頁 1498 - 記憶體 | 積體電路 (IC) | 黑森爾電子
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記錄 46,059
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圖片
零件編號
製造商
描述
封裝
庫存
數量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
AT45DQ321-MHD-Y
Adesto Technologies

IC FLASH 32MBIT 85MHZ 8UDFN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 32Mb (528 Bytes x 8192 pages)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 8µs, 4ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UDFN Exposed Pad
  • Supplier Device Package: 8-UDFN (5x6)
封裝: 8-UDFN Exposed Pad
庫存2,608
FLASH
FLASH
32Mb (528 Bytes x 8192 pages)
SPI
104MHz
8µs, 4ms
-
2.5 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-UDFN Exposed Pad
8-UDFN (5x6)
hot N25Q008A11ESC40G
Micron Technology Inc.

IC FLASH 1MX8 SLC SOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: 8ms, 5ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存9,984
FLASH
FLASH - NOR
8Mb (1M x 8)
SPI
108MHz
8ms, 5ms
-
1.7 V ~ 2 V
-40°C ~ 85°C (TA)
-
-
-
MT29C4G48MAZAPAKD-5 IT TR
Micron Technology Inc.

IC FLASH/LPDRAM 6GBIT 137TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, Mobile LPDRAM
  • Memory Size: 4Gb (256M x 16)(NAND), 2Gb (64M x 32)(LPDRAM)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 137-TFBGA
  • Supplier Device Package: 137-TFBGA (10.5x13)
封裝: 137-TFBGA
庫存5,344
FLASH, RAM
FLASH - NAND, Mobile LPDRAM
4Gb (256M x 16)(NAND), 2Gb (64M x 32)(LPDRAM)
Parallel
200MHz
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
137-TFBGA
137-TFBGA (10.5x13)
M25PX64-VME6TG TR
Micron Technology Inc.

IC FLASH 64MBIT 75MHZ 8VFDFPN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (8M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 75MHz
  • Write Cycle Time - Word, Page: 15ms, 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-VDFPN (MLP8) (8x6)
封裝: 8-VDFN Exposed Pad
庫存7,584
FLASH
FLASH - NOR
64Mb (8M x 8)
SPI
75MHz
15ms, 5ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-VDFN Exposed Pad
8-VDFPN (MLP8) (8x6)
CY7C1514V18-250BZI
Cypress Semiconductor Corp

IC SRAM 72MBIT 250MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II
  • Memory Size: 72Mb (2M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 250MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (15x17)
封裝: 165-LBGA
庫存7,936
SRAM
SRAM - Synchronous, QDR II
72Mb (2M x 36)
Parallel
250MHz
-
-
1.7 V ~ 1.9 V
-40°C ~ 85°C (TA)
Surface Mount
165-LBGA
165-FBGA (15x17)
M50FLW080AK5TG TR
Micron Technology Inc.

IC FLASH 8MBIT 33MHZ 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 33MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 250ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC (11.35x13.89)
封裝: 32-LCC (J-Lead)
庫存3,488
FLASH
FLASH - NOR
8Mb (1M x 8)
Parallel
33MHz
-
250ns
3 V ~ 3.6 V
-20°C ~ 85°C (TA)
Surface Mount
32-LCC (J-Lead)
32-PLCC (11.35x13.89)
IS62WV25616BLL-55TI-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 55NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
封裝: 44-TSOP (0.400", 10.16mm Width)
庫存2,224
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
55ns
55ns
2.5 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
PCF8598C-2P/02,112
NXP

IC EEPROM 8KBIT 100KHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 100kHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 6.0 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
封裝: 8-DIP (0.300", 7.62mm)
庫存7,440
EEPROM
EEPROM
8Kb (1K x 8)
I2C
100kHz
-
-
2.5 V ~ 6.0 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
MT29F2G08AACWP:C TR
Micron Technology Inc.

IC FLASH 2GBIT 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
封裝: 48-TFSOP (0.724", 18.40mm Width)
庫存2,480
FLASH
FLASH - NAND
2Gb (256M x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
hot MT47H64M16BT-37E:A
Micron Technology Inc.

IC SDRAM 1GBIT 266MHZ 92FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 1Gb (64M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 267MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 400ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 92-VFBGA
  • Supplier Device Package: 92-FBGA (11x19)
封裝: 92-VFBGA
庫存6,240
DRAM
SDRAM - DDR2
1Gb (64M x 16)
Parallel
267MHz
15ns
400ps
1.7 V ~ 1.9 V
0°C ~ 85°C (TC)
Surface Mount
92-VFBGA
92-FBGA (11x19)
70V26S55J8
IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 55NS 84PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 256Kb (16K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 84-LCC (J-Lead)
  • Supplier Device Package: 84-PLCC (29.21x29.21)
封裝: 84-LCC (J-Lead)
庫存6,736
SRAM
SRAM - Dual Port, Asynchronous
256Kb (16K x 16)
Parallel
-
55ns
55ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
84-LCC (J-Lead)
84-PLCC (29.21x29.21)
MT29F32G08CBACAL73A3WC1P
Micron Technology Inc.

IC FLASH 32GBIT WAFER

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 32Gb (4G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: Die
庫存5,040
FLASH
FLASH - NAND
32Gb (4G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
Die
Die
71V546S133PFGI
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 133MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4.2ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
封裝: 100-LQFP
庫存5,184
SRAM
SRAM - Synchronous ZBT
4.5Mb (128K x 36)
Parallel
133MHz
-
4.2ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
CY7C1021DV33-10ZSXA
Cypress Semiconductor Corp

IC SRAM 1MBIT 10NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
封裝: 44-TSOP (0.400", 10.16mm Width)
庫存5,840
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
10ns
10ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
71V3559S75PFG
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 7.5NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 4.5Mb (256K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
封裝: 100-LQFP
庫存5,280
SRAM
SRAM - Synchronous ZBT
4.5Mb (256K x 18)
Parallel
-
-
7.5ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
AS6C6264-55STCN
Alliance Memory, Inc.

IC SRAM 64KBIT 55NS 28STSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.465", 11.80mm Width)
  • Supplier Device Package: 28-sTSOP
封裝: 28-TSSOP (0.465", 11.80mm Width)
庫存5,392
SRAM
SRAM - Asynchronous
64Kb (8K x 8)
Parallel
-
55ns
55ns
2.7 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
28-TSSOP (0.465", 11.80mm Width)
28-sTSOP
IS61LV6416-8TL-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 1MBIT 8NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 8ns
  • Access Time: 8ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
封裝: 44-TSOP (0.400", 10.16mm Width)
庫存4,848
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
8ns
8ns
3.135 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
IS61WV6416BLL-12BLI
ISSI, Integrated Silicon Solution Inc

IC SRAM 1MBIT 12NS 48MINIBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-miniBGA (6x8)
封裝: 48-TFBGA
庫存6,816
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
12ns
12ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-miniBGA (6x8)
SST39LF802C-55-4C-B3KE
Microchip Technology

IC FLASH 8MBIT 55NS 48TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 8Mb (512K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10µs
  • Access Time: 55ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA (6x8)
封裝: 48-TFBGA
庫存5,280
FLASH
FLASH
8Mb (512K x 16)
Parallel
-
10µs
55ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFBGA
48-TFBGA (6x8)
S25FL116K0XNFV010
Cypress Semiconductor Corp

IC FLASH 16MBIT 108MHZ 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (5x6)
封裝: 8-WDFN Exposed Pad
庫存3,120
FLASH
FLASH - NOR
16Mb (2M x 8)
SPI - Quad I/O
108MHz
3ms
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (5x6)
CY7C09349AV-12AXC
Cypress Semiconductor Corp

IC SRAM 72KBIT 12NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 72Kb (4K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 50MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 12ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
封裝: 100-LQFP
庫存5,424
SRAM
SRAM - Dual Port, Synchronous
72Kb (4K x 18)
Parallel
50MHz
-
12ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
BR24G04FVM-3GTTR
Rohm Semiconductor

IC EEPROM 4KBIT 400KHZ 8MSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.6 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
  • Supplier Device Package: 8-MSOP
封裝: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
庫存2,016
EEPROM
EEPROM
4Kb (512 x 8)
I2C
400kHz
5ms
-
1.6 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
8-MSOP
hot AT24C16D-SSHM-T
Microchip Technology

IC EEPROM 16KBIT 1MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 450ns
  • Voltage - Supply: 1.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存13,608
EEPROM
EEPROM
16Kb (2K x 8)
I2C
1MHz
5ms
450ns
1.7 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
AT27LV256A-90JU-T
Microchip Technology

90NS, PLCC, IND TEMP, GREEN

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 90ns
  • Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
封裝: 32-LCC (J-Lead)
庫存6,832
EPROM
EPROM - OTP
256Kb (32K x 8)
Parallel
-
-
90ns
3 V ~ 3.6 V, 4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
IS25LQ016B-JBLE
ISSI, Integrated Silicon Solution Inc

IC FLASH 16MBIT 104MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 1ms
  • Access Time: -
  • Voltage - Supply: 2.3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.209", 5.30mm Width)
庫存16,782
FLASH
FLASH - NOR
16Mb (2M x 8)
SPI - Quad I/O
104MHz
1ms
-
2.3 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
AS4C4M16SA-7TCN
Alliance Memory, Inc.

IC SDRAM 64MBIT 143MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mb (4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 143MHz
  • Write Cycle Time - Word, Page: 2ns
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
封裝: 54-TSOP (0.400", 10.16mm Width)
庫存17,424
DRAM
SDRAM
64Mb (4M x 16)
Parallel
143MHz
2ns
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
IS43R16320E-5TLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 512M PARALLEL 200MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 700ps
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 66-TSSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 66-TSOP II
封裝: 66-TSSOP (0.400", 10.16mm Width)
庫存2,816
DRAM
SDRAM - DDR
512Mb (32M x 16)
Parallel
200MHz
15ns
700ps
2.3 V ~ 2.7 V
-40°C ~ 85°C (TA)
Surface Mount
66-TSSOP (0.400", 10.16mm Width)
66-TSOP II
S27KL0641DABHB033
Cypress Semiconductor Corp

IC 64 MB FLASH MEMORY

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存4,208
-
-
-
-
-
-
-
-
-
-
-
-
MT53D1024M32D4NQ-046 AAT ES :D TR
Micron Technology Inc.

IC DRAM 32G 2133MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 32Gb (1G x 32)
  • Memory Interface: -
  • Clock Frequency: 2133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存2,384
DRAM
SDRAM - Mobile LPDDR4
32Gb (1G x 32)
-
2133MHz
-
-
1.1V
-40°C ~ 105°C (TA)
-
-
-
W632GG6MB-07
Winbond Electronics

IC SDRAM 2G DDR3 IND 96WBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-VFBGA
  • Supplier Device Package: 96-VFBGA (7.5x13)
封裝: 96-VFBGA
庫存7,520
DRAM
SDRAM - DDR3
2Gb (128M x 16)
Parallel
-
-
-
1.425V ~ 1.575V
0°C ~ 95°C (TC)
Surface Mount
96-VFBGA
96-VFBGA (7.5x13)