圖片 |
零件編號 |
製造商 |
描述 |
封裝 |
庫存 |
數量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET P-CH 14V 11A 8-SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存613,704 |
|
MOSFET (Metal Oxide) | 14V | 11A (Ta) | 2.5V, 4.5V | 600mV @ 250µA | 125nC @ 5V | 8075pF @ 10V | ±12V | - | 2.5W (Ta) | 12 mOhm @ 11A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 55V 26A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存419,184 |
|
MOSFET (Metal Oxide) | 55V | 26A (Tc) | 4.5V, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | ±20V | - | 79W (Tc) | 50 mOhm @ 4.7A, 10V | -40°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 30V 12A PPAK SO-8
|
封裝: PowerPAK? SO-8 |
庫存135,300 |
|
MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 3V @ 250µA | 35nC @ 4.5V | - | ±20V | - | 1.9W (Ta) | 6.5 mOhm @ 21A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 300V 2.1A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存7,824 |
|
MOSFET (Metal Oxide) | 300V | 2.1A (Tc) | 10V | 5V @ 250µA | 5nC @ 10V | 130pF @ 25V | ±30V | - | 3.13W (Ta), 40W (Tc) | 3.7 Ohm @ 1.05A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 60V 3A SOT223
|
封裝: TO-261-4, TO-261AA |
庫存3,136 |
|
MOSFET (Metal Oxide) | 60V | 3A (Ta) | 5V | 2V @ 250µA | 15nC @ 5V | 440pF @ 25V | ±15V | - | 1.3W (Ta) | 120 mOhm @ 1.5A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Vishay Siliconix |
MOSFET N-CH 30V 100A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存9,516 |
|
MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4V, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 3500pF @ 25V | ±20V | - | 3.8W (Ta), 130W (Tc) | 7 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 250V 2.2A I-PAK
|
封裝: TO-251-3 Short Leads, IPak, TO-251AA |
庫存24,804 |
|
MOSFET (Metal Oxide) | 250V | 2.2A (Tc) | 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | ±20V | - | 2.5W (Ta), 25W (Tc) | 2 Ohm @ 1.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
||
Vishay Siliconix |
MOSFET N-CH 600V 9.2A TO-262
|
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA |
庫存44,832 |
|
MOSFET (Metal Oxide) | 600V | 9.2A (Tc) | 10V | 4V @ 250µA | 49nC @ 10V | 1400pF @ 25V | ±30V | - | 170W (Tc) | 750 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
STMicroelectronics |
MOSFET N-CH 600V 19A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存12,024 |
|
MOSFET (Metal Oxide) | 600V | 19A (Tc) | 10V | 4V @ 250µA | 60nC @ 10V | 2050pF @ 50V | ±25V | - | 150W (Tc) | 180 mOhm @ 9.5A, 10V | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET IFX OPTIMOS TO247
|
封裝: TO-247-3 |
庫存2,608 |
|
MOSFET (Metal Oxide) | 250V | 96A (Tc) | 10V | 4V @ 270µA | 203nC @ 10V | 9915pF @ 50V | ±20V | - | 313W (Tc) | 12 mOhm @ 58A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 4VSON
|
封裝: 4-PowerTSFN |
庫存7,424 |
|
MOSFET (Metal Oxide) | 650V | 21A (Tc) | 10V | 4V @ 590µA | 45nC @ 10V | 2140pF @ 400V | ±20V | - | 128W (Tc) | 99 mOhm @ 5.9A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
||
Infineon Technologies |
MOSFET N-CH 75V 30A TO252-3
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存2,096 |
|
MOSFET (Metal Oxide) | 75V | 30A (Tc) | 10V | 4V @ 80µA | 57nC @ 10V | 1400pF @ 25V | ±20V | - | 136W (Tc) | 21.5 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 800V 10A TO-247
|
封裝: TO-247-3 |
庫存2,432 |
|
MOSFET (Metal Oxide) | 800V | 10A (Tc) | 10V | 5.5V @ 2.5mA | 40nC @ 10V | 2050pF @ 25V | ±30V | - | 300W (Tc) | 1.1 Ohm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
||
ON Semiconductor |
MOSFET N-CH 40V SO8FL
|
封裝: 8-PowerTDFN |
庫存2,608 |
|
MOSFET (Metal Oxide) | 40V | - | 10V | 3.5V @ 250µA | 86nC @ 10V | 6100pF @ 25V | ±20V | - | 3.9W (Ta), 166W (Tc) | 0.92 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
IXYS |
MOSFET N-CH 800V 3.5A TO-220
|
封裝: TO-220-3 |
庫存7,664 |
|
MOSFET (Metal Oxide) | 800V | 3.6A (Tc) | 10V | 5.5V @ 100µA | 14.2nC @ 10V | 750pF @ 25V | ±30V | - | 100W (Tc) | 3.4 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
ON Semiconductor |
MOSFET N-CH 30V 70A SO-8FL
|
封裝: 8-PowerTDFN, 5 Leads |
庫存4,288 |
|
MOSFET (Metal Oxide) | 30V | 10.2A (Ta) | 4.5V, 10V | 2.2V @ 250µA | 31nC @ 10V | 2516pF @ 15V | ±20V | - | - | 4 mOhm @ 30A, 10V | - | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Diodes Incorporated |
MOSFET N-CH 100V 200MA TO92-3
|
封裝: E-Line-3 |
庫存312,000 |
|
MOSFET (Metal Oxide) | 100V | 200mA (Ta) | 10V | 2.4V @ 1mA | - | 40pF @ 25V | ±20V | - | 625mW (Ta) | 10 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 5A 8SOP
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存6,736 |
|
MOSFET (Metal Oxide) | 40V | 5A (Ta) | 4.5V, 10V | 2V @ 100µA | 20nC @ 10V | 890pF @ 10V | +20V, -25V | - | 1W (Ta) | 52 mOhm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
ON Semiconductor |
MOSFET P-CH 20V 0.86A SOT563
|
封裝: SOT-563, SOT-666 |
庫存12,720 |
|
MOSFET (Metal Oxide) | 20V | 860mA (Ta) | 1.8V, 4.5V | 1V @ 250µA | 5.6nC @ 4.5V | 458pF @ 16V | ±8V | - | 170mW (Ta) | 150 mOhm @ 950mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563-6 | SOT-563, SOT-666 |
||
STMicroelectronics |
MOSFET N-CH 600V 26A TO-247
|
封裝: TO-247-3 |
庫存6,176 |
|
MOSFET (Metal Oxide) | 600V | 26A (Tc) | 10V | 4V @ 250µA | 45.5nC @ 10V | 1781pF @ 100V | ±25V | - | 190W (Tc) | 125 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 28A 8TDSON
|
封裝: 8-PowerTDFN |
庫存16,776 |
|
MOSFET (Metal Oxide) | 30V | 28A (Ta), 100A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 20nC @ 15V | 2600pF @ 15V | ±20V | - | 2.5W (Ta), 69W (Tc) | 2 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Diodes Incorporated |
MOSFET N-CH 100V 1.7A SOT223
|
封裝: TO-261-4, TO-261AA |
庫存152,256 |
|
MOSFET (Metal Oxide) | 100V | 1.7A (Ta) | 6V, 10V | 4V @ 250µA | 5.4nC @ 10V | 274pF @ 50V | ±20V | - | 2W (Ta) | 350 mOhm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
IXYS Integrated Circuits Division |
MOSFET N-CH 800V SOT-23
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存6,624 |
|
MOSFET (Metal Oxide) | 800V | - | 0V | - | - | 20pF @ 25V | ±15V | Depletion Mode | 400mW (Ta) | 380 Ohm @ 20mA, 0V | -55°C ~ 110°C (TA) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 40V 120A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存29,976 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 2.8V @ 1mA | 199nC @ 10V | 11334pF @ 25V | ±16V | - | 263W (Tc) | 2.3 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 1000V 4.3A TO-247AC
|
封裝: TO-247-3 |
庫存6,624 |
|
MOSFET (Metal Oxide) | 1000V | 4.3A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 1600pF @ 25V | ±20V | - | 150W (Tc) | 3.5 Ohm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Rohm Semiconductor |
MOSFET N-CH 600V 76A TO247
|
封裝: TO-247-3 |
庫存5,744 |
|
MOSFET (Metal Oxide) | 600V | 76A (Tc) | 10V | 4V @ 1mA | 260nC @ 10V | 6500pF @ 25V | ±20V | - | 120W (Tc) | 42 mOhm @ 44.4A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 30V 15.2A POWER56
|
封裝: 8-PowerTDFN |
庫存113,184 |
|
MOSFET (Metal Oxide) | 30V | 15.2A (Ta), 28A (Tc) | 4.5V, 10V | 3V @ 250µA | 130nC @ 10V | 5915pF @ 15V | ±25V | - | 2.5W (Ta), 73W (Tc) | 6.8 mOhm @ 15.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N CH 100V 56A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存26,508 |
|
MOSFET (Metal Oxide) | 100V | 56A (Tc) | 10V | 4V @ 100µA | 81nC @ 10V | 3031pF @ 50V | ±20V | - | 143W (Tc) | 13.9 mOhm @ 38A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 3A 8-SO
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存169,668 |
|
MOSFET (Metal Oxide) | 200V | 3A (Ta) | 10V | 4.5V @ 250µA | 43nC @ 10V | 1228pF @ 100V | ±20V | - | 2.5W (Ta) | 130 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 50V 16A TO-252AA
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存307,164 |
|
MOSFET (Metal Oxide) | 50V | 16A (Tc) | 4V, 5V | 2V @ 250mA | 80nC @ 10V | - | ±10V | - | 60W (Tc) | 47 mOhm @ 16A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |