Toshiba Semiconductor and Storage 產品

TPC6009-H(TE85L,FM

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 5.3A VS6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 81 mOhm @ 2.7A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: VS-6 (2.9x2.8)
• Package / Case: SOT-23-6 Thin, TSOT-23-6

封裝: SOT-23-6 Thin, TSOT-23-6

2SK3342(TE16L1,NQ)

Toshiba Semiconductor and Storage

MOSFET N-CH 250V 4.5A PW-MOLD

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 20W (Tc)
• Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PW-MOLD
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

TK9A55DA(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 550V 8.5A TO-220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 550V
• Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 860 mOhm @ 4.3A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

封裝: TO-220-3 Full Pack

TK5A55D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 550V 5A TO-220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 550V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 2.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

封裝: TO-220-3 Full Pack

T2N7002BK,LM

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 0.4A SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 320mW (Ta)
• Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

封裝: TO-236-3, SC-59, SOT-23-3

TPH2R306NH,L1Q

Toshiba Semiconductor and Storage

MOSFET N CH 60V 60A SOP ADV

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
• Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 30A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

封裝: 8-PowerVDFN

TPH8R903NL,LQ

Toshiba Semiconductor and Storage

MOSFET N CH 30V 20A 8SOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2.3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 24W (Tc)
• Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 10A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

封裝: 8-PowerVDFN

2SC2229-Y(TE6,F,M)

Toshiba Semiconductor and Storage

TRANS NPN 50MA 150V TO226-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 150V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Power - Max: 800mW
• Frequency - Transition: 120MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

封裝: TO-226-3, TO-92-3 Long Body

2SA1680,T6ASTIF(J

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
• Power - Max: 900mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

封裝: TO-226-3, TO-92-3 Long Body

2SA1162S-GR,LF(D

Toshiba Semiconductor and Storage

TRANSISTOR PNP 50V 150MA S-MINI

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
• Power - Max: 150mW
• Frequency - Transition: 80MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

封裝: TO-236-3, SC-59, SOT-23-3

TTC5200(Q)

Toshiba Semiconductor and Storage

TRANS NPN 230V 15A TO-3PL

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 15A
• Voltage - Collector Emitter Breakdown (Max): 230V
• Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
• Current - Collector Cutoff (Max): 5µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
• Power - Max: 150W
• Frequency - Transition: 30MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3PL
• Supplier Device Package: TO-3P(L)

封裝: TO-3PL

2SC3324GRTE85LF

Toshiba Semiconductor and Storage

TRANS NPN 120V 0.1A S-MINI

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 120V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
• Power - Max: 150mW
• Frequency - Transition: 100MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236

封裝: TO-236-3, SC-59, SOT-23-3

2SC3325-Y,LF

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.5A S-MINI

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
• Power - Max: 200mW
• Frequency - Transition: 300MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

封裝: TO-236-3, SC-59, SOT-23-3

TBAT54S,LM

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 140MA SOT23

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 140mA
• Voltage - Forward (Vf) (Max) @ If: 580mV @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 1.5ns
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-236-3, SC-59, SOT-23-3

TA58M06S,Q(J

Toshiba Semiconductor and Storage

IC REG LINEAR 500MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 500mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: LSTM

封裝: TO-220-3 Full Pack

TCR2LE10,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 1V 200MA ESV

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 2µA
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SOT-553
• Supplier Device Package: ESV

封裝: SOT-553

TCV7103AF(TE12L,Q)

Toshiba Semiconductor and Storage

IC REG BUCK ADJ 6A SYNC 8SOP-ADV

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 2.7V
• Voltage - Input (Max): 5.6V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): 5.6V
• Current - Output: 6A
• Frequency - Switching: 1MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: 8-SOP Advance (5x5)

封裝: 8-PowerVDFN

TC74VHCU04FTEL

Toshiba Semiconductor and Storage

IC INVERTER HEX 14-TSSOP

• Logic Type: Inverter
• Number of Circuits: 6
• Number of Inputs: 6
• Features: -
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.3V
• Logic Level - High: 1.7V
• Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-TSSOP
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)

封裝: 14-TSSOP (0.173", 4.40mm Width)

TC7SHU04FU,LJ(CT

Toshiba Semiconductor and Storage

IC INVERTER UNBUFFER HS 5SSOP

• Logic Type: Inverter
• Number of Circuits: 1
• Number of Inputs: 1
• Features: -
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.3V
• Logic Level - High: 1.7V
• Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: USV
• Package / Case: 5-TSSOP, SC-70-5, SOT-353

封裝: 5-TSSOP, SC-70-5, SOT-353

TC7SET126F,LJ(CB

Toshiba Semiconductor and Storage

IC BUS BUFFER 3-ST TTL 5-SSOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

封裝: SC-74A, SOT-753

TC4S66F,LF

Toshiba Semiconductor and Storage

IC SWITCH SPST SMV5

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 1
• On-State Resistance (Max): 160 Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): 3 V ~ 18 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): -
• -3db Bandwidth: 30MHz
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): 0.5pF, 5pF
• Current - Leakage (IS(off)) (Max): 100nA
• Crosstalk: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

封裝: SC-74A, SOT-753

TL1L4-WH0,L

Toshiba Semiconductor and Storage

LED LETERAS NEU WHITE 4000K 2SMD

• Color: White, Neutral
• CCT (K): 4000K
• Flux @ 85°C, Current - Test: 145 lm (130 lm ~ 160 lm)
• Flux @ 25°C, Current - Test: -
• Current - Test: 350mA
• Voltage - Forward (Vf) (Typ): 2.8V
• Lumens/Watt @ Current - Test: 148 lm/W
• CRI (Color Rendering Index): 70
• Current - Max: 1.5A
• Viewing Angle: 120°
• Mounting Type: Surface Mount
• Package / Case: 1414 (3535 Metric)
• Supplier Device Package: 3535
• Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
• Height - Seated (Max): 0.085" (2.15mm)

封裝: 1414 (3535 Metric)

LTA150B851F

Toshiba Semiconductor and Storage

LCD 15" 1024X768 XGA LVDS

• Display Type: TFT - Color
• Display Mode: Transmissive
• Touchscreen: -
• Diagonal Screen Size: 15" (381.00mm)
• Viewing Area: 304.13mm W x 228.10mm H
• Backlight: CCFL
• Dot Pixels: 1024 x 768 (XGA)
• Interface: LVDS
• Graphics Color: Red, Green, Blue (RGB)
• Background Color: -

封裝: -

TLP197G(F)

Toshiba Semiconductor and Storage

PHOTORELAY MOSFET 350V 6SOP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 35 Ohm
• Load Current: 120mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 350 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 6-SOP (0.173", 4.40mm)
• Supplier Device Package: 6-SOP (2.54mm)
• Relay Type: Relay

封裝: 6-SOP (0.173", 4.40mm)

6N139(F)

Toshiba Semiconductor and Storage

OPTOISO 2.5KV DARL W/BASE 8DIP

• Number of Channels: 1
• Voltage - Isolation: 2500Vrms
• Current Transfer Ratio (Min): 500% @ 1.6mA
• Current Transfer Ratio (Max): -
• Turn On / Turn Off Time (Typ): 200ns, 1µs
• Rise / Fall Time (Typ): -
• Input Type: DC
• Output Type: Darlington with Base
• Voltage - Output (Max): 18V
• Current - Output / Channel: 60mA
• Voltage - Forward (Vf) (Typ): 1.65V
• Current - DC Forward (If) (Max): 20mA
• Vce Saturation (Max): -
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP

封裝: 8-DIP (0.300", 7.62mm)

TLP352F(D4,F)

Toshiba Semiconductor and Storage

OPTOISO 3.75KV GATE DRVR 8DIP

• Technology: Optical Coupling
• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Common Mode Transient Immunity (Min): 20kV/µs
• Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
• Pulse Width Distortion (Max): 50ns
• Rise / Fall Time (Typ): 15ns, 8ns
• Current - Output High, Low: 2A, 2A
• Current - Peak Output: 2.5A
• Voltage - Forward (Vf) (Typ): 1.55V
• Current - DC Forward (If) (Max): 20mA
• Voltage - Supply: 15 V ~ 30 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP
• Approvals: CSA, cUL, UL, VDE

封裝: 8-DIP (0.300", 7.62mm)

TLP5771(TP,E

Toshiba Semiconductor and Storage

OPTOISO 5KV GATE DRIVER SO6L

• Technology: Optical Coupling
• Number of Channels: 1
• Voltage - Isolation: 5000Vrms
• Common Mode Transient Immunity (Min): 35kV/µs
• Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
• Pulse Width Distortion (Max): 50ns
• Rise / Fall Time (Typ): 15ns, 8ns
• Current - Output High, Low: 1A, 1A
• Current - Peak Output: 1A
• Voltage - Forward (Vf) (Typ): 1.65V
• Current - DC Forward (If) (Max): 8mA
• Voltage - Supply: 10 V ~ 30 V
• Operating Temperature: -40°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 6-SO
• Approvals: CQC, cUR, UR, VDE

封裝: 6-SOIC (0.295", 7.50mm Width)

TCR15AG09,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 0.9V 1.5A 6WCSP

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 0.9V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.216V @ 1.5A
• Current - Output: 1.5A
• Current - Quiescent (Iq): 40µA
• Current - Supply (Max): -
• PSRR: 95dB ~ 60dB (1kHz)
• Control Features: Enable
• Protection Features: Current Limit, Thermal Shutdown, UVLO
• Operating Temperature: -40°C ~ 85°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-XFBGA, WLCSP
• Supplier Device Package: 6-WCSP (1.2x0.80)

封裝: 6-XFBGA, WLCSP

TB9081FG

Toshiba Semiconductor and Storage

3-PHASE BI-CMOS BRUSHLESS MOTOR

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Driver
• Output Configuration: Pre-Driver
• Interface: PWM, SPI
• Technology: Bi-CMOS
• Step Resolution: -
• Applications: Automotive
• Current - Output: -
• Voltage - Supply: 3V ~ 5.5V
• Voltage - Load: 4.5V ~ 28V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

封裝: 64-LQFP

TCR2EE40,LM(CT

Toshiba Semiconductor and Storage

200MA LDO VOUT4.0V DROPOUT180MV

• Output Configuration: -
• Output Type: -
• Number of Regulators: -
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: -
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -