頁 34 - 電晶體 - FET、MOSFET - 陣列 | 離散半導體產品 | 黑森爾電子
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電晶體 - FET、MOSFET - 陣列

記錄 3,259
頁  34/109
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零件編號
製造商
描述
封裝
庫存
數量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRF7755TRPBF
Infineon Technologies

MOSFET 2P-CH 20V 3.9A 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A
  • Rds On (Max) @ Id, Vgs: 51 mOhm @ 3.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封裝: 8-TSSOP (0.173", 4.40mm Width)
庫存2,768
Logic Level Gate
20V
3.9A
51 mOhm @ 3.7A, 4.5V
1.2V @ 250µA
17nC @ 4.5V
1090pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot IRF5851TRPBF
Infineon Technologies

MOSFET N/P-CH 20V 2.7A 6-TSOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A, 2.2A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
  • Power - Max: 960mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
封裝: SOT-23-6 Thin, TSOT-23-6
庫存463,020
Logic Level Gate
20V
2.7A, 2.2A
90 mOhm @ 2.7A, 4.5V
1.25V @ 250µA
6nC @ 4.5V
400pF @ 15V
960mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
hot IRF8915TR
Infineon Technologies

MOSFET 2N-CH 20V 8.9A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8.9A
  • Rds On (Max) @ Id, Vgs: 18.3 mOhm @ 8.9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存60,000
Logic Level Gate
20V
8.9A
18.3 mOhm @ 8.9A, 10V
2.5V @ 250µA
7.4nC @ 4.5V
540pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot IRF7102
Infineon Technologies

MOSFET 2N-CH 50V 2A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存39,600
Standard
50V
2A
300 mOhm @ 1.5A, 10V
3V @ 250µA
6.6nC @ 10V
120pF @ 25V
2W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
APTM20DHM10G
Microsemi Corporation

MOSFET 2N-CH 200V 175A SP6

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 175A
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
  • Power - Max: 694W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
封裝: SP6
庫存3,920
Standard
200V
175A
12 mOhm @ 87.5A, 10V
5V @ 5mA
224nC @ 10V
13700pF @ 25V
694W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
hot AOD606
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 40V 8A TO252-4

  • FET Type: N and P-Channel, Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V
  • Power - Max: 1.6W, 1.7W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
  • Supplier Device Package: TO-252-4L
封裝: TO-252-5, DPak (4 Leads + Tab), TO-252AD
庫存639,144
Logic Level Gate
40V
8A
33 mOhm @ 8A, 10V
3V @ 250µA
9.2nC @ 10V
404pF @ 20V
1.6W, 1.7W
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-5, DPak (4 Leads + Tab), TO-252AD
TO-252-4L
hot FDW2508P
Fairchild/ON Semiconductor

MOSFET 2P-CH 12V 6A 8-TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2644pF @ 6V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封裝: 8-TSSOP (0.173", 4.40mm Width)
庫存302,952
Logic Level Gate
12V
6A
18 mOhm @ 6A, 4.5V
1.5V @ 250µA
36nC @ 4.5V
2644pF @ 6V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot SSD2007ATF
Fairchild/ON Semiconductor

MOSFET 2N-CH 50V 2A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存436,680
Logic Level Gate
50V
2A
300 mOhm @ 1.5A, 10V
4V @ 250µA
15nC @ 10V
-
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
FDG6322C_D87Z
Fairchild/ON Semiconductor

MOSFET N/P-CH 25V SC70-6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 220mA, 410mA
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
封裝: 6-TSSOP, SC-88, SOT-363
庫存4,672
Logic Level Gate
25V
220mA, 410mA
4 Ohm @ 220mA, 4.5V
1.5V @ 250µA
0.4nC @ 4.5V
9.5pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
APTM50DHM65T3G
Microsemi Corporation

MOSFET 2N-CH 500V 51A SP3

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 51A
  • Rds On (Max) @ Id, Vgs: 78 mOhm @ 42A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
封裝: SP3
庫存7,664
Standard
500V
51A
78 mOhm @ 42A, 10V
5V @ 2.5mA
340nC @ 10V
10800pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
ALD210800PCL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 0.08A 16DIP

  • FET Type: 4 N-Channel, Matched Pair
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 80mA
  • Rds On (Max) @ Id, Vgs: 25 Ohm
  • Vgs(th) (Max) @ Id: 20mV @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
封裝: 16-DIP (0.300", 7.62mm)
庫存6,896
Logic Level Gate
10.6V
80mA
25 Ohm
20mV @ 10µA
-
15pF @ 5V
500mW
0°C ~ 70°C (TJ)
Through Hole
16-DIP (0.300", 7.62mm)
16-PDIP
CSD88584Q5DC
Texas Instruments

MOSFET ARRAY 2N-CH 40A 22VSON

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 0.95 mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 88nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 12400pF @ 20V
  • Power - Max: 12W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 22-PowerTFDFN
  • Supplier Device Package: 22-VSON-CLIP (5x6)
封裝: 22-PowerTFDFN
庫存7,344
Standard
40V
-
0.95 mOhm @ 30A, 10V
2.3V @ 250µA
88nC @ 4.5V
12400pF @ 20V
12W
-55°C ~ 150°C (TJ)
Surface Mount
22-PowerTFDFN
22-VSON-CLIP (5x6)
NVMFD5483NLT1G
ON Semiconductor

MOSFET 2N-CH 60V 6.4A 8DFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 25V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
封裝: 8-PowerTDFN
庫存3,296
Logic Level Gate
60V
6.4A
36 mOhm @ 15A, 10V
2.5V @ 250µA
23.4nC @ 10V
668pF @ 25V
3.1W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
DMC3016LNS-7
Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI333

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 6.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V
  • Power - Max: 1.3W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8
封裝: 8-PowerVDFN
庫存4,048
Standard
30V
9A (Ta), 6.8A (Ta)
16 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V
2V @ 250µA
9.5nC @ 4.5V
1184pF @ 15V, 1188pF @ 15V
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8
NTLUD3A260PZTBG
ON Semiconductor

MOSFET 2P-CH 20V 1.3A UDFN6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFDFN Exposed Pad
  • Supplier Device Package: 6-UDFN (1.6x1.6)
封裝: 6-UFDFN Exposed Pad
庫存3,520
Logic Level Gate
20V
1.3A
200 mOhm @ 2A, 4.5V
1V @ 250µA
4.2nC @ 4.5V
300pF @ 10V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UFDFN Exposed Pad
6-UDFN (1.6x1.6)
STL36DN6F7
STMicroelectronics

DUAL N-CHANNEL 60 V 0.023 OHM TY

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V
  • Power - Max: 58W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerFlat? (5x6)
封裝: 8-PowerVDFN
庫存3,936
Standard
60V
33A (Tc)
27 mOhm @ 4.5A, 10V
4V @ 250µA
8nC @ 10V
420pF @ 30V
58W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PowerFlat? (5x6)
hot SH8M41TB1
Rohm Semiconductor

MOSFET N/P-CH 80V 3.4A/2.6A SOP8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存21,264
Logic Level Gate
80V
3.4A, 2.6A
130 mOhm @ 3.4A, 10V
2.5V @ 1mA
9.2nC @ 5V
600pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
CCS020M12CM2
Cree/Wolfspeed

MOSFET 6N-CH 1200V 29.5A MODULE

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 29.5A
  • Rds On (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id: 2.2V @ 1mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 61.5nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 800V
  • Power - Max: 167W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封裝: Module
庫存2,096
Standard
1200V (1.2kV)
29.5A
98 mOhm @ 20A, 20V
2.2V @ 1mA (Typ)
61.5nC @ 20V
900pF @ 800V
167W
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
hot CSD87588N
Texas Instruments

MOSFET 2N-CH 30V 25A 5PTAB

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A
  • Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 1.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 736pF @ 15V
  • Power - Max: 6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 5-XFLGA
  • Supplier Device Package: 5-PTAB (3x2.5)
封裝: 5-XFLGA
庫存118,620
Logic Level Gate
30V
25A
9.6 mOhm @ 15A, 10V
1.9V @ 250µA
4.1nC @ 4.5V
736pF @ 15V
6W
-55°C ~ 150°C (TJ)
Surface Mount
5-XFLGA
5-PTAB (3x2.5)
MCCD2005-TP
Micro Commercial Co

MOSFET 2N-CH 20V 8A

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WFDFN Exposed Pad
  • Supplier Device Package: DFN2030-6
封裝: 6-WFDFN Exposed Pad
庫存6,784
Standard
20V
8A
13 mOhm @ 8A, 10V
1V @ 250µA
17.9nC @ 4.5V
1800pF @ 10V
-
-55°C ~ 150°C (TJ)
Surface Mount
6-WFDFN Exposed Pad
DFN2030-6
hot MTM763200LBF
Panasonic Electronic Components

MOSFET N/P-CH 20V WSMINI6-F1

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.9A, 1.2A
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 1A, 4V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
  • Power - Max: 700mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: WSMini6-F1-B
封裝: 6-SMD, Flat Leads
庫存36,000
Standard
20V
1.9A, 1.2A
105 mOhm @ 1A, 4V
1.3V @ 1mA
-
280pF @ 10V
700mW
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
WSMini6-F1-B
hot SI1902CDL-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 1.1A SC-70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A
  • Rds On (Max) @ Id, Vgs: 235 mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
  • Power - Max: 420mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6 (SOT-363)
封裝: 6-TSSOP, SC-88, SOT-363
庫存370,368
Logic Level Gate
20V
1.1A
235 mOhm @ 1A, 4.5V
1.5V @ 250µA
3nC @ 10V
62pF @ 10V
420mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6 (SOT-363)
UT6J3TCR
Rohm Semiconductor

-20V PCH+PCH POWER MOSFET

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: HUML2020L8
封裝: 6-UDFN Exposed Pad
庫存24,978
-
20V
3A
85 mOhm @ 3A, 4.5V
1V @ 1mA
8.5nC @ 4.5V
2000pF @ 10V
2W
150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
HUML2020L8
hot DMN4034SSD-13
Diodes Incorporated

MOSFET 2N-CH 40V 4.8A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存5,488
Logic Level Gate
40V
4.8A
34 mOhm @ 6A, 10V
3V @ 250µA
18nC @ 10V
453pF @ 20V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SSM6L35FE,LM
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.18A/0.1A ES6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
封裝: SOT-563, SOT-666
庫存77,388
Logic Level Gate
20V
180mA, 100mA
3 Ohm @ 50mA, 4V
1V @ 1mA
-
9.5pF @ 3V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
hot SI5908DC-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 4.4A 1206-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
封裝: 8-SMD, Flat Lead
庫存334,068
Logic Level Gate
20V
4.4A
40 mOhm @ 4.4A, 4.5V
1V @ 250µA
7.5nC @ 4.5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
hot SI6954ADQ-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 3.1A 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A
  • Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封裝: 8-TSSOP (0.173", 4.40mm Width)
庫存9,696
Logic Level Gate
30V
3.1A
53 mOhm @ 3.4A, 10V
1V @ 250µA (Min)
16nC @ 10V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot TPS1120DR
Texas Instruments

MOSFET 2P-CH 15V 1.17A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 15V
  • Current - Continuous Drain (Id) @ 25°C: 1.17A
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 840mW
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存306,444
Logic Level Gate
15V
1.17A
180 mOhm @ 1.5A, 10V
1.5V @ 250µA
5.45nC @ 10V
-
840mW
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot ZXMN6A25DN8TA
Diodes Incorporated

MOSFET 2N-CH 60V 3.8A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.6A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存407,196
Logic Level Gate
60V
3.8A
50 mOhm @ 3.6A, 10V
1V @ 250µA (Min)
20.4nC @ 10V
1063pF @ 30V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot FDS6975
Fairchild/ON Semiconductor

MOSFET 2P-CH 30V 6A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 15V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存197,244
Logic Level Gate
30V
6A
32 mOhm @ 6A, 10V
3V @ 250µA
20nC @ 5V
1540pF @ 15V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO