頁 173 - 記憶體 | 積體電路 (IC)

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SST26VF016BA-104I/MF	Microchip Technology	IC FLASH 16MBIT 104MHZ 8WDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16Mb (2M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: 1.5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WDFN (5x6)	封裝: 8-WDFN Exposed Pad	庫存5,936	FLASH	FLASH	16Mb (2M x 8)	SPI - Quad I/O	104MHz	1.5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WDFN (5x6)
MT29F16G08CBACBWP-12:C	Micron Technology Inc.	IC FLASH 16GBIT 83MHZ 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 16Gb (2G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封裝: 48-TFSOP (0.724", 18.40mm Width)	庫存6,208	FLASH	FLASH - NAND	16Gb (2G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
CAT28C16AXI12	ON Semiconductor	IC EEPROM 16KBIT 120NS 24SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 5ms Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-SOIC (0.295", 7.50mm Width) Supplier Device Package: 24-SOIC	封裝: 24-SOIC (0.295", 7.50mm Width)	庫存2,928	EEPROM	EEPROM	16Kb (2K x 8)	Parallel	-	5ms	120ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	24-SOIC (0.295", 7.50mm Width)	24-SOIC
IS42S16100E-7BL-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 16MBIT 143MHZ 60TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TFBGA (6.4x10.1)	封裝: 60-TFBGA	庫存2,848	DRAM	SDRAM	16Mb (1M x 16)	Parallel	143MHz	-	5.5ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	60-TFBGA	60-TFBGA (6.4x10.1)
M29W400DT55N6	Micron Technology Inc.	IC FLASH 4MBIT 55NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mb (512K x 8, 256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	封裝: 48-TFSOP (0.724", 18.40mm Width)	庫存13,896	FLASH	FLASH - NOR	4Mb (512K x 8, 256K x 16)	Parallel	-	55ns	55ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
IS41LV16105B-50TL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 16MBIT 50NS 44TSOP Memory Type: Volatile Memory Format: DRAM Technology: DRAM - FP Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 25ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封裝: 44-TSOP (0.400", 10.16mm Width)	庫存4,096	DRAM	DRAM - FP	16Mb (1M x 16)	Parallel	-	-	25ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
AT28HC256E-90JC	Microchip Technology	IC EEPROM 256KBIT 90NS 32PLCC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	封裝: 32-LCC (J-Lead)	庫存6,272	EEPROM	EEPROM	256Kb (32K x 8)	Parallel	-	10ms	90ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
AT27C010-12PI	Microchip Technology	IC OTP 1MBIT 120NS 32DIP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Through Hole Package / Case: 32-DIP (0.600", 15.24mm) Supplier Device Package: 32-DIP	封裝: 32-DIP (0.600", 15.24mm)	庫存3,344	EPROM	EPROM - OTP	1Mb (128K x 8)	Parallel	-	-	120ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Through Hole	32-DIP (0.600", 15.24mm)	32-DIP
70V631S12BCI8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 12NS 256CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 256-LBGA Supplier Device Package: 256-CABGA (17x17)	封裝: 256-LBGA	庫存6,304	SRAM	SRAM - Dual Port, Asynchronous	4.5Mb (256K x 18)	Parallel	-	12ns	12ns	3.15 V ~ 3.45 V	-40°C ~ 85°C (TA)	Surface Mount	256-LBGA	256-CABGA (17x17)
709289L9PFI	IDT, Integrated Device Technology Inc	IC SRAM 1MBIT 9NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 9ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: 100-LQFP	庫存6,208	SRAM	SRAM - Dual Port, Synchronous	1Mb (64K x 16)	Parallel	-	-	9ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
AS4C32M16SA-7TINTR	Alliance Memory, Inc.	IC SDRAM 512MBIT 143MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: 2ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封裝: 54-TSOP (0.400", 10.16mm Width)	庫存6,096	DRAM	SDRAM	512Mb (32M x 16)	Parallel	143MHz	2ns	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
IS61NLP25618A-200B3LI	ISSI, Integrated Silicon Solution Inc	IC SRAM 4.5MBIT 200MHZ 165BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TFBGA Supplier Device Package: 165-BGA (13x15)	封裝: 165-TFBGA	庫存3,088	SRAM	SRAM - Synchronous	4.5Mb (256K x 18)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	165-TFBGA	165-BGA (13x15)
24LC024/P	Microchip Technology	IC EEPROM 2KBIT 400KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封裝: 8-DIP (0.300", 7.62mm)	庫存6,208	EEPROM	EEPROM	2Kb (256 x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
11LC160-I/SN	Microchip Technology	IC EEPROM 16KBIT 100KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: Single Wire Clock Frequency: 100kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存4,192	EEPROM	EEPROM	16Kb (2K x 8)	Single Wire	100kHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AT24C04D-SSHM-T	Microchip Technology	IC EEPROM 4KBIT 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 450ns Voltage - Supply: 1.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存1,284,000	EEPROM	EEPROM	4Kb (512 x 8)	I2C	1MHz	5ms	450ns	1.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MT29F128G08CBCEBRT-37B:E	Micron Technology Inc.	IC FLASH 128G PARALLEL 267MHZ Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: Parallel Clock Frequency: 267MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存7,184	FLASH	FLASH - NAND	128Gb (16G x 8)	Parallel	267MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
S29GL01GS12FHIV20	Cypress Semiconductor Corp	IC FLASH 1G PARALLEL 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 120ns Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (13x11)	封裝: 64-LBGA	庫存3,232	FLASH	FLASH - NOR	1Gb (64M x 16)	Parallel	-	60ns	120ns	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (13x11)
S29GL064S80DHIV20	Cypress Semiconductor Corp	IC FLASH 64M PARALLEL 64FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 80ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (9x9)	封裝: 64-LBGA	庫存4,672	FLASH	FLASH - NOR	64Mb (4M x 16)	Parallel	-	60ns	80ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (9x9)
MT25QU128ABA8E54-0SIT TR	Micron Technology Inc.	IC FLASH 128M SPI 15XFWLBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 15-XFBGA, WLCSP Supplier Device Package: 15-XFWLBGA	封裝: 15-XFBGA, WLCSP	庫存4,432	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI	133MHz	8ms, 2.8ms	-	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	15-XFBGA, WLCSP	15-XFWLBGA
AT24C02C-MAHM-E	Microchip Technology	IC EEPROM 2K I2C 1MHZ 8UDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I²C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 550ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN (2x3)	封裝: 8-UFDFN Exposed Pad	庫存2,912	EEPROM	EEPROM	2Kb (256 x 8)	I²C	1MHz	5ms	550ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-UDFN (2x3)
MT53D8DBPM-DC	Micron Technology Inc.	LPDDR4 64G 1GX64 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,040	-	-	-	-	-	-	-	-	-	-	-	-
577578-003-00	Cypress Semiconductor Corp	IC FLASH NOR 128MB 8SOIC Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存7,264	-	-	-	-	-	-	-	-	-	-	-	-
CY7C1345A-117AC	Cypress Semiconductor Corp	IC SRAM 4.5MBIT PAR 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, SDR Memory Size: 4.5Mbit Memory Interface: Parallel Clock Frequency: 117 MHz Write Cycle Time - Word, Page: - Access Time: 7.5 ns Voltage - Supply: 3.15V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: -	Request a Quote	SRAM	SRAM - Synchronous, SDR	4.5Mbit	Parallel	117 MHz	-	7.5 ns	3.15V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
W25Q64FVZPAQ	Winbond Electronics	IC FLASH 64MBIT SPI/QUAD 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 50µs, 3ms Access Time: 7 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	封裝: -	Request a Quote	FLASH	FLASH - NOR	64Mbit	SPI - Quad I/O, QPI	104 MHz	50µs, 3ms	7 ns	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
R1RW0416DGE-2LR-B1	Renesas Electronics Corporation	SRAM 4MB FAST X16 3V SOJ 12NS 0T Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	封裝: -	庫存312	SRAM	SRAM - Asynchronous	4Mbit	Parallel	-	12ns	12 ns	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	44-BSOJ (0.400", 10.16mm Width)	44-SOJ
5962-8855206UA	Renesas Electronics Corporation	IC SRAM 256KBIT PARALLEL 28CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 256Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.300", 7.62mm) Supplier Device Package: 28-CDIP	封裝: -	Request a Quote	SRAM	SRAM - Synchronous	256Kbit	Parallel	-	25ns	25 ns	4.5V ~ 5.5V	-55°C ~ 125°C (TA)	Through Hole	28-CDIP (0.300", 7.62mm)	28-CDIP
W634GU6RB09I	Winbond Electronics	4GB DDR3L 1.35V SDRAM, X16, 1066 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gbit Memory Interface: Parallel Clock Frequency: 1.067 GHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-VFBGA Supplier Device Package: 96-VFBGA (7.5x13)	封裝: -	Request a Quote	DRAM	SDRAM - DDR3L	4Gbit	Parallel	1.067 GHz	15ns	20 ns	1.283V ~ 1.45V	-40°C ~ 95°C (TC)	Surface Mount	96-VFBGA	96-VFBGA (7.5x13)
AS25F1128MQ-70WIN	Alliance Memory, Inc.	IC FLASH 128MBIT SPI/QUAD 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 150µs, 5ms Access Time: 6 ns Voltage - Supply: 1.65V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	封裝: -	庫存1,695	FLASH	FLASH - NOR	128Mbit	SPI - Quad I/O, QPI	133 MHz	150µs, 5ms	6 ns	1.65V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
CY15B102QSN-108SXIT	Infineon Technologies	IC FRAM 2MBIT SPI/QUAD 8SOIC Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 2Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 108 MHz Write Cycle Time - Word, Page: - Access Time: 7 ns Voltage - Supply: 1.8V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封裝: -	Request a Quote	FRAM	FRAM (Ferroelectric RAM)	2Mbit	SPI - Quad I/O, QPI	108 MHz	-	7 ns	1.8V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
CG7501AAT	Infineon Technologies	IC SRAM NON VOLATILE 48FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

