Alpha and Omega Semiconductor Ltd. has released the 600V aMOS7 Super Junction mosfet series. The device is the company's next generation high voltage MosFeTs designed to meet high efficiency and high density requirements for telecommunication rectifiers, solar inverters, servers, workstations, electric vehicle charging, motor drives and industrial power applications. Today's server power requires titanium efficiency, which indicates a peak efficiency of more than 98.5% for the PFC and LLC grades. Active bridge and bridgless design are easy to implement solutions; However, switching and drive losses, especially under light loads, have been a major problem for designers.
Existing technologies, limited by large battery spacing and charging, can barely meet this demand. The new generation of SJ technology requires less charge, but also needs to be robust enough. In transient and abnormal situations, low Qrr and Trr for LLC and PSFB applications are also necessary, and new devices are the most suitable answer to the above requirements. Low-ohmic SMD devices are becoming the new standard for solar applications, seeking to reduce the form factor by employing 3D mechanical and thermal design.
The device is offered in a wide range of Rdson size and SMD package options, including DFN, TOLL and Top-cooling variants. For low Fsw applications, including ssr or active Bridges, FETs must meet specific SOA requirements to maintain surges and surges. The device provides a low rderson temperature coefficient, as well as robustness to transient voltage and current overstress. The first product released, AOK050V60A7, is a 600V 50mOhm low ohm device in the industry standard TO-247 package, tailored for today's high power AC/DC, DC-DC and solar inverter stages.
With EU ERP Lot9 regulation increasing the efficiency of a single psu to the titanium level, the series provides outstanding solutions for single, staggered, dual boost, totem poles and Vienna PFCS, as well as other hard switching topologies. The product's optimized capacitors will provide customers with superior switching performance with fast on/off behavior while avoiding the risk of self-opening or penetration. The 50mohm device will be followed by 32mOhm, 40mOhm, 65mOhm and 105mOhm devices.
"The new charge-balanced structure makes it possible to reduce the active area by a further 50% compared to aMOS5(our existing solution). Overall, aMOS7 is an industry-leading high-voltage SJ solution designed to address both efficiency-driven and cost-driven markets, "said Richard Zhang, Senior Director, AOS Product line and Global Power Business.
