頁 757 - 記憶體 | 積體電路 (IC)

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT29F64G08CBEDBL84C3WC1-R	Micron Technology Inc.	IC FLASH 64GBIT WAFER Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存7,936	FLASH	FLASH - NAND	64Gb (8G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
S99GL01GP11FFIR10	Cypress Semiconductor Corp	IC FLASH 1GBIT 110NS SMD Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (11x13)	封裝: 64-LBGA	庫存4,400	FLASH	FLASH - NOR	1Gb (128M x 8)	Parallel	-	-	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (11x13)
N25Q064A13ESF42G	Micron Technology Inc.	IC FLASH 64MBIT 108MHZ 16SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (16M x 4) Memory Interface: SPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: 8ms, 5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SO W	封裝: 16-SOIC (0.295", 7.50mm Width)	庫存5,840	FLASH	FLASH - NOR	64Mb (16M x 4)	SPI	108MHz	8ms, 5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SO W
MT48LC2M32B2B5-7 IT:G	Micron Technology Inc.	IC SDRAM 64MBIT 143MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (2M x 32) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: 14ns Access Time: 5.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (8x13)	封裝: 90-VFBGA	庫存12,612	DRAM	SDRAM	64Mb (2M x 32)	Parallel	143MHz	14ns	5.5ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (8x13)
SST25VF064C-80-4I-Q2AE	Microchip Technology	IC FLASH 64MBIT 80MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 64Mb (8M x 8) Memory Interface: SPI - Dual I/O Clock Frequency: 80MHz Write Cycle Time - Word, Page: 2.5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON	封裝: 8-WDFN Exposed Pad	庫存11,724	FLASH	FLASH	64Mb (8M x 8)	SPI - Dual I/O	80MHz	2.5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON
IDT71016S15Y8	IDT, Integrated Device Technology Inc	IC SRAM 1MBIT 15NS 44SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	封裝: 44-BSOJ (0.400", 10.16mm Width)	庫存6,864	SRAM	SRAM - Asynchronous	1Mb (64K x 16)	Parallel	-	15ns	15ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	44-BSOJ (0.400", 10.16mm Width)	44-SOJ
IDT6116LA45SO	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 45NS 24SOIC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 24-SOIC (0.295", 7.50mm Width) Supplier Device Package: 24-SOIC	封裝: 24-SOIC (0.295", 7.50mm Width)	庫存144,000	SRAM	SRAM - Asynchronous	16Kb (2K x 8)	Parallel	-	45ns	45ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	24-SOIC (0.295", 7.50mm Width)	24-SOIC
IS42S32800B-7B-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 143MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (8M x 32) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 90-LFBGA Supplier Device Package: 90-LFBGA (8x13)	封裝: 90-LFBGA	庫存2,848	DRAM	SDRAM	256Mb (8M x 32)	Parallel	143MHz	-	5.5ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	90-LFBGA	90-LFBGA (8x13)
CYK001M16SCAU-70BAXI	Cypress Semiconductor Corp	IC PSRAM 16MBIT 70NS 48FBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.3 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-FBGA (6x8)	封裝: 48-TFBGA	庫存2,432	PSRAM	PSRAM (Pseudo SRAM)	16Mb (1M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.3 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-FBGA (6x8)
AT29C020-90JU-T	Microchip Technology	IC FLASH 2MBIT 90NS 32PLCC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	封裝: 32-LCC (J-Lead)	庫存3,856	FLASH	FLASH	2Mb (256K x 8)	Parallel	-	10ms	90ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
MT46V64M8P-6T L:F	Micron Technology Inc.	IC SDRAM 512MBIT 167MHZ 66TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP	封裝: 66-TSSOP (0.400", 10.16mm Width)	庫存3,216	DRAM	SDRAM - DDR	512Mb (64M x 8)	Parallel	167MHz	15ns	700ps	2.3 V ~ 2.7 V	0°C ~ 70°C (TA)	Surface Mount	66-TSSOP (0.400", 10.16mm Width)	66-TSOP
IS61QDPB41M36A-400M3L	ISSI, Integrated Silicon Solution Inc	IC SRAM 36MBIT 400MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QUADP Memory Size: 36Mb (1M x 36) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: 8.4ns Voltage - Supply: 1.71 V ~ 1.89 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-LFBGA (15x17)	封裝: 165-LBGA	庫存2,208	SRAM	SRAM - Synchronous, QUADP	36Mb (1M x 36)	Parallel	400MHz	-	8.4ns	1.71 V ~ 1.89 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-LFBGA (15x17)
7028L20PFGI8	IDT, Integrated Device Technology Inc	IC SRAM 1MBIT 20NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP	封裝: 100-LQFP	庫存6,864	SRAM	SRAM - Dual Port, Asynchronous	1Mb (64K x 16)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP
7016S15PF	IDT, Integrated Device Technology Inc	IC SRAM 144KBIT 15NS 80TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 144Kb (16K x 9) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 80-LQFP Supplier Device Package: 80-TQFP (14x14)	封裝: 80-LQFP	庫存3,488	SRAM	SRAM - Dual Port, Asynchronous	144Kb (16K x 9)	Parallel	-	15ns	15ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	80-LQFP	80-TQFP (14x14)
