頁 70 - ON Semiconductor 產品 - 電晶體 - FET、MOSFET - 單

NTMFS4854NST3G

ON Semiconductor

MOSFET N-CH 25V 15.2A SO-8FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 149A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 3.2V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 11.5V
Input Capacitance (Ciss) (Max) @ Vds: 4830pF @ 12V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 900mW (Ta), 86.2W (Tc)
Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SO-8FL
Package / Case: 8-PowerTDFN

封裝: 8-PowerTDFN

庫存5,232

MOSFET (Metal Oxide)

25V

15.2A (Ta), 149A (Tc)

3.2V, 10V

2.5V @ 250µA

85nC @ 11.5V

4830pF @ 12V

±16V

-

900mW (Ta), 86.2W (Tc)

2.5 mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SO-8FL

8-PowerTDFN

NTMFS4854NST1G

ON Semiconductor

MOSFET N-CH 25V 15.2A SO-8FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 149A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 3.2V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 11.5V
Input Capacitance (Ciss) (Max) @ Vds: 4830pF @ 12V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 900mW (Ta), 86.2W (Tc)
Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SO-8FL
Package / Case: 8-PowerTDFN

封裝: 8-PowerTDFN

庫存7,440

MOSFET (Metal Oxide)

25V

15.2A (Ta), 149A (Tc)

3.2V, 10V

2.5V @ 250µA

85nC @ 11.5V

4830pF @ 12V

±16V

-

900mW (Ta), 86.2W (Tc)

2.5 mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SO-8FL

8-PowerTDFN

NTMFS4833NST3G

ON Semiconductor

MOSFET N-CH 30V 16A SO-8FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 156A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 11.5V
Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 12V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 900mW (Ta), 86.2W (Tc)
Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SO-8FL
Package / Case: 8-PowerTDFN

封裝: 8-PowerTDFN

庫存7,472

MOSFET (Metal Oxide)

30V

16A (Ta), 156A (Tc)

4.5V, 10V

2.5V @ 250µA

86nC @ 11.5V

5250pF @ 12V

±20V

-

900mW (Ta), 86.2W (Tc)

2.2 mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SO-8FL

8-PowerTDFN

NTMFS4833NST1G

ON Semiconductor

MOSFET N-CH 30V 16A SO-8FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 156A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 11.5V
Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 12V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 900mW (Ta), 86.2W (Tc)
Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SO-8FL
Package / Case: 8-PowerTDFN

封裝: 8-PowerTDFN

庫存7,808

MOSFET (Metal Oxide)

30V

16A (Ta), 156A (Tc)

4.5V, 10V

2.5V @ 250µA

86nC @ 11.5V

5250pF @ 12V

±20V

-

900mW (Ta), 86.2W (Tc)

2.2 mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SO-8FL

8-PowerTDFN

NTD4979NT4G

ON Semiconductor

MOSFET N-CH 30V 9.4A DPAK-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 837pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.38W (Ta), 26.3W (Tc)
Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存5,760

MOSFET (Metal Oxide)

30V

9.4A (Ta), 41A (Tc)

4.5V, 10V

2.5V @ 250µA

16.5nC @ 10V

837pF @ 15V

±20V

-

1.38W (Ta), 26.3W (Tc)

9 mOhm @ 30A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

DPAK

TO-252-3, DPak (2 Leads + Tab), SC-63

STD25P03LT4G

ON Semiconductor

MOSFET P-CH 30V DPAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 80 mOhm @ 25A, 5V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存2,368

MOSFET (Metal Oxide)

30V

25A (Tc)

4V, 5V

2V @ 250µA

20nC @ 5V

1260pF @ 25V

±15V

-

80 mOhm @ 25A, 5V

-55°C ~ 175°C (TJ)

Surface Mount

DPAK-3

TO-252-3, DPak (2 Leads + Tab), SC-63

STD12N10T4G

ON Semiconductor

MOSFET N-CH SPCL 100V DPAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存4,000

-

SBVS138LT1G

ON Semiconductor

MOSFET N-CH 50V 0.2A SOT-23

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存6,368

-

NVTS4409NT1G

ON Semiconductor

MOSFET N-CH 25V/8V 0.075A SC-70

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存7,488

-

NVTJD4401NT1G

ON Semiconductor

MOSFET N-CH 20V 0.63A SC-88

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存3,616

-

NVTJD4158CT1G

ON Semiconductor

MOSFET P-CH 20V 0.88A SC-88

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: SC-88/SC70-6/SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363

封裝: 6-TSSOP, SC-88, SOT-363

庫存5,008

-

Surface Mount

SC-88/SC70-6/SOT-363

6-TSSOP, SC-88, SOT-363

NVTJD4105CT1G

ON Semiconductor

MOSFET 20V 0.63A SC-88

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: SC-88/SC70-6/SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363

封裝: 6-TSSOP, SC-88, SOT-363

庫存3,984

-

Surface Mount

SC-88/SC70-6/SOT-363

6-TSSOP, SC-88, SOT-363

NVMSD6N303R2G

ON Semiconductor

MOSFET N-CH 30V 6A 8SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V
Vgs (Max): -
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 32 mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存7,328

MOSFET (Metal Oxide)

30V

6A (Ta)

-

2.5V @ 250µA

30nC @ 10V

950pF @ 24V

-

Schottky Diode (Isolated)

-

32 mOhm @ 6A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC

8-SOIC (0.154", 3.90mm Width)

NVMS4816NR2G

ON Semiconductor

MOSFET N-CH 30V 9A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 10 mOhm @ 9A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存7,328

MOSFET (Metal Oxide)

30V

6.8A (Ta)

-

3V @ 250µA

9.2nC @ 4.5V

1060pF @ 25V

-

10 mOhm @ 9A, 10V

-

Surface Mount

8-SOIC

8-SOIC (0.154", 3.90mm Width)

NVF2955PT1G

ON Semiconductor

MOSFET P CH 60V 1.7A SOT223

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 492pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 185 mOhm @ 2.4A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA

封裝: TO-261-4, TO-261AA

庫存3,504

MOSFET (Metal Oxide)

60V

1.7A (Ta)

10V

4V @ 1mA

14.3nC @ 10V

492pF @ 25V

±20V

-

1W (Ta)

185 mOhm @ 2.4A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

SOT-223

TO-261-4, TO-261AA

NVD6415ANLT4G-VF01

ON Semiconductor

MOSFET N-CH 100V 23A DPAK-4

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1024pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 52 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存6,032

MOSFET (Metal Oxide)

100V

23A (Tc)

4.5V, 10V

2V @ 250µA

20nC @ 4.5V

1024pF @ 25V

±20V

-

83W (Tc)

52 mOhm @ 10A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

DPAK

TO-252-3, DPak (2 Leads + Tab), SC-63

NVD5413NT4G

ON Semiconductor

MOSFET N-CH 60V 30A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存7,248

MOSFET (Metal Oxide)

60V

30A (Tc)

10V

4V @ 250µA

46nC @ 10V

1725pF @ 25V

±20V

-

68W (Tc)

26 mOhm @ 20A, 10V

-

Surface Mount

DPAK

TO-252-3, DPak (2 Leads + Tab), SC-63

NVB5426NT4G

ON Semiconductor

MOSFET N-CH 60V 120A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 215W (Tc)
Rds On (Max) @ Id, Vgs: 6 mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存6,704

MOSFET (Metal Oxide)

60V

120A (Tc)

10V

4V @ 250µA

170nC @ 10V

5800pF @ 25V

±20V

-

215W (Tc)

6 mOhm @ 60A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

NVB5405NT4G

ON Semiconductor

MOSFET N-CH 40V 16.5A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 32V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 40A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存4,352

MOSFET (Metal Oxide)

40V

16.5A (Ta), 116A (Tc)

5V, 10V

3.5V @ 250µA

88nC @ 10V

4000pF @ 32V

±20V

-

3W (Ta), 150W (Tc)

5.8 mOhm @ 40A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

NTMFS4926NET1G

ON Semiconductor

MOSFET N-CH 30V 44A SO8-FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1004pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 920mW (Ta), 21.6W (Tc)
Rds On (Max) @ Id, Vgs: 7 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads

封裝: 8-PowerTDFN, 5 Leads

庫存3,344

MOSFET (Metal Oxide)

30V

9A (Ta), 44A (Tc)

4.5V, 10V

2.2V @ 250µA

17.3nC @ 10V

1004pF @ 15V

±20V

-

920mW (Ta), 21.6W (Tc)

7 mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

5-DFN (5x6) (8-SOFL)

8-PowerTDFN, 5 Leads

NTMFS4925NET1G

ON Semiconductor

MOSFET N-CH 30V 48A SO8-FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1264pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 920mW (Ta), 23.2W (Tc)
Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads

封裝: 8-PowerTDFN, 5 Leads

庫存4,560

MOSFET (Metal Oxide)

30V

9.7A (Ta), 48A (Tc)

4.5V, 10V

2.2V @ 250µA

21.5nC @ 10V

1264pF @ 15V

±20V

-

920mW (Ta), 23.2W (Tc)

6 mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

5-DFN (5x6) (8-SOFL)

8-PowerTDFN, 5 Leads

NTMFS4922NET1G

ON Semiconductor

MOSFET N-CH 30V 147A SO8-FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 147A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 76.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5505pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 930mW (Ta), 69.44W (Tc)
Rds On (Max) @ Id, Vgs: 2 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads

封裝: 8-PowerTDFN, 5 Leads

庫存6,272

MOSFET (Metal Oxide)

30V

17.1A (Ta), 147A (Tc)

4.5V, 10V

2V @ 250µA

76.5nC @ 10V

5505pF @ 15V

±20V

-

930mW (Ta), 69.44W (Tc)

2 mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

5-DFN (5x6) (8-SOFL)

8-PowerTDFN, 5 Leads

NTDV6414ANT4G

ON Semiconductor

MOSFET N-CH 100V 32A DPAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存4,336

-

Surface Mount

DPAK

TO-252-3, DPak (2 Leads + Tab), SC-63

NTDV5805NT4G

ON Semiconductor

MOSFET N-CH 40V 51A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存120,012

MOSFET (Metal Oxide)

40V

51A (Tc)

5V, 10V

3.5V @ 250µA

80nC @ 10V

1725pF @ 25V

±20V

-

9.5 mOhm @ 15A, 10V

-

Surface Mount

DPAK

TO-252-3, DPak (2 Leads + Tab), SC-63

NTDV3055L104-1G

ON Semiconductor

MOSFET N-CH 60V 12A IPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta), 48W (Tj)
Rds On (Max) @ Id, Vgs: 104 mOhm @ 6A, 5V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-Pak
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封裝: TO-251-3 Short Leads, IPak, TO-251AA

庫存5,664

MOSFET (Metal Oxide)

60V

12A (Ta)

5V

2V @ 250µA

20nC @ 5V

440pF @ 25V

±15V

-

1.5W (Ta), 48W (Tj)

104 mOhm @ 6A, 5V

-55°C ~ 175°C (TJ)

Through Hole

I-Pak

TO-251-3 Short Leads, IPak, TO-251AA

NTDV2955PT4G

ON Semiconductor

MOSFET P-CH 60V 12A DPAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存30,000

-

Surface Mount

DPAK

TO-252-3, DPak (2 Leads + Tab), SC-63

NTDV2955-1G

ON Semiconductor

MOSFET P-CH 60V 12A IPAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: I-Pak
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封裝: TO-251-3 Short Leads, IPak, TO-251AA

庫存4,704

-

Through Hole

I-Pak

TO-251-3 Short Leads, IPak, TO-251AA

NTDV18N06LT4G

ON Semiconductor

MOSFET N-CH 60V 18A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 55W (Tj)
Rds On (Max) @ Id, Vgs: 65 mOhm @ 9A, 5V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存4,512

MOSFET (Metal Oxide)

60V

18A (Ta)

5V

2V @ 250µA

22nC @ 5V

675pF @ 25V

±15V

-

2.1W (Ta), 55W (Tj)

65 mOhm @ 9A, 5V

-55°C ~ 175°C (TJ)

Surface Mount

DPAK-3

TO-252-3, DPak (2 Leads + Tab), SC-63

NTBV45N06T4G

ON Semiconductor

MOSFET N-CH 60V 45A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 26 mOhm @ 22.5A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存6,320

MOSFET (Metal Oxide)

60V

45A (Ta)

-

4V @ 250µA

46nC @ 10V

1725pF @ 25V

-

26 mOhm @ 22.5A, 10V

-

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

NTBV30N20T4G

ON Semiconductor

MOSFET N-CH 200V 30A D2PAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存5,632

-

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

零件編號	製造商	描述	封裝	庫存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NTMFS4854NST3G	ON Semiconductor	MOSFET N-CH 25V 15.2A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 149A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3.2V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 4830pF @ 12V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 900mW (Ta), 86.2W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SO-8FL Package / Case: 8-PowerTDFN	封裝: 8-PowerTDFN	庫存5,232	MOSFET (Metal Oxide)	25V	15.2A (Ta), 149A (Tc)	3.2V, 10V	2.5V @ 250µA	85nC @ 11.5V	4830pF @ 12V	±16V	-	900mW (Ta), 86.2W (Tc)	2.5 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SO-8FL	8-PowerTDFN
NTMFS4854NST1G	ON Semiconductor	MOSFET N-CH 25V 15.2A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 149A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3.2V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 4830pF @ 12V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 900mW (Ta), 86.2W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SO-8FL Package / Case: 8-PowerTDFN	封裝: 8-PowerTDFN	庫存7,440	MOSFET (Metal Oxide)	25V	15.2A (Ta), 149A (Tc)	3.2V, 10V	2.5V @ 250µA	85nC @ 11.5V	4830pF @ 12V	±16V	-	900mW (Ta), 86.2W (Tc)	2.5 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SO-8FL	8-PowerTDFN
NTMFS4833NST3G	ON Semiconductor	MOSFET N-CH 30V 16A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 156A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 900mW (Ta), 86.2W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SO-8FL Package / Case: 8-PowerTDFN	封裝: 8-PowerTDFN	庫存7,472	MOSFET (Metal Oxide)	30V	16A (Ta), 156A (Tc)	4.5V, 10V	2.5V @ 250µA	86nC @ 11.5V	5250pF @ 12V	±20V	-	900mW (Ta), 86.2W (Tc)	2.2 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SO-8FL	8-PowerTDFN
NTMFS4833NST1G	ON Semiconductor	MOSFET N-CH 30V 16A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 156A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 900mW (Ta), 86.2W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SO-8FL Package / Case: 8-PowerTDFN	封裝: 8-PowerTDFN	庫存7,808	MOSFET (Metal Oxide)	30V	16A (Ta), 156A (Tc)	4.5V, 10V	2.5V @ 250µA	86nC @ 11.5V	5250pF @ 12V	±20V	-	900mW (Ta), 86.2W (Tc)	2.2 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SO-8FL	8-PowerTDFN
NTD4979NT4G	ON Semiconductor	MOSFET N-CH 30V 9.4A DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 837pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.38W (Ta), 26.3W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存5,760	MOSFET (Metal Oxide)	30V	9.4A (Ta), 41A (Tc)	4.5V, 10V	2.5V @ 250µA	16.5nC @ 10V	837pF @ 15V	±20V	-	1.38W (Ta), 26.3W (Tc)	9 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STD25P03LT4G	ON Semiconductor	MOSFET P-CH 30V DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 80 mOhm @ 25A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存2,368	MOSFET (Metal Oxide)	30V	25A (Tc)	4V, 5V	2V @ 250µA	20nC @ 5V	1260pF @ 25V	±15V	-	-	80 mOhm @ 25A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK-3	TO-252-3, DPak (2 Leads + Tab), SC-63
STD12N10T4G	ON Semiconductor	MOSFET N-CH SPCL 100V DPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存4,000	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SBVS138LT1G	ON Semiconductor	MOSFET N-CH 50V 0.2A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存6,368	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVTS4409NT1G	ON Semiconductor	MOSFET N-CH 25V/8V 0.075A SC-70 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存7,488	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVTJD4401NT1G	ON Semiconductor	MOSFET N-CH 20V 0.63A SC-88 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存3,616	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVTJD4158CT1G	ON Semiconductor	MOSFET P-CH 20V 0.88A SC-88 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SC-88/SC70-6/SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363	封裝: 6-TSSOP, SC-88, SOT-363	庫存5,008	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	SC-88/SC70-6/SOT-363	6-TSSOP, SC-88, SOT-363
NVTJD4105CT1G	ON Semiconductor	MOSFET 20V 0.63A SC-88 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SC-88/SC70-6/SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363	封裝: 6-TSSOP, SC-88, SOT-363	庫存3,984	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	SC-88/SC70-6/SOT-363	6-TSSOP, SC-88, SOT-363
NVMSD6N303R2G	ON Semiconductor	MOSFET N-CH 30V 6A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V Vgs (Max): - FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 32 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存7,328	MOSFET (Metal Oxide)	30V	6A (Ta)	-	2.5V @ 250µA	30nC @ 10V	950pF @ 24V	-	Schottky Diode (Isolated)	-	32 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NVMS4816NR2G	ON Semiconductor	MOSFET N-CH 30V 9A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 10 mOhm @ 9A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存7,328	MOSFET (Metal Oxide)	30V	6.8A (Ta)	-	3V @ 250µA	9.2nC @ 4.5V	1060pF @ 25V	-	-	-	10 mOhm @ 9A, 10V	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NVF2955PT1G	ON Semiconductor	MOSFET P CH 60V 1.7A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 492pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 185 mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	封裝: TO-261-4, TO-261AA	庫存3,504	MOSFET (Metal Oxide)	60V	1.7A (Ta)	10V	4V @ 1mA	14.3nC @ 10V	492pF @ 25V	±20V	-	1W (Ta)	185 mOhm @ 2.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
NVD6415ANLT4G-VF01	ON Semiconductor	MOSFET N-CH 100V 23A DPAK-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1024pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存6,032	MOSFET (Metal Oxide)	100V	23A (Tc)	4.5V, 10V	2V @ 250µA	20nC @ 4.5V	1024pF @ 25V	±20V	-	83W (Tc)	52 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NVD5413NT4G	ON Semiconductor	MOSFET N-CH 60V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存7,248	MOSFET (Metal Oxide)	60V	30A (Tc)	10V	4V @ 250µA	46nC @ 10V	1725pF @ 25V	±20V	-	68W (Tc)	26 mOhm @ 20A, 10V	-	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NVB5426NT4G	ON Semiconductor	MOSFET N-CH 60V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 215W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存6,704	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4V @ 250µA	170nC @ 10V	5800pF @ 25V	±20V	-	215W (Tc)	6 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVB5405NT4G	ON Semiconductor	MOSFET N-CH 40V 16.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 116A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 32V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存4,352	MOSFET (Metal Oxide)	40V	16.5A (Ta), 116A (Tc)	5V, 10V	3.5V @ 250µA	88nC @ 10V	4000pF @ 32V	±20V	-	3W (Ta), 150W (Tc)	5.8 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTMFS4926NET1G	ON Semiconductor	MOSFET N-CH 30V 44A SO8-FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1004pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 920mW (Ta), 21.6W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	封裝: 8-PowerTDFN, 5 Leads	庫存3,344	MOSFET (Metal Oxide)	30V	9A (Ta), 44A (Tc)	4.5V, 10V	2.2V @ 250µA	17.3nC @ 10V	1004pF @ 15V	±20V	-	920mW (Ta), 21.6W (Tc)	7 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4925NET1G	ON Semiconductor	MOSFET N-CH 30V 48A SO8-FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1264pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 920mW (Ta), 23.2W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	封裝: 8-PowerTDFN, 5 Leads	庫存4,560	MOSFET (Metal Oxide)	30V	9.7A (Ta), 48A (Tc)	4.5V, 10V	2.2V @ 250µA	21.5nC @ 10V	1264pF @ 15V	±20V	-	920mW (Ta), 23.2W (Tc)	6 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4922NET1G	ON Semiconductor	MOSFET N-CH 30V 147A SO8-FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 147A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 76.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5505pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 930mW (Ta), 69.44W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	封裝: 8-PowerTDFN, 5 Leads	庫存6,272	MOSFET (Metal Oxide)	30V	17.1A (Ta), 147A (Tc)	4.5V, 10V	2V @ 250µA	76.5nC @ 10V	5505pF @ 15V	±20V	-	930mW (Ta), 69.44W (Tc)	2 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTDV6414ANT4G	ON Semiconductor	MOSFET N-CH 100V 32A DPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存4,336	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTDV5805NT4G	ON Semiconductor	MOSFET N-CH 40V 51A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存120,012	MOSFET (Metal Oxide)	40V	51A (Tc)	5V, 10V	3.5V @ 250µA	80nC @ 10V	1725pF @ 25V	±20V	-	-	9.5 mOhm @ 15A, 10V	-	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTDV3055L104-1G	ON Semiconductor	MOSFET N-CH 60V 12A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 48W (Tj) Rds On (Max) @ Id, Vgs: 104 mOhm @ 6A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	封裝: TO-251-3 Short Leads, IPak, TO-251AA	庫存5,664	MOSFET (Metal Oxide)	60V	12A (Ta)	5V	2V @ 250µA	20nC @ 5V	440pF @ 25V	±15V	-	1.5W (Ta), 48W (Tj)	104 mOhm @ 6A, 5V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTDV2955PT4G	ON Semiconductor	MOSFET P-CH 60V 12A DPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存30,000	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTDV2955-1G	ON Semiconductor	MOSFET P-CH 60V 12A IPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	封裝: TO-251-3 Short Leads, IPak, TO-251AA	庫存4,704	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTDV18N06LT4G	ON Semiconductor	MOSFET N-CH 60V 18A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 55W (Tj) Rds On (Max) @ Id, Vgs: 65 mOhm @ 9A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存4,512	MOSFET (Metal Oxide)	60V	18A (Ta)	5V	2V @ 250µA	22nC @ 5V	675pF @ 25V	±15V	-	2.1W (Ta), 55W (Tj)	65 mOhm @ 9A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK-3	TO-252-3, DPak (2 Leads + Tab), SC-63
NTBV45N06T4G	ON Semiconductor	MOSFET N-CH 60V 45A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 26 mOhm @ 22.5A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存6,320	MOSFET (Metal Oxide)	60V	45A (Ta)	-	4V @ 250µA	46nC @ 10V	1725pF @ 25V	-	-	-	26 mOhm @ 22.5A, 10V	-	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTBV30N20T4G	ON Semiconductor	MOSFET N-CH 200V 30A D2PAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存5,632	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB