頁 33 - 電晶體 - FET、MOSFET - 陣列 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF8910GTRPBF	Infineon Technologies	MOSFET 2N-CH 20V 10A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存564,096	Logic Level Gate	20V	10A	13.4 mOhm @ 10A, 10V	2.55V @ 250µA	11nC @ 4.5V	960pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF9953PBF	Infineon Technologies	MOSFET 2P-CH 30V 2.3A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存4,320	Standard	30V	2.3A	250 mOhm @ 1A, 10V	1V @ 250µA	12nC @ 10V	190pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
PMDPB38UNE,115	NXP	MOSFET 2N-CH 20V 4A HUSON6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 46 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V Power - Max: 510mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020-6	封裝: 6-UDFN Exposed Pad	庫存2,064	Logic Level Gate	20V	4A	46 mOhm @ 3A, 4.5V	1V @ 250µA	4.4nC @ 4.5V	268pF @ 10V	510mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	DFN2020-6
AON6928	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 17A/30A 8DFN FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A, 30A Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V Power - Max: 3.6W, 4.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN (5x6)	封裝: 8-PowerVDFN	庫存4,192	Logic Level Gate	30V	17A, 30A	8.2 mOhm @ 20A, 10V	2.5V @ 250µA	24nC @ 10V	1150pF @ 15V	3.6W, 4.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN (5x6)
SI4913DY-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 7.1A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.1A Rds On (Max) @ Id, Vgs: 15 mOhm @ 9.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存57,828	Logic Level Gate	20V	7.1A	15 mOhm @ 9.4A, 4.5V	1V @ 500µA	65nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTC80DDA15T3G	Microsemi Corporation	MOSFET 2N-CH 800V 28A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 28A Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V Power - Max: 277W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	封裝: SP3	庫存6,752	Standard	800V	28A	150 mOhm @ 14A, 10V	3.9V @ 2mA	180nC @ 10V	4507pF @ 25V	277W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
FMM22-06PF	IXYS	MOSFET 2N-CH 600V 12A I4-PAC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A Rds On (Max) @ Id, Vgs: 350 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Power - Max: 130W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 Supplier Device Package: ISOPLUS i4-PAC?	封裝: i4-Pac?-5	庫存7,632	Standard	600V	12A	350 mOhm @ 11A, 10V	5V @ 1mA	58nC @ 10V	3600pF @ 25V	130W	-55°C ~ 150°C (TJ)	Through Hole	i4-Pac?-5	ISOPLUS i4-PAC?
SI7962DP-T1-E3	Vishay Siliconix	MOSFET 2N-CH 40V 7.1A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7.1A Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封裝: PowerPAK? SO-8 Dual	庫存4,640	Standard	40V	7.1A	17 mOhm @ 11.1A, 10V	4.5V @ 250µA	70nC @ 10V	-	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
NVMFD5483NLT1G	ON Semiconductor	MOSFET 2N-CH 60V 6.4A 8DFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.4A Rds On (Max) @ Id, Vgs: 36 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 25V Power - Max: 3.1W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	封裝: 8-PowerTDFN	庫存3,296	Logic Level Gate	60V	6.4A	36 mOhm @ 15A, 10V	2.5V @ 250µA	23.4nC @ 10V	668pF @ 25V	3.1W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
QS8K21TR	Rohm Semiconductor	MOSFET 2N-CH 45V 4A TSMT8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 53 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Power - Max: 550mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	封裝: 8-SMD, Flat Lead	庫存4,608	Logic Level Gate	45V	4A	53 mOhm @ 4A, 10V	2.5V @ 1mA	5.4nC @ 5V	460pF @ 10V	550mW	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
AO4806	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 9.4A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存913,668	Logic Level Gate	20V	-	14 mOhm @ 9.4A, 10V	1V @ 250µA	17.9nC @ 4.5V	1810pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMC3016LDV-13	Diodes Incorporated	MOSFET BVDSS: 31V 40V POWERDI333 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Tc), 15A (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V Power - Max: 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8	封裝: 8-PowerVDFN	庫存6,992	Standard	30V	21A (Tc), 15A (Tc)	12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V	2.4V @ 250µA	9.5nC @ 4.5V	1184pF @ 15V, 1188pF @ 15V	900mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8
TSM680P06DPQ56 RLG	TSC America Inc.	MOSFET, DUAL, P-CHANNEL, -60V, - FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 68 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 30V Power - Max: 3.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFN (5x6)	封裝: 8-PowerTDFN	庫存6,640	Standard	60V	12A (Tc)	68 mOhm @ 6A, 10V	2.5V @ 250µA	16.4nC @ 10V	870pF @ 30V	3.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-PDFN (5x6)
TT8J21TR	Rohm Semiconductor	MOSFET 2P-CH 20V 2.5A TSST8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 68 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 10V Power - Max: 650mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-TSST	封裝: 8-SMD, Flat Lead	庫存730,380	Logic Level Gate	20V	2.5A	68 mOhm @ 2.5A, 4.5V	1V @ 1mA	12nC @ 4.5V	1270pF @ 10V	650mW	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-TSST
IRF7905TRPBF	Infineon Technologies	MOSFET 2N-CH 30V 7.8A/8.9A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A Rds On (Max) @ Id, Vgs: 21.8 mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 2.25V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存617,328	Logic Level Gate	30V	7.8A, 8.9A	21.8 mOhm @ 7.8A, 10V	2.25V @ 25µA	6.9nC @ 4.5V	600pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMS3610S	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 17.5A/30A 8-MLP FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 17.5A, 30A Rds On (Max) @ Id, Vgs: 5 mOhm @ 17.5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	封裝: 8-PowerTDFN	庫存7,376	Logic Level Gate	25V	17.5A, 30A	5 mOhm @ 17.5A, 10V	2V @ 250µA	26nC @ 10V	1570pF @ 13V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
NTHD4502NT1G	ON Semiconductor	MOSFET 2N-CH 30V 2.2A CHIPFET FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.2A Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 15V Power - Max: 640mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	封裝: 8-SMD, Flat Lead	庫存409,524	Logic Level Gate	30V	2.2A	85 mOhm @ 2.9A, 10V	3V @ 250µA	7nC @ 10V	140pF @ 15V	640mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
DMC3730UFL3-7	Diodes Incorporated	MOSFET N/P-CHA 30V 1.1A DFN1310 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.1A, 700mA Rds On (Max) @ Id, Vgs: 460 mOhm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 65.9pF @ 25V Power - Max: 390mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Supplier Device Package: X2-DFN1310-6	封裝: 6-XFDFN	庫存6,048	Standard	30V	1.1A, 700mA	460 mOhm @ 200mA, 4.5V	950mV @ 250µA	0.9nC @ 4.5V	65.9pF @ 25V	390mW	-55°C ~ 150°C (TJ)	Surface Mount	6-XFDFN	X2-DFN1310-6
PMGD290UCEAX	Nexperia USA Inc.	MOSFET N/P-CH 20V 6TSSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 725mA, 500mA Rds On (Max) @ Id, Vgs: 380 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V Power - Max: 280mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封裝: 6-TSSOP, SC-88, SOT-363	庫存43,200	Logic Level Gate	20V	725mA, 500mA	380 mOhm @ 500mA, 4.5V	1.3V @ 250µA	0.68nC @ 4.5V	83pF @ 10V	280mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
DMN62D2UDWQ-7	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT363 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: -	Request a Quote	-	60V	340mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	0.8nC @ 4.5V	41pF @ 30V	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
KFCAB21490L	Nuvoton Technology Corporation	DUAL NCH MOSFET 12V, 13.5A, 2.2M FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1.11mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 3570pF @ 10V Power - Max: 540mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Supplier Device Package: 10-SMD	封裝: -	Request a Quote	-	12V	13.5A (Ta)	2.75mOhm @ 6A, 4.5V	1.4V @ 1.11mA	25nC @ 4V	3570pF @ 10V	540mW (Ta)	150°C	Surface Mount	10-SMD, No Lead	10-SMD
MCMNP2065-TP	Micro Commercial Co	MOSFET N/P-CH 20V 6A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 4.5V, 42mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.05nC @ 4.5V, 10.98nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 418pF @ 10V, 1010pF @ 10V Power - Max: 2.2W, 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: DFN2020-6L	封裝: -	庫存5,148	-	20V	6A (Ta)	25mOhm @ 5A, 4.5V, 42mOhm @ 5A, 4.5V	1V @ 250µA	6.05nC @ 4.5V, 10.98nC @ 4.5V	418pF @ 10V, 1010pF @ 10V	2.2W, 1.8W	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	DFN2020-6L
MSCSM120VR1M31C1AG	Microchip Technology	SIC 2N-CH 1200V 89A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Power - Max: 395W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封裝: -	Request a Quote	-	1200V (1.2kV)	89A (Tc)	31mOhm @ 40A, 20V	2.8V @ 3mA	232nC @ 20V	3020pF @ 1000V	395W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
ECH8667-TL-HX-SA	Sanyo	MOSFET P-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
BSS138DW-7-F-79	Diodes Incorporated	MOSFET 2N-CH 50V 0.2A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 200mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: -	Request a Quote	-	50V	200mA (Ta)	3.5Ohm @ 220mA, 10V	1.5V @ 250µA	-	50pF @ 10V	200mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
ECH8604-TL-E-SY	Sanyo	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMP31D7LDW-7	Diodes Incorporated	MOSFET 2P-CH 0.55A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: -	庫存8,541	-	-	550mA (Ta)	900mOhm @ 420mA, 10V	2.6V @ 250µA	-	-	-	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
US6J12TCR	Rohm Semiconductor	MOSFET 2P-CH 12V 2A TUMT6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 6V Power - Max: 910mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: TUMT6	封裝: -	庫存8,700	-	12V	2A (Ta)	105mOhm @ 2A, 4.5V	1V @ 1mA	7.6nC @ 4.5V	850pF @ 6V	910mW (Ta)	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	TUMT6
SI7501DN-T1-E3	Vishay Siliconix	MOSFET N/P-CH 30V 5.4A 1212-8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A Rds On (Max) @ Id, Vgs: 35mOhm @ 7.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.6W Operating Temperature: - Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Dual Supplier Device Package: PowerPAK® 1212-8 Dual	封裝: -	Request a Quote	Logic Level Gate	30V	5.4A, 4.5A	35mOhm @ 7.7A, 10V	3V @ 250µA	14nC @ 10V	-	1.6W	-	Surface Mount	PowerPAK® 1212-8 Dual	PowerPAK® 1212-8 Dual
NVMFD016N06CT1G	onsemi	MOSFET 2N-CH 60V 9A/32A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V Power - Max: 3.1W (Ta), 36W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	封裝: -	Request a Quote	-	60V	9A (Ta), 32A (Tc)	16.3mOhm @ 5A, 10V	4V @ 25µA	6.9nC @ 10V	489pF @ 30V	3.1W (Ta), 36W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)

IRF8910GTRPBF

Infineon Technologies

MOSFET 2N-CH 20V 10A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存564,096

Logic Level Gate

20V

10A

13.4 mOhm @ 10A, 10V

2.55V @ 250µA

11nC @ 4.5V

960pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF9953PBF

Infineon Technologies

MOSFET 2P-CH 30V 2.3A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存4,320

Standard

30V

2.3A

250 mOhm @ 1A, 10V

1V @ 250µA

12nC @ 10V

190pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

PMDPB38UNE,115

NXP

MOSFET 2N-CH 20V 4A HUSON6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 46 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
Power - Max: 510mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020-6

封裝: 6-UDFN Exposed Pad

庫存2,064

Logic Level Gate

20V

4A

46 mOhm @ 3A, 4.5V

1V @ 250µA

4.4nC @ 4.5V

268pF @ 10V

510mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

DFN2020-6

AON6928

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 17A/30A 8DFN

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 30A
Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
Power - Max: 3.6W, 4.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)

封裝: 8-PowerVDFN

庫存4,192

Logic Level Gate

30V

17A, 30A

8.2 mOhm @ 20A, 10V

2.5V @ 250µA

24nC @ 10V

1150pF @ 15V

3.6W, 4.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-DFN (5x6)

SI4913DY-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 7.1A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.1A
Rds On (Max) @ Id, Vgs: 15 mOhm @ 9.4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存57,828

Logic Level Gate

20V

7.1A

15 mOhm @ 9.4A, 4.5V

1V @ 500µA

65nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTC80DDA15T3G

Microsemi Corporation

MOSFET 2N-CH 800V 28A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Power - Max: 277W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

封裝: SP3

庫存6,752

Standard

800V

28A

150 mOhm @ 14A, 10V

3.9V @ 2mA

180nC @ 10V

4507pF @ 25V

277W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

FMM22-06PF

IXYS

MOSFET 2N-CH 600V 12A I4-PAC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 350 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Power - Max: 130W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac?-5
Supplier Device Package: ISOPLUS i4-PAC?

封裝: i4-Pac?-5

庫存7,632

Standard

600V

12A

350 mOhm @ 11A, 10V

5V @ 1mA

58nC @ 10V

3600pF @ 25V

130W

-55°C ~ 150°C (TJ)

Through Hole

i4-Pac?-5

ISOPLUS i4-PAC?

SI7962DP-T1-E3

Vishay Siliconix

MOSFET 2N-CH 40V 7.1A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.1A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.1A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封裝: PowerPAK? SO-8 Dual

庫存4,640

Standard

40V

7.1A

17 mOhm @ 11.1A, 10V

4.5V @ 250µA

70nC @ 10V

-

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

NVMFD5483NLT1G

ON Semiconductor

MOSFET 2N-CH 60V 6.4A 8DFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.4A
Rds On (Max) @ Id, Vgs: 36 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 25V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

封裝: 8-PowerTDFN

庫存3,296

Logic Level Gate

60V

6.4A

36 mOhm @ 15A, 10V

2.5V @ 250µA

23.4nC @ 10V

668pF @ 25V

3.1W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

QS8K21TR

Rohm Semiconductor

MOSFET 2N-CH 45V 4A TSMT8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 53 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Power - Max: 550mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

封裝: 8-SMD, Flat Lead

庫存4,608

Logic Level Gate

45V

4A

53 mOhm @ 4A, 10V

2.5V @ 1mA

5.4nC @ 5V

460pF @ 10V

550mW

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

AO4806

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 9.4A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存913,668

Logic Level Gate

20V

-

14 mOhm @ 9.4A, 10V

1V @ 250µA

17.9nC @ 4.5V

1810pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DMC3016LDV-13

Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI333

FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc), 15A (Tc)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V
Power - Max: 900mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8

封裝: 8-PowerVDFN

庫存6,992

Standard

30V

21A (Tc), 15A (Tc)

12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V

2.4V @ 250µA

9.5nC @ 4.5V

1184pF @ 15V, 1188pF @ 15V

900mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8

TSM680P06DPQ56 RLG

TSC America Inc.

MOSFET, DUAL, P-CHANNEL, -60V, -

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 68 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 30V
Power - Max: 3.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFN (5x6)

封裝: 8-PowerTDFN

庫存6,640

Standard

60V

12A (Tc)

68 mOhm @ 6A, 10V

2.5V @ 250µA

16.4nC @ 10V

870pF @ 30V

3.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-PDFN (5x6)

TT8J21TR

Rohm Semiconductor

MOSFET 2P-CH 20V 2.5A TSST8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 68 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 10V
Power - Max: 650mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-TSST

封裝: 8-SMD, Flat Lead

庫存730,380

Logic Level Gate

20V

2.5A

68 mOhm @ 2.5A, 4.5V

1V @ 1mA

12nC @ 4.5V

1270pF @ 10V

650mW

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-TSST

IRF7905TRPBF

Infineon Technologies

MOSFET 2N-CH 30V 7.8A/8.9A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A
Rds On (Max) @ Id, Vgs: 21.8 mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存617,328

Logic Level Gate

30V

7.8A, 8.9A

21.8 mOhm @ 7.8A, 10V

2.25V @ 25µA

6.9nC @ 4.5V

600pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMS3610S

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 17.5A/30A 8-MLP

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 17.5A, 30A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

封裝: 8-PowerTDFN

庫存7,376

Logic Level Gate

25V

17.5A, 30A

5 mOhm @ 17.5A, 10V

2V @ 250µA

26nC @ 10V

1570pF @ 13V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

NTHD4502NT1G

ON Semiconductor

MOSFET 2N-CH 30V 2.2A CHIPFET

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 15V
Power - Max: 640mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: ChipFET?

封裝: 8-SMD, Flat Lead

庫存409,524

Logic Level Gate

30V

2.2A

85 mOhm @ 2.9A, 10V

3V @ 250µA

7nC @ 10V

140pF @ 15V

640mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

ChipFET?

DMC3730UFL3-7

Diodes Incorporated

MOSFET N/P-CHA 30V 1.1A DFN1310

FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.1A, 700mA
Rds On (Max) @ Id, Vgs: 460 mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 65.9pF @ 25V
Power - Max: 390mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Supplier Device Package: X2-DFN1310-6

封裝: 6-XFDFN

庫存6,048

Standard

30V

1.1A, 700mA

460 mOhm @ 200mA, 4.5V

950mV @ 250µA

0.9nC @ 4.5V

65.9pF @ 25V

390mW

-55°C ~ 150°C (TJ)

Surface Mount

6-XFDFN

X2-DFN1310-6

PMGD290UCEAX

Nexperia USA Inc.

MOSFET N/P-CH 20V 6TSSOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 725mA, 500mA
Rds On (Max) @ Id, Vgs: 380 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
Power - Max: 280mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封裝: 6-TSSOP, SC-88, SOT-363

庫存43,200

Logic Level Gate

20V

725mA, 500mA

380 mOhm @ 500mA, 4.5V

1.3V @ 250µA

0.68nC @ 4.5V

83pF @ 10V

280mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

DMN62D2UDWQ-7

Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT363 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Power - Max: 300mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: -

Request a Quote

-

60V

340mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

0.8nC @ 4.5V

41pF @ 30V

300mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

KFCAB21490L

Nuvoton Technology Corporation

DUAL NCH MOSFET 12V, 13.5A, 2.2M

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 1.11mA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 3570pF @ 10V
Power - Max: 540mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Supplier Device Package: 10-SMD

封裝: -

Request a Quote

-

12V

13.5A (Ta)

2.75mOhm @ 6A, 4.5V

1.4V @ 1.11mA

25nC @ 4V

3570pF @ 10V

540mW (Ta)

150°C

Surface Mount

10-SMD, No Lead

10-SMD

MCMNP2065-TP

Micro Commercial Co

MOSFET N/P-CH 20V 6A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 4.5V, 42mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.05nC @ 4.5V, 10.98nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 418pF @ 10V, 1010pF @ 10V
Power - Max: 2.2W, 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: DFN2020-6L

封裝: -

庫存5,148

-

20V

6A (Ta)

25mOhm @ 5A, 4.5V, 42mOhm @ 5A, 4.5V

1V @ 250µA

6.05nC @ 4.5V, 10.98nC @ 4.5V

418pF @ 10V, 1010pF @ 10V

2.2W, 1.8W

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

DFN2020-6L

MSCSM120VR1M31C1AG

Microchip Technology

SIC 2N-CH 1200V 89A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Power - Max: 395W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封裝: -

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-

1200V (1.2kV)

89A (Tc)

31mOhm @ 40A, 20V

2.8V @ 3mA

232nC @ 20V

3020pF @ 1000V

395W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

ECH8667-TL-HX-SA

Sanyo

MOSFET P-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

BSS138DW-7-F-79

Diodes Incorporated

MOSFET 2N-CH 50V 0.2A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Power - Max: 200mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: -

Request a Quote

-

50V

200mA (Ta)

3.5Ohm @ 220mA, 10V

1.5V @ 250µA

-

50pF @ 10V

200mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

ECH8604-TL-E-SY

Sanyo

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

DMP31D7LDW-7

Diodes Incorporated

MOSFET 2P-CH 0.55A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: -

庫存8,541

-

550mA (Ta)

900mOhm @ 420mA, 10V

2.6V @ 250µA

-

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

US6J12TCR

Rohm Semiconductor

MOSFET 2P-CH 12V 2A TUMT6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 6V
Power - Max: 910mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: TUMT6

封裝: -

庫存8,700

-

12V

2A (Ta)

105mOhm @ 2A, 4.5V

1V @ 1mA

7.6nC @ 4.5V

850pF @ 6V

910mW (Ta)

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

TUMT6

SI7501DN-T1-E3

Vishay Siliconix

MOSFET N/P-CH 30V 5.4A 1212-8

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A
Rds On (Max) @ Id, Vgs: 35mOhm @ 7.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.6W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual

封裝: -

Request a Quote

Logic Level Gate

30V

5.4A, 4.5A

35mOhm @ 7.7A, 10V

3V @ 250µA

14nC @ 10V

-

1.6W

-

Surface Mount

PowerPAK® 1212-8 Dual

NVMFD016N06CT1G

onsemi

MOSFET 2N-CH 60V 9A/32A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Power - Max: 3.1W (Ta), 36W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

封裝: -

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-

60V

9A (Ta), 32A (Tc)

16.3mOhm @ 5A, 10V

4V @ 25µA

6.9nC @ 10V

489pF @ 30V

3.1W (Ta), 36W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)