頁 7 - Microsemi Corporation 產品 - 電晶體 - 雙極 (BJT) - RF

零件編號	製造商	描述	封裝	庫存	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MRF559GT	Microsemi Corporation	COMM/BIPOLAR TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 870MHz Noise Figure (dB Typ @ f): - Gain: 9.5dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Current - Collector (Ic) (Max): 150mA Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,152	16V	870MHz	-	9.5dB	2W	30 @ 50mA, 10V	150mA	-	-	-	-
MRF559	Microsemi Corporation	TRANS NPN 16V 150MA MACROX Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 870MHz Noise Figure (dB Typ @ f): - Gain: 9.5dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Current - Collector (Ic) (Max): 150mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: Macro-X Supplier Device Package: Macro-X	封裝: Macro-X	庫存6,336	16V	870MHz	-	9.5dB	2W	30 @ 50mA, 10V	150mA	-	Surface Mount	Macro-X	Macro-X
MRF555GT	Microsemi Corporation	RF NPN TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 470MHz Noise Figure (dB Typ @ f): - Gain: 12.5dB Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V Current - Collector (Ic) (Max): 500mA Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,280	16V	470MHz	-	12.5dB	3W	50 @ 100mA, 5V	500mA	-	-	-	-
MRF555G	Microsemi Corporation	RF NPN TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 470MHz Noise Figure (dB Typ @ f): - Gain: 12.5dB Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V Current - Collector (Ic) (Max): 500mA Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,888	16V	470MHz	-	12.5dB	3W	50 @ 100mA, 5V	500mA	-	-	-	-
MRF553T	Microsemi Corporation	TRANS NPN 16V 500MA POWERMACRO Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 175MHz Noise Figure (dB Typ @ f): - Gain: 11.5dB Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V Current - Collector (Ic) (Max): 500mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: Power Macro Supplier Device Package: Power Macro	封裝: Power Macro	庫存6,080	16V	175MHz	-	11.5dB	3W	30 @ 250mA, 5V	500mA	-	Surface Mount	Power Macro	Power Macro
MRF553GT	Microsemi Corporation	TRANS NPN 16V 500MA POWERMACRO Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 175MHz Noise Figure (dB Typ @ f): - Gain: 11.5dB Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V Current - Collector (Ic) (Max): 500mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: Power Macro Supplier Device Package: Power Macro	封裝: Power Macro	庫存5,952	16V	175MHz	-	11.5dB	3W	30 @ 250mA, 5V	500mA	-	Surface Mount	Power Macro	Power Macro
MRF553	Microsemi Corporation	TRANS NPN 16V 500MA POWERMACRO Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 175MHz Noise Figure (dB Typ @ f): - Gain: 11.5dB Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V Current - Collector (Ic) (Max): 500mA Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存6,224	16V	175MHz	-	11.5dB	3W	30 @ 250mA, 5V	500mA	-	-	-	-
MRF4427R2	Microsemi Corporation	TRANS NPN 20V 400MA SO8 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 20dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存3,472	20V	-	-	20dB	1.5W	10 @ 10mA, 5V	400mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MRF4427R1	Microsemi Corporation	TRANS NPN 20V 400MA SO8 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 20dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-dBGA (2x1.5)	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存5,488	20V	-	-	20dB	1.5W	10 @ 10mA, 5V	400mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-dBGA (2x1.5)
MRF4427GR2	Microsemi Corporation	RF NPN TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 20dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存6,672	20V	-	-	20dB	1.5W	10 @ 10mA, 5V	400mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MRF4427GR1	Microsemi Corporation	RF NPN TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 20dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存2,368	20V	-	-	20dB	1.5W	10 @ 10mA, 5V	400mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MRF4427G	Microsemi Corporation	RF NPN TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 20dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存4,976	20V	-	-	20dB	1.5W	10 @ 10mA, 5V	400mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MRF4427	Microsemi Corporation	TRANS NPN 20V 400MA SO8 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 20dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存3,760	20V	-	-	20dB	1.5W	10 @ 10mA, 5V	400mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
JANTXV2N4957UB	Microsemi Corporation	TRANS PNP 30V 30MA Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: - Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	封裝: 3-SMD, No Lead	庫存7,360	30V	-	3.5dB @ 450MHz	25dB	200mW	30 @ 5mA, 10V	30mA	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
JANTXV2N4957	Microsemi Corporation	TRANS PNP 30V 30MA TO72 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: - Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	封裝: TO-72-3 Metal Can	庫存3,536	30V	-	3.5dB @ 450MHz	25dB	200mW	30 @ 5mA, 10V	30mA	-65°C ~ 200°C (TJ)	Through Hole	TO-72-3 Metal Can	TO-72
JAN2N4957	Microsemi Corporation	TRANS PNP 30V 30MA TO72 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: - Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	封裝: TO-72-3 Metal Can	庫存2,592	30V	-	3.5dB @ 450MHz	25dB	200mW	30 @ 5mA, 10V	30mA	-65°C ~ 200°C (TJ)	Through Hole	TO-72-3 Metal Can	TO-72
2N4957	Microsemi Corporation	TRANS PNP 30V 30MA TO72 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: - Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	封裝: TO-72-3 Metal Can	庫存11,436	30V	-	3.5dB @ 450MHz	25dB	200mW	30 @ 5mA, 10V	30mA	-65°C ~ 200°C (TJ)	Through Hole	TO-72-3 Metal Can	TO-72
JANTX2N2857UB	Microsemi Corporation	TRANS NPN 15V 0.04A Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 21dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	封裝: 3-SMD, No Lead	庫存6,368	15V	-	4.5dB @ 450MHz	21dB	200mW	30 @ 3mA, 1V	40mA	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
2N2857UB	Microsemi Corporation	TRANS NPN 15V 0.04A Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 21dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	封裝: 3-SMD, No Lead	庫存3,936	15V	-	4.5dB @ 450MHz	21dB	200mW	30 @ 3mA, 1V	40mA	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
JANTXV2N2857	Microsemi Corporation	TRANS NPN 15V 0.04A TO-72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 12.5dB ~ 21dB @ 450MHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	封裝: TO-72-3 Metal Can	庫存3,856	15V	500MHz	4.5dB @ 450MHz	12.5dB ~ 21dB @ 450MHz	200mW	30 @ 3mA, 1V	40mA	-65°C ~ 200°C (TJ)	Through Hole	TO-72-3 Metal Can	TO-72
JAN2N2857	Microsemi Corporation	TRANS NPN 15V 0.04A TO-72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 12.5dB ~ 21dB @ 450MHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	封裝: TO-72-3 Metal Can	庫存5,568	15V	500MHz	4.5dB @ 450MHz	12.5dB ~ 21dB @ 450MHz	200mW	30 @ 3mA, 1V	40mA	-65°C ~ 200°C (TJ)	Through Hole	TO-72-3 Metal Can	TO-72
MS2203	Microsemi Corporation	TRANS RF BIPO 5W 300MA M220 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.09GHz Noise Figure (dB Typ @ f): - Gain: 10.8dB ~ 12.3dB Power - Max: 5W DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M220 Supplier Device Package: M220	封裝: M220	庫存6,336	20V	1.09GHz	-	10.8dB ~ 12.3dB	5W	120 @ 100mA, 5V	300mA	200°C (TJ)	Chassis Mount	M220	M220
MS2204	Microsemi Corporation	TRANS RF BIPO 600MW 300MA M115 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.09GHz Noise Figure (dB Typ @ f): - Gain: 10.8dB Power - Max: 600mW DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	封裝: M115	庫存2,432	20V	1.09GHz	-	10.8dB	600mW	15 @ 100mA, 5V	300mA	200°C (TJ)	Chassis Mount	M115	M115
MS2206	Microsemi Corporation	TRANS RF BIPO 7.5W 1A M115 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 7.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	封裝: M115	庫存4,496	20V	1.025GHz ~ 1.15GHz	-	10dB	7.5W	20 @ 100mA, 5V	1A	200°C (TJ)	Chassis Mount	M115	M115
MRF517	Microsemi Corporation	TRANS RF BIPO 2.5W 150MA TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 4GHz Noise Figure (dB Typ @ f): - Gain: 9dB ~ 10dB Power - Max: 2.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 60mA, 10V Current - Collector (Ic) (Max): 150mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	封裝: TO-205AD, TO-39-3 Metal Can	庫存7,680	20V	4GHz	-	9dB ~ 10dB	2.5W	50 @ 60mA, 10V	150mA	-	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
BFY90	Microsemi Corporation	TRANS RF NPN 200MW 50MA TO72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.3GHz Noise Figure (dB Typ @ f): 2.5dB ~ 5dB @ 500MHz Gain: 20dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 25mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	封裝: TO-206AF, TO-72-4 Metal Can	庫存2,912	15V	1.3GHz	2.5dB ~ 5dB @ 500MHz	20dB	200mW	20 @ 25mA, 1V	50mA	-	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
MS1202	Microsemi Corporation	TRANS RF BIPO 15W 1A M135 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 35V Frequency - Transition: 118MHz ~ 136MHz Noise Figure (dB Typ @ f): - Gain: 8.4dB Power - Max: 15W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 100mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M135 Supplier Device Package: M135	封裝: M135	庫存3,120	35V	118MHz ~ 136MHz	-	8.4dB	15W	5 @ 100mA, 5V	1A	200°C (TJ)	Chassis Mount	M135	M135
MS2228	Microsemi Corporation	TRANS RF BIPO 175W 5.4A M214 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 175W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 5.4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M214 Supplier Device Package: M214	封裝: M214	庫存5,888	65V	1.03GHz ~ 1.09GHz	-	9dB	175W	10 @ 1A, 5V	5.4A	200°C (TJ)	Chassis Mount	M214	M214
MS1007	Microsemi Corporation	TRANS RF BIPO 233W 10A M174 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 30MHz Noise Figure (dB Typ @ f): - Gain: 14dB Power - Max: 233W DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 1.4A, 6V Current - Collector (Ic) (Max): 10A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M174 Supplier Device Package: M174	封裝: M174	庫存5,328	55V	30MHz	-	14dB	233W	18 @ 1.4A, 6V	10A	200°C (TJ)	Chassis Mount	M174	M174
MS2393	Microsemi Corporation	TRANS RF BIPO 87.5W 11A M138 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 8.2dB Power - Max: 583W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 300mA, 5V Current - Collector (Ic) (Max): 11A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M138 Supplier Device Package: M138	封裝: M138	庫存3,104	65V	1.025GHz ~ 1.15GHz	-	8.2dB	583W	5 @ 300mA, 5V	11A	200°C (TJ)	Chassis Mount	M138	M138

MRF559GT

Microsemi Corporation

COMM/BIPOLAR TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 870MHz
Noise Figure (dB Typ @ f): -
Gain: 9.5dB
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,152

16V

870MHz

-

9.5dB

2W

30 @ 50mA, 10V

150mA

-

MRF559

Microsemi Corporation

TRANS NPN 16V 150MA MACROX

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 870MHz
Noise Figure (dB Typ @ f): -
Gain: 9.5dB
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Macro-X
Supplier Device Package: Macro-X

封裝: Macro-X

庫存6,336

16V

870MHz

-

9.5dB

2W

30 @ 50mA, 10V

150mA

-

Surface Mount

Macro-X

MRF555GT

Microsemi Corporation

RF NPN TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 470MHz
Noise Figure (dB Typ @ f): -
Gain: 12.5dB
Power - Max: 3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,280

16V

470MHz

-

12.5dB

3W

50 @ 100mA, 5V

500mA

-

MRF555G

Microsemi Corporation

RF NPN TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 470MHz
Noise Figure (dB Typ @ f): -
Gain: 12.5dB
Power - Max: 3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,888

16V

470MHz

-

12.5dB

3W

50 @ 100mA, 5V

500mA

-

MRF553T

Microsemi Corporation

TRANS NPN 16V 500MA POWERMACRO

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 175MHz
Noise Figure (dB Typ @ f): -
Gain: 11.5dB
Power - Max: 3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Power Macro
Supplier Device Package: Power Macro

封裝: Power Macro

庫存6,080

16V

175MHz

-

11.5dB

3W

30 @ 250mA, 5V

500mA

-

Surface Mount

Power Macro

MRF553GT

Microsemi Corporation

TRANS NPN 16V 500MA POWERMACRO

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 175MHz
Noise Figure (dB Typ @ f): -
Gain: 11.5dB
Power - Max: 3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Power Macro
Supplier Device Package: Power Macro

封裝: Power Macro

庫存5,952

16V

175MHz

-

11.5dB

3W

30 @ 250mA, 5V

500mA

-

Surface Mount

Power Macro

MRF553

Microsemi Corporation

TRANS NPN 16V 500MA POWERMACRO

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 175MHz
Noise Figure (dB Typ @ f): -
Gain: 11.5dB
Power - Max: 3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存6,224

16V

175MHz

-

11.5dB

3W

30 @ 250mA, 5V

500mA

-

MRF4427R2

Microsemi Corporation

TRANS NPN 20V 400MA SO8

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 20dB
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存3,472

20V

-

20dB

1.5W

10 @ 10mA, 5V

400mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

MRF4427R1

Microsemi Corporation

TRANS NPN 20V 400MA SO8

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 20dB
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-dBGA (2x1.5)

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存5,488

20V

-

20dB

1.5W

10 @ 10mA, 5V

400mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-dBGA (2x1.5)

MRF4427GR2

Microsemi Corporation

RF NPN TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 20dB
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存6,672

20V

-

20dB

1.5W

10 @ 10mA, 5V

400mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

MRF4427GR1

Microsemi Corporation

RF NPN TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 20dB
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存2,368

20V

-

20dB

1.5W

10 @ 10mA, 5V

400mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

MRF4427G

Microsemi Corporation

RF NPN TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 20dB
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存4,976

20V

-

20dB

1.5W

10 @ 10mA, 5V

400mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

MRF4427

Microsemi Corporation

TRANS NPN 20V 400MA SO8

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 20dB
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存3,760

20V

-

20dB

1.5W

10 @ 10mA, 5V

400mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

JANTXV2N4957UB

Microsemi Corporation

TRANS PNP 30V 30MA

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
Gain: 25dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

封裝: 3-SMD, No Lead

庫存7,360

30V

-

3.5dB @ 450MHz

25dB

200mW

30 @ 5mA, 10V

30mA

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

JANTXV2N4957

Microsemi Corporation

TRANS PNP 30V 30MA TO72

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
Gain: 25dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-72-3 Metal Can
Supplier Device Package: TO-72

封裝: TO-72-3 Metal Can

庫存3,536

30V

-

3.5dB @ 450MHz

25dB

200mW

30 @ 5mA, 10V

30mA

-65°C ~ 200°C (TJ)

Through Hole

TO-72-3 Metal Can

TO-72

JAN2N4957

Microsemi Corporation

TRANS PNP 30V 30MA TO72

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
Gain: 25dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-72-3 Metal Can
Supplier Device Package: TO-72

封裝: TO-72-3 Metal Can

庫存2,592

30V

-

3.5dB @ 450MHz

25dB

200mW

30 @ 5mA, 10V

30mA

-65°C ~ 200°C (TJ)

Through Hole

TO-72-3 Metal Can

TO-72

2N4957

Microsemi Corporation

TRANS PNP 30V 30MA TO72

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
Gain: 25dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-72-3 Metal Can
Supplier Device Package: TO-72

封裝: TO-72-3 Metal Can

庫存11,436

30V

-

3.5dB @ 450MHz

25dB

200mW

30 @ 5mA, 10V

30mA

-65°C ~ 200°C (TJ)

Through Hole

TO-72-3 Metal Can

TO-72

JANTX2N2857UB

Microsemi Corporation

TRANS NPN 15V 0.04A

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Gain: 21dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

封裝: 3-SMD, No Lead

庫存6,368

15V

-

4.5dB @ 450MHz

21dB

200mW

30 @ 3mA, 1V

40mA

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

2N2857UB

Microsemi Corporation

TRANS NPN 15V 0.04A

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Gain: 21dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

封裝: 3-SMD, No Lead

庫存3,936

15V

-

4.5dB @ 450MHz

21dB

200mW

30 @ 3mA, 1V

40mA

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

JANTXV2N2857

Microsemi Corporation

TRANS NPN 15V 0.04A TO-72

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Gain: 12.5dB ~ 21dB @ 450MHz
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-72-3 Metal Can
Supplier Device Package: TO-72

封裝: TO-72-3 Metal Can

庫存3,856

15V

500MHz

4.5dB @ 450MHz

12.5dB ~ 21dB @ 450MHz

200mW

30 @ 3mA, 1V

40mA

-65°C ~ 200°C (TJ)

Through Hole

TO-72-3 Metal Can

TO-72

JAN2N2857

Microsemi Corporation

TRANS NPN 15V 0.04A TO-72

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Gain: 12.5dB ~ 21dB @ 450MHz
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-72-3 Metal Can
Supplier Device Package: TO-72

封裝: TO-72-3 Metal Can

庫存5,568

15V

500MHz

4.5dB @ 450MHz

12.5dB ~ 21dB @ 450MHz

200mW

30 @ 3mA, 1V

40mA

-65°C ~ 200°C (TJ)

Through Hole

TO-72-3 Metal Can

TO-72

MS2203

Microsemi Corporation

TRANS RF BIPO 5W 300MA M220

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 10.8dB ~ 12.3dB
Power - Max: 5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M220
Supplier Device Package: M220

封裝: M220

庫存6,336

20V

1.09GHz

-

10.8dB ~ 12.3dB

5W

120 @ 100mA, 5V

300mA

200°C (TJ)

Chassis Mount

M220

MS2204

Microsemi Corporation

TRANS RF BIPO 600MW 300MA M115

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 10.8dB
Power - Max: 600mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M115
Supplier Device Package: M115

封裝: M115

庫存2,432

20V

1.09GHz

-

10.8dB

600mW

15 @ 100mA, 5V

300mA

200°C (TJ)

Chassis Mount

M115

MS2206

Microsemi Corporation

TRANS RF BIPO 7.5W 1A M115

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 7.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M115
Supplier Device Package: M115

封裝: M115

庫存4,496

20V

1.025GHz ~ 1.15GHz

-

10dB

7.5W

20 @ 100mA, 5V

1A

200°C (TJ)

Chassis Mount

M115

MRF517

Microsemi Corporation

TRANS RF BIPO 2.5W 150MA TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 4GHz
Noise Figure (dB Typ @ f): -
Gain: 9dB ~ 10dB
Power - Max: 2.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 60mA, 10V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

封裝: TO-205AD, TO-39-3 Metal Can

庫存7,680

20V

4GHz

-

9dB ~ 10dB

2.5W

50 @ 60mA, 10V

150mA

-

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

BFY90

Microsemi Corporation

TRANS RF NPN 200MW 50MA TO72

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.3GHz
Noise Figure (dB Typ @ f): 2.5dB ~ 5dB @ 500MHz
Gain: 20dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 25mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

封裝: TO-206AF, TO-72-4 Metal Can

庫存2,912

15V

1.3GHz

2.5dB ~ 5dB @ 500MHz

20dB

200mW

20 @ 25mA, 1V

50mA

-

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

MS1202

Microsemi Corporation

TRANS RF BIPO 15W 1A M135

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 35V
Frequency - Transition: 118MHz ~ 136MHz
Noise Figure (dB Typ @ f): -
Gain: 8.4dB
Power - Max: 15W
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 100mA, 5V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M135
Supplier Device Package: M135

封裝: M135

庫存3,120

35V

118MHz ~ 136MHz

-

8.4dB

15W

5 @ 100mA, 5V

1A

200°C (TJ)

Chassis Mount

M135

MS2228

Microsemi Corporation

TRANS RF BIPO 175W 5.4A M214

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 9dB
Power - Max: 175W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 5.4A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M214
Supplier Device Package: M214

封裝: M214

庫存5,888

65V

1.03GHz ~ 1.09GHz

-

9dB

175W

10 @ 1A, 5V

5.4A

200°C (TJ)

Chassis Mount

M214

MS1007

Microsemi Corporation

TRANS RF BIPO 233W 10A M174

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 30MHz
Noise Figure (dB Typ @ f): -
Gain: 14dB
Power - Max: 233W
DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 1.4A, 6V
Current - Collector (Ic) (Max): 10A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M174
Supplier Device Package: M174

封裝: M174

庫存5,328

55V

30MHz

-

14dB

233W

18 @ 1.4A, 6V

10A

200°C (TJ)

Chassis Mount

M174

MS2393

Microsemi Corporation

TRANS RF BIPO 87.5W 11A M138

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 8.2dB
Power - Max: 583W
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 300mA, 5V
Current - Collector (Ic) (Max): 11A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M138
Supplier Device Package: M138

封裝: M138

庫存3,104

65V

1.025GHz ~ 1.15GHz

-

8.2dB

583W

5 @ 300mA, 5V

11A

200°C (TJ)

Chassis Mount

M138