圖片 |
零件編號 |
製造商 |
描述 |
封裝 |
庫存 |
數量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage |
MOSFET P CH 20V 6A 2-2AA1A
|
封裝: 6-WDFN Exposed Pad |
庫存4,048 |
|
MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 12.8nC @ 10V | 840pF @ 10V | ±8V | - | 1W (Ta) | 32.4 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 3A SOT23F
|
封裝: SOT-23-3 Flat Leads |
庫存4,496 |
|
MOSFET (Metal Oxide) | 30V | 3A (Ta) | 4.5V, 10V | 2.5V @ 100µA | 1.7nC @ 4.5V | 126pF @ 15V | ±20V | - | 1W (Ta) | 95 mOhm @ 2A, 10V | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
||
Toshiba Semiconductor and Storage |
PB-F SMALL LOW ON RESISTANCE MOS
|
封裝: 6-WDFN Exposed Pad |
庫存3,936 |
|
MOSFET (Metal Oxide) | 40V | 12A (Ta) | 4.5V, 10V | 2.4V @ 100µA | 7.5nC @ 4.5V | 1110pF @ 20V | ±20V | - | 2.5W (Ta) | 11.6 mOhm @ 4A, 10V | 150°C | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4A ES6
|
封裝: SOT-563, SOT-666 |
庫存3,968 |
|
MOSFET (Metal Oxide) | 20V | 4A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 14.1nC @ 4.5V | 970pF @ 10V | ±8V | - | 500mW (Ta) | 40.7 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | ES6 | SOT-563, SOT-666 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 3.5A TSM
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存4,496 |
|
MOSFET (Metal Oxide) | 20V | 3.5A (Ta) | 1.8V, 4V | - | 4.8nC @ 4V | 320pF @ 10V | ±12V | - | 700mW (Ta) | 56 mOhm @ 2A, 4V | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 25A 8TSON
|
封裝: 8-VDFN Exposed Pad |
庫存24,354 |
|
MOSFET (Metal Oxide) | 30V | 25A (Ta) | 4.5V, 10V | 2.5V @ 1A | 30nC @ 10V | 1600pF @ 10V | ±25V | - | 700mW (Ta), 30W (Tc) | 6.8 mOhm @ 12.5A, 10V | 150°C (TJ) | Surface Mount | 8-TSON | 8-VDFN Exposed Pad |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 3.2A ES6
|
封裝: SOT-563, SOT-666 |
庫存2,720 |
|
MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 10.8nC @ 4.5V | 510pF @ 10V | ±10V | - | 500mW (Ta) | 47 mOhm @ 2A, 4.5V | 150°C (TJ) | Surface Mount | ES6 (1.6x1.6) | SOT-563, SOT-666 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 0.1A CST3
|
封裝: SC-101, SOT-883 |
庫存4,896 |
|
MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 1.1V @ 100µA | - | 11pF @ 3V | ±10V | - | 100mW (Ta) | 8 Ohm @ 10mA, 4V | 150°C (TJ) | Surface Mount | CST3 | SC-101, SOT-883 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 5A PW-MOLD
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存16,020 |
|
MOSFET (Metal Oxide) | 60V | 5A (Ta) | 4V, 10V | 2V @ 1mA | 12nC @ 10V | 370pF @ 10V | ±20V | - | 20W (Tc) | 160 mOhm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | PW-MOLD | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 1.8A ES6
|
封裝: SOT-563, SOT-666 |
庫存3,200 |
|
MOSFET (Metal Oxide) | 40V | 1.8A (Ta) | 1.8V, 8V | 1.2V @ 1mA | 1.1nC @ 4.2V | 130pF @ 10V | ±12V | - | 500mW (Ta) | 195 mOhm @ 1A, 8V | 150°C (TJ) | Surface Mount | ES6 | SOT-563, SOT-666 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 0.1A CST3
|
封裝: SC-101, SOT-883 |
庫存2,144 |
|
MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | - | - | 9.1pF @ 3V | ±20V | - | 100mW (Ta) | 12 Ohm @ 10mA, 4V | 150°C (TJ) | Surface Mount | CST3 | SC-101, SOT-883 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 100MA USM
|
封裝: SC-70, SOT-323 |
庫存5,904 |
|
MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 2.5V | - | - | 8.5pF @ 3V | 10V | - | 100mW (Ta) | 12 Ohm @ 10mA, 2.5V | 150°C (TJ) | Surface Mount | SC-70 | SC-70, SOT-323 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 0.2A S-MINI
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存21,612 |
|
MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 10V | - | - | 85pF @ 10V | ±20V | - | 200mW (Ta) | 2 Ohm @ 50mA, 10V | 150°C (TJ) | Surface Mount | SC-59 | TO-236-3, SC-59, SOT-23-3 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 0.1A USM
|
封裝: SC-70, SOT-323 |
庫存6,080 |
|
MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 1.7V @ 100µA | - | 9.1pF @ 3V | ±20V | - | 150mW (Ta) | 12 Ohm @ 10mA, 4V | -55°C ~ 150°C (TJ) | Surface Mount | USM | SC-70, SOT-323 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.4A
|
封裝: SC-101, SOT-883 |
庫存6,176 |
|
MOSFET (Metal Oxide) | 60V | 400mA (Ta) | 4.5V, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | ±20V | - | 500mW (Ta) | 1.5 Ohm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | CST3 | SC-101, SOT-883 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 2A ES6
|
封裝: SOT-563, SOT-666 |
庫存46,512 |
|
MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.8V, 4V | 1V @ 1mA | - | 335pF @ 10V | ±8V | - | 500mW (Ta) | 130 mOhm @ 1A, 4V | 150°C (TJ) | Surface Mount | ES6 (1.6x1.6) | SOT-563, SOT-666 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.17A SMD
|
封裝: SC-70, SOT-323 |
庫存3,952 |
|
MOSFET (Metal Oxide) | 60V | 170mA (Ta) | 4.5V, 10V | 2.1V @ 250µA | 0.35nC @ 4.5V | 17pF @ 10V | ±20V | - | 150mW (Ta) | 3.9 Ohm @ 100mA, 10V | 150°C (TJ) | Surface Mount | USM | SC-70, SOT-323 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 5A S-MOS
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存22,092 |
|
MOSFET (Metal Oxide) | 20V | 5A (Ta) | 1.5V, 4V | - | 14.8nC @ 4V | 1120pF @ 10V | ±10V | - | 700mW (Ta) | 28 mOhm @ 4A, 4V | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 1.4A UFM
|
封裝: 3-SMD, Flat Leads |
庫存29,628 |
|
MOSFET (Metal Oxide) | 30V | 1.4A (Ta) | 4V, 10V | - | - | 137pF @ 15V | ±20V | - | 500mW (Ta) | 240 mOhm @ 650mA, 10V | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 22A 8TSON
|
封裝: 8-VDFN Exposed Pad |
庫存23,844 |
|
MOSFET (Metal Oxide) | 30V | 22A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 27nC @ 10V | 2500pF @ 10V | ±20V | - | 700mW (Ta), 30W (Tc) | 8.3 mOhm @ 11A, 10V | 150°C (TJ) | Surface Mount | 8-TSON | 8-VDFN Exposed Pad |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 2.3A TSM
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存27,306 |
|
MOSFET (Metal Oxide) | 20V | 2.3A (Ta) | 1.8V, 4V | - | 6.1nC @ 4V | 335pF @ 10V | ±8V | - | 700mW (Ta) | 127 mOhm @ 1A, 4V | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 0.1A USV
|
封裝: 5-TSSOP, SC-70-5, SOT-353 |
庫存29,124 |
|
MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | - | - | 7.8pF @ 3V | ±20V | - | 200mW (Ta) | 4 Ohm @ 10mA, 4V | 150°C (TJ) | Surface Mount | USV | 5-TSSOP, SC-70-5, SOT-353 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 100MA ESV
|
封裝: SOT-553 |
庫存33,690 |
|
MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 1.5V @ 100µA | - | 7.8pF @ 3V | ±20V | - | 150mW (Ta) | 4 Ohm @ 10mA, 4V | 150°C (TJ) | Surface Mount | ESV | SOT-553 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.05A USM
|
封裝: SC-70, SOT-323 |
庫存59,976 |
|
MOSFET (Metal Oxide) | 20V | 50mA (Ta) | 2.5V | - | - | 5.5pF @ 3V | 10V | - | 100mW (Ta) | 40 Ohm @ 10mA, 2.5V | 150°C (TJ) | Surface Mount | SC-70 | SC-70, SOT-323 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 50MA S-MINI
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存3,440 |
|
MOSFET (Metal Oxide) | 20V | 50mA (Ta) | 2.5V | 1.5V @ 100µA | - | 5.5pF @ 3V | 10V | - | 200mW (Ta) | 40 Ohm @ 10mA, 2.5V | 150°C (TJ) | Surface Mount | SC-59 | TO-236-3, SC-59, SOT-23-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 50V 0.1A USM
|
封裝: SC-70, SOT-323 |
庫存207,528 |
|
MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 2.5V, 4V | 1.5V @ 1µA | - | 7pF @ 3V | ±7V | - | 150mW (Ta) | 20 Ohm @ 10mA, 4V | 150°C (TJ) | Surface Mount | USM | SC-70, SOT-323 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 35A TO220SIS
|
封裝: TO-220-3 Full Pack, Isolated Tab |
庫存7,896 |
|
MOSFET (Metal Oxide) | 650V | 35A (Ta) | 10V | 4.5V @ 2.1mA | 115nC @ 10V | 4100pF @ 300V | ±30V | - | 50W (Tc) | 95 mOhm @ 17.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 27.6A TO247
|
封裝: TO-247-3 |
庫存6,660 |
|
MOSFET (Metal Oxide) | 650V | 27.6A (Ta) | 10V | 3.5V @ 1.6mA | 75nC @ 10V | 3000pF @ 300V | ±30V | - | 230W (Tc) | 110 mOhm @ 13.8A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 27.6A TO-220SIS
|
封裝: TO-220-3 Full Pack, Isolated Tab |
庫存7,260 |
|
MOSFET (Metal Oxide) | 650V | 27.6A (Ta) | 10V | 3.5V @ 1.6mA | 75nC @ 10V | 3000pF @ 300V | ±30V | - | 45W (Tc) | 110 mOhm @ 13.8A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 25A TO-220SIS
|
封裝: TO-220-3 Full Pack, Isolated Tab |
庫存6,672 |
|
MOSFET (Metal Oxide) | 600V | 25A (Ta) | 10V | 4.5V @ 1.2mA | 60nC @ 10V | 2400pF @ 300V | ±30V | - | 45W (Tc) | 140 mOhm @ 7.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |