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Toshiba Semiconductor and Storage 產品

記錄 4,549
頁  5/152
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TK50E08K3,S1X(S
Toshiba Semiconductor and Storage

MOSFET N-CH 75V 50A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 50A
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 25A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存5,408
TK10A55D(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 550V 10A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 550V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 720 mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
封裝: TO-220-3 Full Pack
庫存2,736
hot SSM3K7002BF,LF
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 0.2A S-MINI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-59
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存166,200
SSM6J511NU,LF
Toshiba Semiconductor and Storage

MOSFET P-CH 12V 14A UDFN6B

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 6V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 4A, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFNB (2x2)
  • Package / Case: 6-WDFN Exposed Pad
封裝: 6-WDFN Exposed Pad
庫存3,056
TK100A10N1,S4X
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 100A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 50A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
封裝: TO-220-3 Full Pack, Isolated Tab
庫存6,216
TK13A60D(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 13A TO220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 430 mOhm @ 6.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
封裝: TO-220-3 Full Pack
庫存24,654
SSM6N37FU,LF
Toshiba Semiconductor and Storage

MOSFET ARRAY 2N-CH 20V 250MA US6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
封裝: 6-TSSOP, SC-88, SOT-363
庫存25,446
2SA1020A,NSEIKIF(J
Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封裝: TO-226-3, TO-92-3 Long Body
庫存5,472
2SA1162-O,LF
Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A S-MINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 150mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
封裝: TO-236-3, SC-59, SOT-23-3
庫存26,916
2SC4738-BL(TE85L,F
Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A SSM

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
封裝: SC-75, SOT-416
庫存25,926
RN1109(T5L,F,T)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W SSM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
封裝: SC-75, SOT-416
庫存7,280
RN2109ACT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W CST3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
封裝: SC-101, SOT-883
庫存5,216
RN1905(T5L,F,T)
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
封裝: 6-TSSOP, SC-88, SOT-363
庫存7,584
RN4906,LF
Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
封裝: 6-TSSOP, SC-88, SOT-363
庫存3,312
CMF01(TE12L,Q,M)
Toshiba Semiconductor and Storage

DIODE GEN PURP 600V 2A MFLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: SOD-128
庫存2,256
CMH04(TE12L,Q,M)
Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 1A MFLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: SOD-128
庫存4,464
hot 1SS319(TE85L,F)
Toshiba Semiconductor and Storage

DIODE SCHOTKY GP 40V 100MA SC61B

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 40V
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SC-61AA
  • Supplier Device Package: SC-61B
封裝: SC-61AA
庫存21,936
hot TC58NVG0S3HBAI4
Toshiba Semiconductor and Storage

IC EEPROM 1GBIT 25NS 63TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-TFBGA (9x11)
封裝: 63-VFBGA
庫存7,168
TC74LVX157FTEL
Toshiba Semiconductor and Storage

IC MULTIPLEXER QUAD 2-CH 16TSSOP

  • Type: Multiplexer
  • Circuit: 4 x 2:1
  • Independent Circuits: 1
  • Current - Output High, Low: 4mA, 4mA
  • Voltage Supply Source: Single Supply
  • Voltage - Supply: 2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 16-TSSOP
封裝: 16-TSSOP (0.173", 4.40mm Width)
庫存4,976
TC74LCX14FK(EL,K)
Toshiba Semiconductor and Storage

IC INVERTER HEX SCHMITT 14VSSOP

  • Logic Type: Inverter
  • Number of Circuits: 6
  • Number of Inputs: 6
  • Features: Schmitt Trigger
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Current - Quiescent (Max): 10µA
  • Current - Output High, Low: 24mA, 24mA
  • Logic Level - Low: 0.3 V ~ 0.6 V
  • Logic Level - High: 1.35 V ~ 2.2 V
  • Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-VSSOP, US14
  • Package / Case: 14-VFSOP (0.118", 3.00mm Width)
封裝: 14-VFSOP (0.118", 3.00mm Width)
庫存23,340
TC74VHC374FTELM
Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 20TSSOP

  • Function: Standard
  • Type: D-Type
  • Output Type: Tri-State, Non-Inverted
  • Number of Elements: 1
  • Number of Bits per Element: 8
  • Clock Frequency: 120MHz
  • Max Propagation Delay @ V, Max CL: 10.1ns @ 5V, 50pF
  • Trigger Type: Positive Edge
  • Current - Output High, Low: 8mA, 8mA
  • Voltage - Supply: 2 V ~ 5.5 V
  • Current - Quiescent (Iq): 4µA
  • Input Capacitance: 4pF
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-TSSOP (0.173", 4.40mm Width)
封裝: 20-TSSOP (0.173", 4.40mm Width)
庫存4,480
TL2WU-DWJ,L
Toshiba Semiconductor and Storage

LED WHITE 65MW CSP 0603

  • Color: White
  • Configuration: -
  • Lens Color: -
  • Lens Transparency: -
  • Millicandela Rating: 220mcd
  • Lens Style/Size: Rectangle with Flat Top, 0.35mm x 0.65mm
  • Voltage - Forward (Vf) (Typ): 2.6V
  • Current - Test: 5mA
  • Viewing Angle: -
  • Mounting Type: Surface Mount
  • Wavelength - Dominant: -
  • Wavelength - Peak: -
  • Features: -
  • Package / Case: 0201 (0603 Metric)
  • Supplier Device Package: 0603
  • Size / Dimension: 0.65mm L x 0.35mm W
  • Height (Max): 0.39mm
封裝: 0201 (0603 Metric)
庫存2,484
DF2B36FU,H3F
Toshiba Semiconductor and Storage

TVS DIODE 28VWM 40VC USC

  • Type: Steering (Rail to Rail)
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 28V
  • Voltage - Breakdown (Min): 32V
  • Voltage - Clamping (Max) @ Ipp: 40V
  • Current - Peak Pulse (10/1000µs): 1A (8/20µs)
  • Power - Peak Pulse: 150W
  • Power Line Protection: No
  • Applications: Automotive
  • Capacitance @ Frequency: 6.5pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: USC
封裝: SC-76, SOD-323
庫存7,236
DF2S7MSL,L3F
Toshiba Semiconductor and Storage

TVS DIODE 5VWM 20VC

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 5V (Max)
  • Voltage - Breakdown (Min): 6V
  • Voltage - Clamping (Max) @ Ipp: 20V
  • Current - Peak Pulse (10/1000µs): 3A (8/20µs)
  • Power - Peak Pulse: 60W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 0.5pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 0201 (0603 Metric)
  • Supplier Device Package: SL2
封裝: 0201 (0603 Metric)
庫存217,794
TLP3440(TP,F
Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 120MA 40V

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 14 Ohm
  • Load Current: 120mA
  • Voltage - Input: 1.27VDC
  • Voltage - Load: 0 ~ 40 V
  • Mounting Type: Surface Mount
  • Termination Style: SMD (SMT) Tab
  • Package / Case: 4-SMD (0.096", 2.45mm)
  • Supplier Device Package: 4-VSON
  • Relay Type: Relay
封裝: 4-SMD (0.096", 2.45mm)
庫存29,136
TLP291(GRL-TP,SE
Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

  • Number of Channels: 1
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 100% @ 5mA
  • Current Transfer Ratio (Max): 200% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 110°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-SOIC (0.179", 4.55mm)
  • Supplier Device Package: 4-SO
封裝: 4-SOIC (0.179", 4.55mm)
庫存5,598
TLP620-4(GB,F)
Toshiba Semiconductor and Storage

OPTOISOLTR 5KV 4CH TRANS 16-DIP

  • Number of Channels: 4
  • Voltage - Isolation: 5000Vrms
  • Current Transfer Ratio (Min): 100% @ 5mA
  • Current Transfer Ratio (Max): 600% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: AC, DC
  • Output Type: Transistor
  • Voltage - Output (Max): 55V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.15V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 400mV
  • Operating Temperature: -55°C ~ 100°C
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-DIP
封裝: 16-DIP (0.300", 7.62mm)
庫存55,014
TLP701(F)
Toshiba Semiconductor and Storage

OPTOISO 5KV GATE DRIVER 6SDIP GW

  • Technology: Optical Coupling
  • Number of Channels: 1
  • Voltage - Isolation: 5000Vrms
  • Common Mode Transient Immunity (Min): 10kV/µs
  • Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
  • Pulse Width Distortion (Max): -
  • Rise / Fall Time (Typ): 50ns, 50ns
  • Current - Output High, Low: 400mA, 400mA
  • Current - Peak Output: 600mA
  • Voltage - Forward (Vf) (Typ): 1.55V
  • Current - DC Forward (If) (Max): 20mA
  • Voltage - Supply: 10 V ~ 30 V
  • Operating Temperature: -40°C ~ 100°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SOIC (0.268", 6.80mm Width)
  • Supplier Device Package: 6-SDIP Gull Wing
  • Approvals: cUL, UL
封裝: 6-SOIC (0.268", 6.80mm Width)
庫存3,492
TLP352(D4,F)
Toshiba Semiconductor and Storage

OPTOISO 3.75KV GATE DRVR 8DIP

  • Technology: Optical Coupling
  • Number of Channels: 1
  • Voltage - Isolation: 3750Vrms
  • Common Mode Transient Immunity (Min): 20kV/µs
  • Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
  • Pulse Width Distortion (Max): 50ns
  • Rise / Fall Time (Typ): 15ns, 8ns
  • Current - Output High, Low: 2A, 2A
  • Current - Peak Output: 2.5A
  • Voltage - Forward (Vf) (Typ): 1.55V
  • Current - DC Forward (If) (Max): 20mA
  • Voltage - Supply: 15 V ~ 30 V
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
  • Approvals: CSA, cUL, UL, VDE
封裝: 8-DIP (0.300", 7.62mm)
庫存5,724
74VHC9164FT
Toshiba Semiconductor and Storage

X34 PB-F 8-BIT SHIFT REGISTER (P

  • Logic Type: Shift Register
  • Output Type: Push-Pull
  • Number of Elements: 1
  • Number of Bits per Element: 8
  • Function: Universal
  • Voltage - Supply: 2V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 16-TSSOPB
封裝: 16-TSSOP (0.173", 4.40mm Width)
庫存24,786