頁 842 - 記憶體 | 積體電路 (IC)

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS61QDB22M18C-250M3	ISSI, Integrated Silicon Solution Inc	IC SRAM 36MBIT 250MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QUAD Memory Size: 36Mb (2M x 18) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: 8.4ns Voltage - Supply: 1.71 V ~ 1.89 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-LFBGA (15x17)	封裝: 165-LBGA	庫存2,080	SRAM	SRAM - Synchronous, QUAD	36Mb (2M x 18)	Parallel	250MHz	-	8.4ns	1.71 V ~ 1.89 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-LFBGA (15x17)
S99-50362	Cypress Semiconductor Corp	IC MEMORY 1GB FLASH 3.0V 56TSOP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存7,104	-	-	-	-	-	-	-	-	-	-	-	-
PC28F128G18FE	Micron Technology Inc.	IC FLASH 128MBIT 96NS 64EASYBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 96ns Access Time: 96ns Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 64-TBGA Supplier Device Package: 64-EasyBGA (8x10)	封裝: 64-TBGA	庫存3,760	FLASH	FLASH - NOR	128Mb (8M x 16)	Parallel	133MHz	96ns	96ns	1.7 V ~ 2 V	-30°C ~ 85°C (TC)	Surface Mount	64-TBGA	64-EasyBGA (8x10)
93C86AT-E/SN	Microchip Technology	IC EEPROM 16KBIT 3MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 2ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存6,816	EEPROM	EEPROM	16Kb (2K x 8)	SPI	3MHz	2ms	-	4.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
CY14B104L-BA20XIT	Cypress Semiconductor Corp	IC NVSRAM 4MBIT 20NS 48FBGA Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-FBGA (6x10)	封裝: 48-TFBGA	庫存2,736	NVSRAM	NVSRAM (Non-Volatile SRAM)	4Mb (512K x 8)	Parallel	-	20ns	20ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-FBGA (6x10)
IDT71V416S10BEI8	IDT, Integrated Device Technology Inc	IC SRAM 4MBIT 10NS 48CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-CABGA (9x9)	封裝: 48-TFBGA	庫存6,736	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	10ns	10ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-CABGA (9x9)
IDT71P71604S200BQG	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 200MHZ 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR II Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 7.88ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	封裝: 165-TBGA	庫存3,008	SRAM	SRAM - Synchronous, DDR II	18Mb (512K x 36)	Parallel	200MHz	-	7.88ns	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
IDT709199L12PF	IDT, Integrated Device Technology Inc	IC SRAM 1.125MBIT 12NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 1.125Mb (128K x 9) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 12ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: 100-LQFP	庫存7,744	SRAM	SRAM - Dual Port, Synchronous	1.125Mb (128K x 9)	Parallel	-	-	12ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
MT48LC8M8A2TG-7E L:G TR	Micron Technology Inc.	IC SDRAM 64MBIT 133MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (8M x 8) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 14ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封裝: 54-TSOP (0.400", 10.16mm Width)	庫存3,360	DRAM	SDRAM	64Mb (8M x 8)	Parallel	133MHz	14ns	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
MT48H8M32LFF5-8	Micron Technology Inc.	IC SDRAM 256MBIT 125MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPSDR Memory Size: 256Mb (8M x 32) Memory Interface: Parallel Clock Frequency: 125MHz Write Cycle Time - Word, Page: 15ns Access Time: 7ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (8x13)	封裝: 90-VFBGA	庫存643,776	DRAM	SDRAM - Mobile LPSDR	256Mb (8M x 32)	Parallel	125MHz	15ns	7ns	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (8x13)
MT46V32M16TG-75Z:C TR	Micron Technology Inc.	IC SDRAM 512MBIT 133MHZ 66TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 15ns Access Time: 750ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP	封裝: 66-TSSOP (0.400", 10.16mm Width)	庫存4,656	DRAM	SDRAM - DDR	512Mb (32M x 16)	Parallel	133MHz	15ns	750ps	2.3 V ~ 2.7 V	0°C ~ 70°C (TA)	Surface Mount	66-TSSOP (0.400", 10.16mm Width)	66-TSOP
AT49F040A-55PI	Microchip Technology	IC FLASH 4MBIT 55NS 32DIP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 40µs Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Through Hole Package / Case: 32-DIP (0.600", 15.24mm) Supplier Device Package: 32-DIP	封裝: 32-DIP (0.600", 15.24mm)	庫存7,648	FLASH	FLASH	4Mb (512K x 8)	Parallel	-	40µs	55ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Through Hole	32-DIP (0.600", 15.24mm)	32-DIP
CY7C2563XV18-633BZXC	Cypress Semiconductor Corp	IC SRAM 72MBIT 633MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II+ Memory Size: 72Mb (4M x 18) Memory Interface: Parallel Clock Frequency: 633MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	封裝: 165-LBGA	庫存7,280	SRAM	SRAM - Synchronous, QDR II+	72Mb (4M x 18)	Parallel	633MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
71V67703S80BGG8	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 8NS 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: 8ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	封裝: 119-BGA	庫存4,128	SRAM	SRAM - Synchronous	9Mb (256K x 36)	Parallel	100MHz	-	8ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
IS64WV51216BLL-10MLA3-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 8MBIT 10NS 48MINIBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mb (512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-miniBGA (9x11)	封裝: 48-TFBGA	庫存5,664	SRAM	SRAM - Asynchronous	8Mb (512K x 16)	Parallel	-	10ns	10ns	2.4 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	48-TFBGA	48-miniBGA (9x11)
IS42S16320D-7BL-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 143MHZ 54BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x13)	封裝: 54-TFBGA	庫存5,424	DRAM	SDRAM	512Mb (32M x 16)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x13)
MT40A1G4RH-075E:B TR	Micron Technology Inc.	IC SDRAM 4GBIT 1.33GHZ 78BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (1G x 4) Memory Interface: Parallel Clock Frequency: 1.33GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (9x10.5)	封裝: 78-TFBGA	庫存3,792	DRAM	SDRAM - DDR4	4Gb (1G x 4)	Parallel	1.33GHz	-	-	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (9x10.5)
71V256SA12PZGI8	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 12NS 28TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-TSSOP (0.465", 11.80mm Width) Supplier Device Package: 28-TSOP	封裝: 28-TSSOP (0.465", 11.80mm Width)	庫存6,704	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	12ns	12ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	28-TSSOP (0.465", 11.80mm Width)	28-TSOP
IS42S32200L-6TL-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 64MBIT 166MHZ 86TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (2M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 86-TFSOP (0.400", 10.16mm Width) Supplier Device Package: 86-TSOP II	封裝: 86-TFSOP (0.400", 10.16mm Width)	庫存7,712	DRAM	SDRAM	64Mb (2M x 32)	Parallel	166MHz	-	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	86-TFSOP (0.400", 10.16mm Width)	86-TSOP II
N24C02UVTG	ON Semiconductor	IC EEPROM 2KBIT 1MHZ US8 Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (128 x 16) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 4ms Access Time: 450ns Voltage - Supply: 1.6 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-VFSOP (0.091", 2.30mm Width) Supplier Device Package: US8	封裝: 8-VFSOP (0.091", 2.30mm Width)	庫存3,712	EEPROM	EEPROM	2Kb (128 x 16)	I2C	1MHz	4ms	450ns	1.6 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-VFSOP (0.091", 2.30mm Width)	US8
CY7C199D-10VXIT	Cypress Semiconductor Corp	IC SRAM 256KBIT 10NS 28SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 28-SOJ	封裝: 28-BSOJ (0.300", 7.62mm Width)	庫存42,816	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	10ns	10ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	28-BSOJ (0.300", 7.62mm Width)	28-SOJ
MT40A512M8RH-083E AIT:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.2GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 1.2GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,040	DRAM	SDRAM - DDR4	4Gb (512M x 8)	Parallel	1.2GHz	-	-	1.14 V ~ 1.26 V	-40°C ~ 95°C (TC)	-	-	-
S25FL512SDPBHI210	Cypress Semiconductor Corp	IC FLASH 512M SPI 66MHZ 24BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 66MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (8x6)	封裝: 24-TBGA	庫存4,464	FLASH	FLASH - NOR	512Mb (64M x 8)	SPI - Quad I/O	66MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-BGA (8x6)
IS43TR82560CL-125KBLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 78TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (8x10.5)	封裝: 78-TFBGA	庫存4,336	DRAM	SDRAM - DDR3L	2Gb (256M x 8)	Parallel	800MHz	15ns	20ns	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-TWBGA (8x10.5)
S29AL008J70BFN020	Cypress Semiconductor Corp	IC FLASH 8M PARALLEL 48FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8, 512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-FBGA (8.15x6.15)	封裝: 48-VFBGA	庫存3,024	FLASH	FLASH - NOR	8Mb (1M x 8, 512K x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	48-VFBGA	48-FBGA (8.15x6.15)
S25FL128SDSMFB000	Cypress Semiconductor Corp	IC FLASH 128M SPI 80MHZ 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 80MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	封裝: 16-SOIC (0.295", 7.50mm Width)	庫存26,118	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI - Quad I/O	80MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
MT53D512M64D4RQ-053 WT:E TR	Micron Technology Inc.	IC DRAM 32G 1866MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (512M x 64) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,648	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MTFC4GLWDM-4M AAT A	Micron Technology Inc.	MODULE EMMC 4GB 100LBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,448	-	-	-	-	-	-	-	-	-	-	-	-
MT29F4G01ABAFD12-IT:F TR	Micron Technology Inc.	IC FLASH 4G SPI TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (4G x 1) Memory Interface: SPI Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	封裝: 24-TBGA	庫存2,800	FLASH	FLASH - NAND	4Gb (4G x 1)	SPI	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
DS2433X#UW	Maxim Integrated	IC INTEGRATED CIRCUIT Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,696	-	-	-	-	-	-	-	-	-	-	-	-

IS61QDB22M18C-250M3

ISSI, Integrated Silicon Solution Inc

IC SRAM 36MBIT 250MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QUAD
Memory Size: 36Mb (2M x 18)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: 8.4ns
Voltage - Supply: 1.71 V ~ 1.89 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-LFBGA (15x17)

封裝: 165-LBGA

庫存2,080

SRAM

SRAM - Synchronous, QUAD

36Mb (2M x 18)

Parallel

250MHz

-

8.4ns

1.71 V ~ 1.89 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-LFBGA (15x17)

S99-50362

Cypress Semiconductor Corp

IC MEMORY 1GB FLASH 3.0V 56TSOP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,104

-

PC28F128G18FE

Micron Technology Inc.

IC FLASH 128MBIT 96NS 64EASYBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 96ns
Access Time: 96ns
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 64-TBGA
Supplier Device Package: 64-EasyBGA (8x10)

封裝: 64-TBGA

庫存3,760

FLASH

FLASH - NOR

128Mb (8M x 16)

Parallel

133MHz

96ns

1.7 V ~ 2 V

-30°C ~ 85°C (TC)

Surface Mount

64-TBGA

64-EasyBGA (8x10)

93C86AT-E/SN

Microchip Technology

IC EEPROM 16KBIT 3MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 2ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存6,816

EEPROM

16Kb (2K x 8)

SPI

3MHz

2ms

-

4.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

CY14B104L-BA20XIT

Cypress Semiconductor Corp

IC NVSRAM 4MBIT 20NS 48FBGA

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-FBGA (6x10)

封裝: 48-TFBGA

庫存2,736

NVSRAM

NVSRAM (Non-Volatile SRAM)

4Mb (512K x 8)

Parallel

-

20ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-FBGA (6x10)

IDT71V416S10BEI8

IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 10NS 48CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-CABGA (9x9)

封裝: 48-TFBGA

庫存6,736

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

10ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-CABGA (9x9)

IDT71P71604S200BQG

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 200MHZ 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 7.88ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

封裝: 165-TBGA

庫存3,008

SRAM

SRAM - Synchronous, DDR II

18Mb (512K x 36)

Parallel

200MHz

-

7.88ns

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

IDT709199L12PF

IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 12NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 1.125Mb (128K x 9)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 12ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: 100-LQFP

庫存7,744

SRAM

SRAM - Dual Port, Synchronous

1.125Mb (128K x 9)

Parallel

-

12ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

MT48LC8M8A2TG-7E L:G TR

Micron Technology Inc.

IC SDRAM 64MBIT 133MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (8M x 8)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 14ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封裝: 54-TSOP (0.400", 10.16mm Width)

庫存3,360

DRAM

SDRAM

64Mb (8M x 8)

Parallel

133MHz

14ns

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

MT48H8M32LFF5-8

Micron Technology Inc.

IC SDRAM 256MBIT 125MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPSDR
Memory Size: 256Mb (8M x 32)
Memory Interface: Parallel
Clock Frequency: 125MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 7ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (8x13)

封裝: 90-VFBGA

庫存643,776

DRAM

SDRAM - Mobile LPSDR

256Mb (8M x 32)

Parallel

125MHz

15ns

7ns

1.7 V ~ 1.95 V

0°C ~ 70°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (8x13)

MT46V32M16TG-75Z:C TR

Micron Technology Inc.

IC SDRAM 512MBIT 133MHZ 66TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 750ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP

封裝: 66-TSSOP (0.400", 10.16mm Width)

庫存4,656

DRAM

SDRAM - DDR

512Mb (32M x 16)

Parallel

133MHz

15ns

750ps

2.3 V ~ 2.7 V

0°C ~ 70°C (TA)

Surface Mount

66-TSSOP (0.400", 10.16mm Width)

66-TSOP

AT49F040A-55PI

Microchip Technology

IC FLASH 4MBIT 55NS 32DIP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 40µs
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Through Hole
Package / Case: 32-DIP (0.600", 15.24mm)
Supplier Device Package: 32-DIP

封裝: 32-DIP (0.600", 15.24mm)

庫存7,648

FLASH

4Mb (512K x 8)

Parallel

-

40µs

55ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Through Hole

32-DIP (0.600", 15.24mm)

32-DIP

CY7C2563XV18-633BZXC

Cypress Semiconductor Corp

IC SRAM 72MBIT 633MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II+
Memory Size: 72Mb (4M x 18)
Memory Interface: Parallel
Clock Frequency: 633MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

封裝: 165-LBGA

庫存7,280

SRAM

SRAM - Synchronous, QDR II+

72Mb (4M x 18)

Parallel

633MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

71V67703S80BGG8

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 8NS 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: 8ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

封裝: 119-BGA

庫存4,128

SRAM

SRAM - Synchronous

9Mb (256K x 36)

Parallel

100MHz

-

8ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

IS64WV51216BLL-10MLA3-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 8MBIT 10NS 48MINIBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-miniBGA (9x11)

封裝: 48-TFBGA

庫存5,664

SRAM

SRAM - Asynchronous

8Mb (512K x 16)

Parallel

-

10ns

2.4 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

48-TFBGA

48-miniBGA (9x11)

IS42S16320D-7BL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 143MHZ 54BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x13)

封裝: 54-TFBGA

庫存5,424

DRAM

SDRAM

512Mb (32M x 16)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x13)

MT40A1G4RH-075E:B TR

Micron Technology Inc.

