頁 7 - Toshiba Semiconductor and Storage 產品 - 電晶體 - 雙極 (BJT) - 單 | 黑森爾電子
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Toshiba Semiconductor and Storage 產品 - 電晶體 - 雙極 (BJT) - 單

記錄 361
頁  7/13
圖片
零件編號
製造商
描述
封裝
庫存
數量
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2SB1495,Q(M
Toshiba Semiconductor and Storage

TRANS PNP 3A 100V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
封裝: TO-220-3 Full Pack
庫存3,680
3A
100V
1.5V @ 1.5mA, 1.5A
10µA (ICBO)
2000 @ 2A, 2V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SB1495,Q(J
Toshiba Semiconductor and Storage

TRANS PNP 3A 100V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
封裝: TO-220-3 Full Pack
庫存4,496
3A
100V
1.5V @ 1.5mA, 1.5A
10µA (ICBO)
2000 @ 2A, 2V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SB1481(TOJS,Q,M)
Toshiba Semiconductor and Storage

TRANS PNP 4A 100V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 6mA, 3A
  • Current - Collector Cutoff (Max): 2µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
封裝: TO-220-3 Full Pack
庫存4,352
4A
100V
1.5V @ 6mA, 3A
2µA (ICBO)
2000 @ 3A, 2V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SB1457,T6YMEF(M
Toshiba Semiconductor and Storage

TRANS PNP 2A 100V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封裝: TO-226-3, TO-92-3 Long Body
庫存3,008
2A
100V
1.5V @ 1mA, 1A
10µA (ICBO)
2000 @ 1A, 2V
900mW
50MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SB1457,T6TOTOF(J
Toshiba Semiconductor and Storage

TRANS PNP 2A 100V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封裝: TO-226-3, TO-92-3 Long Body
庫存4,064
2A
100V
1.5V @ 1mA, 1A
10µA (ICBO)
2000 @ 1A, 2V
900mW
50MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SB1457(TE6,F,M)
Toshiba Semiconductor and Storage

TRANS PNP 2A 100V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封裝: TO-226-3, TO-92-3 Long Body
庫存2,160
2A
100V
1.5V @ 1mA, 1A
10µA (ICBO)
2000 @ 1A, 2V
900mW
50MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SB1457(T6DW,F,M)
Toshiba Semiconductor and Storage

TRANS PNP 2A 100V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封裝: TO-226-3, TO-92-3 Long Body
庫存2,528
2A
100V
1.5V @ 1mA, 1A
10µA (ICBO)
2000 @ 1A, 2V
900mW
50MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SB1457(T6CNO,A,F)
Toshiba Semiconductor and Storage

TRANS PNP 2A 100V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封裝: TO-226-3, TO-92-3 Long Body
庫存7,216
2A
100V
1.5V @ 1mA, 1A
10µA (ICBO)
2000 @ 1A, 2V
900mW
50MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SB1457(T6CANO,F,M
Toshiba Semiconductor and Storage

TRANS PNP 2A 100V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封裝: TO-226-3, TO-92-3 Long Body
庫存2,912
2A
100V
1.5V @ 1mA, 1A
10µA (ICBO)
2000 @ 1A, 2V
900mW
50MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SB1375,CLARIONF(M
Toshiba Semiconductor and Storage

TRANS PNP 3A 60V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 2A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 9MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
封裝: TO-220-3 Full Pack
庫存2,100
3A
60V
1.5V @ 200mA, 2A
10µA (ICBO)
100 @ 500mA, 5V
2W
9MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA965-Y,T6KOJPF(J
Toshiba Semiconductor and Storage

TRANS PNP 800MA 120V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: LSTM
封裝: TO-226-3, TO-92-3 Long Body
庫存4,176
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
LSTM
2SA965-Y,T6F(J
Toshiba Semiconductor and Storage

TRANS PNP 800MA 120V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: LSTM
封裝: TO-226-3, TO-92-3 Long Body
庫存6,896
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
LSTM
2SA965-Y,SWFF(M
Toshiba Semiconductor and Storage

TRANS PNP 800MA 120V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: LSTM
封裝: TO-226-3, TO-92-3 Long Body
庫存6,544
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
LSTM
2SA965-Y,F(J
Toshiba Semiconductor and Storage

TRANS PNP 800MA 120V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: LSTM
封裝: TO-226-3, TO-92-3 Long Body
庫存3,456
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
LSTM
2SA965-Y(T6CANO,FM
Toshiba Semiconductor and Storage

TRANS PNP 800MA 120V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: LSTM
封裝: TO-226-3, TO-92-3 Long Body
庫存6,208
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
LSTM
2SA965-Y(F,M)
Toshiba Semiconductor and Storage

TRANS PNP 800MA 120V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: LSTM
封裝: TO-226-3, TO-92-3 Long Body
庫存3,056
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
LSTM
2SA965-O,F(J
Toshiba Semiconductor and Storage

TRANS PNP 800MA 120V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: LSTM
封裝: TO-226-3, TO-92-3 Long Body
庫存2,656
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
LSTM
2SA965-O(TE6,F,M)
Toshiba Semiconductor and Storage

TRANS PNP 800MA 120V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: LSTM
封裝: TO-226-3, TO-92-3 Long Body
庫存5,888
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
LSTM
2SA949-Y,ONK-1F(M
Toshiba Semiconductor and Storage

TRANS PNP 50MA 150V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Power - Max: 800mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封裝: TO-226-3, TO-92-3 Long Body
庫存4,096
50mA
150V
800mV @ 1mA, 10A
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA949-Y,ONK-1F(J
Toshiba Semiconductor and Storage

TRANS PNP 50MA 150V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Power - Max: 800mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封裝: TO-226-3, TO-92-3 Long Body
庫存2,240
50mA
150V
800mV @ 1mA, 10A
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA949-Y,F(J
Toshiba Semiconductor and Storage

TRANS PNP 50MA 150V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Power - Max: 800mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封裝: TO-226-3, TO-92-3 Long Body
庫存5,744
50mA
150V
800mV @ 1mA, 10A
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA949-Y(TE6,F,M)
Toshiba Semiconductor and Storage

TRANS PNP 50MA 150V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Power - Max: 800mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封裝: TO-226-3, TO-92-3 Long Body
庫存6,240
50mA
150V
800mV @ 1mA, 10A
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA949-Y(T6SHRP,FM
Toshiba Semiconductor and Storage

TRANS PNP 50MA 150V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Power - Max: 800mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封裝: TO-226-3, TO-92-3 Long Body
庫存6,336
50mA
150V
800mV @ 1mA, 10A
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA949-Y(T6ONK1,FM
Toshiba Semiconductor and Storage

TRANS PNP 50MA 150V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Power - Max: 800mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封裝: TO-226-3, TO-92-3 Long Body
庫存2,192
50mA
150V
800mV @ 1mA, 10A
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA949-Y(T6JVC1,FM
Toshiba Semiconductor and Storage

TRANS PNP 50MA 150V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Power - Max: 800mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封裝: TO-226-3, TO-92-3 Long Body
庫存4,400
50mA
150V
800mV @ 1mA, 10A
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA949-Y(JVC1,F,M)
Toshiba Semiconductor and Storage

TRANS PNP 50MA 150V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Power - Max: 800mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封裝: TO-226-3, TO-92-3 Long Body
庫存3,424
50mA
150V
800mV @ 1mA, 10A
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA949-O(TE6,F,M)
Toshiba Semiconductor and Storage

TRANS PNP 50MA 150V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Power - Max: 800mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封裝: TO-226-3, TO-92-3 Long Body
庫存5,856
50mA
150V
800mV @ 1mA, 10A
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA1972,T6WNLF(J
Toshiba Semiconductor and Storage

TRANS PNP 500MA 400V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 20mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 35MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封裝: TO-226-3, TO-92-3 Long Body
庫存2,544
500mA
400V
1V @ 10mA, 100mA
10µA (ICBO)
140 @ 20mA, 5V
900mW
35MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA1972,F(J
Toshiba Semiconductor and Storage

TRANS PNP 500MA 400V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 20mA, 5V
  • Power - Max: 900mW
  • Frequency - Transition: 35MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封裝: TO-226-3, TO-92-3 Long Body
庫存7,184
500mA
400V
1V @ 10mA, 100mA
10µA (ICBO)
140 @ 20mA, 5V
900mW
35MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA1931,SINFQ(J
Toshiba Semiconductor and Storage

TRANS PNP 5A 50V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
  • Power - Max: 2W
  • Frequency - Transition: 60MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
封裝: TO-220-3 Full Pack
庫存7,344
5A
50V
400mV @ 200mA, 2A
1µA (ICBO)
100 @ 1A, 1V
2W
60MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS