圖片 |
零件編號 |
製造商 |
描述 |
封裝 |
庫存 |
數量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 20V 2.3A SOT23
|
封裝: TO-236-3, SC-59, SOT-23-3 |
庫存7,648 |
|
MOSFET (Metal Oxide) | 20V | 2.3A (Ta) | 1.8V, 2.5V | 750mV @ 11µA | 1.7nC @ 2.5V | 529pF @ 10V | ±8V | - | 500mW (Ta) | 57 mOhm @ 2.3A, 2.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 40V 80A TO263-3
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存5,456 |
|
MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 2V @ 250µA | 213nC @ 10V | 6000pF @ 25V | ±20V | - | 300W (Tc) | 3.1 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 40V 80A TO263-3
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存5,616 |
|
MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4V @ 250µA | 148nC @ 10V | 4400pF @ 25V | ±20V | - | 300W (Tc) | 3.7 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 60V 130A TO-247AC
|
封裝: TO-247-3 |
庫存254,316 |
|
MOSFET (Metal Oxide) | 60V | 130A (Tc) | 10V | 4V @ 250µA | 260nC @ 10V | 6760pF @ 25V | ±20V | - | 250W (Tc) | 5.5 mOhm @ 78A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 13A 8-SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存29,424 |
|
MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 2.25V @ 250µA | 14nC @ 4.5V | 1210pF @ 15V | ±20V | - | 2.5W (Ta) | 10 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 200V 18A TO-220AB
|
封裝: TO-220-3 |
庫存3,392 |
|
MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 4V @ 250µA | 67nC @ 10V | 1160pF @ 25V | ±20V | - | 150W (Tc) | 150 mOhm @ 11A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 3.7A DPAK-3
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存6,016 |
|
MOSFET (Metal Oxide) | 600V | 3.7A (Ta) | 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | ±30V | - | 80W (Tc) | 2 Ohm @ 1.9A, 10V | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET P-CH 20V 3.9A 1206-8
|
封裝: 8-SMD, Flat Lead |
庫存3,896,664 |
|
MOSFET (Metal Oxide) | 20V | 3.9A (Ta) | 2.5V, 4.5V | 1.4V @ 250µA | 22nC @ 4.5V | - | ±12V | - | 1.3W (Ta) | 55 mOhm @ 3.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET? | 8-SMD, Flat Lead |
||
NXP |
MOSFET N-CH 30V 75A TO220AB
|
封裝: TO-220-3 |
庫存6,112 |
|
MOSFET (Metal Oxide) | 30V | 75A (Tc) | 10V | 4V @ 1mA | 75nC @ 10V | 4951pF @ 25V | ±20V | - | 255W (Tc) | 3.4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 50V 5.8A 8-SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存210,000 |
|
MOSFET (Metal Oxide) | 50V | 5.8A (Ta) | 4.5V, 10V | 3V @ 250µA | 25nC @ 10V | 1025pF @ 25V | ±20V | - | 2.5W (Ta) | 24 mOhm @ 5.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
ON Semiconductor |
MOSFET N-CH 30V 7.6A IPAK
|
封裝: TO-251-3 Stub Leads, IPak |
庫存6,112 |
|
MOSFET (Metal Oxide) | 30V | 7.6A (Ta), 40A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 7.9nC @ 4.5V | 860pF @ 12V | ±20V | - | 1.27W (Ta), 35.3W (Tc) | 13 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 3.9A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存60,252 |
|
MOSFET (Metal Oxide) | 600V | 3.9A (Tc) | 10V | 5V @ 250µA | 16.6nC @ 10V | 540pF @ 25V | ±30V | - | 50W (Tc) | 1.2 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 20A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存3,168 |
|
MOSFET (Metal Oxide) | 60V | 20A (Tc) | 10V | 4V @ 250µA | 15nC @ 10V | 590pF @ 25V | ±25V | - | 3.75W (Ta), 53W (Tc) | 60 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 400V 16A TO-247AC
|
封裝: TO-247-3 |
庫存119,712 |
|
MOSFET (Metal Oxide) | 400V | 16A (Tc) | 10V | 4V @ 250µA | 76nC @ 10V | 2200pF @ 25V | ±30V | - | 190W (Tc) | 300 mOhm @ 9.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Rohm Semiconductor |
MOSFET P-CH 30V 7.5A 8SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存25,680 |
|
MOSFET (Metal Oxide) | 30V | 7.5A (Ta) | 4V, 10V | 2.5V @ 1mA | 30nC @ 5V | 2900pF @ 10V | ±20V | - | 2W (Ta) | 21 mOhm @ 7.5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET N-CH 20V 6.5A 8-SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存2,288 |
|
MOSFET (Metal Oxide) | 20V | 6.5A (Ta) | 2.5V, 4.5V | 1.4V @ 250µA | 50nC @ 4.5V | - | ±12V | - | 1.5W (Ta) | 25 mOhm @ 8.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Microchip Technology |
MOSFET N-CH 400V 0.12A TO92-3
|
封裝: TO-226-3, TO-92-3 (TO-226AA) |
庫存3,808 |
|
MOSFET (Metal Oxide) | 400V | 120mA (Tj) | 0V | - | - | 300pF @ 25V | ±20V | Depletion Mode | 1W (Tc) | 25 Ohm @ 120mA, 0V | -55°C ~ 150°C (TJ) | Through Hole | TO-92 (TO-226) | TO-226-3, TO-92-3 (TO-226AA) |
||
STMicroelectronics |
MOSFET N-CH 600V 11A TO-220
|
封裝: TO-220-3 |
庫存192,996 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 5V @ 250µA | 40nC @ 10V | 900pF @ 25V | ±30V | - | 160W (Tc) | 450 mOhm @ 5.5A, 10V | - | Through Hole | TO-220AB | TO-220-3 |
||
IXYS |
MOSFET N-CH 600V 50A TO247
|
封裝: TO-247-3 |
庫存103,464 |
|
MOSFET (Metal Oxide) | 600V | 50A (Tc) | 10V | 5V @ 4mA | 94nC @ 10V | 6300pF @ 25V | ±30V | - | 1040W (Tc) | 145 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 14A TO-220
|
封裝: TO-220-3 |
庫存104,280 |
|
MOSFET (Metal Oxide) | 60V | 14A (Ta), 80A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 145nC @ 10V | 9160pF @ 15V | ±20V | - | 242W (Tc) | 6 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 200V 5.2A TO-220AB
|
封裝: TO-220-3 |
庫存93,288 |
|
MOSFET (Metal Oxide) | 200V | 5.2A (Tc) | 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | ±20V | - | 50W (Tc) | 800 mOhm @ 3.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 25V 100A LFPAK
|
封裝: SC-100, SOT-669 |
庫存5,568 |
|
MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V | 950mV @ 1mA | 92nC @ 4.5V | 6150pF @ 10V | ±10V | - | 62.5W (Tc) | 3 mOhm @ 25A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 650V 44A TO247
|
封裝: TO-247-3 |
庫存6,972 |
|
MOSFET (Metal Oxide) | 650V | 44A (Tc) | 10V | 4.5V @ 4.4mA | 78nC @ 10V | 3090pF @ 400V | ±30V | Super Junction | 312W (Tc) | 67 mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
||
STMicroelectronics |
MOSFET N-CH 600V 19.5A POWERFLAT
|
封裝: 4-PowerFlat? HV |
庫存9,552 |
|
MOSFET (Metal Oxide) | 600V | 19.5A (Tc) | 10V | 5V @ 250µA | 70nC @ 10V | 2050pF @ 50V | ±25V | - | 3W (Ta), 150W (Tc) | 180 mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | PowerFlat? (8x8) HV | 4-PowerFlat? HV |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 25V 32A 8PQFN
|
封裝: 8-PowerTDFN |
庫存4,144 |
|
MOSFET (Metal Oxide) | 25V | 32A (Ta), 40A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 68nC @ 10V | 4410pF @ 13V | ±20V | - | 3W (Ta), 66W (Tc) | 2 mOhm @ 27A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Dual Cool ? 33 | 8-PowerTDFN |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 39A DFN
|
封裝: 8-PowerSMD, Flat Leads |
庫存115,200 |
|
MOSFET (Metal Oxide) | 30V | 39A (Ta), 85A (Tc) | 4.5V, 10V | 1.9V @ 250µA | 37.5nC @ 10V | 2150pF @ 15V | ±12V | - | 6.2W (Ta), 42W (Tc) | 2.8 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
||
Infineon Technologies |
MOSFET N-CH 40V 75A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存77,184 |
|
MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4V @ 250µA | 240nC @ 10V | 6450pF @ 25V | ±20V | - | 300W (Tc) | 2 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 40A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存144,936 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta), 40A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 26nC @ 10V | 880pF @ 15V | ±20V | - | 40W (Tc) | 15 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 30V 32A 8SOP
|
封裝: 8-PowerVDFN |
庫存28,476 |
|
MOSFET (Metal Oxide) | 30V | 32A (Ta) | 4.5V, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | ±20V | - | 1.6W (Ta), 21W (Tc) | 11 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET N-CH 650V 22.4A TO220
|
封裝: TO-220-3 |
庫存22,596 |
|
MOSFET (Metal Oxide) | 650V | 22.4A (Tc) | 10V | 4.5V @ 900µA | 86nC @ 10V | 2340pF @ 100V | ±20V | - | 195.3W (Tc) | 150 mOhm @ 9.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |