圖片 |
零件編號 |
製造商 |
描述 |
封裝 |
庫存 |
數量 |
Channel Type | Number of Drivers | Gate Type | Voltage - Supply | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Input Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
IC DRVIER HALF-BRIDGE 8SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存7,360 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Inverting, Non-Inverting | 200V | 70ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Infineon Technologies |
IC DVR HIGH SIDE 600V 8SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存2,272 |
|
Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | - | 500mA, 500mA | Non-Inverting | 600V | 80ns, 80ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Infineon Technologies |
IC MOSFET DRVR HI/LO SIDE 14DIP
|
封裝: 14-DIP (0.300", 7.62mm), 13 Leads |
庫存5,152 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 3.3 V ~ 20 V | 6V, 9.5V | 2A, 2A | Non-Inverting | 600V | 25ns, 17ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm), 13 Leads | 14-PDIP |
||
Maxim Integrated |
IC MOSFET DRIVER 12-TQFN
|
封裝: 12-WQFN Exposed Pad |
庫存7,552 |
|
Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | 0.8V, 2V | 2A, 2A | Inverting, Non-Inverting | 125V | 65ns, 65ns | -40°C ~ 150°C (TJ) | Surface Mount | 12-WQFN Exposed Pad | 12-TQFN (4x4) |
||
Intersil |
IC MOSFET DRIVER SGL 10DFN
|
封裝: 10-VFDFN Exposed Pad |
庫存4,656 |
|
Independent | 2 | N-Channel MOSFET | 4.5 V ~ 7.5 V | 1.7V, 3.4V | 3.2A, 3.2A | Non-Inverting | 30V | 5.3ns, 4.8ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
||
Intersil |
IC DRVR MOSFET DUAL-CH 8DIP
|
封裝: 8-DIP (0.300", 7.62mm) |
庫存5,952 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 10ns | -40°C ~ 125°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
||
Microchip Technology |
IC DRIVER MOSFET 1.5A DUAL 8SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存6,992 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 20ns, 29ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Linear Technology |
IC DRIVER RECT SYNC CONV 8SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存4,816 |
|
Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 11 V | - | 2A, 2A | Inverting, Non-Inverting | - | 15ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
||
Linear Technology |
IC MOSFET DVR N-CH SYNC HV 8MSOP
|
封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad |
庫存3,504 |
|
Independent | 2 | N-Channel MOSFET | 7.2 V ~ 13.5 V | 1.85V, 3.25V | 2.5A, 3A | Inverting | 114V | 8ns, 5ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-EP |
||
Intersil |
IC MOSFET DRVR SYNC BUCK 10-DFN
|
封裝: 10-VFDFN Exposed Pad |
庫存48,480 |
|
Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | - | -, 4A | Non-Inverting | 36V | 8ns, 8ns | 0°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
||
Microchip Technology |
IC DRIVER MOSFET 3A DUAL 16-SOIC
|
封裝: 16-SOIC (0.295", 7.50mm Width) |
庫存5,776 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 3A, 3A | Inverting, Non-Inverting | - | 28ns, 32ns | 0°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
||
Texas Instruments |
IC DUAL HS MOSFET DRVR 8-TSSOP
|
封裝: 8-TSSOP (0.173", 4.40mm Width) |
庫存5,792 |
|
Synchronous | 2 | N-Channel, P-Channel MOSFET | 4 V ~ 14 V | 1V, 4V | 2A, 2A | Inverting, Non-Inverting | - | 14ns, 15ns | -40°C ~ 125°C (TA) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
||
Intersil |
IC DRIVER MOSFET DUAL HS 8-SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存3,552 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 15 V | 0.8V, 2.4V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 10ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Monolithic Power Systems Inc. |
IC GATE DRIVER
|
封裝: 8-VDFN Exposed Pad |
庫存2,368 |
|
Independent | 2 | N-Channel MOSFET | 9 V ~ 18 V | 1V, 2.4V | 2.5A, 2.5A | Non-Inverting | 100V | 12ns, 9ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-QFN (3x3) |
||
Infineon Technologies |
IC DVR HALF BRIDGE IC 24SSOP
|
封裝: 24-SSOP (0.209", 5.30mm Width) |
庫存112,272 |
|
Independent | 2 | IGBT | 11.5 V ~ 20 V | 0.8V, 2V | 2A, 3A | Non-Inverting | 1200V | 24ns, 7ns | -40°C ~ 150°C (TJ) | Surface Mount | 24-SSOP (0.209", 5.30mm Width) | 24-SSOP |
||
Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存1,028,136 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 19ns, 19ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Texas Instruments |
IC HI/LO-SIDE DVR 3A 120V 8SOPWR
|
封裝: 8-PowerSOIC (0.154", 3.90mm Width) |
庫存321,372 |
|
Independent | 2 | N-Channel MOSFET | 8 V ~ 17 V | 3V, 8V | 3A, 3A | Non-Inverting | 120V | 8ns, 7ns | -40°C ~ 140°C (TJ) | Surface Mount | 8-PowerSOIC (0.154", 3.90mm Width) | 8-SO PowerPad |
||
Fairchild/ON Semiconductor |
IC GATE DRIVER DUAL 4A 8-MLP
|
封裝: 8-WDFN Exposed Pad |
庫存5,472 |
|
Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 5A, 5A | Inverting, Non-Inverting | - | 12ns, 9ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-MLP (3x3) |
||
Infineon Technologies |
IC DRIVER HALF BRIDGE 600V 8SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存78,000 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 3V | 210mA, 360mA | Inverting, Non-Inverting | 600V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Fairchild/ON Semiconductor |
IC GATE DRIVER HIGH SIDE 8SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存406,764 |
|
Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 1V, 3.6V | 250mA, 500mA | Non-Inverting | 600V | 70ns, 30ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
||
Power Integrations |
GATE DRIVER CORE SCALE-2 4500V
|
封裝: Module |
庫存5,296 |
|
Single | 1 | IGBT | 14.5 V ~ 15.5 V | - | 50A, 50A | - | 4500V | 30ns, 25ns | -40°C ~ 85°C (TA) | Surface Mount | Module | Module |
||
Power Integrations |
MODULE GATE DVR P&P SCALE 1
|
封裝: - |
庫存7,376 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
||
Renesas Electronics America |
IC DRVR MOSFET DUAL-CH 8DIP
|
封裝: 8-DIP (0.300", 7.62mm) |
庫存5,280 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 10ns | -40°C ~ 125°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
||
ON Semiconductor |
IC GATE DRIVER HALF BRIDGE 8SOP
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存2,000 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.9V | 350mA, 650mA | Non-Inverting | 200V | 60ns, 30ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Renesas Electronics America |
IC MOSFET DRVR SYNC BUCK 8-QFN
|
封裝: 8-VQFN Exposed Pad |
庫存4,272 |
|
Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | 1V, 2V | 2A, 2A | Non-Inverting | 33V | 8ns, 8ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | 8-QFN (3x3) |
||
ON Semiconductor |
IC DRIVER MOSFET DUAL 12V 8MLP
|
封裝: 8-VDFN Exposed Pad |
庫存6,624 |
|
Synchronous | 2 | N-Channel MOSFET | 10 V ~ 13.5 V | 0.8V, 2.5V | - | Inverting, Non-Inverting | 15V | 40ns, 20ns | 0°C ~ 125°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-MLP (5x6) |
||
Linear Technology |
5V ISOLATED HI SIDE DX UL RECOG.
|
封裝: 18-DIP (0.300", 7.62mm) |
庫存2,560 |
|
- | 1 | - | 4.75V ~ 5.25V | - | - | Non-Inverting | - | - | - | Through Hole | 18-DIP (0.300", 7.62mm) | 18-DIP |
||
IXYS Integrated Circuits Division |
GATE DRIVER HALF BRIDGE 3P 0.12A
|
封裝: - |
庫存8,754 |
|
3-Phase | 3 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.4V | 200mA, 350mA | Non-Inverting | 600 V | 90ns, 35ns | 150°C (TJ) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
||
Analog Devices Inc. |
100V DUAL HIGH-SIDE MOSFET GATE
|
封裝: - |
庫存771 |
|
Independent | 2 | N-Channel MOSFET | 5V ~ 14V | - | - | Non-Inverting | 115 V | 18ns, 14ns | -40°C ~ 125°C (TJ) | Surface Mount | 12-TSSOP (0.118", 3.00mm Width) Exposed Pad | 12-MSOP-EP |
||
Infineon Technologies |
IC HALF BRIDGE GATE DRIVER 650V
|
封裝: - |
庫存1,491 |
|
Synchronous | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | 1.1V, 1.7V | 2.5A, 2.5A | Non-Inverting | 650 V | 15ns, 15ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8-69 |