TO-247-3 |
庫存4,544 |
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IXYS |
MOSFET N-CH 600V 72A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 72A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1040W (Tc)
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 41A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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封裝: SOT-227-4, miniBLOC |
庫存7,008 |
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IXYS |
THYRISTOR PHASE 1600V TO-247AD
- Voltage - Off State: 1600V
- Voltage - Gate Trigger (Vgt) (Max): 1V
- Current - Gate Trigger (Igt) (Max): 65mA
- Voltage - On State (Vtm) (Max): 2.1V
- Current - On State (It (AV)) (Max): 19A
- Current - On State (It (RMS)) (Max): 30A
- Current - Hold (Ih) (Max): 100mA
- Current - Off State (Max): 2mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 200A, 215A
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Through Hole
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-247AD
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封裝: TO-3P-3 Full Pack |
庫存6,400 |
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IXYS |
SCR THYRISTOR CA 1200V WC-500
- Structure: Common Cathode - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 545A
- Current - On State (It (RMS)) (Max): 1294A
- Voltage - Gate Trigger (Vgt) (Max): 3V
- Current - Gate Trigger (Igt) (Max): 300mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
- Current - Hold (Ih) (Max): 1A
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: WC-500
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封裝: WC-500 |
庫存3,520 |
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IXYS |
SCR MOD 1800V Y2-DCB
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1800V
- Current - On State (It (AV)) (Max): 250A
- Current - On State (It (RMS)) (Max): 400A
- Voltage - Gate Trigger (Vgt) (Max): 2V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 8500A, 9000A
- Current - Hold (Ih) (Max): 150mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
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封裝: Module |
庫存7,280 |
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IXYS |
MOD THYRISTOR DUAL 1200V Y4-M6
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 130A
- Current - On State (It (RMS)) (Max): 300A
- Voltage - Gate Trigger (Vgt) (Max): 2.5V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5080A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y4-M6
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封裝: Y4-M6 |
庫存5,088 |
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IXYS |
MOD THYRISTOR 1600V 105A ECOPAC2
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 105A
- Current - On State (It (RMS)) (Max): 180A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC2
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封裝: ECO-PAC2 |
庫存7,424 |
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IXYS |
MOD THYRISTOR DUAL 16KV TO-240
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 85A
- Current - On State (It (RMS)) (Max): 135A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 95mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1620A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
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封裝: TO-240AA |
庫存6,016 |
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IXYS |
DIODE MODULE 600V 514A Y4-M6
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 514A
- Voltage - Forward (Vf) (Max) @ If: 1.52V @ 520A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 300ns
- Current - Reverse Leakage @ Vr: 24mA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: Y4-M6
- Supplier Device Package: Y4-M6
- Operating Temperature - Junction: -40°C ~ 150°C
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封裝: Y4-M6 |
庫存4,800 |
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IXYS |
DIODE GEN PURP 600V 37A TO247AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 37A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 37A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -40°C ~ 150°C
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封裝: TO-247-2 |
庫存33,912 |
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IXYS |
DIODE ARRAY GP 600V 10A TO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 2.1V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 60µA @ 600V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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封裝: TO-220-3 |
庫存10,248 |
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IXYS |
DIODE MODULE 100V 40A SOT227B
- Diode Configuration: 2 Independent
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io) (per Diode): 40A
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 40A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 100V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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封裝: SOT-227-4, miniBLOC |
庫存7,040 |
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IXYS |
IC GATE DRIVER 4A 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 30 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 9ns, 8ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存7,360 |
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IXYS |
IC CURRENT REGULATOR TO220AB
- Function: Current Regulator
- Sensing Method: -
- Accuracy: -
- Voltage - Input: -
- Current - Output: 20mA
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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封裝: TO-220-3 |
庫存2,288 |
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IXYS |
SCR 1.2KV 35MA TO220
- Voltage - Off State: 1.2 kV
- Voltage - Gate Trigger (Vgt) (Max): 1.3 V
- Current - Gate Trigger (Igt) (Max): 20 mA
- Voltage - On State (Vtm) (Max): 1.4 V
- Current - On State (It (AV)) (Max): 20 A
- Current - On State (It (RMS)) (Max): 35 mA
- Current - Hold (Ih) (Max): 25 mA
- Current - Off State (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 130A
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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封裝: - |
Request a Quote |
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IXYS |
MOSFET N-CH 300V 26A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Rds On (Max) @ Id, Vgs: 66mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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封裝: - |
庫存1,563 |
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IXYS |
MOSFET P-CH 150V 10A TO263
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 83W (Ta)
- Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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封裝: - |
Request a Quote |
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IXYS |
TRIAC 1.6KV 66A TO247
- Triac Type: Standard
- Voltage - Off State: 1.6 kV
- Current - On State (It (RMS)) (Max): 66 A
- Voltage - Gate Trigger (Vgt) (Max): 1.3 V
- Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
- Current - Gate Trigger (Igt) (Max): 60 mA
- Current - Hold (Ih) (Max): 60 mA
- Configuration: Single
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXTH)
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封裝: - |
Request a Quote |
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