頁 71 - ON Semiconductor 產品 - 電晶體 - FET、MOSFET - 單 | 黑森爾電子
聯繫我們
SalesDept@heisener.com +86-755-83210559 ext. 816
登入/註冊
Language Translation

* Please refer to the English Version as our Official Version.

BOM
購物車 0

ON Semiconductor 產品 - 電晶體 - FET、MOSFET - 單

記錄 2,260
頁  71/76
圖片
零件編號
製造商
描述
封裝
庫存
數量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
2N7002WST1G
ON Semiconductor

MOSFET N-CH 60V 0.115A SC70

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3 (SOT323)
  • Package / Case: SC-70, SOT-323
封裝: SC-70, SOT-323
庫存4,208
-
-
-
4.5V, 10V
-
-
-
±20V
-
-
-
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-3 (SOT323)
SC-70, SOT-323
2SK4198FS
ON Semiconductor

MOSFET N-CH 600V 4A TO-220F-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 30V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.34 Ohm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存3,200
MOSFET (Metal Oxide)
600V
4A (Tc)
10V
-
14.3nC @ 10V
360pF @ 30V
±30V
-
2W (Ta), 30W (Tc)
2.34 Ohm @ 2.5A, 10V
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
2SK4197FS
ON Semiconductor

MOSFET N-CH 600V 3.3A TO-220F-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 30V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.25 Ohm @ 1.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存2,464
MOSFET (Metal Oxide)
600V
3.3A (Tc)
10V
-
11nC @ 10V
260pF @ 30V
±30V
-
2W (Ta), 28W (Tc)
3.25 Ohm @ 1.8A, 10V
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
SCH1343-TL-H
ON Semiconductor

MOSFET P-CH 20V 3.5A SCH6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 72 mOhm @ 2A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-SCH
  • Package / Case: SOT-563, SOT-666
封裝: SOT-563, SOT-666
庫存5,408
MOSFET (Metal Oxide)
20V
3.5A (Ta)
1.8V, 4.5V
-
11nC @ 4.5V
1220pF @ 10V
±10V
-
1W (Ta)
72 mOhm @ 2A, 4.5V
150°C (TJ)
Surface Mount
6-SCH
SOT-563, SOT-666
hot SCH1333-TL-H
ON Semiconductor

MOSFET P-CH 20V 2A SCH6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 1A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-SCH
  • Package / Case: SOT-563, SOT-666
封裝: SOT-563, SOT-666
庫存660,000
MOSFET (Metal Oxide)
20V
2A (Ta)
1.8V, 4.5V
-
3.3nC @ 4.5V
250pF @ 10V
±10V
-
800mW (Ta)
130 mOhm @ 1A, 4.5V
150°C (TJ)
Surface Mount
6-SCH
SOT-563, SOT-666
hot MCH6448-TL-H
ON Semiconductor

MOSFET N-CH 20V 8A MCPH6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 10V
  • Vgs (Max): ±9V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-MCPH
  • Package / Case: 6-TSSOP, SC-88, SOT-363
封裝: 6-TSSOP, SC-88, SOT-363
庫存36,000
MOSFET (Metal Oxide)
20V
8A (Ta)
1.2V, 4.5V
-
11.2nC @ 4.5V
705pF @ 10V
±9V
-
1.5W (Ta)
22 mOhm @ 4A, 4.5V
150°C (TJ)
Surface Mount
6-MCPH
6-TSSOP, SC-88, SOT-363
MCH6341-TL-H
ON Semiconductor

MOSFET P-CH 30V 5A MCPH6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 59 mOhm @ 3A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-MCPH
  • Package / Case: 6-TSSOP, SC-88, SOT-363
封裝: 6-TSSOP, SC-88, SOT-363
庫存7,888
MOSFET (Metal Oxide)
30V
5A (Ta)
4V, 10V
-
10nC @ 10V
430pF @ 10V
±20V
-
1.5W (Ta)
59 mOhm @ 3A, 10V
-
Surface Mount
6-MCPH
6-TSSOP, SC-88, SOT-363
hot MCH3481-TL-H
ON Semiconductor