IC SDRAM 4GBIT 1.33GHZ 78BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (1G x 4)
Memory Interface: Parallel
Clock Frequency: 1.33GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (9x10.5)

封裝: 78-TFBGA

庫存3,792

DRAM

SDRAM - DDR4

4Gb (1G x 4)

Parallel

1.33GHz

-

1.14 V ~ 1.26 V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (9x10.5)

71V256SA12PZGI8

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 12NS 28TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package: 28-TSOP

封裝: 28-TSSOP (0.465", 11.80mm Width)

庫存6,704

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

12ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

28-TSSOP (0.465", 11.80mm Width)

28-TSOP

IS42S32200L-6TL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 166MHZ 86TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (2M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II

封裝: 86-TFSOP (0.400", 10.16mm Width)

庫存7,712

DRAM

SDRAM

64Mb (2M x 32)

Parallel

166MHz

-

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

86-TFSOP (0.400", 10.16mm Width)

86-TSOP II

N24C02UVTG

ON Semiconductor

IC EEPROM 2KBIT 1MHZ US8

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (128 x 16)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 4ms
Access Time: 450ns
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Supplier Device Package: US8

封裝: 8-VFSOP (0.091", 2.30mm Width)

庫存3,712

EEPROM

2Kb (128 x 16)

I2C

1MHz

4ms

450ns

1.6 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-VFSOP (0.091", 2.30mm Width)

US8

CY7C199D-10VXIT

Cypress Semiconductor Corp

IC SRAM 256KBIT 10NS 28SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 28-SOJ

封裝: 28-BSOJ (0.300", 7.62mm Width)

庫存42,816

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

10ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

28-BSOJ (0.300", 7.62mm Width)

28-SOJ

MT40A512M8RH-083E AIT:B

Micron Technology Inc.

IC DRAM 4G PARALLEL 1.2GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,040

DRAM

SDRAM - DDR4

4Gb (512M x 8)

Parallel

1.2GHz

-

1.14 V ~ 1.26 V

-40°C ~ 95°C (TC)

-

S25FL512SDPBHI210

Cypress Semiconductor Corp

IC FLASH 512M SPI 66MHZ 24BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (8x6)

封裝: 24-TBGA

庫存4,464

FLASH

FLASH - NOR

512Mb (64M x 8)

SPI - Quad I/O

66MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-BGA (8x6)

IS43TR82560CL-125KBLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 78TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (8x10.5)

封裝: 78-TFBGA

庫存4,336

DRAM

SDRAM - DDR3L

2Gb (256M x 8)

Parallel

800MHz

15ns

20ns

1.283 V ~ 1.45 V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-TWBGA (8x10.5)

S29AL008J70BFN020

Cypress Semiconductor Corp

IC FLASH 8M PARALLEL 48FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8, 512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-FBGA (8.15x6.15)

封裝: 48-VFBGA

庫存3,024

FLASH

FLASH - NOR

8Mb (1M x 8, 512K x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

48-VFBGA

48-FBGA (8.15x6.15)

S25FL128SDSMFB000

Cypress Semiconductor Corp

IC FLASH 128M SPI 80MHZ 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 80MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

封裝: 16-SOIC (0.295", 7.50mm Width)

庫存26,118

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI - Quad I/O

80MHz

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

MT53D512M64D4RQ-053 WT:E TR

Micron Technology Inc.

IC DRAM 32G 1866MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,648

DRAM

SDRAM - Mobile LPDDR4

32Gb (512M x 64)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MTFC4GLWDM-4M AAT A

Micron Technology Inc.

MODULE EMMC 4GB 100LBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存2,448

-

MT29F4G01ABAFD12-IT:F TR

Micron Technology Inc.

IC FLASH 4G SPI TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (4G x 1)
Memory Interface: SPI
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

封裝: 24-TBGA

庫存2,800

FLASH

FLASH - NAND

4Gb (4G x 1)

SPI

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-T-PBGA (6x8)

DS2433X#UW

Maxim Integrated

IC INTEGRATED CIRCUIT

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,696

-