頁 2 - NXP 產品 - 二極體 - 整流器 - 單

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
BAS40/ZLVL	NXP	DIODE SCHOTTKY 40V 120MA SOT23 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 120mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 40V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23) Operating Temperature - Junction: 150°C (Max)	封裝: TO-236-3, SC-59, SOT-23-3	庫存3,280	40V	120mA (DC)	1V @ 40mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 40V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)	150°C (Max)
BAS316/ZLX	NXP	DIODE GEN PURP 100V 215MA SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 215mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Capacitance @ Vr, F: 1pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max)	封裝: SC-76, SOD-323	庫存4,832	100V	215mA (DC)	1.25V @ 150mA	Standard Recovery >500ns, > 200mA (Io)	4ns	500nA @ 80V	1pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	150°C (Max)
BAS321/ZLX	NXP	DIODE GEN PURP 200V 250MA SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 200V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max)	封裝: SC-76, SOD-323	庫存3,344	200V	250mA (DC)	1.25V @ 200mA	Standard Recovery >500ns, > 200mA (Io)	50ns	100nA @ 200V	2pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	150°C (Max)
BAS321/ZLF	NXP	DIODE GEN PURP 200V 250MA SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 200V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max)	封裝: SC-76, SOD-323	庫存2,560	200V	250mA (DC)	1.25V @ 200mA	Standard Recovery >500ns, > 200mA (Io)	50ns	100nA @ 200V	2pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	150°C (Max)
BAS316/ZLF	NXP	DIODE GEN PURP 100V 215MA SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 215mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max)	封裝: SC-76, SOD-323	庫存7,680	100V	215mA (DC)	1.25V @ 150mA	Standard Recovery >500ns, > 200mA (Io)	4ns	500nA @ 80V	1.5pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	150°C (Max)
BYC8B-600PQP	NXP	DIODE GEN PURP 600V 8A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 3.4V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 18ns Current - Reverse Leakage @ Vr: 20µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max)	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存6,368	600V	8A	3.4V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	18ns	20µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	175°C (Max)
BAT54T,115	NXP	DIODE SCHOTTKY 30V 200MA SC75 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75 Operating Temperature - Junction: 150°C (Max)	封裝: SC-75, SOT-416	庫存5,392	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SC-75, SOT-416	SC-75	150°C (Max)
BAS116T,115	NXP	DIODE GEN PURP 75V 215MA SC75 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 215mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5nA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75 Operating Temperature - Junction: 150°C (Max)	封裝: SC-75, SOT-416	庫存6,336	75V	215mA (DC)	1.25V @ 150mA	Standard Recovery >500ns, > 200mA (Io)	3µs	5nA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SC-75, SOT-416	SC-75	150°C (Max)
NUR460/L04,112	NXP	DIODE GEN PURP 600V 4A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: 150°C (Max)	封裝: DO-201AD, Axial	庫存4,368	600V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	50µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	150°C (Max)
NUR460/L02,112	NXP	DIODE GEN PURP 600V 4A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: 150°C (Max)	封裝: DO-201AD, Axial	庫存6,576	600V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	50µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	150°C (Max)
NUR460/L01,112	NXP	DIODE GEN PURP 600V 4A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: 150°C (Max)	封裝: DO-201AD, Axial	庫存2,496	600V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	50µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	150°C (Max)
NUR460,133	NXP	DIODE GEN PURP 600V 4A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: 150°C (Max)	封裝: DO-201AD, Axial	庫存6,192	600V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	50µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	150°C (Max)
BY459X-1500S,127	NXP	DIODE GEN PURP 1.5KV 10A TO220F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1500V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.35V @ 6.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 220ns Current - Reverse Leakage @ Vr: 250µA @ 1300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220FP Operating Temperature - Junction: 150°C (Max)	封裝: TO-220-2 Full Pack, Isolated Tab	庫存4,352	1500V	10A (DC)	1.35V @ 6.5A	Fast Recovery =< 500ns, > 200mA (Io)	220ns	250µA @ 1300V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
BY459-1500,127	NXP	DIODE GEN PURP 1.5KV 12A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1500V Current - Average Rectified (Io): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 6.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 350ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 150°C (Max)	封裝: TO-220-2	庫存6,000	1500V	12A (DC)	1.3V @ 6.5A	Fast Recovery =< 500ns, > 200mA (Io)	350ns	-	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
BY359X-1500,127	NXP	DIODE GEN PURP 1.5KV 10A TO220F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1500V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 600ns Current - Reverse Leakage @ Vr: 100µA @ 1300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220FP Operating Temperature - Junction: 150°C (Max)	封裝: TO-220-2 Full Pack, Isolated Tab	庫存2,320	1500V	10A (DC)	1.8V @ 20A	Standard Recovery >500ns, > 200mA (Io)	600ns	100µA @ 1300V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
BY329X-1500,127	NXP	DIODE GEN PURP 1.5KV 6A TO220F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1500V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.45V @ 6.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 230ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220FP Operating Temperature - Junction: 150°C (Max)	封裝: TO-220-2 Full Pack, Isolated Tab	庫存5,952	1500V	6A (DC)	1.45V @ 6.5A	Fast Recovery =< 500ns, > 200mA (Io)	230ns	-	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
BY329-1200,127	NXP	DIODE GEN PURP 1.2KV 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 135ns Current - Reverse Leakage @ Vr: 1mA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 150°C (Max)	封裝: TO-220-2	庫存6,752	1200V	8A	1.85V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	135ns	1mA @ 1000V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
BY329-1000,127	NXP	DIODE GEN PURP 1KV 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 135ns Current - Reverse Leakage @ Vr: 1mA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 150°C (Max)	封裝: TO-220-2	庫存6,528	1000V	8A	1.85V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	135ns	1mA @ 800V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
BY459X-1500,127	NXP	DIODE GEN PURP 1.5KV 12A TO220F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1500V Current - Average Rectified (Io): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 6.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 350ns Current - Reverse Leakage @ Vr: 250µA @ 1300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220FP Operating Temperature - Junction: 150°C (Max)	封裝: TO-220-2 Full Pack, Isolated Tab	庫存6,640	1500V	12A (DC)	1.3V @ 6.5A	Fast Recovery =< 500ns, > 200mA (Io)	350ns	250µA @ 1300V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
BY359X-1500S,127	NXP	DIODE GEN PURP 1.5KV 7A TO220F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1500V Current - Average Rectified (Io): 7A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 350ns Current - Reverse Leakage @ Vr: 100µA @ 1300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220FP Operating Temperature - Junction: 150°C (Max)	封裝: TO-220-2 Full Pack, Isolated Tab	庫存3,488	1500V	7A (DC)	2V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	350ns	100µA @ 1300V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
BY329X-1500S,127	NXP	DIODE GEN PURP 1.5KV 6A TO220F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1500V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 6.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160ns Current - Reverse Leakage @ Vr: 250µA @ 1300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220FP Operating Temperature - Junction: 150°C (Max)	封裝: TO-220-2 Full Pack, Isolated Tab	庫存6,176	1500V	6A (DC)	1.6V @ 6.5A	Fast Recovery =< 500ns, > 200mA (Io)	160ns	250µA @ 1300V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
PMEG2010AEK,115	NXP	DIODE SCHOTTKY 20V 1A SMT3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 20V Capacitance @ Vr, F: 70pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3; MPAK Operating Temperature - Junction: 150°C (Max)	封裝: TO-236-3, SC-59, SOT-23-3	庫存4,464	20V	1A (DC)	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	70pF @ 5V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3; MPAK	150°C (Max)
1PS59SB10,115	NXP	DIODE SCHOTTKY 30V 200MA SMT3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3; MPAK Operating Temperature - Junction: 125°C (Max)	封裝: TO-236-3, SC-59, SOT-23-3	庫存6,208	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3; MPAK	125°C (Max)
BY229X-800,127	NXP	DIODE GEN PURP 600V 8A TO220F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 135ns Current - Reverse Leakage @ Vr: 400µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220FP Operating Temperature - Junction: 150°C (Max)	封裝: TO-220-2 Full Pack, Isolated Tab	庫存4,304	600V	8A	1.85V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	135ns	400µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
BY229X-600,127	NXP	DIODE GEN PURP 500V 8A TO220F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 135ns Current - Reverse Leakage @ Vr: 400µA @ 500V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220FP Operating Temperature - Junction: 150°C (Max)	封裝: TO-220-2 Full Pack, Isolated Tab	庫存2,560	500V	8A	1.85V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	135ns	400µA @ 500V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
BY229X-200,127	NXP	DIODE GEN PURP 150V 8A TO220F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 135ns Current - Reverse Leakage @ Vr: 400µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220FP Operating Temperature - Junction: 150°C (Max)	封裝: TO-220-2 Full Pack, Isolated Tab	庫存6,448	150V	8A	1.85V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	135ns	400µA @ 150V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
BY229-600,127	NXP	DIODE GEN PURP 500V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 135ns Current - Reverse Leakage @ Vr: 400µA @ 500V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 150°C (Max)	封裝: TO-220-2	庫存6,656	500V	8A	1.85V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	135ns	400µA @ 500V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
PRLL5818,115	NXP	DIODE SCHOTTKY 30V 1A MELF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 30V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-87 Supplier Device Package: MELF Operating Temperature - Junction: 125°C (Max)	封裝: SOD-87	庫存2,928	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	50pF @ 4V, 1MHz	Surface Mount	SOD-87	MELF	125°C (Max)

BAS40/ZLVL

NXP

DIODE SCHOTTKY 40V 120MA SOT23

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 120mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 40V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Operating Temperature - Junction: 150°C (Max)

封裝: TO-236-3, SC-59, SOT-23-3

庫存3,280

40V

120mA (DC)

1V @ 40mA

Small Signal =< 200mA (Io), Any Speed

-

10µA @ 40V

5pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

150°C (Max)

BAS316/ZLX

NXP

DIODE GEN PURP 100V 215MA SOD323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 215mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)

封裝: SC-76, SOD-323

庫存4,832

100V

215mA (DC)

1.25V @ 150mA

Standard Recovery >500ns, > 200mA (Io)

4ns

500nA @ 80V

1pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

150°C (Max)

BAS321/ZLX

NXP

DIODE GEN PURP 200V 250MA SOD323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 200V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)

封裝: SC-76, SOD-323

庫存3,344

200V

250mA (DC)

1.25V @ 200mA

Standard Recovery >500ns, > 200mA (Io)

50ns

100nA @ 200V

2pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

150°C (Max)

BAS321/ZLF

NXP

DIODE GEN PURP 200V 250MA SOD323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 200V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)

封裝: SC-76, SOD-323

庫存2,560

200V

250mA (DC)

1.25V @ 200mA

Standard Recovery >500ns, > 200mA (Io)

50ns

100nA @ 200V

2pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

150°C (Max)

BAS316/ZLF

NXP

DIODE GEN PURP 100V 215MA SOD323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 215mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)

封裝: SC-76, SOD-323

庫存7,680

100V

215mA (DC)

1.25V @ 150mA

Standard Recovery >500ns, > 200mA (Io)

4ns

500nA @ 80V

1.5pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

150°C (Max)

BYC8B-600PQP

NXP

DIODE GEN PURP 600V 8A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 3.4V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 18ns
Current - Reverse Leakage @ Vr: 20µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存6,368

600V

8A

3.4V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

18ns

20µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

175°C (Max)

BAT54T,115

NXP

DIODE SCHOTTKY 30V 200MA SC75

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 2µA @ 25V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75
Operating Temperature - Junction: 150°C (Max)

封裝: SC-75, SOT-416

庫存5,392

30V

200mA (DC)

800mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

5ns

2µA @ 25V

10pF @ 1V, 1MHz

Surface Mount

SC-75, SOT-416

SC-75

150°C (Max)

BAS116T,115

NXP

DIODE GEN PURP 75V 215MA SC75

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 215mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5nA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75
Operating Temperature - Junction: 150°C (Max)

封裝: SC-75, SOT-416

庫存6,336

75V

215mA (DC)

1.25V @ 150mA

Standard Recovery >500ns, > 200mA (Io)

3µs

5nA @ 75V

2pF @ 0V, 1MHz

Surface Mount

SC-75, SOT-416

SC-75

150°C (Max)

NUR460/L04,112

NXP

DIODE GEN PURP 600V 4A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 150°C (Max)

封裝: DO-201AD, Axial

庫存4,368

600V

4A

1.28V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

65ns

50µA @ 600V

-

Through Hole

DO-201AD, Axial

DO-201AD

150°C (Max)

NUR460/L02,112

NXP

DIODE GEN PURP 600V 4A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 150°C (Max)

封裝: DO-201AD, Axial

庫存6,576

600V

4A

1.28V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

65ns

50µA @ 600V

-

Through Hole

DO-201AD, Axial

DO-201AD

150°C (Max)

NUR460/L01,112

NXP

DIODE GEN PURP 600V 4A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 150°C (Max)

封裝: DO-201AD, Axial

庫存2,496

600V

4A

1.28V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

65ns

50µA @ 600V

-

Through Hole

DO-201AD, Axial

DO-201AD

150°C (Max)

NUR460,133

NXP

DIODE GEN PURP 600V 4A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 150°C (Max)

封裝: DO-201AD, Axial

庫存6,192

600V

4A

1.28V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

50µA @ 600V

-

Through Hole

DO-201AD, Axial

DO-201AD

150°C (Max)

BY459X-1500S,127

NXP

DIODE GEN PURP 1.5KV 10A TO220F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1500V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 6.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220ns
Current - Reverse Leakage @ Vr: 250µA @ 1300V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 150°C (Max)

封裝: TO-220-2 Full Pack, Isolated Tab

庫存4,352

1500V

10A (DC)

1.35V @ 6.5A

Fast Recovery =< 500ns, > 200mA (Io)

220ns

250µA @ 1300V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

TO-220FP

150°C (Max)

BY459-1500,127

NXP

DIODE GEN PURP 1.5KV 12A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1500V
Current - Average Rectified (Io): 12A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 6.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 150°C (Max)

封裝: TO-220-2

庫存6,000

1500V

12A (DC)

1.3V @ 6.5A

Fast Recovery =< 500ns, > 200mA (Io)

350ns

-

Through Hole

TO-220-2

TO-220AC

150°C (Max)

BY359X-1500,127

NXP

DIODE GEN PURP 1.5KV 10A TO220F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1500V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600ns
Current - Reverse Leakage @ Vr: 100µA @ 1300V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 150°C (Max)

封裝: TO-220-2 Full Pack, Isolated Tab

庫存2,320

1500V

10A (DC)

1.8V @ 20A

Standard Recovery >500ns, > 200mA (Io)

600ns

100µA @ 1300V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

TO-220FP

150°C (Max)

BY329X-1500,127

NXP

DIODE GEN PURP 1.5KV 6A TO220F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1500V
Current - Average Rectified (Io): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.45V @ 6.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 230ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 150°C (Max)

封裝: TO-220-2 Full Pack, Isolated Tab

庫存5,952

1500V

6A (DC)

1.45V @ 6.5A

Fast Recovery =< 500ns, > 200mA (Io)

230ns

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

TO-220FP

150°C (Max)

BY329-1200,127

NXP

DIODE GEN PURP 1.2KV 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135ns
Current - Reverse Leakage @ Vr: 1mA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 150°C (Max)

封裝: TO-220-2

庫存6,752

1200V

8A

1.85V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

135ns

1mA @ 1000V

-

Through Hole

TO-220-2

TO-220AC

150°C (Max)

BY329-1000,127

NXP

DIODE GEN PURP 1KV 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135ns
Current - Reverse Leakage @ Vr: 1mA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 150°C (Max)

封裝: TO-220-2

庫存6,528

1000V

8A

1.85V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

135ns

1mA @ 800V

-

Through Hole

TO-220-2

TO-220AC

150°C (Max)

BY459X-1500,127

NXP

DIODE GEN PURP 1.5KV 12A TO220F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1500V
Current - Average Rectified (Io): 12A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 6.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350ns
Current - Reverse Leakage @ Vr: 250µA @ 1300V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 150°C (Max)

封裝: TO-220-2 Full Pack, Isolated Tab

庫存6,640

1500V

12A (DC)

1.3V @ 6.5A

Fast Recovery =< 500ns, > 200mA (Io)

350ns

250µA @ 1300V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

TO-220FP

150°C (Max)

BY359X-1500S,127

NXP

DIODE GEN PURP 1.5KV 7A TO220F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1500V
Current - Average Rectified (Io): 7A (DC)
Voltage - Forward (Vf) (Max) @ If: 2V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350ns
Current - Reverse Leakage @ Vr: 100µA @ 1300V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 150°C (Max)

封裝: TO-220-2 Full Pack, Isolated Tab

庫存3,488

1500V

7A (DC)

2V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

350ns

100µA @ 1300V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

TO-220FP

150°C (Max)

BY329X-1500S,127

NXP

DIODE GEN PURP 1.5KV 6A TO220F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1500V
Current - Average Rectified (Io): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 6.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160ns
Current - Reverse Leakage @ Vr: 250µA @ 1300V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 150°C (Max)

封裝: TO-220-2 Full Pack, Isolated Tab

庫存6,176

1500V

6A (DC)

1.6V @ 6.5A

Fast Recovery =< 500ns, > 200mA (Io)

160ns

250µA @ 1300V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

TO-220FP

150°C (Max)

PMEG2010AEK,115

NXP

DIODE SCHOTTKY 20V 1A SMT3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 20V
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3; MPAK
Operating Temperature - Junction: 150°C (Max)

封裝: TO-236-3, SC-59, SOT-23-3

庫存4,464

20V

1A (DC)

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 20V

70pF @ 5V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3; MPAK

150°C (Max)

1PS59SB10,115

NXP

DIODE SCHOTTKY 30V 200MA SMT3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 2µA @ 25V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3; MPAK
Operating Temperature - Junction: 125°C (Max)

封裝: TO-236-3, SC-59, SOT-23-3

庫存6,208

30V

200mA (DC)

800mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

5ns

2µA @ 25V

10pF @ 1V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3; MPAK

125°C (Max)

BY229X-800,127

NXP

DIODE GEN PURP 600V 8A TO220F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135ns
Current - Reverse Leakage @ Vr: 400µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 150°C (Max)

封裝: TO-220-2 Full Pack, Isolated Tab

庫存4,304

600V

8A

1.85V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

135ns

400µA @ 600V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

TO-220FP

150°C (Max)

BY229X-600,127

NXP

DIODE GEN PURP 500V 8A TO220F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135ns
Current - Reverse Leakage @ Vr: 400µA @ 500V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 150°C (Max)

封裝: TO-220-2 Full Pack, Isolated Tab

庫存2,560

500V

8A

1.85V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

135ns

400µA @ 500V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

TO-220FP

150°C (Max)

BY229X-200,127

NXP

DIODE GEN PURP 150V 8A TO220F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135ns
Current - Reverse Leakage @ Vr: 400µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 150°C (Max)

封裝: TO-220-2 Full Pack, Isolated Tab

庫存6,448

150V

8A

1.85V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

135ns

400µA @ 150V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

TO-220FP

150°C (Max)

BY229-600,127

NXP

DIODE GEN PURP 500V 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135ns
Current - Reverse Leakage @ Vr: 400µA @ 500V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 150°C (Max)

封裝: TO-220-2

庫存6,656

500V

8A

1.85V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

135ns

400µA @ 500V

-

Through Hole

TO-220-2

TO-220AC

150°C (Max)

PRLL5818,115

NXP

DIODE SCHOTTKY 30V 1A MELF

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 30V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-87
Supplier Device Package: MELF
Operating Temperature - Junction: 125°C (Max)

封裝: SOD-87

庫存2,928

30V

1A

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 30V

50pF @ 4V, 1MHz

Surface Mount

SOD-87

MELF

125°C (Max)