圖片 |
零件編號 |
製造商 |
描述 |
封裝 |
庫存 |
數量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 65A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存7,296 |
|
MOSFET (Metal Oxide) | 30V | 65A (Tc) | 4.5V, 10V | 2.35V @ 25µA | 13nC @ 4.5V | 1030pF @ 15V | ±20V | - | 65W (Tc) | 8.4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 650V 0.8A TO-252
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存5,152 |
|
MOSFET (Metal Oxide) | 650V | 800mA (Tc) | 10V | 3.9V @ 250µA | 5nC @ 10V | 100pF @ 25V | ±20V | - | 11W (Tc) | 6 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 55V 80A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存33,924 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 2V @ 93µA | 80nC @ 10V | 2650pF @ 25V | ±20V | - | 158W (Tc) | 11 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 55V 10A I-PAK
|
封裝: TO-251-3 Short Leads, IPak, TO-251AA |
庫存121,692 |
|
MOSFET (Metal Oxide) | 55V | 10A (Tc) | 4.5V, 10V | 1V @ 250µA | 7.9nC @ 5V | 265pF @ 25V | ±16V | - | 28W (Tc) | 140 mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 20V 49A I-PAK
|
封裝: TO-251-3 Short Leads, IPak, TO-251AA |
庫存10,308 |
|
MOSFET (Metal Oxide) | 20V | 49A (Tc) | 4.5V, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 810pF @ 10V | ±20V | - | 40W (Tc) | 11 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Microsemi Corporation |
MOSFET N-CH 200V TO-205AF
|
封裝: TO-205AF Metal Can |
庫存4,768 |
|
MOSFET (Metal Oxide) | 200V | 3.5A (Tc) | 10V | 4V @ 250µA | 14.3nC @ 10V | - | ±20V | - | 800mW (Tc) | 800 mOhm @ 2.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AF Metal Can |
||
Microsemi Corporation |
MOSFET N-CH TO-267AB
|
封裝: TO-267AB |
庫存3,920 |
|
MOSFET (Metal Oxide) | 400V | 14A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | - | ±20V | - | 4W (Ta), 150W (Tc) | 415 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-267AB | TO-267AB |
||
Vishay Siliconix |
MOSFET P-CH 30V 10A 8-SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存3,568 |
|
MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 3V @ 250µA | - | - | ±25V | - | 1.5W (Ta) | 8.5 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET P-CH 60V 8.4A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存558,192 |
|
MOSFET (Metal Oxide) | 60V | 8.4A (Tc) | 4.5V, 10V | 3V @ 250µA | 19nC @ 10V | 450pF @ 25V | ±20V | - | 2W (Ta), 25W (Tc) | 155 mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
NXP |
MOSFET N-CH 75V 75A TO220AB
|
封裝: TO-220-3 |
庫存7,248 |
|
MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 4V @ 1mA | 113.1nC @ 10V | 4860pF @ 25V | ±20V | - | 230W (Tc) | 9 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
NXP |
MOSFET N-CH 30V 68.9A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存3,712 |
|
MOSFET (Metal Oxide) | 30V | 68.9A (Tc) | 5V, 10V | 2.5V @ 1mA | 9.6nC @ 5V | 920pF @ 25V | ±20V | - | 111W (Tc) | 13 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 16.5A TO-220
|
封裝: TO-220-3 |
庫存24,000 |
|
MOSFET (Metal Oxide) | 80V | 16.5A (Tc) | 5V, 10V | 2V @ 250µA | 11.5nC @ 5V | 520pF @ 25V | ±20V | - | 65W (Tc) | 100 mOhm @ 8.25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 55V 75A TO-220AB
|
封裝: TO-220-3 |
庫存2,944 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 180nC @ 10V | 4780pF @ 25V | ±20V | - | 230W (Tc) | 4.9 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET P-CH 100V 19A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存6,528 |
|
MOSFET (Metal Oxide) | 100V | 19A (Tc) | 10V | 4V @ 250µA | 61nC @ 10V | 1400pF @ 25V | ±20V | - | 3.7W (Ta), 150W (Tc) | 200 mOhm @ 11A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 1000V 14A TO-247
|
封裝: TO-247-3 |
庫存390,000 |
|
MOSFET (Metal Oxide) | 1000V | 14A (Tc) | 10V | 4.5V @ 250µA | 195nC @ 10V | 5650pF @ 25V | ±20V | - | 360W (Tc) | 820 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
||
IXYS |
MOSFET N-CH 600V 30A TO-247AD
|
封裝: TO-247-3 |
庫存2,288 |
|
MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 4.5V @ 4mA | 56nC @ 10V | 2270pF @ 25V | ±30V | - | 500W (Tc) | 155 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
IXYS |
MOSFET N-CH 600V 10A D2-PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存5,328 |
|
MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 5.5V @ 250µA | 32nC @ 10V | 1610pF @ 25V | ±30V | - | 200W (Tc) | 740 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 7A IPAK-3
|
封裝: TO-251-3 Stub Leads, IPak |
庫存5,728 |
|
MOSFET (Metal Oxide) | 600V | 7A (Ta) | 10V | 3.7V @ 350µA | 15nC @ 10V | 490pF @ 300V | ±30V | - | 60W (Tc) | 600 mOhm @ 3.5A, 10V | 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
||
ON Semiconductor |
MOSFET N-CH 30V 27A U8FL
|
封裝: 8-PowerWDFN |
庫存6,640 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
Nexperia USA Inc. |
PMV65XP/SOT23/TO-236AB
|
封裝: - |
庫存6,448 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
STMicroelectronics |
MOSFET N-CH 800V 3A TO220
|
封裝: TO-220-3 |
庫存6,656 |
|
MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 5V @ 100µA | 3.7nC @ 10V | 122pF @ 100V | ±30V | - | 60W (Tc) | 2.6 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Nexperia USA Inc. |
MOSFET N-CH SOT883
|
封裝: SC-101, SOT-883 |
庫存3,504 |
|
MOSFET (Metal Oxide) | 30V | 480mA (Ta) | 1.8V, 4.5V | 950mV @ 250µA | 0.89nC @ 4.5V | 43pF @ 25V | ±8V | - | 350mW (Ta) | 1 Ohm @ 200mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006-3 | SC-101, SOT-883 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 0.2A S-MINI
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存21,612 |
|
MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 10V | - | - | 85pF @ 10V | ±20V | - | 200mW (Ta) | 2 Ohm @ 50mA, 10V | 150°C (TJ) | Surface Mount | SC-59 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 34V 17A TDSON-8
|
封裝: 8-PowerTDFN |
庫存52,020 |
|
MOSFET (Metal Oxide) | 34V | 17A (Ta), 98A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 34nC @ 10V | 2800pF @ 15V | ±20V | - | 2.5W (Ta), 57W (Tc) | 3.8 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 30V 78A TO220AB
|
封裝: TO-220-3 |
庫存67,632 |
|
MOSFET (Metal Oxide) | 30V | 78A (Tc) | 4.5V, 10V | 2.35V @ 50µA | 23nC @ 4.5V | 2139pF @ 15V | ±20V | - | 75W (Tc) | 4.8 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 30V 50A PPAK SO-8
|
封裝: PowerPAK? SO-8 |
庫存3,062,820 |
|
MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 123nC @ 10V | 3950pF @ 15V | ±20V | - | 5.2W (Ta), 69W (Tc) | 2.5 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Diodes Incorporated |
MOSFET N-CH 450V 140MA SOT223
|
封裝: TO-261-4, TO-261AA |
庫存452,700 |
|
MOSFET (Metal Oxide) | 450V | 140mA (Ta) | 10V | 3V @ 1mA | - | 70pF @ 25V | ±20V | - | 2W (Ta) | 50 Ohm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 30V 3.4A SOT23
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存2,825,616 |
|
MOSFET (Metal Oxide) | 30V | 3.4A (Ta) | 2.5V, 4.5V | 1.1V @ 10µA | 2.9nC @ 4.5V | 270pF @ 24V | ±12V | - | 1.3W (Ta) | 63 mOhm @ 3.4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | Micro3?/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 40V 27A 8DFN
|
封裝: 8-PowerSMD, Flat Leads |
庫存203,028 |
|
MOSFET (Metal Oxide) | 40V | 27A (Ta), 85A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 88nC @ 10V | 6550pF @ 20V | ±20V | - | 2.3W (Ta), 83W (Tc) | 1.6 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
||
ON Semiconductor |
MOSFET N-CH 50V 200MA SOT-23
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存7,160,040 |
|
MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 5V | 1.5V @ 1mA | - | 50pF @ 25V | ±20V | - | 225mW (Ta) | 3.5 Ohm @ 200mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |