Renesas Electronics America 產品 - 電晶體 - FET、MOSFET - 單

RJK1053DPB-00#J5

Renesas Electronics America

MOSFET N-CH 100V 25A LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 6160pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 65W (Tc)
• Rds On (Max) @ Id, Vgs: 13 mOhm @ 12.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK
• Package / Case: SC-100, SOT-669

封裝: SC-100, SOT-669

RJK0854DPB-00#J5

Renesas Electronics America

MOSFET N-CH 80V LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 55W (Tc)
• Rds On (Max) @ Id, Vgs: 13 mOhm @ 12.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK
• Package / Case: SC-100, SOT-669

封裝: SC-100, SOT-669

RJK0852DPB-00#J5

Renesas Electronics America

MOSFET N-CH 80V 30A LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 55W (Tc)
• Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK
• Package / Case: SC-100, SOT-669

封裝: SC-100, SOT-669

RJK0654DPB-00#J5

Renesas Electronics America

MOSFET N-CH 60V LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 55W (Tc)
• Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 15A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK
• Package / Case: SC-100, SOT-669

封裝: SC-100, SOT-669

RJK0454DPB-00#J5

Renesas Electronics America

MOSFET N-CH 40V 40A LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 55W (Tc)
• Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 20A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK
• Package / Case: SC-100, SOT-669

封裝: SC-100, SOT-669

RJK0452DPB-00#J5

Renesas Electronics America

MOSFET N-CH 40V 45A LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 4030pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 55W (Tc)
• Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 22.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK
• Package / Case: SC-100, SOT-669

封裝: SC-100, SOT-669

RJK03C1DPB-00#J5

Renesas Electronics America

MOSFET N-CH 30V 60A LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V
• Vgs (Max): ±20V
• FET Feature: Schottky Diode (Body)
• Power Dissipation (Max): 65W (Tc)
• Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK
• Package / Case: SC-100, SOT-669

封裝: SC-100, SOT-669

NP90N06VLG-E1-AY

Renesas Electronics America

MOSFET N-CH 60V 90A TO-252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
• Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 45A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

NP88N03KDG-E1-AY

Renesas Electronics America

MOSFET N-CH 30V 88A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
• Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 44A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

NP83P06PDG-E1-AY

Renesas Electronics America

MOSFET P-CH 60V 83A TO-263

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10100pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta), 150W (Tc)
• Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 41.5A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

NP80N06PLG-E1B-AY

Renesas Electronics America

MOSFET N-CH 60V 80A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
• Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 40A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

NP80N04PUG-E1B-AY

Renesas Electronics America

MOSFET N-CH 40V 80A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7350pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
• Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 40A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

NP80N04PLG-E1B-AY

Renesas Electronics America

MOSFET N-CH 40V 80A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
• Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 40A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

NP75P04YLG-E1-AY

Renesas Electronics America

MOSFET P-CH 40V 75A 8HSON

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta), 138W (Tc)
• Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 37.5A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-HSON
• Package / Case: 8-SMD, Flat Lead Exposed Pad

封裝: 8-SMD, Flat Lead Exposed Pad

NP74N04YUG-E1-AY

Renesas Electronics America

MOSFET N-CH 40V 75A 8HSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5430pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta), 120W (Tc)
• Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 37.5A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-HSON
• Package / Case: 8-SMD, Flat Lead Exposed Pad

封裝: 8-SMD, Flat Lead Exposed Pad

NP60N03SUG-E1-AY

Renesas Electronics America

MOSFET N-CH 30V 60A TO-252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
• Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 30A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252 (MP-3ZK)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

NP50P03YDG-E1-AY

Renesas Electronics America

MOSFET P-CH 30V 50A 8HSON

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta), 102W (Tc)
• Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 25A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-HSON
• Package / Case: 8-SMD, Flat Lead Exposed Pad

封裝: 8-SMD, Flat Lead Exposed Pad

NP36P06KDG-E1-AY

Renesas Electronics America

MOSFET P-CH 60V 36A TO-263

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
• Rds On (Max) @ Id, Vgs: 29.5 mOhm @ 18A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

NP33N06YDG-E1-AY

Renesas Electronics America

MOSFET N-CH 60V 33A 8HSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta), 97W (Tc)
• Rds On (Max) @ Id, Vgs: 14 mOhm @ 16.5A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-HSON
• Package / Case: 8-SMD, Flat Lead Exposed Pad

封裝: 8-SMD, Flat Lead Exposed Pad

NP23N06YDG-E1-AY

Renesas Electronics America

MOSFET N-CH 60V 23A 8HSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta), 60W (Tc)
• Rds On (Max) @ Id, Vgs: 27 mOhm @ 11.5A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-HSON
• Package / Case: 8-SMD, Flat Lead Exposed Pad

封裝: 8-SMD, Flat Lead Exposed Pad

NP180N055TUJ-E1-AY

Renesas Electronics America

MOSFET N-CH 55V 180A TO-263-7

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 14250pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
• Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 90A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263-7
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab)

封裝: TO-263-7, D2Pak (6 Leads + Tab)

NP160N055TUJ-E1-AY

Renesas Electronics America

MOSFET N-CH 55V 160A TO-263-7

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10350pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
• Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263-7
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab)

封裝: TO-263-7, D2Pak (6 Leads + Tab)

NP100P04PLG-E1-AY

Renesas Electronics America

MOSFET P-CH 40V 100A TO-263

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 15100pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
• Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 50A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

2SK3943-ZP-E1-AY

Renesas Electronics America

MOSFET N-CH 40V MP-25ZP/TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta), 104W (Tc)
• Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 41A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

2SK3811-ZP-E1-AY

Renesas Electronics America

MOSFET N-CH 40V MP-25ZP/TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 17700pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta), 213W (Tc)
• Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 55A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

2SJ687-ZK-E1-AY

Renesas Electronics America

MOSFET P-CH 20V 20A TO-252

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta), 36W (Tc)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 10A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252 (MP-3ZK)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

NP90N04VUG-E1-AY

Renesas Electronics America

MOSFET N-CH TO-252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
• Rds On (Max) @ Id, Vgs: 4 mOhm @ 45A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

NP90N04MUG-S18-AY

Renesas Electronics America

MOSFET N-CH 40V 90A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 182nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta), 217W (Tc)
• Rds On (Max) @ Id, Vgs: 3 mOhm @ 45A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3

封裝: TO-220-3

NP88N075MUE-S18-AY

Renesas Electronics America

MOSFET N-CH 75V 88A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 12300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
• Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 44A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3

封裝: TO-220-3

NP88N075KUE-E1-AY

Renesas Electronics America

MOSFET N-CH 75V 88A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 12300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
• Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 44A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB