圖片 |
零件編號 |
製造商 |
描述 |
封裝 |
庫存 |
數量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 14A 8-SOP ADV
|
封裝: 8-PowerVDFN |
庫存59,136 |
|
MOSFET (Metal Oxide) | 60V | 14A (Ta) | 6.5V, 10V | 4V @ 200µA | 16nC @ 10V | 1300pF @ 30V | ±20V | - | 1.6W (Ta), 32W (Tc) | 14 mOhm @ 7A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 63A 8SOP
|
封裝: 8-PowerVDFN |
庫存36,648 |
|
MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 2.3V @ 200µA | 14.8nC @ 10V | 1400pF @ 15V | ±20V | - | 1.6W (Ta), 36W (Tc) | 4 mOhm @ 20A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 40A 8TSON
|
封裝: 8-PowerVDFN |
庫存51,828 |
|
MOSFET (Metal Oxide) | 80V | 18A (Tc) | 10V | 4V @ 200µA | 18nC @ 10V | 1600pF @ 40V | ±20V | - | 700mW (Ta), 42W (Tc) | 13.3 mOhm @ 9A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 9.6A 8TSON
|
封裝: 8-PowerVDFN |
庫存24,312 |
|
MOSFET (Metal Oxide) | 80V | 9.6A (Tc) | 10V | 4V @ 100µA | 11nC @ 10V | 920pF @ 40V | ±20V | - | 700mW (Ta), 27W (Tc) | 30 mOhm @ 4.8A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 30V 20A 8SOP
|
封裝: 8-PowerVDFN |
庫存29,610 |
|
MOSFET (Metal Oxide) | 30V | 20A (Tc) | 10V | 2.3V @ 1mA | 9.8nC @ 10V | 820pF @ 15V | ±20V | - | 1.6W (Ta), 24W (Tc) | 8.9 mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 30V 32A 8SOP
|
封裝: 8-PowerVDFN |
庫存28,476 |
|
MOSFET (Metal Oxide) | 30V | 32A (Ta) | 4.5V, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | ±20V | - | 1.6W (Ta), 21W (Tc) | 11 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 36A 8TSON ADV
|
封裝: 8-PowerVDFN |
庫存38,118 |
|
MOSFET (Metal Oxide) | 20V | 36A (Tc) | 2.5V, 4.5V | 1.2V @ 1mA | 65nC @ 5V | 4300pF @ 10V | ±12V | - | 42W (Tc) | 4.7 mOhm @ 18A, 4.5V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET P CH 20V 3.4A ES6
|
封裝: SOT-563, SOT-666 |
庫存89,154 |
|
MOSFET (Metal Oxide) | 20V | 3.4A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 10.4nC @ 4.5V | 630pF @ 10V | ±8V | - | 500mW (Ta) | 59 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | ES6 | SOT-563, SOT-666 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 4.2A
|
封裝: 6-SMD, Flat Leads |
庫存24,714 |
|
MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 1.5V, 4V | 1V @ 1mA | 16.8nC @ 4V | 1050pF @ 10V | ±10V | - | 500mW (Ta) | 28 mOhm @ 3A, 4V | 150°C (TJ) | Surface Mount | UF6 | 6-SMD, Flat Leads |
||
Toshiba Semiconductor and Storage |
MOSFET P CH 20V 2.6A ES6
|
封裝: SOT-563, SOT-666 |
庫存28,668 |
|
MOSFET (Metal Oxide) | 20V | 2.6A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | 290pF @ 10V | ±8V | - | 500mW (Ta) | 103 mOhm @ 1.5A, 4.5V | 150°C (TJ) | Surface Mount | ES6 | SOT-563, SOT-666 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 500MA SSM
|
封裝: SC-75, SOT-416 |
庫存22,698 |
|
MOSFET (Metal Oxide) | 20V | 500mA (Ta) | 1.5V, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | ±10V | - | 150mW (Ta) | 630 mOhm @ 200mA, 5V | 150°C (TJ) | Surface Mount | SSM | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 100A TO3P(L)
|
封裝: TO-3PL |
庫存7,476 |
|
MOSFET (Metal Oxide) | 600V | 100A (Ta) | 10V | 3.7V @ 5mA | 360nC @ 10V | 15000pF @ 30V | ±30V | Super Junction | 797W (Tc) | 18 mOhm @ 50A, 10V | 150°C (TJ) | Through Hole | TO-3P(L) | TO-3PL |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 61.8A TO-247
|
封裝: TO-247-3 |
庫存8,892 |
|
MOSFET (Metal Oxide) | 600V | 61.8A (Ta) | 10V | 3.5V @ 3.1mA | 135nC @ 10V | 6500pF @ 300V | ±30V | Super Junction | 400W (Tc) | 40 mOhm @ 21A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 30.8A TO-247
|
封裝: TO-247-3 |
庫存6,648 |
|
MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 4.5V @ 1.5mA | 105nC @ 10V | 3000pF @ 300V | ±30V | - | 230W (Tc) | 99 mOhm @ 15.4A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 38.8A T0247
|
封裝: TO-247-3 |
庫存21,132 |
|
MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 4.5V @ 1.9mA | 135nC @ 10V | 4100pF @ 300V | ±30V | - | 270W (Tc) | 74 mOhm @ 19.4A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 100A TO220
|
封裝: TO-220-3 |
庫存19,974 |
|
MOSFET (Metal Oxide) | 100V | 100A (Ta) | 10V | 4V @ 1mA | 140nC @ 10V | 8800pF @ 50V | ±20V | - | 255W (Tc) | 3.4 mOhm @ 50A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V TO-3PN
|
封裝: TO-3P-3, SC-65-3 |
庫存16,284 |
|
MOSFET (Metal Oxide) | 900V | 9A (Ta) | 10V | 4V @ 900µA | 46nC @ 10V | 2000pF @ 25V | ±30V | - | 250W (Tc) | 1.3 Ohm @ 4.5A, 10V | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 13A TO220SIS
|
封裝: TO-220-3 Full Pack |
庫存24,654 |
|
MOSFET (Metal Oxide) | 600V | 13A (Ta) | 10V | 4V @ 1mA | 40nC @ 10V | 2300pF @ 25V | ±30V | - | 50W (Tc) | 430 mOhm @ 6.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 6A TO220SIS
|
封裝: TO-220-3 Full Pack |
庫存22,194 |
|
MOSFET (Metal Oxide) | 600V | 6A (Ta) | 10V | 4V @ 1mA | 16nC @ 10V | 800pF @ 25V | ±30V | - | 40W (Tc) | 1.25 Ohm @ 3A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 60A 8-SOP
|
封裝: 8-PowerVDFN |
庫存81,558 |
|
MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 2.3V @ 1mA | 74nC @ 10V | 6900pF @ 15V | ±20V | - | 1.6W (Ta), 78W (Tc) | 0.9 mOhm @ 30A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 7A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存23,724 |
|
MOSFET (Metal Oxide) | 600V | 7A (Ta) | 10V | 4.5V @ 350µA | 16nC @ 10V | 490pF @ 300V | ±30V | Super Junction | 60W (Tc) | 670 mOhm @ 3.5A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 150V 18A 8-SOP
|
封裝: 8-PowerVDFN |
庫存37,272 |
|
MOSFET (Metal Oxide) | 150V | 18A (Ta) | 10V | 4V @ 300µA | 10.6nC @ 10V | 1100pF @ 75V | ±20V | - | 1.6W (Ta), 57W (Tc) | 33 mOhm @ 9A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 60V 22A 8-SOP ADV
|
封裝: 8-PowerVDFN |
庫存48,078 |
|
MOSFET (Metal Oxide) | 60V | 22A (Ta) | 10V | 4V @ 300µA | 31nC @ 10V | 2320pF @ 30V | ±20V | - | 1.6W (Ta), 45W (Tc) | 7.5 mOhm @ 11A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 9.4A 8TSON
|
封裝: 8-PowerVDFN |
庫存22,812 |
|
MOSFET (Metal Oxide) | 100V | 9.4A (Tc) | 10V | 4V @ 100µA | 11nC @ 10V | 880pF @ 50V | ±20V | - | 700mW (Ta), 27W (Tc) | 33 mOhm @ 4.7A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 17A 8TSON
|
封裝: 8-PowerVDFN |
庫存6,224 |
|
MOSFET (Metal Oxide) | 60V | 17A (Tc) | 4.5V, 10V | 2.5V @ 200µA | 23nC @ 10V | 2000pF @ 30V | ±20V | - | 700mW (Ta), 30W (Tc) | 11.4 mOhm @ 8.5A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 17A 8SOP
|
封裝: 8-PowerVDFN |
庫存26,466 |
|
MOSFET (Metal Oxide) | 60V | 17A (Tc) | 4.5V, 10V | 2.5V @ 200µA | 23nC @ 10V | 2000pF @ 30V | ±20V | - | 1.6W (Ta), 34W (Tc) | 11.4 mOhm @ 8.5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET NCH 30V 15A UDFNB
|
封裝: 6-WDFN Exposed Pad |
庫存93,756 |
|
MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 2.1V @ 100µA | 7.5nC @ 4.5V | 1130pF @ 15V | ±20V | - | 1.25W (Ta) | 8.9 mOhm @ 4A, 10V | 150°C (TA) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 38V 2A
|
封裝: SOT-23-3 Flat Leads |
庫存74,166 |
|
MOSFET (Metal Oxide) | 38V | 2A (Ta) | 4V, 10V | 1.7V @ 1mA | 3nC @ 10V | 120pF @ 10V | ±20V | - | 1W (Ta) | 150 mOhm @ 2A, 10V | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 2.3A ES6
|
封裝: SOT-563, SOT-666 |
庫存115,236 |
|
MOSFET (Metal Oxide) | 30V | 2.3A (Ta) | 1.8V, 4V | 1V @ 1mA | - | 270pF @ 10V | ±12V | - | 500mW (Ta) | 85 mOhm @ 1.5A, 4V | 150°C (TJ) | Surface Mount | ES6 (1.6x1.6) | SOT-563, SOT-666 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4.4A UFM
|
封裝: 3-SMD, Flat Leads |
庫存108,000 |
|
MOSFET (Metal Oxide) | 20V | 4.4A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 24.8nC @ 4.5V | 1800pF @ 10V | ±8V | - | 500mW (Ta) | 25.8 mOhm @ 4A, 4.5V | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |