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Infineon Technologies |
IGBT 600V 12A 77W D2PAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 12A
- Current - Collector Pulsed (Icm): 18A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
- Power - Max: 77W
- Switching Energy: 56µJ (on), 122µJ (off)
- Input Type: Standard
- Gate Charge: 19.5nC
- Td (on/off) @ 25°C: 27ns/75ns
- Test Condition: 400V, 6A, 47 Ohm, 15V
- Reverse Recovery Time (trr): 74ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存30,000 |
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Infineon Technologies |
IGBT CHIP WAFER
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 35A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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封裝: Die |
庫存5,968 |
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Infineon Technologies |
MOSFET N-CH 600V 20.7A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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封裝: TO-262-3 Long Leads, I2Pak, TO-262AA |
庫存2,672 |
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Infineon Technologies |
MOSFET N-CH 85V 95A TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 85V
- Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6690pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 95A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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封裝: TO-262-3 Long Leads, I2Pak, TO-262AA |
庫存3,808 |
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Infineon Technologies |
MOSFET N-CH 55V 100A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 230µA
- Gate Charge (Qg) (Max) @ Vgs: 550nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 26240pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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封裝: TO-220-3 |
庫存6,612 |
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Infineon Technologies |
MOSFET N-CH 60V 100A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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封裝: TO-220-3 |
庫存12,420 |
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Infineon Technologies |
MOSFET N-CH 30V 10A 8DSO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta)
- Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-DSO-8
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存9,132 |
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Infineon Technologies |
MOSFET P-CH 12V 9.5A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 600mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 74nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存5,472 |
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Infineon Technologies |
MOSFET N-CH 650V TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 590µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 400V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 34W (Tc)
- Rds On (Max) @ Id, Vgs: 95 mOhm @ 11.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
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封裝: TO-220-3 Full Pack |
庫存5,984 |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 188W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存717,048 |
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Infineon Technologies |
MOSFET N-CH 650V 11A TO-263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 996pF @ 400V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Rds On (Max) @ Id, Vgs: 225 mOhm @ 4.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存6,896 |
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Infineon Technologies |
MOSFET N-CH 100V 1.7A SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 218µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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封裝: TO-261-4, TO-261AA |
庫存2,208 |
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Infineon Technologies |
MOSFET N-CH 60V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2810pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 51A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存33,906 |
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Infineon Technologies |
MOSFET N/P-CH 100V 8SOIC
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 2.1A, 1.5A
- Rds On (Max) @ Id, Vgs: 210 mOhm @ 2.1A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存6,416 |
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Infineon Technologies |
MOSFET 2N-CH 20V 6.6A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.6A
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存1,108,992 |
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Infineon Technologies |
DIODE SCHOTTKY RF SERIES SOT-323
- Diode Type: Schottky - 1 Pair Series Connection
- Voltage - Peak Reverse (Max): 8V
- Current - Max: 130mA
- Capacitance @ Vr, F: 1pF @ 0V, 1MHz
- Resistance @ If, F: 10 Ohm @ 5mA, 10kHz
- Power Dissipation (Max): 150mW
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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封裝: SC-70, SOT-323 |
庫存7,920 |
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Infineon Technologies |
IC REG LINEAR 3.3V 1A SOT223-4
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 15V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 1.25V @ 1A
- Current - Output: 1A
- Current - Quiescent (Iq): -
- Current - Supply (Max): 10mA
- PSRR: 75dB (120Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature
- Operating Temperature: 0°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
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封裝: TO-261-4, TO-261AA |
庫存4,368 |
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Infineon Technologies |
IC DRIVER MOSFET/IGBT 44-PLCC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 12 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 200mA, 350mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 125ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 44-LCC (J-Lead), 32 Leads
- Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
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封裝: 44-LCC (J-Lead), 32 Leads |
庫存7,520 |
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Infineon Technologies |
IC MOSFET DVR HI/LO SIDE 14-DIP
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 3.3 V ~ 20 V
- Logic Voltage - VIL, VIH: 6V, 9.5V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 25ns, 17ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: 14-DIP
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封裝: 14-DIP (0.300", 7.62mm) |
庫存97,344 |
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Infineon Technologies |
IC RCVR 4CH AIRBAG SAT 28TSSOP
- Applications: Automotive Systems
- Interface: SPI Serial
- Voltage - Supply: 3.3V, 5V
- Package / Case: 28-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: P-TSSOP-28
- Mounting Type: Surface Mount
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封裝: 28-TSSOP (0.173", 4.40mm Width) |
庫存5,184 |
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Infineon Technologies |
IC MCU 32BIT 3MB FLASH 416BGA
- Core Processor: TriCore?
- Core Size: 32-Bit
- Speed: 150MHz
- Connectivity: ASC, CAN, EBI/EMI, FlexRay, MLI, MSC, SSC
- Peripherals: DMA, POR, WDT
- Number of I/O: 221
- Program Memory Size: 3MB (3M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 64K x 8
- RAM Size: 224K x 8
- Voltage - Supply (Vcc/Vdd): 1.42 V ~ 1.58 V
- Data Converters: A/D 4x10b, 44x12b
- Oscillator Type: External
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 416-BGA
- Supplier Device Package: PG-BGA-416-10
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封裝: 416-BGA |
庫存2,240 |
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Infineon Technologies |
IC MCU 16BIT 384KB FLASH 100LQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 80MHz
- Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 76
- Program Memory Size: 384KB (384K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 34K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 16x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 100-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-100-8
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封裝: 100-LQFP Exposed Pad |
庫存5,408 |
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Infineon Technologies |
IC MCU 8BIT 64KB FLASH 64LQFP
- Core Processor: XC800
- Core Size: 8-Bit
- Speed: 27MHz
- Connectivity: LIN, SSI, UART/USART
- Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
- Number of I/O: 40
- Program Memory Size: 64KB (64K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 3.25K x 8
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Data Converters: A/D 8x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 64-LQFP
- Supplier Device Package: 64-LQFP (10x10)
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封裝: 64-LQFP |
庫存6,592 |
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Infineon Technologies |
IC MCU 32BIT 16KB FLASH 24VQFN
- Core Processor: ARM? Cortex?-M0
- Core Size: 32-Bit
- Speed: 32MHz
- Connectivity: I2C, LIN, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
- Number of I/O: 18
- Program Memory Size: 16KB (16K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
- Data Converters: A/D 13x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 24-VFQFN Exposed Pad
- Supplier Device Package: PG-VQFN-24-19
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封裝: 24-VFQFN Exposed Pad |
庫存2,528 |
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Infineon Technologies |
TRANSMITTER ASK/FSK P-TSSOP-10
- Frequency: 345MHz
- Applications: Alarm Systems, Communication Systems
- Modulation or Protocol: ASK, FSK
- Data Rate (Max): 20 kbps
- Power - Output: 5dBm
- Current - Transmitting: 7mA
- Data Interface: PCB, Surface Mount
- Antenna Connector: PCB, Surface Mount
- Memory Size: -
- Features: -
- Voltage - Supply: 2.1 V ~ 4 V
- Operating Temperature: -25°C ~ 85°C
- Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
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封裝: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) |
庫存8,028 |
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Infineon Technologies |
IC SWITCH RF 14TSNP
- Frequency - Lower: 100MHz
- Frequency - Upper: 2.7GHz
- Isolation @ Frequency: 33dB @ 2GHz
- Insertion Loss @ Frequency: 0.45dB @ 2GHz
- IIP3: -
- Topology: -
- Circuit: SP6T
- P1dB: -
- Features: -
- Impedance: 50 Ohm
- Operating Temperature: -30°C ~ 85°C
- Voltage - Supply: 2.5 V ~ 5.5 V
- RF Type: WCDMA
- Package / Case: 14-WFQFN Exposed Pad
- Supplier Device Package: PG-TSNP-14-3
|
封裝: 14-WFQFN Exposed Pad |
庫存4,230 |
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Infineon Technologies |
IC AMP MMIC RF FM RADIO TSNP-7
- Frequency: 10MHz ~ 1GHz
- P1dB: -6dBm
- Gain: 13.5dB
- Noise Figure: 1.2dB
- RF Type: FM
- Voltage - Supply: 3V
- Current - Supply: 2.8mA
- Test Frequency: 100MHz
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: TSNP-7-6
|
封裝: 6-XFDFN Exposed Pad |
庫存4,320 |
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Infineon Technologies |
IC REG LINEAR 5V 400MA 14DSO
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 40V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.6V @ 400mA
- Current - Output: 400mA
- Current - Quiescent (Iq): 4mA
- Current - Supply (Max): 80mA
- PSRR: 54dB (100Hz)
- Control Features: Inhibit, Reset
- Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Short Circuit, Transient Voltage
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-14
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封裝: 14-SOIC (0.154", 3.90mm Width) |
庫存21,930 |
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Infineon Technologies |
LITIX
- Type: Linear
- Topology: -
- Internal Switch(s): Yes
- Number of Outputs: 1
- Voltage - Supply (Min): 5.5V
- Voltage - Supply (Max): 40V
- Voltage - Output: 40V
- Current - Output / Channel: 180mA
- Frequency: -
- Dimming: PWM
- Applications: Automotive
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-TSDSO-14
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封裝: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad |
庫存24,564 |
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Infineon Technologies |
LITIX
- Type: Linear
- Topology: -
- Internal Switch(s): Yes
- Number of Outputs: 1
- Voltage - Supply (Min): 5.5V
- Voltage - Supply (Max): 40V
- Voltage - Output: 70V
- Current - Output / Channel: 180mA
- Frequency: -
- Dimming: PWM
- Applications: Automotive
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-TSDSO-14
|
封裝: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad |
庫存22,596 |
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