頁 298 - Infineon Technologies 產品 | 黑森爾電子
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Infineon Technologies 產品

記錄 16,988
頁  298/567
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IRG6I320UPBF
Infineon Technologies

IGBT 330V 24A 39W TO220ABFP

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 330V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 24A
  • Power - Max: 39W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 46nC
  • Td (on/off) @ 25°C: 24ns/89ns
  • Test Condition: 196V, 12A, 10 Ohm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存7,008
IRFS7440PBF
Infineon Technologies

MOSFET N CH 40V 120A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4730pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存3,744
AUIRFS4010
Infineon Technologies

MOSFET N-CH 100V 180A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9575pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 106A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存5,168
AUIRLR3705Z
Infineon Technologies

MOSFET N-CH 55V 42A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 42A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存5,584
hot IRL2505STRRPBF
Infineon Technologies

MOSFET N-CH 55V 104A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 54A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存32,400
BSP317PL6327HTSA1
Infineon Technologies

MOSFET P-CH 250V 0.43A SOT-223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 370µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 262pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 430mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
封裝: TO-261-4, TO-261AA
庫存5,712
hot SI3443DV
Infineon Technologies

MOSFET P-CH 20V 4.4A 6-TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1079pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 4.4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro6?(TSOP-6)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封裝: SOT-23-6 Thin, TSOT-23-6
庫存776,412
IPI70P04P409AKSA1
Infineon Technologies

MOSFET N-CH TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 120µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4810pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 70A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3-1
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA
庫存2,608
hot IRLR2705TRLPBF
Infineon Technologies

MOSFET N-CH 55V 28A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存60,000
IPU60R2K1CEAKMA1
Infineon Technologies

CONSUMER

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
庫存2,528
hot BSZ060NE2LS
Infineon Technologies

MOSFET N-CH 25V 12A TSDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8-FL
  • Package / Case: 8-PowerTDFN
封裝: 8-PowerTDFN
庫存327,732
hot IRFZ34NPBF
Infineon Technologies

MOSFET N-CH 55V 29A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存283,116
IPP020N08N5AKSA1
Infineon Technologies

MOSFET N-CH TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 280µA
  • Gate Charge (Qg) (Max) @ Vgs: 223nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 16900pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存10,404
hot IRFBA90N20DPBF
Infineon Technologies

MOSFET N-CH 200V 98A SUPER-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6080pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 650W (Tc)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 59A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: SUPER-220? (TO-273AA)
  • Package / Case: Super-220?-3 (Straight Leads)
封裝: Super-220?-3 (Straight Leads)
庫存8,952
hot IRFR3607PBF
Infineon Technologies

MOSFET N-CH 75V 80A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3070pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 46A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存6,912
hot IRF2804PBF
Infineon Technologies

MOSFET N-CH 40V 75A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存9,696
BDP948H6327XTSA1
Infineon Technologies

TRANS PNP 45V 3A SOT223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
  • Power - Max: 5W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-4
封裝: TO-261-4, TO-261AA
庫存7,616
BCR 151T E6327
Infineon Technologies

TRANS PREBIAS PNP 250MW SC75

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 100k
  • Resistor - Emitter Base (R2) (Ohms): 100k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 120MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: PG-SC-75
封裝: SC-75, SOT-416
庫存3,648
BAR6503WE6327HTSA1
Infineon Technologies

DIODE RF SGL 30V 100MA SOD-323

  • Diode Type: PIN - Single
  • Voltage - Peak Reverse (Max): 30V
  • Current - Max: 100mA
  • Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
  • Resistance @ If, F: 900 mOhm @ 10mA, 100MHz
  • Power Dissipation (Max): 250mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: PG-SOD323-2
封裝: SC-76, SOD-323
庫存4,912
TLE42754EXUMA1
Infineon Technologies

IC REG LINEAR 5V 450MA 14SSOP

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 42V
  • Voltage - Output (Min/Fixed): 5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.5V @ 300mA
  • Current - Output: 450mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 200µA ~ 25mA
  • PSRR: 60dB (100Hz)
  • Control Features: Reset
  • Protection Features: Over Current, Over Temperature, Reverse Polarity
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: PG-SSOP-14-EP
封裝: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
庫存2,112
hot TLE4264-2G
Infineon Technologies

IC REG LINEAR 5V 150MA SOT223-4

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 45V
  • Voltage - Output (Min/Fixed): 5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.5V @ 100mA
  • Current - Output: 150mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 60µA ~ 4mA
  • PSRR: 68dB (100Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature, Short Circuit
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223-4
封裝: TO-261-4, TO-261AA
庫存1,376,028
AUIPS1021S
Infineon Technologies

IC SW IPS 1CH LOW SIDE D2PAK

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 36V (Max)
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 4.8A
  • Rds On (Typ): 20 mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Current Limiting (Fixed), Over Temperature
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存4,672
BTS51202EKAXUMA1
Infineon Technologies

IC PWR SW HI-SIDE 2CH DSO14-40

  • Switch Type: General Purpose
  • Number of Outputs: 2
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 5 V ~ 28 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 2A
  • Rds On (Typ): 120 mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: PG-DSO-14-40-EP
封裝: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
庫存5,424
IRS2607DSPBF
Infineon Technologies

IC DVR HI/LOW SIDE 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 150ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存3,600
IRSM515-065DA
Infineon Technologies

IC MOTOR DRIVER 500V 23DIP

  • Output Configuration: Half Bridge (3)
  • Applications: AC Motors
  • Interface: Logic
  • Load Type: Inductive
  • Technology: UMOS
  • Rds On (Typ): 1 Ohm
  • Current - Output / Channel: 2.6A
  • Current - Peak Output: 15A
  • Voltage - Supply: 13.5 V ~ 16.5 V
  • Voltage - Load: 400V (Max)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Features: Bootstrap Circuit
  • Fault Protection: UVLO
  • Mounting Type: Through Hole
  • Package / Case: 23-DIP Module
  • Supplier Device Package: 23-DIP
封裝: 23-DIP Module
庫存7,104
PEF 24901 H V2.2
Infineon Technologies

IC NETWORK TERMINATOR MQFP-64

  • Function: Echo Cancellation
  • Interface: ISDN
  • Number of Circuits: 4
  • Voltage - Supply: 3 V ~ 3.6 V
  • Current - Supply: -
  • Power (Watts): -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 64-QFP
  • Supplier Device Package: P-64-MQFP
封裝: 64-QFP
庫存7,824
XMC4500F144K1024ACXQMA1
Infineon Technologies

IC MCU 32BIT 1MB FLASH 144LQFP

  • Core Processor: ARM? Cortex?-M4
  • Core Size: 32-Bit
  • Speed: 120MHz
  • Connectivity: CAN, EBI/EMI, Ethernet, I2C, LIN, SPI, UART, USB
  • Peripherals: DMA, I2S, LED, POR, PWM, WDT
  • Number of I/O: 91
  • Program Memory Size: 1MB (1M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 160K x 8
  • Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
  • Data Converters: A/D 32x12b, D/A 2x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 144-LQFP Exposed Pad
  • Supplier Device Package: 144-LQFP (20x20)
封裝: 144-LQFP Exposed Pad
庫存2,192
BGA 748N16 E6327
Infineon Technologies

IC AMP MMIC QUAD-BAND LN TSNP-16

  • Frequency: 800MHz, 900MHz, 1.9GHz, 2.1GHz
  • P1dB: 1dBm (1.3mW)
  • Gain: 16.8dB
  • Noise Figure: 1.4dB
  • RF Type: UMTS
  • Voltage - Supply: 2.6 V ~ 3 V
  • Current - Supply: 5.3mA
  • Test Frequency: 2.14GHz
  • Package / Case: 16-XFQFN Exposed Pad
  • Supplier Device Package: TSNP-16-1
封裝: 16-XFQFN Exposed Pad
庫存8,550
SLB9655TT12FW432XUMA2
Infineon Technologies

IC SECURITY TPM I2C 28TSSOP

  • Applications: -
  • Core Processor: -
  • Program Memory Type: -
  • Controller Series: -
  • RAM Size: -
  • Interface: -
  • Number of I/O: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存5,424
BTS500851TMBAKSA1
Infineon Technologies

IC SWITCH PWR HISIDE TO220-7

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 5 V ~ 58 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 38A
  • Rds On (Typ): 7.2 mOhm
  • Input Type: Non-Inverting
  • Features: Auto Restart
  • Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-220-7 (Formed Leads)
  • Supplier Device Package: P-TO220-7-11
封裝: TO-220-7 (Formed Leads)
庫存17,988