SST26VF016BA-104I/MF

Microchip Technology

IC FLASH 16MBIT 104MHZ 8WDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16Mb (2M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 1.5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WDFN (5x6)

封裝: 8-WDFN Exposed Pad

庫存5,936

FLASH

16Mb (2M x 8)

SPI - Quad I/O

104MHz

1.5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WDFN (5x6)

MT29F16G08CBACBWP-12:C

Micron Technology Inc.

IC FLASH 16GBIT 83MHZ 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 16Gb (2G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封裝: 48-TFSOP (0.724", 18.40mm Width)

庫存6,208

FLASH

FLASH - NAND

16Gb (2G x 8)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

CAT28C16AXI12

ON Semiconductor

IC EEPROM 16KBIT 120NS 24SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 5ms
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 24-SOIC

封裝: 24-SOIC (0.295", 7.50mm Width)

庫存2,928

EEPROM

16Kb (2K x 8)

Parallel

-

5ms

120ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

24-SOIC (0.295", 7.50mm Width)

24-SOIC

IS42S16100E-7BL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 16MBIT 143MHZ 60TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (6.4x10.1)

封裝: 60-TFBGA

庫存2,848

DRAM

SDRAM

16Mb (1M x 16)

Parallel

143MHz

-

5.5ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

60-TFBGA

60-TFBGA (6.4x10.1)

M29W400DT55N6

Micron Technology Inc.

IC FLASH 4MBIT 55NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8, 256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

封裝: 48-TFSOP (0.724", 18.40mm Width)

庫存13,896

FLASH

FLASH - NOR

4Mb (512K x 8, 256K x 16)

Parallel

-

55ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

IS41LV16105B-50TL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 16MBIT 50NS 44TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM - FP
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 25ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封裝: 44-TSOP (0.400", 10.16mm Width)

庫存4,096

DRAM

DRAM - FP

16Mb (1M x 16)

Parallel

-

25ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

AT28HC256E-90JC

Microchip Technology

IC EEPROM 256KBIT 90NS 32PLCC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

封裝: 32-LCC (J-Lead)

庫存6,272

EEPROM

256Kb (32K x 8)

Parallel

-

10ms

90ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

AT27C010-12PI

Microchip Technology

IC OTP 1MBIT 120NS 32DIP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Through Hole
Package / Case: 32-DIP (0.600", 15.24mm)
Supplier Device Package: 32-DIP

封裝: 32-DIP (0.600", 15.24mm)

庫存3,344

EPROM

EPROM - OTP

1Mb (128K x 8)

Parallel

-

120ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Through Hole

32-DIP (0.600", 15.24mm)

32-DIP

70V631S12BCI8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 12NS 256CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)

封裝: 256-LBGA

庫存6,304

SRAM

SRAM - Dual Port, Asynchronous

4.5Mb (256K x 18)

Parallel

-

12ns

3.15 V ~ 3.45 V

-40°C ~ 85°C (TA)

Surface Mount

256-LBGA

256-CABGA (17x17)

709289L9PFI

IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 9NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 9ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: 100-LQFP

庫存6,208

SRAM

SRAM - Dual Port, Synchronous

1Mb (64K x 16)

Parallel

-

9ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

AS4C32M16SA-7TINTR

Alliance Memory, Inc.

IC SDRAM 512MBIT 143MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: 2ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封裝: 54-TSOP (0.400", 10.16mm Width)

庫存6,096

DRAM

SDRAM

512Mb (32M x 16)

Parallel

143MHz

2ns

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

IS61NLP25618A-200B3LI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4.5MBIT 200MHZ 165BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TFBGA
Supplier Device Package: 165-BGA (13x15)

封裝: 165-TFBGA

庫存3,088

SRAM

SRAM - Synchronous

4.5Mb (256K x 18)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

165-TFBGA

165-BGA (13x15)

24LC024/P

Microchip Technology

IC EEPROM 2KBIT 400KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封裝: 8-DIP (0.300", 7.62mm)

庫存6,208

EEPROM

2Kb (256 x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

11LC160-I/SN

Microchip Technology

IC EEPROM 16KBIT 100KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: Single Wire
Clock Frequency: 100kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存4,192

EEPROM

16Kb (2K x 8)

Single Wire

100kHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AT24C04D-SSHM-T

Microchip Technology

IC EEPROM 4KBIT 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 450ns
Voltage - Supply: 1.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存1,284,000

EEPROM

4Kb (512 x 8)

I2C

1MHz

5ms

450ns

1.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MT29F128G08CBCEBRT-37B:E

Micron Technology Inc.

IC FLASH 128G PARALLEL 267MHZ

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: Parallel
Clock Frequency: 267MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,184

FLASH

FLASH - NAND

128Gb (16G x 8)

Parallel

267MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

S29GL01GS12FHIV20

Cypress Semiconductor Corp

IC FLASH 1G PARALLEL 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 120ns
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)

封裝: 64-LBGA

庫存3,232

FLASH

FLASH - NOR

1Gb (64M x 16)

Parallel

-

60ns

120ns

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (13x11)

S29GL064S80DHIV20

Cypress Semiconductor Corp

IC FLASH 64M PARALLEL 64FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 80ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (9x9)

封裝: 64-LBGA

庫存4,672

FLASH

FLASH - NOR

64Mb (4M x 16)

Parallel

-

60ns

80ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (9x9)

MT25QU128ABA8E54-0SIT TR

Micron Technology Inc.

IC FLASH 128M SPI 15XFWLBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 15-XFBGA, WLCSP
Supplier Device Package: 15-XFWLBGA

封裝: 15-XFBGA, WLCSP

庫存4,432

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI

133MHz

8ms, 2.8ms

-

1.7 V ~ 2 V

-40°C ~ 85°C (TA)

Surface Mount

15-XFBGA, WLCSP

15-XFWLBGA

AT24C02C-MAHM-E

Microchip Technology

IC EEPROM 2K I2C 1MHZ 8UDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I²C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 550ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN (2x3)

封裝: 8-UFDFN Exposed Pad

庫存2,912

EEPROM

2Kb (256 x 8)

I²C

1MHz

5ms

550ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-UDFN (2x3)

MT53D8DBPM-DC

Micron Technology Inc.

LPDDR4 64G 1GX64 FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,040

-

577578-003-00

Cypress Semiconductor Corp

IC FLASH NOR 128MB 8SOIC

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,264

-

CY7C1345A-117AC

Cypress Semiconductor Corp

IC SRAM 4.5MBIT PAR 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, SDR
Memory Size: 4.5Mbit
Memory Interface: Parallel
Clock Frequency: 117 MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5 ns
Voltage - Supply: 3.15V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: -

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SRAM

SRAM - Synchronous, SDR

4.5Mbit

Parallel

117 MHz

-

7.5 ns

3.15V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

W25Q64FVZPAQ

Winbond Electronics

IC FLASH 64MBIT SPI/QUAD 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 50µs, 3ms
Access Time: 7 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

封裝: -

Request a Quote

FLASH

FLASH - NOR

64Mbit

SPI - Quad I/O, QPI

104 MHz

50µs, 3ms

7 ns

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

R1RW0416DGE-2LR-B1

Renesas Electronics Corporation

SRAM 4MB FAST X16 3V SOJ 12NS 0T

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ

封裝: -

庫存312

SRAM

SRAM - Asynchronous

4Mbit

Parallel

-

12ns

12 ns

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

44-BSOJ (0.400", 10.16mm Width)

44-SOJ

5962-8855206UA

Renesas Electronics Corporation

IC SRAM 256KBIT PARALLEL 28CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 256Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.300", 7.62mm)
Supplier Device Package: 28-CDIP

封裝: -

Request a Quote

SRAM

SRAM - Synchronous

256Kbit

Parallel

-

25ns

25 ns

4.5V ~ 5.5V

-55°C ~ 125°C (TA)

Through Hole

28-CDIP (0.300", 7.62mm)

28-CDIP

W634GU6RB09I

Winbond Electronics

4GB DDR3L 1.35V SDRAM, X16, 1066

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gbit
Memory Interface: Parallel
Clock Frequency: 1.067 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-VFBGA
Supplier Device Package: 96-VFBGA (7.5x13)

封裝: -

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DRAM

SDRAM - DDR3L

4Gbit

Parallel

1.067 GHz

15ns

20 ns

1.283V ~ 1.45V

-40°C ~ 95°C (TC)

Surface Mount

96-VFBGA

96-VFBGA (7.5x13)

AS25F1128MQ-70WIN

Alliance Memory, Inc.

IC FLASH 128MBIT SPI/QUAD 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 150µs, 5ms
Access Time: 6 ns
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

封裝: -

庫存1,695

FLASH

FLASH - NOR

128Mbit

SPI - Quad I/O, QPI

133 MHz

150µs, 5ms

6 ns

1.65V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

CY15B102QSN-108SXIT

Infineon Technologies

IC FRAM 2MBIT SPI/QUAD 8SOIC

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 2Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 108 MHz
Write Cycle Time - Word, Page: -
Access Time: 7 ns
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封裝: -

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FRAM

FRAM (Ferroelectric RAM)

2Mbit

SPI - Quad I/O, QPI

108 MHz

-

7 ns

1.8V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

CG7501AAT

Infineon Technologies

IC SRAM NON VOLATILE 48FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-