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Vishay Siliconix |
MOSFET P-CH 30V 0.96A SOT563F
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 236mW (Ta)
- Rds On (Max) @ Id, Vgs: 167 mOhm @ 960mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-89-6
- Package / Case: SOT-563, SOT-666
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封裝: SOT-563, SOT-666 |
庫存8,472 |
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Vishay Siliconix |
MOSFET N-CH 60V 10A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 6A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存5,632 |
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Vishay Siliconix |
MOSFET N-CH 100V 28A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 5V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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封裝: TO-262-3 Long Leads, I2Pak, TO-262AA |
庫存7,936 |
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Vishay Siliconix |
MOSFET N-CH 450V 8.8A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 450V
- Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 630 mOhm @ 5.3A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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封裝: TO-262-3 Long Leads, I2Pak, TO-262AA |
庫存3,616 |
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Vishay Siliconix |
MOSFET N-CH 600V 9.2A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封裝: TO-220-3 |
庫存6,864 |
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Vishay Siliconix |
MOSFET N-CH 250V 2.7A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存12,708 |
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Vishay Siliconix |
MOSFET N-CH 30V 8.5A 8SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 12.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存1,424,904 |
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Vishay Siliconix |
MOSFET N-CH 20V 6A 1206-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 9.9A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 1206-8 ChipFET?
- Package / Case: 8-SMD, Flat Lead
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封裝: 8-SMD, Flat Lead |
庫存3,200 |
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Vishay Siliconix |
MOSFET N-CH 200V 34.4A SO8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 34.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37nC @ 7.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1935pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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封裝: PowerPAK? SO-8 |
庫存7,280 |
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Vishay Siliconix |
MOSFET N-CH 200V 2.6A SC70-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 100V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
- Rds On (Max) @ Id, Vgs: 1.38 Ohm @ 750mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SC-70-6 Single
- Package / Case: PowerPAK? SC-70-6
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封裝: PowerPAK? SC-70-6 |
庫存1,315,068 |
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Vishay Siliconix |
MOSFET N-CH 500V 8A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存25,500 |
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Vishay Siliconix |
MOSFET N-CH 20V 12.5A 1212-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 19.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 1212-8
- Package / Case: PowerPAK? 1212-8
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封裝: PowerPAK? 1212-8 |
庫存398,040 |
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Vishay Siliconix |
MOSFET N-CH 100V 9.7A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 5.8A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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封裝: TO-220-3 Full Pack, Isolated Tab |
庫存36,012 |
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Vishay Siliconix |
MOSFET P-CH 50V 18A TO-220AB
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 9.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封裝: TO-220-3 |
庫存103,464 |
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Vishay Siliconix |
MOSFET P-CH 30V 8A 6-TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 6.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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封裝: SOT-23-6 Thin, TSOT-23-6 |
庫存192,300 |
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Vishay Siliconix |
MOSFET N-CH 250V 63.5A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 63.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3002pF @ 125V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 31 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存15,936 |
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Vishay Siliconix |
MOSFET N-CH 40V 120A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14606pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存16,068 |
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Vishay Siliconix |
MOSFET N-CH 80V 40A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 136W (Tc)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存247,848 |
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Vishay Siliconix |
MOSFET N-CH 20V 3.9A SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 850mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Rds On (Max) @ Id, Vgs: 31 mOhm @ 5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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封裝: TO-236-3, SC-59, SOT-23-3 |
庫存1,757,004 |
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Vishay Siliconix |
MOSFET 2N-CH 30V 5.7A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.7A
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存396,420 |
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Vishay Siliconix |
IC REG LINEAR 3.3V 150MA SC70-5
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 6V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.22V @ 150mA
- Current - Output: 150mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 85µA
- PSRR: 72dB ~ 38dB (1kHz ~ 100kHz)
- Control Features: Enable, Power Good
- Protection Features: Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: SC-70-5
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封裝: 5-TSSOP, SC-70-5, SOT-353 |
庫存6,800 |
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Vishay Siliconix |
IC REG LINEAR 3.3V 150MA TSC75-6
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 6V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.22V @ 150mA
- Current - Output: 150mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 85µA
- PSRR: 75dB ~ 40dB (1kHz ~ 100kHz)
- Control Features: Enable
- Protection Features: Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? TSC-75-6
- Supplier Device Package: PowerPAK? TSC75-6
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封裝: PowerPAK? TSC-75-6 |
庫存6,944 |
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Vishay Siliconix |
IC REG LIN POS ADJ 150MA TSOT23
- Output Configuration: Positive
- Output Type: Adjustable
- Number of Regulators: 1
- Voltage - Input (Max): 6V
- Voltage - Output (Min/Fixed): 1.5V
- Voltage - Output (Max): 5V
- Voltage Dropout (Max): 0.22V @ 150mA
- Current - Output: 150mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 900µA
- PSRR: 60dB ~ 30dB (1kHz ~ 100kHz)
- Control Features: Enable
- Protection Features: Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: SOT-23-5 Thin, TSOT-23-5
- Supplier Device Package: TSOT-23-5
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封裝: SOT-23-5 Thin, TSOT-23-5 |
庫存76,560 |
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Vishay Siliconix |
IC ANALOG SWITCH CMOS 8DIP
- Switch Circuit: SPST - NO
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 1
- On-State Resistance (Max): 20 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): 2.7 V ~ 12 V
- Voltage - Supply, Dual (V±): ±3 V ~ 6 V
- Switch Time (Ton, Toff) (Max): 43ns, 31ns
- -3db Bandwidth: -
- Charge Injection: 1pC
- Channel Capacitance (CS(off), CD(off)): 5pF
- Current - Leakage (IS(off)) (Max): 1nA
- Crosstalk: -71dB @ 1MHz
- Operating Temperature: -55°C ~ 125°C (TA)
- Package / Case: 8-CDIP (0.300", 7.62mm)
- Supplier Device Package: 8-CERDIP
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封裝: 8-CDIP (0.300", 7.62mm) |
庫存7,648 |
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Vishay Siliconix |
IC MULTIPLEXER 16X1 28PLCC
- Switch Circuit: -
- Multiplexer/Demultiplexer Circuit: 8:1
- Number of Circuits: 2
- On-State Resistance (Max): 100 Ohm
- Channel-to-Channel Matching (ΔRon): 5 Ohm
- Voltage - Supply, Single (V+): 12V
- Voltage - Supply, Dual (V±): ±5 V ~ 20 V
- Switch Time (Ton, Toff) (Max): 200ns, 150ns
- -3db Bandwidth: -
- Charge Injection: 15pC
- Channel Capacitance (CS(off), CD(off)): 8pF, 65pF
- Current - Leakage (IS(off)) (Max): 500pA
- Crosstalk: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 28-LCC (J-Lead)
- Supplier Device Package: 28-PLCC (11.51x11.51)
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封裝: 28-LCC (J-Lead) |
庫存7,456 |
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Vishay Siliconix |
IC SWITCH LV SPDT 8SOIC
- Switch Circuit: SPDT
- Multiplexer/Demultiplexer Circuit: 2:1
- Number of Circuits: 1
- On-State Resistance (Max): 60 Ohm
- Channel-to-Channel Matching (ΔRon): 400 mOhm
- Voltage - Supply, Single (V+): 2.7 V ~ 5 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 75ns, 50ns
- -3db Bandwidth: -
- Charge Injection: 2pC
- Channel Capacitance (CS(off), CD(off)): 7pF
- Current - Leakage (IS(off)) (Max): 100pA
- Crosstalk: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存5,600 |
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Vishay Siliconix |
IC MUX CMOS ANG DUAL 8CH 16SOIC
- Switch Circuit: -
- Multiplexer/Demultiplexer Circuit: 8:1
- Number of Circuits: 1
- On-State Resistance (Max): 100 Ohm
- Channel-to-Channel Matching (ΔRon): 15 Ohm (Max)
- Voltage - Supply, Single (V+): 12V
- Voltage - Supply, Dual (V±): ±5 V ~ 20 V
- Switch Time (Ton, Toff) (Max): 150ns, 150ns
- -3db Bandwidth: -
- Charge Injection: 20pC
- Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
- Current - Leakage (IS(off)) (Max): 500pA
- Crosstalk: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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封裝: 16-SOIC (0.154", 3.90mm Width) |
庫存390,288 |
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Vishay Siliconix |
IC SWITCH QUAD SPST 16-SOIC
- Switch Circuit: SPST - NO
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 26 Ohm
- Channel-to-Channel Matching (ΔRon): 100 mOhm
- Voltage - Supply, Single (V+): 3 V ~ 16 V
- Voltage - Supply, Dual (V±): ±3 V ~ 8 V
- Switch Time (Ton, Toff) (Max): 60ns, 35ns
- -3db Bandwidth: -
- Charge Injection: 6.6pC
- Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
- Current - Leakage (IS(off)) (Max): 1nA
- Crosstalk: -114dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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封裝: 16-SOIC (0.154", 3.90mm Width) |
庫存4,816 |
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Vishay Siliconix |
IC ANALOG SWITCH CMOS 8SOIC
- Switch Circuit: SPDT
- Multiplexer/Demultiplexer Circuit: 2:1
- Number of Circuits: 1
- On-State Resistance (Max): 20 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): 2.7 V ~ 12 V
- Voltage - Supply, Dual (V±): ±3 V ~ 6 V
- Switch Time (Ton, Toff) (Max): 43ns, 31ns
- -3db Bandwidth: -
- Charge Injection: 1pC
- Channel Capacitance (CS(off), CD(off)): 5pF
- Current - Leakage (IS(off)) (Max): 1nA
- Crosstalk: -71dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存29,280 |
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Vishay Siliconix |
IC SWITCH QUAD SPST 16-SOIC
- Switch Circuit: SPST - NO/NC
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 26 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): 3 V ~ 16 V
- Voltage - Supply, Dual (V±): ±3 V ~ 8 V
- Switch Time (Ton, Toff) (Max): 50ns, 30ns
- -3db Bandwidth: -
- Charge Injection: 6.6pC
- Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
- Current - Leakage (IS(off)) (Max): 1nA
- Crosstalk: -114dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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封裝: 16-SOIC (0.154", 3.90mm Width) |
庫存46,074 |
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