MT49H8M36SJ-25E:B	Micron Technology Inc.	IC RLDRAM 288MBIT 400MHZ 144FBGA Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 288Mb (8M x 36) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: 15ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 144-TFBGA Supplier Device Package: 144-FBGA (18.5x11)	封裝: 144-TFBGA	庫存7,936	DRAM	DRAM	288Mb (8M x 36)	Parallel	400MHz	-	15ns	1.7 V ~ 1.9 V	0°C ~ 95°C (TC)	Surface Mount	144-TFBGA	144-FBGA (18.5x11)
IS46TR16128AL-125KBLA2	ISSI, Integrated Silicon Solution Inc	IC SDRAM 2GBIT 800MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封裝: 96-TFBGA	庫存6,096	DRAM	SDRAM - DDR3	2Gb (128M x 16)	Parallel	800MHz	15ns	20ns	1.283 V ~ 1.45 V	-40°C ~ 105°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS42S86400F-6TL	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 166MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封裝: 54-TSOP (0.400", 10.16mm Width)	庫存3,344	DRAM	SDRAM	512Mb (64M x 8)	Parallel	166MHz	-	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
71342SA70J8	IDT, Integrated Device Technology Inc	IC SRAM 32KBIT 70NS 52PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 32Kb (4K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 52-LCC (J-Lead) Supplier Device Package: 52-PLCC (19.13x19.13)	封裝: 52-LCC (J-Lead)	庫存4,144	SRAM	SRAM - Dual Port, Asynchronous	32Kb (4K x 8)	Parallel	-	70ns	70ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	52-LCC (J-Lead)	52-PLCC (19.13x19.13)
71V35761SA166BGI	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 166MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 3.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	封裝: 119-BGA	庫存7,120	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	166MHz	-	3.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
CAV24M01YE-GT3	ON Semiconductor	IC EEPROM 1MBIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Mb (128K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 400ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: 8-TSSOP (0.173", 4.40mm Width)	庫存7,872	EEPROM	EEPROM	1Mb (128K x 8)	I2C	1MHz	5ms	400ns	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
W29GL064CH7T	Winbond Electronics	IC FLASH 64MBIT 70NS 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP (14x20)	封裝: 56-TFSOP (0.724", 18.40mm Width)	庫存81,612	FLASH	FLASH - NOR	64Mb (8M x 8, 4M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP (14x20)
SST25VF040B-50-4I-S2AF	Microchip Technology	IC FLASH 4MBIT 50MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8) Memory Interface: SPI Clock Frequency: 50MHz Write Cycle Time - Word, Page: 10µs Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.209", 5.30mm Width)	庫存184,332	FLASH	FLASH	4Mb (512K x 8)	SPI	50MHz	10µs	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
25AA640AT-E/MNY	Microchip Technology	IC EEPROM 64KBIT 10MHZ 8TDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-TDFN (2x3)	封裝: 8-WFDFN Exposed Pad	庫存14,244	EEPROM	EEPROM	64Kb (8K x 8)	SPI	10MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-WFDFN Exposed Pad	8-TDFN (2x3)
CY7C1399BN-12VXIT	Cypress Semiconductor Corp	IC SRAM 256KBIT 12NS 28SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 28-SOJ	封裝: 28-BSOJ (0.300", 7.62mm Width)	庫存98,400	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	12ns	12ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	28-BSOJ (0.300", 7.62mm Width)	28-SOJ
MR4A16BMA35	Everspin Technologies Inc.	IC MRAM 16MBIT 35NS 48FBGA Memory Type: Non-Volatile Memory Format: RAM Technology: MRAM (Magnetoresistive RAM) Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-LFBGA Supplier Device Package: 48-FBGA (10x10)	封裝: 48-LFBGA	庫存7,356	RAM	MRAM (Magnetoresistive RAM)	16Mb (1M x 16)	Parallel	-	35ns	35ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-LFBGA	48-FBGA (10x10)
25AA512-I/W16K	Microchip Technology	IC EEPROM 512K SPI 20MHZ WAFER Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kb (64K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封裝: Die	庫存5,120	EEPROM	EEPROM	512Kb (64K x 8)	SPI	20MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	Die	Die
S25FL256SAGBHIS03	Cypress Semiconductor Corp	IC FLASH 256M SPI 133MHZ 24BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (8x6)	封裝: 24-TBGA	庫存5,632	FLASH	FLASH - NOR	256Mb (32M x 8)	SPI - Quad I/O	133MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-BGA (8x6)
S29WS128N0PBFA0A0	Cypress Semiconductor Corp	IC MEMORY NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存6,688	-	-	-	-	-	-	-	-	-	-	-	-
W25Q32BVSSJG TR	Winbond Electronics	IC FLASH MEMORY 32MB Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存6,832	-	-	-	-	-	-	-	-	-	-	-	-
IS61NVP25672-200B1I	ISSI, Integrated Silicon Solution Inc	IC SRAM 18M PARALLEL 209LFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (256K x 72) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 209-BGA Supplier Device Package: 209-LFBGA (14x22)	封裝: 209-BGA	庫存6,880	SRAM	SRAM - Synchronous	18Mb (256K x 72)	Parallel	200MHz	-	3.1ns	2.375 V ~ 2.625 V	-40°C ~ 85°C (TA)	Surface Mount	209-BGA	209-LFBGA (14x22)

MT29F64G08CBEDBL84C3WC1-R

Micron Technology Inc.

IC FLASH 64GBIT WAFER

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,936

FLASH

FLASH - NAND

64Gb (8G x 8)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

S99GL01GP11FFIR10

Cypress Semiconductor Corp

IC FLASH 1GBIT 110NS SMD

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (11x13)

封裝: 64-LBGA

庫存4,400

FLASH

FLASH - NOR

1Gb (128M x 8)

Parallel

-

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (11x13)

N25Q064A13ESF42G

Micron Technology Inc.

IC FLASH 64MBIT 108MHZ 16SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (16M x 4)
Memory Interface: SPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SO W

封裝: 16-SOIC (0.295", 7.50mm Width)

庫存5,840

FLASH

FLASH - NOR

64Mb (16M x 4)

SPI

108MHz

8ms, 5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SO W

MT48LC2M32B2B5-7 IT:G

Micron Technology Inc.

IC SDRAM 64MBIT 143MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (2M x 32)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: 14ns
Access Time: 5.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (8x13)

封裝: 90-VFBGA

庫存12,612

DRAM

SDRAM

64Mb (2M x 32)

Parallel

143MHz

14ns

5.5ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (8x13)

SST25VF064C-80-4I-Q2AE

Microchip Technology

IC FLASH 64MBIT 80MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI - Dual I/O
Clock Frequency: 80MHz
Write Cycle Time - Word, Page: 2.5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON

封裝: 8-WDFN Exposed Pad

庫存11,724

FLASH

64Mb (8M x 8)

SPI - Dual I/O

80MHz

2.5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON

IDT71016S15Y8

IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 15NS 44SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ

封裝: 44-BSOJ (0.400", 10.16mm Width)

庫存6,864

SRAM

SRAM - Asynchronous

1Mb (64K x 16)

Parallel

-

15ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

44-BSOJ (0.400", 10.16mm Width)

44-SOJ

IDT6116LA45SO

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 45NS 24SOIC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 24-SOIC

封裝: 24-SOIC (0.295", 7.50mm Width)

庫存144,000

SRAM

SRAM - Asynchronous

16Kb (2K x 8)

Parallel

-

45ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

24-SOIC (0.295", 7.50mm Width)

24-SOIC

IS42S32800B-7B-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 143MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (8M x 32)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-LFBGA
Supplier Device Package: 90-LFBGA (8x13)

封裝: 90-LFBGA

庫存2,848

DRAM

SDRAM

256Mb (8M x 32)

Parallel

143MHz

-

5.5ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

90-LFBGA

90-LFBGA (8x13)

CYK001M16SCAU-70BAXI

Cypress Semiconductor Corp

IC PSRAM 16MBIT 70NS 48FBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.3 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-FBGA (6x8)

封裝: 48-TFBGA

庫存2,432

PSRAM

PSRAM (Pseudo SRAM)

16Mb (1M x 16)

Parallel

-

70ns

2.7 V ~ 3.3 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-FBGA (6x8)

AT29C020-90JU-T

Microchip Technology

IC FLASH 2MBIT 90NS 32PLCC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

封裝: 32-LCC (J-Lead)

庫存3,856

FLASH

2Mb (256K x 8)

Parallel

-

10ms

90ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

MT46V64M8P-6T L:F

Micron Technology Inc.

IC SDRAM 512MBIT 167MHZ 66TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP

封裝: 66-TSSOP (0.400", 10.16mm Width)

庫存3,216

DRAM

SDRAM - DDR

512Mb (64M x 8)

Parallel

167MHz

15ns

700ps

2.3 V ~ 2.7 V

0°C ~ 70°C (TA)

Surface Mount

66-TSSOP (0.400", 10.16mm Width)

66-TSOP

IS61QDPB41M36A-400M3L

ISSI, Integrated Silicon Solution Inc

IC SRAM 36MBIT 400MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QUADP
Memory Size: 36Mb (1M x 36)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: 8.4ns
Voltage - Supply: 1.71 V ~ 1.89 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-LFBGA (15x17)

封裝: 165-LBGA

庫存2,208

SRAM

SRAM - Synchronous, QUADP

36Mb (1M x 36)

Parallel

400MHz

-

8.4ns

1.71 V ~ 1.89 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-LFBGA (15x17)

7028L20PFGI8

IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 20NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP

封裝: 100-LQFP

庫存6,864

SRAM

SRAM - Dual Port, Asynchronous

1Mb (64K x 16)

Parallel

-

20ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP

7016S15PF

IDT, Integrated Device Technology Inc

IC SRAM 144KBIT 15NS 80TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 144Kb (16K x 9)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Supplier Device Package: 80-TQFP (14x14)

封裝: 80-LQFP

庫存3,488

SRAM

SRAM - Dual Port, Asynchronous

144Kb (16K x 9)

Parallel

-

15ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

80-LQFP

80-TQFP (14x14)

MT49H8M36SJ-25E:B

Micron Technology Inc.

IC RLDRAM 288MBIT 400MHZ 144FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 288Mb (8M x 36)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: 15ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-FBGA (18.5x11)

封裝: 144-TFBGA

庫存7,936

DRAM

288Mb (8M x 36)

Parallel

400MHz

-

15ns

1.7 V ~ 1.9 V

0°C ~ 95°C (TC)

Surface Mount

144-TFBGA

144-FBGA (18.5x11)

IS46TR16128AL-125KBLA2

ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 800MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封裝: 96-TFBGA

庫存6,096

DRAM

SDRAM - DDR3

2Gb (128M x 16)

Parallel

800MHz

15ns

20ns

1.283 V ~ 1.45 V

-40°C ~ 105°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS42S86400F-6TL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 166MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封裝: 54-TSOP (0.400", 10.16mm Width)

庫存3,344

DRAM

SDRAM

512Mb (64M x 8)

Parallel

166MHz

-

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

71342SA70J8

IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 70NS 52PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 32Kb (4K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-LCC (J-Lead)
Supplier Device Package: 52-PLCC (19.13x19.13)

封裝: 52-LCC (J-Lead)

庫存4,144

SRAM

SRAM - Dual Port, Asynchronous

32Kb (4K x 8)

Parallel

-

70ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

52-LCC (J-Lead)

52-PLCC (19.13x19.13)

71V35761SA166BGI

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 166MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 3.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

封裝: 119-BGA

庫存7,120

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

166MHz

-

3.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

CAV24M01YE-GT3

ON Semiconductor

IC EEPROM 1MBIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Mb (128K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 400ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: 8-TSSOP (0.173", 4.40mm Width)

庫存7,872

EEPROM

1Mb (128K x 8)

I2C

1MHz

5ms

400ns

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

W29GL064CH7T

Winbond Electronics

IC FLASH 64MBIT 70NS 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8, 4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP (14x20)

封裝: 56-TFSOP (0.724", 18.40mm Width)

庫存81,612

FLASH

FLASH - NOR

64Mb (8M x 8, 4M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP (14x20)

SST25VF040B-50-4I-S2AF

Microchip Technology

IC FLASH 4MBIT 50MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Memory Interface: SPI
Clock Frequency: 50MHz
Write Cycle Time - Word, Page: 10µs
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.209", 5.30mm Width)

庫存184,332

FLASH

4Mb (512K x 8)

SPI

50MHz

10µs

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

25AA640AT-E/MNY

Microchip Technology

IC EEPROM 64KBIT 10MHZ 8TDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-TDFN (2x3)

封裝: 8-WFDFN Exposed Pad

庫存14,244

EEPROM

64Kb (8K x 8)

SPI

10MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-WFDFN Exposed Pad

8-TDFN (2x3)

CY7C1399BN-12VXIT

Cypress Semiconductor Corp

IC SRAM 256KBIT 12NS 28SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 28-SOJ

封裝: 28-BSOJ (0.300", 7.62mm Width)

庫存98,400

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

12ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

28-BSOJ (0.300", 7.62mm Width)

28-SOJ

MR4A16BMA35

Everspin Technologies Inc.

IC MRAM 16MBIT 35NS 48FBGA

Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LFBGA
Supplier Device Package: 48-FBGA (10x10)

封裝: 48-LFBGA

庫存7,356

RAM

MRAM (Magnetoresistive RAM)

16Mb (1M x 16)

Parallel

-

35ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

48-LFBGA

48-FBGA (10x10)

25AA512-I/W16K

Microchip Technology

IC EEPROM 512K SPI 20MHZ WAFER

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kb (64K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封裝: Die

庫存5,120

EEPROM

512Kb (64K x 8)

SPI

20MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

Die

S25FL256SAGBHIS03

Cypress Semiconductor Corp

IC FLASH 256M SPI 133MHZ 24BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (8x6)

封裝: 24-TBGA

庫存5,632

FLASH

FLASH - NOR

256Mb (32M x 8)

SPI - Quad I/O

133MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-BGA (8x6)

S29WS128N0PBFA0A0

Cypress Semiconductor Corp

IC MEMORY NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存6,688

-

W25Q32BVSSJG TR

Winbond Electronics

IC FLASH MEMORY 32MB

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存6,832

-

IS61NVP25672-200B1I

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 209LFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (256K x 72)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 209-BGA
Supplier Device Package: 209-LFBGA (14x22)

封裝: 209-BGA

庫存6,880

SRAM

SRAM - Synchronous

18Mb (256K x 72)

Parallel

200MHz

-

3.1ns

2.375 V ~ 2.625 V

-40°C ~ 85°C (TA)

Surface Mount

209-BGA

209-LFBGA (14x22)