MOSFET N-CH 20V 2A MCPH3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 10V
  • Vgs (Max): ±9V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 104 mOhm @ 1A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70FL/MCPH3
  • Package / Case: 3-SMD, Flat Leads
封裝: 3-SMD, Flat Leads
庫存39,000
MOSFET (Metal Oxide)
20V
2A (Ta)
1.2V, 4.5V
-
2.9nC @ 4.5V
175pF @ 10V
±9V
-
800mW (Ta)
104 mOhm @ 1A, 4.5V
150°C (TJ)
Surface Mount
SC-70FL/MCPH3
3-SMD, Flat Leads
MCH3474-TL-H
ON Semiconductor

MOSFET N-CH 30V 4A MCPH3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70FL/MCPH3
  • Package / Case: 3-SMD, Flat Leads
封裝: 3-SMD, Flat Leads
庫存3,712
MOSFET (Metal Oxide)
30V
4A (Ta)
1.8V, 4.5V
-
4.7nC @ 4.5V
430pF @ 10V
±12V
-
1W (Ta)
50 mOhm @ 2A, 4.5V
150°C (TJ)
Surface Mount
SC-70FL/MCPH3
3-SMD, Flat Leads
hot MCH3382-TL-H
ON Semiconductor

MOSFET P-CH 12V 2A MCPH3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 6V
  • Vgs (Max): ±9V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 198 mOhm @ 1A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70FL/MCPH3
  • Package / Case: 3-SMD, Flat Leads
封裝: 3-SMD, Flat Leads
庫存414,252
MOSFET (Metal Oxide)
12V
2A (Ta)
1.8V, 4.5V
-
2.3nC @ 4.5V
170 pF @ 6V
±9V
-
800mW (Ta)
198 mOhm @ 1A, 4.5V
150°C (TJ)
Surface Mount
SC-70FL/MCPH3
3-SMD, Flat Leads
MCH3375-TL-H
ON Semiconductor

MOSFET P-CH 30V 1.6A MCPH3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 82pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 295 mOhm @ 800mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70FL/MCPH3
  • Package / Case: 3-SMD, Flat Leads
封裝: 3-SMD, Flat Leads
庫存2,736
MOSFET (Metal Oxide)
30V
1.6A (Tc)
4V, 10V
-
2.2nC @ 10V
82pF @ 10V
±20V
-
800mW (Ta)
295 mOhm @ 800mA, 10V
150°C (TJ)
Surface Mount
SC-70FL/MCPH3
3-SMD, Flat Leads
hot CPH6355-TL-H
ON Semiconductor

MOSFET P-CH 30V 3A CPH6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 172pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 169 mOhm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-CPH
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封裝: SOT-23-6 Thin, TSOT-23-6
庫存21,228
MOSFET (Metal Oxide)
30V
3A (Ta)
4V, 10V
-
3.9nC @ 10V
172pF @ 10V
±20V
-
1.6W (Ta)
169 mOhm @ 1.5A, 10V
150°C (TJ)
Surface Mount
6-CPH
SOT-23-6 Thin, TSOT-23-6
CPH3360-TL-H
ON Semiconductor

MOSFET P-CH 30V 1.6A CPH3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 82pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Ta)
  • Rds On (Max) @ Id, Vgs: 303 mOhm @ 800mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-CPH
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存5,504
MOSFET (Metal Oxide)
30V
1.6A (Ta)
4V, 10V
-
2.2nC @ 10V
82pF @ 10V
±20V
-
900mW (Ta)
303 mOhm @ 800mA, 10V
150°C (TJ)
Surface Mount
3-CPH
TO-236-3, SC-59, SOT-23-3
5LP01SS-TL-E
ON Semiconductor

MOSFET P-CH 50V 70MA SSFP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 23 Ohm @ 40mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-SSFP
  • Package / Case: 3-SMD, Flat Leads
封裝: 3-SMD, Flat Leads
庫存3,120
MOSFET (Metal Oxide)
50V
70mA (Ta)
1.5V, 4V
-
1.4nC @ 10V
7.4pF @ 10V
±10V
-
150mW (Ta)
23 Ohm @ 40mA, 4V
150°C (TJ)
Surface Mount
3-SSFP
3-SMD, Flat Leads
5LP01S-TL-E
ON Semiconductor

MOSFET P-CH 50V 70MA SMCP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 23 Ohm @ 40mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMCP
  • Package / Case: SC-75, SOT-416
封裝: SC-75, SOT-416
庫存5,680
MOSFET (Metal Oxide)
50V
70mA (Ta)
1.5V, 4V
-
1.4nC @ 10V
7.4pF @ 10V
±10V
-
150mW (Ta)
23 Ohm @ 40mA, 4V
150°C (TJ)
Surface Mount
SMCP
SC-75, SOT-416
hot 5LN01S-TL-E
ON Semiconductor

MOSFET N-CH 50V 100MA SMCP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMCP
  • Package / Case: SC-75, SOT-416
封裝: SC-75, SOT-416
庫存325,464
MOSFET (Metal Oxide)
50V
100mA (Ta)
1.5V, 4V
-
1.57nC @ 10V
6.6pF @ 10V
±10V
-
150mW (Ta)
7.8 Ohm @ 50mA, 4V
150°C (TJ)
Surface Mount
SMCP
SC-75, SOT-416
5LN01C-TB-H
ON Semiconductor

MOSFET N-CH 50V 100MA CP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 250mW (Ta)
  • Rds On (Max) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-CP
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存2,736
MOSFET (Metal Oxide)
50V
100mA (Ta)
1.5V, 4V
-
1.57nC @ 10V
6.6pF @ 10V
±10V
-
250mW (Ta)
7.8 Ohm @ 50mA, 4V
150°C (TJ)
Surface Mount
3-CP
TO-236-3, SC-59, SOT-23-3
hot NVD4815NT4G
ON Semiconductor

MOSFET N-CH 30V 6.9A DPAK-4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存120,360
MOSFET (Metal Oxide)
30V
6.9A (Ta), 35A (Tc)
4.5V, 11.5V
2.5V @ 250µA
6.6nC @ 4.5V
770pF @ 12V
±20V
-
1.26W (Ta), 32.6W (Tc)
15 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
SFT1450-H
ON Semiconductor

MOSFET N-CH 40V 21A TP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 14.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 23W (Tc)
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 10.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TP
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封裝: TO-251-3 Short Leads, IPak, TO-251AA
庫存5,104
MOSFET (Metal Oxide)
40V
21A (Ta)
10V
-
14.4nC @ 10V
715pF @ 20V
±20V
-
1W (Ta), 23W (Tc)
28 mOhm @ 10.5A, 10V
150°C (TJ)
Through Hole
TP
TO-251-3 Short Leads, IPak, TO-251AA
SFT1443-H
ON Semiconductor

MOSFET N-CH 100V 9A TP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 19W (Tc)
  • Rds On (Max) @ Id, Vgs: 225 mOhm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TP
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封裝: TO-251-3 Short Leads, IPak, TO-251AA
庫存3,248
MOSFET (Metal Oxide)
100V
9A (Ta)
4V, 10V
-
9.8nC @ 10V
490pF @ 20V
±20V
-
1W (Ta), 19W (Tc)
225 mOhm @ 3A, 10V
150°C (TJ)
Through Hole
TP
TO-251-3 Short Leads, IPak, TO-251AA
SFT1431-E
ON Semiconductor

MOSFET N-CH 35V 11A TP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 35V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 15W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TP
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封裝: TO-251-3 Short Leads, IPak, TO-251AA
庫存7,184
MOSFET (Metal Oxide)
35V
11A (Ta)
4V, 10V
-
17.3nC @ 10V
960pF @ 20V
±20V
-
1W (Ta), 15W (Tc)
25 mOhm @ 5.5A, 10V
150°C (TJ)
Through Hole
TP
TO-251-3 Short Leads, IPak, TO-251AA
SFT1423-E
ON Semiconductor

MOSFET N-CH 500V 2A TP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.9 Ohm @ 1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TP
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封裝: TO-251-3 Short Leads, IPak, TO-251AA
庫存3,168
MOSFET (Metal Oxide)
500V
2A (Ta)
4V, 10V
-
8.7nC @ 10V
175pF @ 30V
±20V
-
1W (Ta), 20W (Tc)
4.9 Ohm @ 1A, 10V
150°C (TJ)
Through Hole
TP
TO-251-3 Short Leads, IPak, TO-251AA
SFT1350-H
ON Semiconductor

MOSFET P-CH 40V 19A TP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 23W (Tc)
  • Rds On (Max) @ Id, Vgs: 59 mOhm @ 9.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TP
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封裝: TO-251-3 Short Leads, IPak, TO-251AA
庫存5,856
MOSFET (Metal Oxide)
40V
19A (Ta)
4.5V, 10V
-
12nC @ 10V
590pF @ 20V
±20V
-
1W (Ta), 23W (Tc)
59 mOhm @ 9.5A, 10V
150°C (TJ)
Through Hole
TP
TO-251-3 Short Leads, IPak, TO-251AA
hot NTMFS4846NT1G
ON Semiconductor

MOSFET N-CH 30V 12.7A SO-8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 11.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 890mW (Ta), 55.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
封裝: 8-PowerTDFN, 5 Leads
庫存52,404
MOSFET (Metal Oxide)
30V
12.7A (Ta), 100A (Tc)
4.5V, 11.5V
2.5V @ 250µA
53nC @ 11.5V
3250pF @ 12V
±20V
-
890mW (Ta), 55.5W (Tc)
3.4 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
hot NTMFS4839NHT1G
ON Semiconductor

MOSFET N-CH 30V 9.5A SO-8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43.5nC @ 11.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2354pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 870mW (Ta), 42.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
封裝: 8-PowerTDFN, 5 Leads
庫存429,552
MOSFET (Metal Oxide)
30V
9.5A (Ta), 64A (Tc)
4.5V, 11.5V
2.5V @ 250µA
43.5nC @ 11.5V
2354pF @ 12V
±20V
-
870mW (Ta), 42.4W (Tc)
5.5 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
hot NTD2955PT4G
ON Semiconductor

MOSFET P-CH 60V 12A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tj)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存182,400
MOSFET (Metal Oxide)
60V
12A (Ta)
10V
4V @ 250µA
30nC @ 10V
750pF @ 25V
±20V
-
55W (Tj)
180 mOhm @ 6A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD4906NT4G
ON Semiconductor

MOSFET N-CH 30V 10.3A SGL DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.38W (Ta), 37.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存658,920
MOSFET (Metal Oxide)
30V
10.3A (Ta), 54A (Tc)
4.5V, 10V
2.2V @ 250µA
24nC @ 10V
1932pF @ 15V
±20V
-
1.38W (Ta), 37.5W (Tc)
5.5 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD4806NT4G
ON Semiconductor

MOSFET N-CH 30V 11.3A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2142pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta), 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存340,752
MOSFET (Metal Oxide)
30V
11.3A (Ta), 79A (Tc)
4.5V, 11.5V
2.5V @ 250µA
23nC @ 4.5V
2142pF @ 12V
±20V
-
1.4W (Ta), 68W (Tc)
6 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
NTP5860NLG
ON Semiconductor

MOSFET N-CH 60V 220A TO-220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10760pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 283W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存7,808
MOSFET (Metal Oxide)
60V
220A (Tc)
4.5V, 10V
4V @ 250µA
180nC @ 10V
10760pF @ 25V
±20V
-
283W (Tc)
3 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
NVTGS3455T1G
ON Semiconductor

MOSFET N-CH 30V 3.5A 6-TSOP

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
庫存3,856
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-