Rohm Semiconductor 產品

RCJ120N20TL

Rohm Semiconductor

MOSFET N-CH 200V 12A LPT

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.25V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
• Rds On (Max) @ Id, Vgs: 325 mOhm @ 6A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LPTS (SC-83)
• Package / Case: SC-83

封裝: SC-83

RZL035P01TR

Rohm Semiconductor

MOSFET P-CH 12V 3.5A TUMT6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 6V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 36 mOhm @ 3.5A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TUMT6
• Package / Case: 6-SMD, Flat Leads

封裝: 6-SMD, Flat Leads

DTA114EKAT146

Rohm Semiconductor

TRANS PREBIAS PNP 200MW SMT3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SMT3

封裝: TO-236-3, SC-59, SOT-23-3

BD25IC0WHFV-GTR

Rohm Semiconductor

IC REG LINEAR 2.5V 1A 6HVSOF

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.6V @ 1A
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 0.25mA ~ 0.5mA
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Soft Start
• Operating Temperature: -25°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, Flat Lead Exposed Pad
• Supplier Device Package: 6-HVSOF

封裝: 6-SMD, Flat Lead Exposed Pad

BU4344F-TR

Rohm Semiconductor

IC DETECTOR VOLT 4.4V CMOS 4SOP

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active Low
• Reset Timeout: Adjustable/Selectable
• Voltage - Threshold: 4.4V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-82
• Supplier Device Package: 4-SOP

封裝: SC-82

BD4845FVE-TR

Rohm Semiconductor

IC DETECTOR VOLT 4.5V ODRN 5VSOF

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: -
• Voltage - Threshold: 4.5V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOT-665
• Supplier Device Package: 5-VSOF

封裝: SOT-665

BR93L86RFVT-WE2

Rohm Semiconductor

IC EEPROM 16KBIT 2MHZ 8TSSOP-B

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 16Kb (1K x 16)
• Memory Interface: SPI
• Clock Frequency: 2MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 8-TSSOP-B

封裝: 8-TSSOP (0.173", 4.40mm Width)

BU7462F-E2

Rohm Semiconductor

IC OPAMP GP 1MHZ 8SOP

• Amplifier Type: General Purpose
• Number of Circuits: 2
• Output Type: -
• Slew Rate: 1 V/µs
• Gain Bandwidth Product: 1MHz
• -3db Bandwidth: -
• Current - Input Bias: 1pA
• Voltage - Input Offset: 1mV
• Current - Supply: 300µA
• Current - Output / Channel: 12mA
• Voltage - Supply, Single/Dual (±): 1.7 V ~ 5.5 V, ±0.85 V ~ 2.75 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.173", 4.40mm Width)
• Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.173", 4.40mm Width)

MNR14ERAPJ393

Rohm Semiconductor

RES ARRAY 4 RES 39K OHM 1206

• Circuit Type: Isolated
• Resistance (Ohms): 39k
• Tolerance: ±5%
• Number of Resistors: 4
• Number of Pins: 8
• Power Per Element: 62.5mW
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Applications: -
• Mounting Type: Surface Mount
• Package / Case: 1206 (3216 Metric), Convex, Long Side Terminals
• Supplier Device Package: -
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.024" (0.60mm)

封裝: 1206 (3216 Metric), Convex, Long Side Terminals

MCR10EZPJ110

Rohm Semiconductor

RES SMD 11 OHM 5% 1/8W 0805

• Resistance: 11 Ohms
• Tolerance: ±5%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0805 (2012 Metric)

MCR10EZPF5621

Rohm Semiconductor

RES SMD 5.62K OHM 1% 1/8W 0805

• Resistance: 5.62 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0805 (2012 Metric)

MCR006YZPJ123

Rohm Semiconductor

RES SMD 12K OHM 5% 1/20W 0201

• Resistance: 12 kOhms
• Tolerance: ±5%
• Power (Watts): 0.05W, 1/20W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0201
• Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
• Height - Seated (Max): 0.010" (0.26mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0201 (0603 Metric)

MCR006YZPF1501

Rohm Semiconductor

RES SMD 1.5K OHM 1% 1/20W 0201

• Resistance: 1.5 kOhms
• Tolerance: ±1%
• Power (Watts): 0.05W, 1/20W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0201
• Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
• Height - Seated (Max): 0.010" (0.26mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0201 (0603 Metric)

MCR03EZPFX1501

Rohm Semiconductor

RES SMD 1.5K OHM 1% 1/10W 0603

• Resistance: 1.5 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0603 (1608 Metric)

LTR50UZPJ131

Rohm Semiconductor

RES SMD 130 OHM 1W 2010 WIDE

• Resistance: 130 Ohms
• Tolerance: ±5%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: Wide 2010 (5025 Metric), 1020
• Supplier Device Package: 2010
• Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: Wide 2010 (5025 Metric), 1020

KTR25JZPJ223

Rohm Semiconductor

RES SMD 22K OHM 5% 1/3W 1210

• Resistance: 22 kOhms
• Tolerance: ±5%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 1210 (3225 Metric)

TRR10EZPF3012

Rohm Semiconductor

RES SMD 30.1K OHM 1% 1/8W 0805

• Resistance: 30.1 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Anti-Sulfur
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0805 (2012 Metric)

ESR03EZPJ684

Rohm Semiconductor

RES SMD 680K OHM 5% 1/4W 0603

• Resistance: 680 kOhms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0603 (1608 Metric)

KTR03EZPF1303

Rohm Semiconductor

RES SMD 130K OHM 1% 1/10W 0603

• Resistance: 130 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0603 (1608 Metric)

MCR18ERTF1624

Rohm Semiconductor

RES SMD 1.62M OHM 1% 1/4W 1206

• Resistance: 1.62 MOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 1206 (3216 Metric)

MCR006YRTF8201

Rohm Semiconductor

RES SMD 8.2K OHM 1% 1/20W 0201

• Resistance: 8.2 kOhms
• Tolerance: ±1%
• Power (Watts): 0.05W, 1/20W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0201
• Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
• Height - Seated (Max): 0.010" (0.26mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0201 (0603 Metric)

UCR03EVPFSR075

Rohm Semiconductor

RES SMD 0.075 OHM 1% 1/4W 0603

• Resistance: 75 mOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Current Sense
• Temperature Coefficient: 0/ +200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.034" W (1.60mm x 0.87mm)
• Height - Seated (Max): 0.024" (0.60mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: 0603 (1608 Metric)

PML100HZPJV1L0

Rohm Semiconductor

RES SMD 0.001 OHM 2W 2512 WIDE

• Resistance: 1 mOhms
• Tolerance: ±5%
• Power (Watts): 2W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Current Sense
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: Wide 2512 (6432 Metric), 1225
• Supplier Device Package: 2512
• Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

封裝: Wide 2512 (6432 Metric), 1225

BR93G56F-3AGTE2

Rohm Semiconductor

MICROWIRE BUS 2KBIT(128X16BIT) E

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 2Kb (128 x 16)
• Memory Interface: SPI
• Clock Frequency: 3MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.173", 4.40mm Width)
• Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.173", 4.40mm Width)

BD49101ARFS-ME2

Rohm Semiconductor

MULTI-CHANNEL POWER SUPPLY IC FO

• Applications: Automotive
• Current - Supply: 5mA
• Voltage - Supply: 5.5 V ~ 25 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 44-VSOP (0.295", 7.50mm Width) Exposed Pad
• Supplier Device Package: HTSSOP-A44R

封裝: 44-VSOP (0.295", 7.50mm Width) Exposed Pad

2SB1443TV2P

Rohm Semiconductor

TRANS GP BJT PNP 50V 2A 3-PIN AT

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2 A
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
• Power - Max: 1 W
• Frequency - Transition: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 3-SIP
• Supplier Device Package: ATV

封裝: -

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BV1HD045EFJ-CE2

Rohm Semiconductor

AUTOMOTIVE 1CH 45 M HIGH-SIDE SW

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: Logic
• Voltage - Load: 6V ~ 28V
• Voltage - Supply (Vcc/Vdd): 7V
• Current - Output (Max): 21A
• Rds On (Typ): 45mOhm
• Input Type: Non-Inverting
• Features: Slew Rate Controlled
• Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: 8-HTSOP-J

封裝: -

DTC123JU3HZGT106

Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A UMT3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 2.2 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250 MHz
• Power - Max: 200 mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: UMT3

封裝: -